I investigated the microstructure of a wide variety of nano and microcrystalline Si (μc-Si:H) films
produced under different growth conditions using different characterization probes (spectroscopic
ellipsometry, Raman spectroscopy, atomic force microscopy and X-ray diffraction) at different stages of film growth.
In microstructural studies, I applied a novel modeling method for deconvolution of Raman
spectra of the μc-Si:H films and elucidated schematic growth models for the SiF4 based single phase μc-Si:H material.
I carried out studies on the optoelectronic properties of these microstructurally different
films using dark and photo- conductivity as functions of several discerning parameters. The results of these studies led me to expound a novel way of classifying the wide range of materials into three types based on microstructural attributes and correlative optoelectronic properties. My electrical transport
studies have uncovered some new aspects of the carrier conduction routes and mechanisms in the single phase μc-Si:H material. I have proposed the complete effective distributions of density of states (DOS) applicable to this wide microstructural range of μc-Si:H material based on the results of experimental and numerical simulation studies of the phototransport properties of the material.