digital modulation technique ppt in hindi

1. fMftVy ekWMqys”ku rduhd
uke :Hkqis”k >k
• czkap : bysDVzkfuDl ,oa dE;qfuds”ku bUthfu;fjax
• REG. NO. : G-61
• GROUP : GE-5
• dkWyst : SKYLINE institute of engineering and technology, greater
Noida

2. fo’k; lqph
ofMthVy ekWMqys”ku VsfDud ,oa izdkj
oBinary phase shift keying
oQuadrature phase shift keying
oOffset QPSK
oQuadrature amplitude modulation
oField effect transistor ,oa izdkj
oZener diode
oL E D
oGunn diode
oPIN diode
oSCR
oTransistor
2

3. Ikfjp;
fMftVydE;wfuds”ku flLVe
fMftVy dE;wfuds”kuflLVeessa vf/kd vko`fRr ds ,ukykx flXkuydks de vko`fRr ds
fMftVy lwPkukflXkuyls ekMqysV djrs gSa rFkk flLVe esa fMftVy iYldk iz;ksx gksrk
gSA
3
source
Source
encoder
Channel
encoder
Modulater
Destination Source
decoder
Channel
decoder
Demodulater
Communication
channel

4. 4
fMftVy ekMqys”kuds izdkj

5. 1& fMftVy ,EkIyhV~;wMekMqys”ku vFkok ,EkIyhV~;wMflQ~V dhbax(ASK):-
,EkIyhV~;wMflQ~VdhbaxesadSfj;j flXuydsklwpukflXkuyds fMftVyiYlksads vuqlkj vku;kvkQfd;ktkrkgSA
blesa ckbujhfMftV^1*dksiznf”kZrdjusdsfy,dSfj;jflXuydkiz;ksxfd;ktkrkgS tcfd^0*dsfy,dSfj;j flXuydkiz;ksxugha
djrsgSaAblesadSfj;jQzhDosa”khvifjofrZrjgrhgSA
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,EkIyhV~;wMflQ~V dhbaxdkmi;ksx&
1&eYVhpSuyVsyhxzkQflLVeksa esaA
2&Uokbtdh leL;k ds dkj.k bldk iz;ksxde ghdjrs gSaA

6.  2- QzhDosa”kh flQ~Vdhbax(FSK):&
QzhDosa”kh flQ~V dhbax esa nks dSfj;j QhDosa”kh dk iz;ksx fd;k tkrk gSA
blesa lwpuk flXkuy ds fMftVy iYlksa ds dzekuqlkj carrier signal dh frequency dk iz;ksx djrs gSa ,oa
nksuks ckbujh fMftV~l ds fy, nks fofHkUu QzhDosa”kh ds dSfj;j flXuy dk iz;ksx djrs gSa rFkk dSfj;j dk
amplitude vifjofrZr jgrk gSA ;g FM dh ghrjg gksrk gS ijUrq ekMqysfVax flXkuy ckbujh esa gksrk gS A
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7. QzhDosa”kh flQ~V dhbax dk mi;ksx&
• Ykks&LihM fMftVy MsVk dks Hkstus esa bldk iz;ksx fd;k tkrkgSA
QzhDosa”kh flQ~V dhbax dsykHk&
• ,EkIyhV~;wM flQ~V dhbax esa QSfMax bQsDV ls cpus ds fy, vkVksesfVd xsu
daVz~ksydh vko”;drk gksrh gSA
• QzhDosa”kh flQ~V dhbax tujs”ku ,EkIyhV~;wM flQ~V dhbax ls vklkugksrk
gSA
• dSfj;j flXuy ds ,EkIyhV~;wM vifjoZru”khy gksusds dkj.kblesa ikWoj osLV
ugha gksrh ,oa UkWkbt ls eqfDr fey tkrh gSA
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8. 3. Qst flQ~V dhbax(PSK)
Qst flQ~V dhbax ,axy ekMqys”ku dk ,d vU;rjhdk gSftlesa fu;r ,eIyhV~;wM
fMftVy ekMqys”ku gksrkgSA;gQst ekMqys”ku dh ghrjg gksrkgS ijUrq ekMqysfVax flXuy ckbujh QkeZesa
gksrkgS,oa blesa dsoy fuf”Pkr vkmViqV Qst laHko gSaA
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9. fMthVydE;qfuds”ku ds ykHk ,aogkfu
ykHk
bles tks transmission ds dkj.k noise vk tkrkgS oksreceived signal dks damageugh
djrk A
vf/kd ekrzk es fMthVy flxuy dstransmission nkSjkumultiplexing es fd;k tkrk gS A
gkfu
bldk cost vf/kd gksrk gS A
bles aamplitude modulation ls vf/kd bandwidth dh vko”;drk gksrh gS A
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10. Ckkbujh Qst flQ~V dhbax(BPSK):-
Ckkbujh Qst flQ~V dhbax esa ekMqysfVax flXuy ds ykftd daMh”ku ds vuqlkj] binary modulating signal carrier
signal ds phaseesa ifjOkRZku djrk gSA
Ckkbujh Qst flQ~V dhbax ekMqysVj dk vkmViqV osoQkEkZ ,d Mcy
lkbMcSaMlIizsLM dSfj;j flXuy gksrk gS ftlesa vij,oa yksoj lkbMcSaM
QzhDosaa”kh vk/ks fcVjsVls dSfj;j QzhDosa”kh ls fHkUugksrh gSaA
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11. DokMjspj Qst flQ~Vdhbax (QPSK):-
blesa mifLFkrdata bit ftUgsa modulate djukgS ]feydj dibit cukrs gSa
izR;sdflacy 00 ,01 , 10 ;k 11 esa lsdksbZ ,d oSY;w ys ldrkgSAizR;sdflacy varjkyesa ]buiqV flacyds pkj
laHkkfor oSY;wt ds vuqlkj ekMqysVj dSfj;j dks pkj esals fdlh,d laHkkfor QstijflQ~Vdj nsrk gSAideal
case esa]Qst esa 90 va”k dk varjgkSrkgS
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12. Block diagram of QPSK transmitter:-
 fMfcV~l dks fcV fLIyVj dks fn;k tkrk gSA;g
serially buiqV fn;k tkrk gSA
 fcV pSuy IvkSjnwljk fcV pSuy Q dhrjQvxzlj
gksrkgSA fcV I ml dSfj;j dksekMqysV djrkgS tks
fjQjsal vkfLdysVj dslkFk lse Qst esa gksrk gS rFkk
fcVQ fjQjsal vkfLdysVj ds DokMjspj
dEiksusaV]90 va”k vkmVvkWQ Qst] dks
ekMqysV djrk gSA
 pSuy IvkSjQ esa cWV tkus ds ckndh dk;Zfof/k
Ckkbujh Qst flQ~V dhbax ekMqysVj dh gh rjg
gksrh gSA
 vr% Hkstus ds nkSjku DokMjspj Qst flQ~V dhbax
flXuy ds Qst esa +45 va”k ;k – 45 va”k ifjorZu
gksus ds cknHkh ;gfMekMqysV gksus ij fjlhoj ij
lgh lwpuk budksM djkrk gSA
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13. Block diagram of QPSK receiver
buiqV flXuy dks I vkSjQ esa foHkDr
djds izksMDV fMVsDVj vkSj dSfj;j
fjdojh lfdZV dks nsrs gSaA
dSfj;j fjdojh lfdZVewy Hksth x;h dSfj;j
vkfLdysVj flXuy dks iqu% mRiUu djrk
gSA
izksMDV fMekMqysVj I o Q esa
DokMjspj Qst flQ~V dhbax flXuy
fMekMqysV gksrkgS
izksMDV fMekMqysVj dk vkmViqV
eYVhIYksDlj dksfn, tkrs gSa tgkW ;s
lekUrj Io Q MsVkpSuy ls ,dy ckbujh
MsVk LVz~he esa ifjofrZr gks tkrkgSA
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14. OFFSET QPSK• ;g QPSK dk ,d lq/kjk gqvk izdkj gssS A
• tgkW 1 fcV~ rjax tksI vkssSj Q channel ijfLFkr gSS mls vk|k 0-5 fcV~ (bit) izfr le; fd njls
ifjofrZr djrk gSS
• OQPSK & QPSK signal dk spectrum lekugksrk gSA
• Qpsk dk amplitude idealy constant gksrk gS A
• OQPSK Constellation diagram dk phase transition 90 degree rd fyfeVsMgksrk
gS A
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15. Quadrature amplitude modulation (QAM)
• ;g digital modulation dk izdkj gksrk gS A
• ;gkW digital modulation es phase vkSj carrier nksuksmifLFkr gksrk
gS A
• ;g data communication vkSj wireless communication es mi;ksx
gksrk gS A
• Constellation digram position vkSj status iznZf”kr djrk gS
15

16. Bit rate Table of different forms of QAM &
PSK:-
16
Modulation Bits per symbol Symbol rate
BPSK 1 1 bit rate
QPSK 2 ½ bit rate
8 PSK 3 1/3 bit rate
16 QAM 4 ¼ bit rate
32 QAM 5 1/5 bit rate

17. Field Effect Transistor(FET)
 ;g ,d ,slh v)pkyd ;qfDr gS ftlesa pkyd pSuy dh pkSMkbZa dks fo|qr {ks= }kjkfu;fU=r fd;k
tk ldrk gS A
 bles rhu VfeZuy gksrs gS bldks oksYVst }kjk fu;f=ar fd;k tk ldrk gSA
 FET esa/kkjk dk pkyu dsoy estkWfjVhdSfj;lZ ds }kjkgksrk gSA
 ;g ;wfuiksyj transistor dgykrk gSA
Types of FET :-
JFET
MOSFET
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18. Junction field effect transistor (JFET)
;g rhu terminal device gksrkgS ,source , Drain vkSj Gate A
;g eq[;r: nks izdkj dsgS
P channel
N channel
N-pSuy tD”kau QhYM bQSDV VkftLVj es N-Vkbi flfydkWu dh N.k gksrh gSA ;gN.k nks VfeZuyks ds e/;
,d izfrjks?k dh rjg C;ogkj djrh gS;s VfeZuy source ,oa draindgykrs gSaA
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19. Metal oxide semiconductor field effect transistor (MOSFET) :-
• bles xsV vkSj pSuy ds e/; flfydkWu MkbZ vkDlkbM dh ,d cgqr iryh ijr iz;qDr dh tkrh gSk tks
xsV ,ao pSuy ds e/; bU”kqys”ku dk dk;Z djrh gSaA
• ;gnks izdkj dk gksrk gS
1. N channel MOSFET
2. P channel MOSFET
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20. Zener diode
• Zener diode ,d p-n tD”ku gksrk gSA
• Zener diode ,dLis”ky izdkj dk diode tks farword fn”kk eas current lapj.k gksus nsrkgS A
• ;grevese direction es Hkh lapj.k gksus nsrk gSij ,d fuf”pr voltage rdftls break down voltage ;k zener
voltagedgrs gSA
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Zener diode symbol

21. Zener diode Current vs. Voltage graph
Applications :-
As voltage regulater
Clipper
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22. Light Emitting Diode(LED)
• ;g ,d forward biased P-N Junction gksrk gS tks energizedgksus ijlight emit
djrk gS A
• Tkc N side junction ds electron vkSj P side junction ds hole recombine gksrs
gS rccharge carrier recombine gksrs gS A
• the type of material used the colour of light (frequencies) is emitted :-
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23. Gunn diode
• Gunn ,dfof”k’V bysDV~~kfud fMokbl gS A gunn diode ,p-n junction ughaj[krk ysfdu nks bysDV~ksMks fd
miLfFkfr ds dkj.k bls diode dgrs gSaA
• xuMk;ksMds ,EifyV~;wM fd vf/kdre~ lhek+_.kkred izfrjks/k fu/kkZfjrdjrk gSA
• xuMk;ksMfi,u tax”kufd vis{kkcYd eVsfj;y Iks fuHkZjdjrkgSA
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24. xuMk;ksMdk iz;ksx%
1- xuMk;ksMeq[;r% 1 fxxkgVZ~Tkls 100 fxxkgV~Zt rd fd ekbdzksoso vko`fr fd
jsfM;ks vko`fr mRiUu djus es iz;ksx fd;k tkrk gSA
2- xuMk;ksM,EifyQk;j ds #ies Hkhiz;ksx fd;k tkrkgSA
3- xuMk;ksMdk iz;ksx vklkugksus ds dkj.k] ;s ekbdzksoso vko`fr mRiUu djusesa iz;ksx
fd;k tkrk gSA
• V-I characterstic of GUNN diode
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25. PIN diode
• PiN diode, PN junction dk digrammatical structure iznZf”kr djrs gS A
• IkjUrq PN junction ds chp intrinsic layer mifLFkr gksrk gS A
Applications:-
• High voltage rectifier
• RF switch
• Photo detector 25

26. SCR:-
• ;g Silicon controlled rectifier gksrkgS A
• ;g forward bias es de izfrjks/k okykfMokbl gS rFkk reverse bias es vf/kd
izfrjks/k okykgS A
• ;g rhu junction dk fMokbl gksrk gSA
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Symbol for SCR
Equivalent circuit of a silicon controlled rectifier
(SCR)

27. SCR characterstic curve :-
;grhu region esdkZ; djrkgS , tks fuEu izdkj gS -
1. Farword conduction region
2. Farword blocking region
3. Reverse condction region
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28. Transistor
• ,sls fdzLVy ls fuekZ.kfd;k tkrk gS tgkW nkstaD”ku gksrs tks forward bias rFkk nwljs
fjolZck;l(reverse bias) fLFkfr esa nksukstaD”ku esa yxHkx leku/kkjkizokfgr gksrh gS]
,slh ;qfDr VzkaftLVj dgykrh gSA
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29. •PNP transistor
• Emitter rFkk collector , P type semiconductor ls rFkk Base N type semiconductor ls
cukgksrkgS A
• - P type semiconductor dk;Z mRltZd }kjkHkststkus okysvkos”k okgdks dks ,df=r djukgksrk gSA
• bl izdkj ds transistor dk mi;ksx negative power supply es fd;ka tkrk gS A
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30. NPN transistor
Emitter rFkk collector,Ntype Lks rFkk Base , P type semiconductor
ls cukgksrk gS A
-N type semiconductor /kkjk izokg ds fy, vkos”k okgdks dk yxkrkj
mRltZu djrk gS rFkk Base- VzkaftLVjds e/; es fLFkr iryh ijr gksrh gSA ;g mRltZd
vkSjlaxzgd ds e/; larqyu cukds j[krk gSA
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31. Application of Transistor
• bldk iz;ksx eq[;r% izo/kZd ds :Ik es fd;k tkrk gS A
• bldk iz;ksx amplifirers vkSjoscillators ds :Ik es fd;k tkrk gS A
• bldk iz;ksx feDlM flaxuyifjiFk (mixed signal circuit) tks dh fMftVy
ifjiFk(digital circuit) vSkj ,ukykx ifjiFk(analog circuit) ds chp baVjQsl djus
ds fy, fd;k tkrk gsSA
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32. /kU;okn
THANK YOU
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