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PHYSICAL VAPOR
DEPOSITION
SPUTTERING TECHNIQUE
ROLL NO : 15251510-002
CONTENTS:
• What is sputtering?
• Why we use sputtering?
• Conditions
• Energy for sputtering
• Energy and Momentum conservation law
• Requirement
• Process
• Sputtering yield
• Applications or Advantages
SPUTTERING
A mechanism in which atoms are ejected from the surface of a target material when
that surface is struck by sufficient energetic particles.
Discovered in 1852 and developed as a thin film deposition technique by
LANGMUIR in 1920.
WHY WE USE SPUTTERING?
• For high melting point materials
• Thickness of thin film is easily controlled
• Formation of uniform thickness by large area target
• Better quality of thin film is achieved
CONDITIONS
• Choice of particular ion
• Suitable cathode voltage
• Correct angle for high sputtering yield
• Consistent substrate voltage and temperature for clean film
• 3-10kev energy for sputtering but can vary with nature of gas
ENERGY AND MOMENTUM LAW
• Key principle of sputtering is energy and momentum must be conserved
REQUIREMENTS
• Vacuum
• Inert gas
• Power supply
• Sputtering gas
SPUTTERING YIELD
o 𝑠𝑝𝑢𝑡𝑡𝑒𝑟𝑖𝑛𝑔 𝑦𝑒𝑖𝑙𝑑 𝑠 =
𝑛𝑜 𝑜𝑓 𝑒𝑚𝑖𝑡𝑡𝑒𝑑 𝑝𝑎𝑟𝑡𝑖𝑐𝑙𝑒𝑠
𝑛𝑜 𝑜𝑓 𝑖𝑛𝑐𝑖𝑑𝑒𝑛𝑡 𝑝𝑎𝑟𝑡𝑖𝑐𝑙𝑒𝑠
o Rate of deposition proportional to the sputter yield.
o It depends on
 Type of target atom
 Binding energy of target atom
 Mass of ion and atoms
 Incident ion energy
 Angle of incidents of ion
APPLICATIONS
• In microelectronics such as cell phone, IPod, watches, batteries.
• Solar panel
• For antireflective coating on cars, jewelry, cutting tools
• In chemical industries

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Physical vapor deposition

  • 2. CONTENTS: • What is sputtering? • Why we use sputtering? • Conditions • Energy for sputtering • Energy and Momentum conservation law • Requirement • Process • Sputtering yield • Applications or Advantages
  • 3. SPUTTERING A mechanism in which atoms are ejected from the surface of a target material when that surface is struck by sufficient energetic particles. Discovered in 1852 and developed as a thin film deposition technique by LANGMUIR in 1920.
  • 4. WHY WE USE SPUTTERING? • For high melting point materials • Thickness of thin film is easily controlled • Formation of uniform thickness by large area target • Better quality of thin film is achieved
  • 5. CONDITIONS • Choice of particular ion • Suitable cathode voltage • Correct angle for high sputtering yield • Consistent substrate voltage and temperature for clean film • 3-10kev energy for sputtering but can vary with nature of gas
  • 6. ENERGY AND MOMENTUM LAW • Key principle of sputtering is energy and momentum must be conserved
  • 7. REQUIREMENTS • Vacuum • Inert gas • Power supply • Sputtering gas
  • 8. SPUTTERING YIELD o 𝑠𝑝𝑢𝑡𝑡𝑒𝑟𝑖𝑛𝑔 𝑦𝑒𝑖𝑙𝑑 𝑠 = 𝑛𝑜 𝑜𝑓 𝑒𝑚𝑖𝑡𝑡𝑒𝑑 𝑝𝑎𝑟𝑡𝑖𝑐𝑙𝑒𝑠 𝑛𝑜 𝑜𝑓 𝑖𝑛𝑐𝑖𝑑𝑒𝑛𝑡 𝑝𝑎𝑟𝑡𝑖𝑐𝑙𝑒𝑠 o Rate of deposition proportional to the sputter yield. o It depends on  Type of target atom  Binding energy of target atom  Mass of ion and atoms  Incident ion energy  Angle of incidents of ion
  • 9. APPLICATIONS • In microelectronics such as cell phone, IPod, watches, batteries. • Solar panel • For antireflective coating on cars, jewelry, cutting tools • In chemical industries