4. 3. Fabrication Process
• Wafer Cleaning
The wafer cleaning steps –
1) DI – De Ionized water dip of silicon wafer
2) RCA-1
Solution composed of 1:1:5 of NH4OH:H2O2: DI water is heated up
to 750 C.
3) DI water dip
4) HF dip
5) DI water dip
6) RCA-2
5. 7) RCA-2
Solution composed of 1:1:5 of HCl : H2O2: DI water is heated up
to 750 C.
8) DI water dip
9) HF dip
10) DI water dip
11) Wafer is dried using Compressed Dry Air (CDA)
6. Oxidation
Procedure followed:
a. The wafers are fed to the furnace in a quartz boat.
b. Temperature is ramped up to 8500 C.
c. Oxygen is supplied to the chamber.
d. Oxygen supply is cut down.
e. Temperature is ramped down.
f. Wafers are unloaded.
7. 3. Patterning - Etching
• The oxidized silicon wafer is spin coated with positive photoresist.
• Spin-coated wafer is de-hydrated (100oC) and then Baked wafer is
undergone through lithography.
• The soluble photoresist exposed in lithography.
• Etched using Dilute Hydrofluoric Acid (DHF) solution to remove the
oxide layer.
8. Metallization
• Here Gold is used as metal and the thickness was 100nm deposited
through Electron Gun Evaporation.
9. Lithography
• It is the last step of MOS cap fabrication.
• LASER writing is used here for patterning on the wafer.
• After metallization, wafer is spin coated with photoresist.
• Dehydration bake is done after spin coating in the end.
13. Objective 1: Linear and Saturated transfer characteristics (both in linear
and log scale). Extract ION, IOFF, VthLin, VthSat, DIBL, SS, Max gin.
• Linear mode: VDS = 100 mV; VGS varied from (0-1) V:
23. Objective 3: Plot the 1- D Drain electric field, drift velocity, and
conduction band edge profile along the channel at VGS = 1 V, and VDS =
1 V.
• Drift Velocity v1: 3.9e+8 cm/s v2: 3.6e+8 cm/s
25. Objective 4: Plot the 1-D quantum mechanical inversion charge density
across and along the channel at VGS — Vth = 0.2 V.
26. Objective 5: Plot the simulated 2-D color map plots of quantum
corrected inversion charge density in the device active region at VGS –
Vth = 0.2 V.
• Classical
28. CONCLUSION :-
• Therefore we have successfully completed Mos Capacitor Fabrication
And Characterisation. We had simulated DGMOS in TCAD and verified
characteristics like I-V, electron densities, electric field etc.