Schottky Diode

1. WELCOME
TO
THE
PRESENTATION

2. Presented By:
Yasmin Begum
ID No.: 171-115-
033
Course title: Basic electronics
engineering
Topic: schottky diode

3. CONTENTS
Introduction
Reason of inventingit
Construction
WorkingPrinciples
IV Characteristic
Parameter
Current Equation
Applications
Advantages & Disadvantages

4. Walter H. Schottky
(1886-1976)
Schottky Diode:
A semiconductor diode formedby the junction of semiconductor with
metal.
 Namedafter the German physicist
Walter H. Schottky .
 Silicon diodes forward voltage 0.7 V.
 Schottky diodes forward voltage
0.15 - 045 V.
INTRODUCTION:
Schottky Diode

5. REASONOF INVENTING IT:
It has no depletionlayer.
Does notstore charge carriers at the
junction.
Reverse recovery time.
Fast switching capability.

6. CONSTRUCTION:
P-type N-type
Metal
P-N Junction
M-S Junction
N-type
Semiconductor Diode
Schottky Diode

7. N-type
V
+
Anode Cathode
metal
Ohmic
contact
semiconductor
-
Schottky Diode Construction

8. Schottky Diode Symbol
Normal Diode & Schottky Diode

9. WORKING PRINCIPLES:
Schottky Diode InUnbiased State
ValanceBand
Fermi Level
Banddiagraminunbiased state
ConductionBand

10. Schottky Diode In Forward Bias
ConductionBand
ValanceBand
Banddiagraminforward
biased state
Fermi Level

11. Schottky Diode In Reverse Bias Banddiagraminreverse
biased state
ConductionBand
ValanceBand
Fermi Level

12. I-V CHARACTERISTIC:
Schottky
Diode P-N Junction
Diode
Schottky
Diode
P-N Junction
Diode
VD(V)
0.45 0.7
I-V Characteristic of schottky Diode
I(mA)
Ohmic
contact
0

13. PARAMETERS:
Forward voltage drop.
Capacitance.
Reverserecoverytime.
Reverseleakagecurrent.
Working temperature.

14. CURRENTEQUATION:
Where,
I is the current flowing through the diode,
I0 is the dark saturation current,
q is the charge on the electron,
V is the voltage applied across the diode,
η is the (exponential) ideality factor,
T is the absolute temperature in Kelvin.
K is the Boltzmann constant

15. APPLICATION:
Rectifier
Digital
Computer
SignalDetector
DCPower
Supplier
As a fast switching device in
digital computers.
In radio frequency (RF)
applications.
In logic circuit.
As general purpose rectifiers.
Used in power supplies.
To detect signals.
To increase the efficiency of
clamping.

16. ADVANTAGE:
Low junction capacitance
Fast reverse recovery time
High current density
Low turn on voltage
High efficiency.
Schottky diodes operate at high
frequencies.
Schottky diode produces less
unwanted noise than P-N junction
diode.
DISADVANTAGE:
Reverse leakage current.
Low reverse voltage rating.

17. THANK
YOU
EVERYONE
ANY QUESTIONS ?