The document is a device modeling report from Bee Technologies Inc. that contains the diode model parameters and simulation results for the SBR8A45SP5 super barrier rectifier manufactured by Diodes. The report includes the diode model parameters, simulation results comparing the forward current characteristics to measurements, and simulation results comparing the junction capacitance characteristic to measurements. The simulations match the measurements well with less than 5% error.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: SUPER BARRIER RECTIFIER (SBD)
PART NUMBER: SBR8A45SP5
MANUFACTURER: DIODES
REMARK: Standard Model

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013
2
DIODE MODEL PARAMETERS
PSpice
model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013
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R1
0.01m
V1
0Vdc
0
U1
DSBR8A45SP5
V_V1
0V 200mV 400mV 600mV
I(R1)
100uA
1.0mA
10mA
100mA
1.0A
10A
100A
Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013
4
Comparison Graph
Circuit Simulation result
Comparison table
IF (A)
VF (mV)
%Error
Measurement Simulation
0.0001 57.500 59.000 2.61
0.001 117.000 116.000 -0.85
0.01 178.000 175.500 -1.40
0.1 242.000 239.400 -1.07
0.2 265.000 262.000 -1.13
0.5 300.000 300.000 0.00
1 335.000 336.640 0.49
2 381.000 385.000 1.05
5 478.000 475.000 -0.63
10 580.000 582.000 0.34

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013
5
0
V1
TD = 0
TF = 500ns
PW = 100us
PER = 500us
V1 = 0
TR = 1us
V2 = 45
V2
0Vdc
U1
DSBR8A45SP5
V(N16610)
100mV 1.0V 10V 50V
I(V2)/(45V/1us)
100p
1.0n
10n
Junction Capacitance Characteristic
Circuit Simulation result
Evaluation circuit

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013
6
Comparison Graph
Circuit Simulation result
Comparison table
VR(V)
CT (pF)
%Error
Measurement Simulation
0.1 3500.000 3557.000 1.63
0.2 2150.000 2190.000 1.86
0.5 1150.000 1179.000 2.52
1 720.000 745.000 3.47
2 460.000 464.300 0.93
5 265.000 252.000 -4.91