SPICE MODEL of IDH02G65C5 (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: SiC Schottky Barrier Diode
PART NUMBER: IDH02G65C5
MANUFACTURER: Infineon
REMARK: Professional Model

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
2
Circuit Configuration
DIODE MODEL PARAMETERS
PSpice
model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
3
U1
IDH02G65C5
R1
0.01m
V1
0Vdc
0
R2
100MEG
V _ V 1
0V 0.5V 1.0V 1.5V 2.0V 2.5V
I(R1)
0A
1.0A
2.0A
3.0A
4.0A
Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
4
Comparison Graph Circuit Simulation result
Comparison table
IF (A) VF (V) %Error Measurement Simulation 0.1 0.930 0.931 0.11 0.2 0.980 0.980 0.00 0.5 1.090 1.089 -0.09 1 1.240 1.238 -0.16 2 1.500 1.500 0.00 4 2.000 2.000 0.00

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
5
V ( R )
100mV 1.0V 10V 100V 1.0KV
I(V2)/(650V/100u)
0
10p
20p
30p
40p
50p
60p
70p
80p
90p
0
R
V1
TD = 0
TF = 100ns
PW = 100us
PER = 10m
V1 = 0
TR = 100us
V2 = 650
V2
0Vdc
R2
100MEG
U1
IDH02G65C5
Junction Capacitance Characteristic
Circuit Simulation result
Evaluation circuit

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
6
Comparison Graph Circuit Simulation result
Comparison table
VR(V) C (pF) %Error Measurement Simulation 0.1 84.000 83.680 -0.38 0.2 82.000 81.650 -0.43 0.5 77.000 76.440 -0.73 1 70.000 69.500 -0.71 2 59.000 59.460 0.78 5 45.000 43.710 -2.87 10 34.000 32.650 -3.97 20 25.000 23.940 -4.24 50 17.000 16.330 -3.94 100 12.300 12.900 4.88 200 10.400 10.840 4.23 500 9.200 9.620 4.57

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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V _ V 1
100V 200V 300V 400V 500V 600V
I(R1)
1.0nA
10nA
100nA
1.0uA
10uA
U1
IDH02G65C5
R4
10G
V1
0Vdc
R1
100m
0
Reverse Characteristic
Circuit Simulation result
Evaluation circuit

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
8
Comparison Graph Circuit Simulation result
Comparison table
IR (A) VR (V) %Error Measurement Simulation 1.00E-09 480.000 461.620 -3.83 1.00E-08 563.000 567.300 0.76 1.00E-07 650.000 654.260 0.66