F4-75R06W1E3(SPICE MODEL)

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS:Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: F4-75R06W1E3
MANUFACTURER:Infineon

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
2
V_VGE
6.0V 7.0V 8.0V 9.0V 10.0V 11.0V 12.0V
I(C)
0A
15A
30A
45A
60A
75A
90A
105A
120A
135A
150A
VGE
0
VCE
20V
C
U1
F4-75R06W1E3
Transfer Characteristic
Circuit Simulation result
Evaluation circuit

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
3
Transfer Characteristic Comparison Graph
Simulation result
Comparison table
Test condition: VCE=20 (V)
IC (A)
VGE (V)
%Error
Measurement Simulation
10.0 7.900 7.818 -1.04
20.0 8.250 8.200 -0.61
50.0 8.950 8.972 0.25
100.0 9.820 9.863 0.44
150.0 10.580 10.562 -0.17

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
4
I_IC
0A 15A 30A 45A 60A 75A 90A 105A 120A 135A
V(C,E)
0V
0.4V
0.8V
1.2V
1.6V
2.0V
2.4V
VGE
15V
Rwire
1U
IC
G
0
H1
IGBT_p
E
C
G
C
E
Saturation Characteristic
Circuit Simulation result
Evaluation circuit

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
5
Saturation Characteristic Comparison Graph
Simulation result
Comparison table
Test condition: VGE=15 (V)
IC (A)
VCE (V)
%Error
Measurement Simulation
10 0.884 0.883 -0.11
20 1.000 0.999 -0.10
50 1.272 1.272 0.00
100 1.620 1.617 -0.19
150 1.964 1.960 -0.20

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
6
V_VCE
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V
I(C)
0A
15A
30A
45A
60A
75A
90A
105A
120A
135A
150A
VGE
0
VCE
C
U1
F4-75R06W1E3
OutputCharacteristic
Circuit Simulation result
Evaluation circuit
VGE=9V
19V, 17V, 15V
11V
13V

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
7
Time*1m
0s 0.1us 0.3us 0.5us 0.7us 0.9us
1 V(G) 2 V(C,E)
-20s
-16s
-12s
-8s
-4s
0s
4s
8s
12s
16s
20s
1
-40V
0V
40V
80V
120V
160V
200V
240V
280V
320V
360V
2
>>
Rwr1
1u
C
E
0
D2
DMod
PARAMETERS:
VCES = 600
IC_DC = 75
VG0
-15V
U1
F4-75R06W1E3
-
+
W1
ION = 0
IOFF = 100uA
W
ROFF = 1e9
RON = 1.0u
IGTD = 0
TF = 10n
PW = 10m
PER = 1
I1 = 0
I2 = 1m
TR = 10n
G
IC
{IC_DC}
VC
{(1/2)*VCES}
Gate ChargeCharacteristic
Circuit Simulation result
Evaluation circuit
Test condition: VCC=300(V), IC=75(A), VGE = -15V ... +15V
Parameter Unit Measurement Simulation %Error
Qg c 0.8 0.799 -0.13

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
8
Time
0s 0.4us 0.8us 1.2us 1.6us 2.0us 2.4us 2.8us 3.2us 3.6us 4.0us
V(C)
0V
100V
200V
300V
SEL>>
V(G,E)
-20V
-10V
0V
10V
20V
0
VCC
300
Rg
5.1
V1TD = 0.5u
TF = 10n
PW = 9.99u
PER = 100u
V1 = -15
TR = 10n
V2 = 15
L1
1500uH
IC = 75
1
2
FWD
C
C
A
U1
F4-75R06W1E3
G
U2
F4-75R06W1E3
Rise Time Characteristic
Circuit Simulation result
Evaluation circuit
Test condition: VCE=300V, IC=75A, RG=5.1, VGE=+/-15V
Parameter Unit Measurement Simulation %Error
tr s 0.017 0.0169 -0.59

9. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
9
Time
10.5us 10.6us 10.7us 10.8us 10.9us 11.0us 11.1us 11.2us 11.3us 11.4us
I(C)
0A
25A
50A
75A
SEL>>
V(G)
-20V
-10V
0V
10V
20V
0
VCC
300
Rg
5.1
V1TD = 0.5u
TF = 10n
PW = 9.99u
PER = 100u
V1 = -15
TR = 10n
V2 = 15
L1
1500uH
IC = 73
1
2
FWD
C
C
A
U1
F4-75R06W1E3
G
U2
F4-75R06W1E3
Fall Time Characteristic
Circuit Simulation result
Evaluation circuit
Test condition: VCC=2,600V, IC=600A, L=130nH, RG=3.3, VGE=+/-15V
Parameter Unit Measurement Simulation %Error
tf s 0.07 0.068 -2.86

10. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
10
V_VF
0V 0.25V 0.50V 0.75V 1.00V 1.25V 1.50V 1.75V
-I(VF)
0A
15A
30A
45A
60A
75A
90A
105A
120A
135A
150A
VF
0
F
U1
F4-75R06W1E3
FWD Forward CurrentCharacteristic
Circuit Simulation result
Evaluation circuit

11. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
11
FWD Forward CurrentCharacteristic Comparison Graph
Simulation result
Comparison table
IF (A)
VF (V)
%Error
Measurement Simulation
10 1.000 1.000 0.00
20 1.138 1.137 -0.09
50 1.390 1.391 0.07
100 1.685 1.684 -0.06
150 1.929 1.930 0.05

12. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
12
Time
520ns 560ns 600ns 640ns 680ns 720ns 760ns 800ns 840ns 880ns
I(FWD)
-100A
-75A
-50A
-25A
0A
25A
50A
75A
100A
L2
72nH
1 2
VCC
300
L1
500uH
IC = 75
1
2
0
Rg
5.1
V1TD = 0.5u
TF = 10n
PW = 9.99u
PER = 100u
V1 = -15
TR = 10n
V2 = 15
FWD
C
C
A
U1
F4-75R06W1E3
G
U2
F4-75R06W1E3
Reverse RecoveryCharacteristic
Circuit Simulation result
Evaluation circuit
Test condition: VCC=2,600V, IC=600A, L=130nH, RG=3.3, VGE=+/-15V
Parameter Unit Measurement Simulation %Error
trr* s 0.078 0.0776 -0.51
IRM A 95 96.694 1.78
* trr is calculated from equation: Qr=(1/2)IRMtrr ; Qr and IRM are provided by the datasheet
IF=0A_
_
IR=10% of IRM = -9.5A
tRR