On the Choice of Compressor Pressure in the Process of Pneumatic Transport to...BRNSS Publication Hub
In this paper, we consider a possibility to choose value of pressure of devices for pneumatic transport to increase energy saving. We also introduce an analytical approach for the prognosis of transport of free-flowing materials to estimate velocity of the transport and choosing of the required value of pressure.
The response of a rectangular micro-plate to me-chanical shocks considering m...Kaveh Rashvand
In this presentation, the modified couple stress theory is used to investigate the effects of mechani-cal shocks due to package motions on the dynamic stability of a fully clamped rectangular micro-plate. Numerical results reveal that the intrinsic size dependence of materials on thick-ness affects the stability region, and the dynamic response of the micro-plate. The results ob-tained from the modified couple stress theory show that the classical theory overestimates the deflection of the micro-plate in smaller thicknesses, which may lead to early instability. In contrast, the results of the modified couple stress theory are similar to those of the classical elasticity theory in greater thicknesses. Therefore, the effect of intrinsic length-scale can be neglected in this case. In addition, studying a half-sine mechanical shock shows that changing the pulse duration can cause the dynamic shock response to become similar to the quasi-static one while changing the amplitude of the acceleration pulse can change the stable voltage values of the micro-plate. These parameters should be considered together with the pull-in voltage to prevent the failure of MEMS devices under mechanical shocks.
On the Choice of Compressor Pressure in the Process of Pneumatic Transport to...BRNSS Publication Hub
In this paper, we consider a possibility to choose value of pressure of devices for pneumatic transport to increase energy saving. We also introduce an analytical approach for the prognosis of transport of free-flowing materials to estimate velocity of the transport and choosing of the required value of pressure.
The response of a rectangular micro-plate to me-chanical shocks considering m...Kaveh Rashvand
In this presentation, the modified couple stress theory is used to investigate the effects of mechani-cal shocks due to package motions on the dynamic stability of a fully clamped rectangular micro-plate. Numerical results reveal that the intrinsic size dependence of materials on thick-ness affects the stability region, and the dynamic response of the micro-plate. The results ob-tained from the modified couple stress theory show that the classical theory overestimates the deflection of the micro-plate in smaller thicknesses, which may lead to early instability. In contrast, the results of the modified couple stress theory are similar to those of the classical elasticity theory in greater thicknesses. Therefore, the effect of intrinsic length-scale can be neglected in this case. In addition, studying a half-sine mechanical shock shows that changing the pulse duration can cause the dynamic shock response to become similar to the quasi-static one while changing the amplitude of the acceleration pulse can change the stable voltage values of the micro-plate. These parameters should be considered together with the pull-in voltage to prevent the failure of MEMS devices under mechanical shocks.
OPTIMIZATION OF DOPANT DIFFUSION AND ION IMPLANTATION TO INCREASE INTEGRATION...ijrap
In this work we introduce an approach to decrease dimensions of a field-effect heterotransistors. The approach
based on manufacturing field-effect transistors in heterostructures and optimization of technological
processes. At the same time we consider possibility to simplify their constructions.
OPTIMIZATION OF DOPANT DIFFUSION AND ION IMPLANTATION TO INCREASE INTEGRATION...ijrap
In this work we introduce an approach to decrease dimensions of a field-effect heterotransistors. The approach based on manufacturing field-effect transistors in heterostructures and optimization of technological processes. At the same time we consider possibility to simplify their constructions.
On Approach to Increase Integration rate of Elements of a Circuit Driver with...BRNSS Publication Hub
In this paper, we introduce an approach to increase the integration rate of elements of a driver with 2-tap de-emphasis and impendence matching. Framework the approach, we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
An Approach to Analyze Non-linear Dynamics of Mass Transport during Manufactu...BRNSS Publication Hub
In this paper, we introduce an approach to increase integration rate of elements of a hybrid comparator with the first dynamic amplifying stage and the second quasi-dynamic latching stage. Framework the approach, we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized
On Approach to Increase Integration Rate of Elements of a Switched-capacitor ...BRNSS Publication Hub
In this paper, we introduce an approach to increase integration rate of elements of a switched-
capacitor step-down DC–DC converter. Framework the approach, we consider a heterostructure with
special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion
implantation. Annealing of dopant and/or radiation defects should be optimized.
On Optimization of Manufacturing of Field-Effect Heterotransistors Frame-work...antjjournal
We consider an approach for increasing density of field-effect heterotransistors in a single-stage multi-path operational amplifier. At the same time one can obtain decreasing of dimensions of the above transistors. Dimensions of the elements could be decreased by manufacturing of these elements in a heterostructure with specific structure. The manufacturing is doing by doping of required areas of the heterostructure by diffusion or ion implantation with future optimization of annealing of dopant and/or radiation defects.
MODELING OF MANUFACTURING OF A FIELDEFFECT TRANSISTOR TO DETERMINE CONDITIONS...antjjournal
In this paper we introduce an approach to model technological process of manufacture of a field-effect
heterotransistor. The modeling gives us possibility to optimize the technological process to decrease length
of channel by using mechanical stress. As accompanying results of the decreasing one can find decreasing
of thickness of the heterotransistors and increasing of their density, which were comprised in integrated
circuits.
ON APPROACH TO INCREASE DENSITY OF FIELD- EFFECT TRANSISTORS IN AN INVERTER C...antjjournal
In this paper we consider an approach to decrease dimensions of field-effect transistors framework invertors with increasing of their density. Framework the approach it is necessary to manufacture a
heterostructure, which consist of two layers. One of them includes into itself several sections. After manufacturing of the heterostructure these sections should be doped by diffusion or by ion implantation with future optimized annealing of dopant and/or radiation defects. To prognosis the technological process we consider an analytical approach, which gives a possibility to take into account variation of physical parameters in space and time. At the same time the approach gives a possibility to take into
account nonlinearity of mass and heat transport and to analyze the above transport without crosslinking solutions on interfaces between materials of heterostructure.
On Approach to Increase Integration Rate of Elements of a Current Source CircuitBRNSS Publication Hub
In this paper, we introduce an approach to increase integration rate of elements of a current source circuit.
Framework the approach, we consider a heterostructure with special configuration. Several specific
areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/
or radiation defects should be optimized.
ON MODEL OF MANUFACTURING OF A BAND-PASS FILTER TO INCREASE INTEGRATION RATE ...antjjournal
In this paper we introduce an approach to increase integration rate of field-effect heterotransistors in the
framework of band-pass filter. In the framework of the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
On prognozisys of manufacturing double basemsejjournal
In this paper we introduce a modification of recently introduced analytical approach to model mass- and
heat transport. The approach gives us possibility to model the transport in multilayer structures with account
nonlinearity of the process and time-varing coefficients and without matching the solutions at the
interfaces of the multilayer structures. As an example of using of the approach we consider technological
process to manufacture more compact double base heterobipolar transistor. The technological approach
based on manufacturing a heterostructure with required configuration, doping of required areas of this heterostructure
by diffusion or ion implantation and optimal annealing of dopant and/or radiation defects. The
approach gives us possibility to manufacture p-n- junctions with higher sharpness framework the transistor.
In this situation we have a possibility to obtain smaller switching time of p-n- junctions and higher compactness
of the considered bipolar transistor.
ON PROGNOZISYS OF MANUFACTURING DOUBLE-BASE HETEROTRANSISTOR AND OPTIMIZATION...msejjournal
In this paper we introduce a modification of recently introduced analytical approach to model mass- and
heat transport. The approach gives us possibility to model the transport in multilayer structures with account nonlinearity of the process and time-varing coefficients and without matching the solutions at the
interfaces of the multilayer structures. As an example of using of the approach we consider technological
process to manufacture more compact double base heterobipolar transistor. The technological approach
based on manufacturing a heterostructure with required configuration, doping of required areas of this heterostructure by diffusion or ion implantation and optimal annealing of dopant and/or radiation defects. The
approach gives us possibility to manufacture p-n- junctions with higher sharpness framework the transistor.
In this situation we have a possibility to obtain smaller switching time of p-n- junctions and higher compactness of the considered bipolar transistor.
Optimization of Manufacturing of Circuits XOR to Decrease Their Dimensionsijrap
We analyzed possibility to increase density of elements of integrated circuits. We illustrate the possibility
by example of manufacturing of a circuit XOR. Framework the paper we consider a heterostructure which
includes into itself a substrate and an epitaxial layer with specific configuration. Several required areas of
the heterostructure have been doped by diffusion and/or ion implantation. After that we consider optimized
annealing of dopant and/or radiation defects.
OPTIMIZATION OF DOPANT DIFFUSION AND ION IMPLANTATION TO INCREASE INTEGRATION...ijrap
In this work we introduce an approach to decrease dimensions of a field-effect heterotransistors. The approach
based on manufacturing field-effect transistors in heterostructures and optimization of technological
processes. At the same time we consider possibility to simplify their constructions.
OPTIMIZATION OF DOPANT DIFFUSION AND ION IMPLANTATION TO INCREASE INTEGRATION...ijrap
In this work we introduce an approach to decrease dimensions of a field-effect heterotransistors. The approach based on manufacturing field-effect transistors in heterostructures and optimization of technological processes. At the same time we consider possibility to simplify their constructions.
On Approach to Increase Integration rate of Elements of a Circuit Driver with...BRNSS Publication Hub
In this paper, we introduce an approach to increase the integration rate of elements of a driver with 2-tap de-emphasis and impendence matching. Framework the approach, we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
An Approach to Analyze Non-linear Dynamics of Mass Transport during Manufactu...BRNSS Publication Hub
In this paper, we introduce an approach to increase integration rate of elements of a hybrid comparator with the first dynamic amplifying stage and the second quasi-dynamic latching stage. Framework the approach, we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized
On Approach to Increase Integration Rate of Elements of a Switched-capacitor ...BRNSS Publication Hub
In this paper, we introduce an approach to increase integration rate of elements of a switched-
capacitor step-down DC–DC converter. Framework the approach, we consider a heterostructure with
special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion
implantation. Annealing of dopant and/or radiation defects should be optimized.
On Optimization of Manufacturing of Field-Effect Heterotransistors Frame-work...antjjournal
We consider an approach for increasing density of field-effect heterotransistors in a single-stage multi-path operational amplifier. At the same time one can obtain decreasing of dimensions of the above transistors. Dimensions of the elements could be decreased by manufacturing of these elements in a heterostructure with specific structure. The manufacturing is doing by doping of required areas of the heterostructure by diffusion or ion implantation with future optimization of annealing of dopant and/or radiation defects.
MODELING OF MANUFACTURING OF A FIELDEFFECT TRANSISTOR TO DETERMINE CONDITIONS...antjjournal
In this paper we introduce an approach to model technological process of manufacture of a field-effect
heterotransistor. The modeling gives us possibility to optimize the technological process to decrease length
of channel by using mechanical stress. As accompanying results of the decreasing one can find decreasing
of thickness of the heterotransistors and increasing of their density, which were comprised in integrated
circuits.
ON APPROACH TO INCREASE DENSITY OF FIELD- EFFECT TRANSISTORS IN AN INVERTER C...antjjournal
In this paper we consider an approach to decrease dimensions of field-effect transistors framework invertors with increasing of their density. Framework the approach it is necessary to manufacture a
heterostructure, which consist of two layers. One of them includes into itself several sections. After manufacturing of the heterostructure these sections should be doped by diffusion or by ion implantation with future optimized annealing of dopant and/or radiation defects. To prognosis the technological process we consider an analytical approach, which gives a possibility to take into account variation of physical parameters in space and time. At the same time the approach gives a possibility to take into
account nonlinearity of mass and heat transport and to analyze the above transport without crosslinking solutions on interfaces between materials of heterostructure.
On Approach to Increase Integration Rate of Elements of a Current Source CircuitBRNSS Publication Hub
In this paper, we introduce an approach to increase integration rate of elements of a current source circuit.
Framework the approach, we consider a heterostructure with special configuration. Several specific
areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/
or radiation defects should be optimized.
ON MODEL OF MANUFACTURING OF A BAND-PASS FILTER TO INCREASE INTEGRATION RATE ...antjjournal
In this paper we introduce an approach to increase integration rate of field-effect heterotransistors in the
framework of band-pass filter. In the framework of the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
On prognozisys of manufacturing double basemsejjournal
In this paper we introduce a modification of recently introduced analytical approach to model mass- and
heat transport. The approach gives us possibility to model the transport in multilayer structures with account
nonlinearity of the process and time-varing coefficients and without matching the solutions at the
interfaces of the multilayer structures. As an example of using of the approach we consider technological
process to manufacture more compact double base heterobipolar transistor. The technological approach
based on manufacturing a heterostructure with required configuration, doping of required areas of this heterostructure
by diffusion or ion implantation and optimal annealing of dopant and/or radiation defects. The
approach gives us possibility to manufacture p-n- junctions with higher sharpness framework the transistor.
In this situation we have a possibility to obtain smaller switching time of p-n- junctions and higher compactness
of the considered bipolar transistor.
ON PROGNOZISYS OF MANUFACTURING DOUBLE-BASE HETEROTRANSISTOR AND OPTIMIZATION...msejjournal
In this paper we introduce a modification of recently introduced analytical approach to model mass- and
heat transport. The approach gives us possibility to model the transport in multilayer structures with account nonlinearity of the process and time-varing coefficients and without matching the solutions at the
interfaces of the multilayer structures. As an example of using of the approach we consider technological
process to manufacture more compact double base heterobipolar transistor. The technological approach
based on manufacturing a heterostructure with required configuration, doping of required areas of this heterostructure by diffusion or ion implantation and optimal annealing of dopant and/or radiation defects. The
approach gives us possibility to manufacture p-n- junctions with higher sharpness framework the transistor.
In this situation we have a possibility to obtain smaller switching time of p-n- junctions and higher compactness of the considered bipolar transistor.
Optimization of Manufacturing of Circuits XOR to Decrease Their Dimensionsijrap
We analyzed possibility to increase density of elements of integrated circuits. We illustrate the possibility
by example of manufacturing of a circuit XOR. Framework the paper we consider a heterostructure which
includes into itself a substrate and an epitaxial layer with specific configuration. Several required areas of
the heterostructure have been doped by diffusion and/or ion implantation. After that we consider optimized
annealing of dopant and/or radiation defects.
Slide 1: Title Slide
Extrachromosomal Inheritance
Slide 2: Introduction to Extrachromosomal Inheritance
Definition: Extrachromosomal inheritance refers to the transmission of genetic material that is not found within the nucleus.
Key Components: Involves genes located in mitochondria, chloroplasts, and plasmids.
Slide 3: Mitochondrial Inheritance
Mitochondria: Organelles responsible for energy production.
Mitochondrial DNA (mtDNA): Circular DNA molecule found in mitochondria.
Inheritance Pattern: Maternally inherited, meaning it is passed from mothers to all their offspring.
Diseases: Examples include Leber’s hereditary optic neuropathy (LHON) and mitochondrial myopathy.
Slide 4: Chloroplast Inheritance
Chloroplasts: Organelles responsible for photosynthesis in plants.
Chloroplast DNA (cpDNA): Circular DNA molecule found in chloroplasts.
Inheritance Pattern: Often maternally inherited in most plants, but can vary in some species.
Examples: Variegation in plants, where leaf color patterns are determined by chloroplast DNA.
Slide 5: Plasmid Inheritance
Plasmids: Small, circular DNA molecules found in bacteria and some eukaryotes.
Features: Can carry antibiotic resistance genes and can be transferred between cells through processes like conjugation.
Significance: Important in biotechnology for gene cloning and genetic engineering.
Slide 6: Mechanisms of Extrachromosomal Inheritance
Non-Mendelian Patterns: Do not follow Mendel’s laws of inheritance.
Cytoplasmic Segregation: During cell division, organelles like mitochondria and chloroplasts are randomly distributed to daughter cells.
Heteroplasmy: Presence of more than one type of organellar genome within a cell, leading to variation in expression.
Slide 7: Examples of Extrachromosomal Inheritance
Four O’clock Plant (Mirabilis jalapa): Shows variegated leaves due to different cpDNA in leaf cells.
Petite Mutants in Yeast: Result from mutations in mitochondrial DNA affecting respiration.
Slide 8: Importance of Extrachromosomal Inheritance
Evolution: Provides insight into the evolution of eukaryotic cells.
Medicine: Understanding mitochondrial inheritance helps in diagnosing and treating mitochondrial diseases.
Agriculture: Chloroplast inheritance can be used in plant breeding and genetic modification.
Slide 9: Recent Research and Advances
Gene Editing: Techniques like CRISPR-Cas9 are being used to edit mitochondrial and chloroplast DNA.
Therapies: Development of mitochondrial replacement therapy (MRT) for preventing mitochondrial diseases.
Slide 10: Conclusion
Summary: Extrachromosomal inheritance involves the transmission of genetic material outside the nucleus and plays a crucial role in genetics, medicine, and biotechnology.
Future Directions: Continued research and technological advancements hold promise for new treatments and applications.
Slide 11: Questions and Discussion
Invite Audience: Open the floor for any questions or further discussion on the topic.
Nutraceutical market, scope and growth: Herbal drug technologyLokesh Patil
As consumer awareness of health and wellness rises, the nutraceutical market—which includes goods like functional meals, drinks, and dietary supplements that provide health advantages beyond basic nutrition—is growing significantly. As healthcare expenses rise, the population ages, and people want natural and preventative health solutions more and more, this industry is increasing quickly. Further driving market expansion are product formulation innovations and the use of cutting-edge technology for customized nutrition. With its worldwide reach, the nutraceutical industry is expected to keep growing and provide significant chances for research and investment in a number of categories, including vitamins, minerals, probiotics, and herbal supplements.
Observation of Io’s Resurfacing via Plume Deposition Using Ground-based Adapt...Sérgio Sacani
Since volcanic activity was first discovered on Io from Voyager images in 1979, changes
on Io’s surface have been monitored from both spacecraft and ground-based telescopes.
Here, we present the highest spatial resolution images of Io ever obtained from a groundbased telescope. These images, acquired by the SHARK-VIS instrument on the Large
Binocular Telescope, show evidence of a major resurfacing event on Io’s trailing hemisphere. When compared to the most recent spacecraft images, the SHARK-VIS images
show that a plume deposit from a powerful eruption at Pillan Patera has covered part
of the long-lived Pele plume deposit. Although this type of resurfacing event may be common on Io, few have been detected due to the rarity of spacecraft visits and the previously low spatial resolution available from Earth-based telescopes. The SHARK-VIS instrument ushers in a new era of high resolution imaging of Io’s surface using adaptive
optics at visible wavelengths.
A brief information about the SCOP protein database used in bioinformatics.
The Structural Classification of Proteins (SCOP) database is a comprehensive and authoritative resource for the structural and evolutionary relationships of proteins. It provides a detailed and curated classification of protein structures, grouping them into families, superfamilies, and folds based on their structural and sequence similarities.
Cancer cell metabolism: special Reference to Lactate PathwayAADYARAJPANDEY1
Normal Cell Metabolism:
Cellular respiration describes the series of steps that cells use to break down sugar and other chemicals to get the energy we need to function.
Energy is stored in the bonds of glucose and when glucose is broken down, much of that energy is released.
Cell utilize energy in the form of ATP.
The first step of respiration is called glycolysis. In a series of steps, glycolysis breaks glucose into two smaller molecules - a chemical called pyruvate. A small amount of ATP is formed during this process.
Most healthy cells continue the breakdown in a second process, called the Kreb's cycle. The Kreb's cycle allows cells to “burn” the pyruvates made in glycolysis to get more ATP.
The last step in the breakdown of glucose is called oxidative phosphorylation (Ox-Phos).
It takes place in specialized cell structures called mitochondria. This process produces a large amount of ATP. Importantly, cells need oxygen to complete oxidative phosphorylation.
If a cell completes only glycolysis, only 2 molecules of ATP are made per glucose. However, if the cell completes the entire respiration process (glycolysis - Kreb's - oxidative phosphorylation), about 36 molecules of ATP are created, giving it much more energy to use.
IN CANCER CELL:
Unlike healthy cells that "burn" the entire molecule of sugar to capture a large amount of energy as ATP, cancer cells are wasteful.
Cancer cells only partially break down sugar molecules. They overuse the first step of respiration, glycolysis. They frequently do not complete the second step, oxidative phosphorylation.
This results in only 2 molecules of ATP per each glucose molecule instead of the 36 or so ATPs healthy cells gain. As a result, cancer cells need to use a lot more sugar molecules to get enough energy to survive.
Unlike healthy cells that "burn" the entire molecule of sugar to capture a large amount of energy as ATP, cancer cells are wasteful.
Cancer cells only partially break down sugar molecules. They overuse the first step of respiration, glycolysis. They frequently do not complete the second step, oxidative phosphorylation.
This results in only 2 molecules of ATP per each glucose molecule instead of the 36 or so ATPs healthy cells gain. As a result, cancer cells need to use a lot more sugar molecules to get enough energy to survive.
introduction to WARBERG PHENOMENA:
WARBURG EFFECT Usually, cancer cells are highly glycolytic (glucose addiction) and take up more glucose than do normal cells from outside.
Otto Heinrich Warburg (; 8 October 1883 – 1 August 1970) In 1931 was awarded the Nobel Prize in Physiology for his "discovery of the nature and mode of action of the respiratory enzyme.
WARNBURG EFFECT : cancer cells under aerobic (well-oxygenated) conditions to metabolize glucose to lactate (aerobic glycolysis) is known as the Warburg effect. Warburg made the observation that tumor slices consume glucose and secrete lactate at a higher rate than normal tissues.
Richard's entangled aventures in wonderlandRichard Gill
Since the loophole-free Bell experiments of 2020 and the Nobel prizes in physics of 2022, critics of Bell's work have retreated to the fortress of super-determinism. Now, super-determinism is a derogatory word - it just means "determinism". Palmer, Hance and Hossenfelder argue that quantum mechanics and determinism are not incompatible, using a sophisticated mathematical construction based on a subtle thinning of allowed states and measurements in quantum mechanics, such that what is left appears to make Bell's argument fail, without altering the empirical predictions of quantum mechanics. I think however that it is a smoke screen, and the slogan "lost in math" comes to my mind. I will discuss some other recent disproofs of Bell's theorem using the language of causality based on causal graphs. Causal thinking is also central to law and justice. I will mention surprising connections to my work on serial killer nurse cases, in particular the Dutch case of Lucia de Berk and the current UK case of Lucy Letby.
2. 1. Introduction
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22
22
2
2
2
2
2
24. Let’s skip Example 5.
Example 6. Rectangular vs. polar coordinates. (reciprocal)
sin
cos
ry
rx
x
y
yxr
1
22
tan
222
2
1
)/(1
/
tani)
r
y
xy
xy
x
y
xx
yrr
x
sincosii)
y
r
ry
yy
yy
x
y
2
222
2
/sin
)csc(cot
i) and ii)-1 are different!!
constant y
constant r
25. This is a general rule: partial derivatives are not usually
reciprocals; they are reciprocals if the other independent variables (besides u or v)
are the same in both cases.
uvvu /&/
27. 8. Application of partial differentiation to maximum and minimum problems
- dy/dx=0 is a sufficient condition for max. or min. of f(x).
min. (concave) max. (convex)
inflection
(d2y/dx2 > 0) (d2y/dx2 < 0)
(d2y/dx2 = 0)
cf. saddle point
- To minimize z = f(x,y),
.0&0
y
z
x
z
28. 28/15
t.independenare),,(ofvariablesonly two
fixedtantan2
2
1 2
lw
lwwlwV
Example. A pup tent of given volume, V, with ends but no floor, is to be made
using the least possible material. find the proportions.
w2 l
To minimize A,
.0cotcsc
2
sec2,0
csc2
tan4 22
2
w
V
w
A
w
V
w
w
A
tan
.csc
2
tan2
tancos
2
tan2
cos
2
tan2areaMaterial
2
2
2
2
2
w
V
l
w
V
w
w
Vw
w
lw
wA
.2/2,45,2/1cos0cos,0sin
.
sin
coscos
sin2
cos
sec
cotcsc
tan2
csc
22
2
2
22
3
lwlwV
or
VV
w
31. 31/15
Example 2. Shortest distance from the origin to the plane .322 zyx
.1
3
2
3
2
3
1
3
1
3
2
0222232,0222232
.0on,minimizatiFor
neliminatio223
222
min
222222
f
xzy
zzy
z
f
yzy
y
f
z
f
y
f
zyzyzyxf
cf. Equation of plane, ax+by+cz=d
If (a,b,c) is a unit vector, abs(d) is a distance from the origin.
32. 32/15
(c) Lagrange Multipliers
yxyxfyxF
yy
f
xx
f
dy
yy
f
dx
xx
f
dy
y
dx
x
d
dy
y
f
dx
x
f
df
constyxyxf
,,,ofmin.ormax.forcondition
0,0
0
constraint
min.ormax.forcondition
.),(),,(
‘two functions’
‘single function’
cf. valid for more than variables, ex. (x,y,z)
33. 33/15
.02
.1,0.12220
,
1,,,
222
222
y
y
F
xxxx
x
F
xyyxfyxF
xyyxyxyxf
- Using the Lagrange multipliers,
.
2
1
,
2
1
1
2,10
xy
yx
2
1 xy
34. 34/15
Example 3. Find the volume of the largest rectangular parallelepiped (that is box)
with edges parallel to the axes, inscribed in the ellipsoid, 12
2
2
2
2
2
c
z
b
y
a
x
.0
2
8,0
2
8,0
2
8
8,,
1,,
222
2
2
2
2
2
2
2
2
2
2
2
2
c
z
xy
z
F
b
y
xz
y
F
a
x
yz
x
F
c
z
b
y
a
x
xyzfzyxF
c
z
b
y
a
x
zyx
.120283283 2
2
2
2
2
2
xyzxyz
c
x
b
x
a
x
xyz
Multiplying each equation with the other variable, and then, adding all three,
33
8
8volumeMaximum
3
1
,
3
1
Similarly,
.
3
1
0
2
128
2
8
2222
22
22
abc
xyzczby
ax
a
x
xyzyz
a
x
yz
x
F
35. 35/15
- More constraints
0
,0
,0
.,,,.,,,,),,,,(
2222
2
1111
1
21
dw
w
dz
z
dy
y
dx
x
d
dw
w
dz
z
dy
y
dx
x
d
dw
w
f
dz
x
f
dy
y
f
dx
x
f
df
constwzyxconstwzyxwzyxf
37. 37/15
Example 4. Minimized distance from the origin to the intersection of
0247,6 zxxy
.2/510/7,2/5,5/12
.0242,02,072
247
1221
21
222
2211
dzyx
z
z
F
xy
y
F
yx
x
F
xyzxzyx
fF
38. 38/15
10. Endpoint or boundary point problems (끝점 혹은 경계점 문제)
- Besides the extreme points, we should check the boundary points (or lines).
case I case II
case III case IV
39. 39/15
Example 1. A piece of wire 40 cm long is to be used to form the perimeters of a
square and a circle in such a way as to make the total area (of a square and circle) a
maximum.
.56,8.2,5
4
1
.010
4
12
2
1
2
1
1022
2
1
10
2
2
Arr
rrr
dr
dA
rrA
.:0
4
122
2
Min
dr
Ad
**
circleonly.127/400,/20,402At
squareonly.100,0At
Arr
Ar
Considering the values at the boundary points,
r
(40-2r)/4
40. 40/15
Example 2. The temperature in a rectangular plate bounded by the lines,
5,3,0,0 yxyx
10022
yxxyT
.100,002,02 22
Tyxxxy
y
T
xyy
x
T
(0,0)
(3,5)
x=3
y=5
.
4
1
131,
2
5
01025
100525
5)2
.
4
1
93,
2
3
096
10093
3)1
2
2
Txx
dx
dT
xxT
y
Tyy
dy
dT
yyT
x
and check corners. At (3,5), T= 130.
- Differentiating,
- Boundary check
max.
min.
43. 11. Change of variables
Sometimes, we can make the differential equation simpler by changing variables.
Example 1. Make the change of variables.
0
1
,, 2
2
22
2
t
F
vx
F
vtxsvtxr
F
srs
F
r
F
x
s
s
F
x
r
r
F
x
F
)(
F
sr
v
s
F
v
r
F
v
t
s
s
F
t
r
r
F
t
F
)(
Here, we can use the operation notation,
srx
)(
sr
v
t
51. 12. Differentiation of integrals; Leibniz’ rule
.
.
dx
du
uf
dx
dv
vfdttf
dx
d
aFxFtFdttf
dx
xdF
xf
xv
xu
x
a
x
a
‘Leibniz’rule’
.,,,
v
u
xv
xu
dt
x
f
dx
du
uxf
dx
dv
vxfdttxf
dx
d