This document describes a family of test systems for evaluating the reliability of high voltage devices under different stress conditions. The XINThv-sb system tests up to 80 devices in parallel under high temperature reverse bias and gate bias stresses to detect device breakdown. The XINThv-hc system tests up to 15 devices under hot carrier injection stress and performs JEDEC characterization during stressing. The XINThv-em system is under development and will test up to 60 devices under electromigration stress. Powerful software is used to control testing, monitor results in real-time, and perform off-line data analysis.

1. XINT – Device Reliability Testing
High Voltage Reliability
Test System Family
• XINThv-sb static HTRB-HTGB stress and test
• XINThv-hc HCI stress, test and characterization
• XINThv-em electromigration test
• Powerful software for development and analysis

2. XINThv-sb
 Reliability test on transistor structures
 P and N channel devices, 80 devices tested in parallel
 -50 ..+150°C temperature
 HTRB (High temperature reverse bias)
o Up to 2000V drain voltage
o Gate tied to ground
o Ids monitoring during stress for device life sign
o Breakdown detection
 HTRB (High temperature gate bias)
o Up to 100V gate voltage
o Drain tied to ground
o Igs monitoring during stress for device life sign
o Breakdown detection

3. XINThv-hc
 Reliability test on transistor structures
 JEDEC characterization during stress
 P and N channel devices, 15 devices tested in parallel
 -50 ..+175°C temperature
 HCI (hot carrier injection)
o Up to 2000V drain voltage, up to 100V gate voltage
o Up to 200mA per device, 2uA measurement accuracy
o Ids monitoring during stress for device life sign
o Gate and drain breakdown detection
 JEDEC characterization
o Linear and logarithmic time interval programmable
o Ids(Vg) and Ids (Vd) per device

4. XINThv-em (in development)
 Reliability test on resistor structures
 60 devices tested in parallel
 Temperature up to +350°C
 High-current electromigration test
o Independent parameters per board
o Up to 3A per device
o High accuracy resistance measurement
o Extrusion current measurement with 1nA resolution

5. Software for Execution and Analysis
 Common control software based on NTEE
o Local and remote control and monitor possibility
o Engineering mode for interactive parameter selection
o Operator mode for safe and reliable test execution
 On-the-fly data consultation
o Test results can be consulted during execution
o Plots and numerical information
o EXCEL export
 Off-line processing using BARNIE
o Datalogs can be stored in the BARNIE test data analysis suite
o Characterization curves
o Fail trends
o Parametric trends
o Fail density and weibull diagrams

6. Integration with Data Analysis
Test result generation
o Bitmaps and detailed test results can be sent
on-line via TCP-IP to a data analysis tools
o XML-based datalog
o STDF datalog (future)
BARNIE test data analysis suite
o Bitmap view and processing
o BIST result post-processing
o Datalog load and analysis

7. NplusT
would like to thank you
for your time and consideration
for further information: info@n-plus-t.com