Temperature effect in GaAs

1. 𝐸𝑔(𝑇) = 𝐸𝑔(0) −
𝛼𝑇2
(𝛽+𝑇)
𝐹𝑜𝑟 𝐺𝑎𝐴𝑠 𝐸𝑔(0) = 1.519 𝑒𝑉 , and α = 5.58×10−4
𝑒𝑉/𝐾 , β = 220
The temperature differenceis taken respectively 10 K .
For different temperature 𝐸𝑔 is ,
10 K 1.518 70k 1.509 130k 1.492 190k 1.469
20 k 1.518 80k 1.507 140k 1.488 200k 1.465
30k 1.516 90k 1.504 150k 1.485 210k 1.461
40k 1.515 100k 1.501 160 1.481 220k 1.457
50k 1.514 110k 1.498 170 1.477 230k 1.453
60k 1.512 120k 1.495 180 1.473 240k 1.449
250k 1.445 260k 1.440 270k 1.435 280k 1.431
290k 1.426 300k 1.422
1.4
1.42
1.44
1.46
1.48
1.5
1.52
1.54
0 50 100 150 200 250 300 350
Eg(T)
Temperature

2. Assignment on Temperature Effect in Band
Gap using “Varshni Parameters” For GaAs
Student Name: Md. Mohiuddin Murad
ID : 2015-2-55-027
Course Title: Electronic Properties of
Materials
Course Code : ETE 219
Submitted To :

3. Submitted to :DNAJ
Submission Date : 07-12-2017