4. UJT
• UJT consists of a lightly doped N-type Si bar into which heavily doped
P-type material is diffused.
• P-type material is closer to the B2.
• In the symbol the arrow at the junction represents that the flow of
conventional current from the emitter to B1.
6. • Diode ‘D” represents PN Junction.
• Interbase resistance between B2 and B1 is RBB.
• RBB = RB1 + RB2
• RB1 > RB2
RB1 is represented as variable resistor as its resistance various with the
variation of the biasing voltage.