This document compares the specifications of two versions of an integrated circuit. Version 1 has lower output voltage swing, smaller transistor widths for transistors M_N5 through M_N8, a larger transistor width for M_MOP, higher voltages for nodes V_V1 and V_V2, a higher resistance for R_R3, and a smaller capacitance for C_C1 compared to Version 2. Version 2 provides higher output voltage swing, larger transistor widths for transistors M_N5 through M_N8, a smaller transistor width for M_MOP, lower voltages for nodes V_V1 and V_V2, a lower resistance for R_R3, and a larger capacitance for

1. TC75S101FE Output Voltage Swing Version 1 Version 2 M_N5 W=285.094u W=712.735u M_N6 W=285.094u W=712.735u M_N7 W=285.094u W=712.735u M_N8 W=285.094u W=712.735u M_MOP W=25.4u W=20.18u V_V1 0.0855 -0.00503 V_V2 0.0441 -0.062 R_R3 0.108MEG 0.1028MEG C_C1 63p 65p .model MbreakND1 NMOS KP=4E-5 KP=1.6E-5 Version 1 Version 2 VOH(V) 2.900 2.990 VOL(V) 0.100 0.010