GaN Technology Top-100 IP profiles - SampleKnowmade
The field of III-N semiconductors has shown an intensive patenting activity since early 1990s, with a substantial increase during the past decade. Today, more than 76,200 patents and patent applications related to over 39,700 inventions on GaN technology have been published worldwide through November 2016. This fact is correlated with a rapid growth of the industrial activity related to GaN, mainly due to light-emitting diodes, but also to the emergence of lasers and high-power/high-frequency electronics. Moreover, the current diversification of GaN-related research activities is remarkable, ranging from advanced optical sources and single-electron devices to physical, chemical, and biological sensors, optical detectors, and energy converters. In this dynamic and large context, it is necessary to have a clear overview of main companies and research laboratories involved in this technology domain.
The report provides essential patent data for IP players related to GaN technology. It identifies 100 major patent holders involved in GaN technology, and its provides in a single slide the IP profile of each main patent holder including: time evolution of patent publications, geographic map of patenting activity, technical segments, highly cited patents, main IP competitors and IP collaborators.
In this work, the performances of a solar cell based on InGaN were simulated under the illumination conditions of one sun by employing SILVACO software.
GaN and SiC for power electronics applications 2015 Report by Yole DeveloppementYole Developpement
The SiC market is expected to treble and GaN is expected to explode - if challenges are overcome
In 2014, the SiC chip business was worth more than $133M. As in previous years, power factor correction (PFC) and photovoltaics (PV) are still the leading applications.
SiC diodes represent more than 80% of the market. In 2020, diodes will remain the main contributor across various applications, including electric and hybrid electric vehicles (EV/HEV), PV, PFC, wind, Uninterruptible Power Supplies (UPS) and motor drives.
SiC transistors will grow in parallel with diodes, driven by PV inverters. Challenges must be overcome prior to the adoption of pure SiC solutions for EV power train inverters, which is nevertheless expected by 2020.
Including the growth in both diodes and transistors we expect the total SiC market to more than treble by 2020, reaching $436M...
Power GaN 2016: Epitaxy and Devices, Applications, and Technology Trends - 20...Yole Developpement
GaN power devices: a promising, fast-growing market
A GROWING MARKET WITH LOTS OF EXCITING NEWS IN 2015 - 2016
2015 - 2016 has been an exciting year for the gallium nitride (GaN) power business. Up until late 2014, 600V/650V GaN HEMTs’ commercial availability was still questionable, despite some announcements from different players. Fast-forward to 2016 end users can now buy not only low-voltage GaN (<200V) devices from Efficient Power Conversion (EPC), but also high-voltage (600V/650V) components from several players, including Transphorm, GaN Systems, and Panasonic.
Also, a new start-up, Navitas Semiconductor, announced their GaN power IC in March 2016, followed by Dialog Semiconductors revealing their GaN power IC in August 2016. The idea
of bringing GaN from the power semiconductor market to the much bigger analog IC market is of interest to several other players too. For example, EPC and GaN Systems are both working on a more integrated solution, and Texas Instruments, a well-established analog IC player, has also been engaged in GaN activities, releasing an 80V power stage and 600V power stage in 2015 and 2016, respectively.
Despite these exciting developments, the GaN power market remains small compared to the gigantic $335B silicon semiconductor market. In fact, according to Yole Développement (Yole) investigation the GaN power business was less than $10M in 2015. But before you think twice about GaN, remember that a small market size is not unusual for products just appearing on the market.
The first GaN devices were not commercially available until 2010, so we are talking about an industry that is only six years old. What is most important is the GaN market’s future potential – and Yole expects the GaN power business to grow, reaching a market size of around $300M in 2021 at a 2016 – 2021 CAGR of 86%.
This report provides a structured vision of the GaN power device market in terms of uses, applications, and potential trends.
GaN Technology Top-100 IP profiles - SampleKnowmade
The field of III-N semiconductors has shown an intensive patenting activity since early 1990s, with a substantial increase during the past decade. Today, more than 76,200 patents and patent applications related to over 39,700 inventions on GaN technology have been published worldwide through November 2016. This fact is correlated with a rapid growth of the industrial activity related to GaN, mainly due to light-emitting diodes, but also to the emergence of lasers and high-power/high-frequency electronics. Moreover, the current diversification of GaN-related research activities is remarkable, ranging from advanced optical sources and single-electron devices to physical, chemical, and biological sensors, optical detectors, and energy converters. In this dynamic and large context, it is necessary to have a clear overview of main companies and research laboratories involved in this technology domain.
The report provides essential patent data for IP players related to GaN technology. It identifies 100 major patent holders involved in GaN technology, and its provides in a single slide the IP profile of each main patent holder including: time evolution of patent publications, geographic map of patenting activity, technical segments, highly cited patents, main IP competitors and IP collaborators.
In this work, the performances of a solar cell based on InGaN were simulated under the illumination conditions of one sun by employing SILVACO software.
GaN and SiC for power electronics applications 2015 Report by Yole DeveloppementYole Developpement
The SiC market is expected to treble and GaN is expected to explode - if challenges are overcome
In 2014, the SiC chip business was worth more than $133M. As in previous years, power factor correction (PFC) and photovoltaics (PV) are still the leading applications.
SiC diodes represent more than 80% of the market. In 2020, diodes will remain the main contributor across various applications, including electric and hybrid electric vehicles (EV/HEV), PV, PFC, wind, Uninterruptible Power Supplies (UPS) and motor drives.
SiC transistors will grow in parallel with diodes, driven by PV inverters. Challenges must be overcome prior to the adoption of pure SiC solutions for EV power train inverters, which is nevertheless expected by 2020.
Including the growth in both diodes and transistors we expect the total SiC market to more than treble by 2020, reaching $436M...
Power GaN 2016: Epitaxy and Devices, Applications, and Technology Trends - 20...Yole Developpement
GaN power devices: a promising, fast-growing market
A GROWING MARKET WITH LOTS OF EXCITING NEWS IN 2015 - 2016
2015 - 2016 has been an exciting year for the gallium nitride (GaN) power business. Up until late 2014, 600V/650V GaN HEMTs’ commercial availability was still questionable, despite some announcements from different players. Fast-forward to 2016 end users can now buy not only low-voltage GaN (<200V) devices from Efficient Power Conversion (EPC), but also high-voltage (600V/650V) components from several players, including Transphorm, GaN Systems, and Panasonic.
Also, a new start-up, Navitas Semiconductor, announced their GaN power IC in March 2016, followed by Dialog Semiconductors revealing their GaN power IC in August 2016. The idea
of bringing GaN from the power semiconductor market to the much bigger analog IC market is of interest to several other players too. For example, EPC and GaN Systems are both working on a more integrated solution, and Texas Instruments, a well-established analog IC player, has also been engaged in GaN activities, releasing an 80V power stage and 600V power stage in 2015 and 2016, respectively.
Despite these exciting developments, the GaN power market remains small compared to the gigantic $335B silicon semiconductor market. In fact, according to Yole Développement (Yole) investigation the GaN power business was less than $10M in 2015. But before you think twice about GaN, remember that a small market size is not unusual for products just appearing on the market.
The first GaN devices were not commercially available until 2010, so we are talking about an industry that is only six years old. What is most important is the GaN market’s future potential – and Yole expects the GaN power business to grow, reaching a market size of around $300M in 2021 at a 2016 – 2021 CAGR of 86%.
This report provides a structured vision of the GaN power device market in terms of uses, applications, and potential trends.
【DLゼミ】XFeat: Accelerated Features for Lightweight Image Matchingharmonylab
公開URL:https://arxiv.org/pdf/2404.19174
出典:Guilherme Potje, Felipe Cadar, Andre Araujo, Renato Martins, Erickson R. ascimento: XFeat: Accelerated Features for Lightweight Image Matching, Proceedings of the 2024 IEEE/CVF Conference on Computer Vision and Pattern Recognition (CVPR) (2023)
概要:リソース効率に優れた特徴点マッチングのための軽量なアーキテクチャ「XFeat(Accelerated Features)」を提案します。手法は、局所的な特徴点の検出、抽出、マッチングのための畳み込みニューラルネットワークの基本的な設計を再検討します。特に、リソースが限られたデバイス向けに迅速かつ堅牢なアルゴリズムが必要とされるため、解像度を可能な限り高く保ちながら、ネットワークのチャネル数を制限します。さらに、スパース下でのマッチングを選択できる設計となっており、ナビゲーションやARなどのアプリケーションに適しています。XFeatは、高速かつ同等以上の精度を実現し、一般的なラップトップのCPU上でリアルタイムで動作します。
セル生産方式におけるロボットの活用には様々な問題があるが,その一つとして 3 体以上の物体の組み立てが挙げられる.一般に,複数物体を同時に組み立てる際は,対象の部品をそれぞれロボットアームまたは治具でそれぞれ独立に保持することで組み立てを遂行すると考えられる.ただし,この方法ではロボットアームや治具を部品数と同じ数だけ必要とし,部品数が多いほどコスト面や設置スペースの関係で無駄が多くなる.この課題に対して音𣷓らは組み立て対象物に働く接触力等の解析により,治具等で固定されていない対象物が組み立て作業中に運動しにくい状態となる条件を求めた.すなわち,環境中の非把持対象物のロバスト性を考慮して,組み立て作業条件を検討している.本研究ではこの方策に基づいて,複数物体の組み立て作業を単腕マニピュレータで実行することを目的とする.このとき,対象物のロバスト性を考慮することで,仮組状態の複数物体を同時に扱う手法を提案する.作業対象としてパイプジョイントの組み立てを挙げ,簡易な道具を用いることで単腕マニピュレータで複数物体を同時に把持できることを示す.さらに,作業成功率の向上のために RGB-D カメラを用いた物体の位置検出に基づくロボット制御及び動作計画を実装する.
This paper discusses assembly operations using a single manipulator and a parallel gripper to simultaneously
grasp multiple objects and hold the group of temporarily assembled objects. Multiple robots and jigs generally operate
assembly tasks by constraining the target objects mechanically or geometrically to prevent them from moving. It is
necessary to analyze the physical interaction between the objects for such constraints to achieve the tasks with a single
gripper. In this paper, we focus on assembling pipe joints as an example and discuss constraining the motion of the
objects. Our demonstration shows that a simple tool can facilitate holding multiple objects with a single gripper.