This document summarizes the results of simulations run on a CMS17 diode model at different temperatures using the XTI parameter. It shows that the XTI parameter allows the forward current and capacitance characteristics to be accurately modeled at temperatures other than 25C by comparing the simulation results to experimental data from a real diode. Testing confirmed that the model exhibits the same reproducibility across temperatures as the actual diode.

1. サーマル・デバイスモデリングの現状
SPICEの温度設定で.TEMPの機能があります。
ダイオードの場合、温度パラメータはXTIに相当しますが、実デバイスの
温度特性と比較し、再現性が無い為、実際には各温度における特性から
モデリングする事が現実的です。
御社のCMS17にてXTIにおける再現性について調査致しました。
All Rights Reserved copyright (C) Bee Technologies Inc. 2006

2. V_V1
0V 100mV 200mV 300mV 400mV 500mV 600mV 700mV 800mV
I(D8)
10mA
100mA
1.0A
10A
Forward Simulation at XTI temperature
XTI=4.0
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3. XTI Value=4.0
0 .0 1
0 .1
1
1 0
0 0 .2 0 .4 0 .6 0 .8 1
Voltage (V)
ForwardCurrent(A)
2 5 Cm
XTI2 5 C1
7 5 Cm
XTI7 5 C
1 2 5 Cm
XTI1 2 5 C
1 5 0 Cm
XTI1 5 0 C
Forward Simulation at XTI temperature
IF (A)
Voltage (V)
25Cm XTI25C1 75Cm XTI75C 75C% Error 125Cm XTI125C 125C% Error 150Cm XTI150C 150C% Error
0.01 0.311 0.311 0.233 0.235 0.858 0.145 0.155 6.897 0.110 0.119 8.182
0.02 0.328 0.328 0.250 0.260 4.000 0.165 0.180 9.091 0.130 0.138 6.154
0.05 0.352 0.352 0.275 0.270 -1.818 0.197 0.205 4.061 0.160 0.165 3.125
0.1 0.372 0.372 0.295 0.305 3.390 0.220 0.225 2.273 0.185 0.185 0.000
0.2 0.390 0.390 0.315 0.325 3.175 0.250 0.248 -0.800 0.212 0.210 -0.943
0.5 0.420 0.420 0.350 0.360 2.857 0.295 0.280 -5.085 0.260 0.248 -4.615
1 0.443 0.443 0.380 0.385 1.316 0.337 0.315 -6.528 0.300 0.280 -6.667
2 0.475 0.475 0.425 0.430 1.176 0.389 0.360 -7.455 0.360 0.325 -9.722
5 0.540 0.540 0.515 0.490 -4.854 0.484 0.435 -10.124 0.465 0.405 -12.903
10 0.638 0.638 0.640 0.580 -9.375 0.590 0.540 -8.475 0.585 0.490 -16.239
XTI=4.0
All Rights Reserved copyright (C) Bee Technologies Inc. 2006

4. V(N06744)@1
0V 2V 4V 6V 8V 10V 12V 14V 16V 18V 20V 22V 24V 26V 28V
I(V2)/(30V/1us)
10p
100p
1.0n
Capacitance Simulation at XTI temperature
All Rights Reserved copyright (C) Bee Technologies Inc. 2006

5. V
Cj (pF
25CM 25CXTI 75CM 75CXTI 75%Error 125CM 125CXTI 125%Error 150CM 150CXTI 150%Error
1 238.800 238.800 399.500 237.000 -40.676 465.000 185.000 -60.215 480.000 88.000 -81.667
2 180.000 180.000 300.700 178.000 -40.805 458.000 138.000 -69.869 475.000 68.000 -85.684
5 120.800 120.800 170.000 118.000 -30.588 445.000 88.000 -80.225 462.000 44.000 -90.476
10 87.680 87.680 103.400 85.000 -17.795 430.000 64.000 -85.116 445.000 30.000 -93.258
20 63.990 63.990 69.600 60.050 -13.721 411.000 44.000 -89.294 425.000 21.000 -95.059
30 54.070 54.070 56.000 50.000 -10.714 398.000 38.000 -90.452 414.000 19.000 -95.411
Capacitance Simulation at XTI temperature
10
100
1000
0 1 0 2 0 3 0
Voltage (V)
Cj(pF)
25CM
25CXTI
75CM
75CXTI
125CM
125CXTI
150CM
150CXTI
All Rights Reserved copyright (C) Bee Technologies Inc. 2006

6. *$
* PARTNUMBER: CMS17
* MANUFACTURER:
TOSHIBA
* VRM=30,IF=2A, IFSM=30A
.MODEL DCMS17 D
+ IS=53.036E-9
+ N=1
+ RS=14.029E-3
+ IKF=1.0000E3
+ XTI=4
+ EG=.68
+ CJO=407.48E-12
+ M=.45845
+ VJ=.3905
+ BV=30
+ IBV=10.000E-6
+ ISR=0
+ TT=0
*$
Simulation at XTI temperature
SPICE MODEL
All Rights Reserved copyright (C) Bee Technologies Inc. 2006

7. IV and Cj same Simulation at XTI temperature
All Rights Reserved copyright (C) Bee Technologies Inc. 2006