PN junction experiment by Dr. D.K. Upreti.pdf
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This document summarizes an experiment to characterize a PN junction diode. It includes objectives to understand semiconductor devices and the PN junction diode's characteristics. The apparatus section lists equipment like a voltmeter, ammeter, battery and PN junction diode. The theory section explains the formation of a PN junction when a P-type and N-type semiconductor are joined. Observations of forward and reverse bias measurements are shown in tables. Graphs are drawn of the forward and reverse current-voltage characteristics. The results show the diode's nonlinear behavior and it only conducts in one direction. Precautions take to accurately measure small currents and avoid overheating the diode are noted.
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I will then present some software engineering and AI techniques that can support the strategic exploration of variability spaces. These include the use of abstractions and models (e.g., feature models), sampling strategies (e.g., uniform, random), cost-effective measurements (e.g., incremental build of software configurations), and dimensionality reduction methods (e.g., transfer learning, feature selection, software debloating).
I will finally argue that deep variability is both the problem and solution of frictionless reproducibility, calling the software science community to develop new methods and tools to manage variability and foster reproducibility in software systems.
Exposé invité Journées Nationales du GDR GPL 2024
The binding of cosmological structures by massless topological defects
Assuming spherical symmetry and weak field, it is shown that if one solves the Poisson equation or the Einstein field
equations sourced by a topological defect, i.e. a singularity of a very specific form, the result is a localized gravitational
field capable of driving flat rotation (i.e. Keplerian circular orbits at a constant speed for all radii) of test masses on a thin
spherical shell without any underlying mass. Moreover, a large-scale structure which exploits this solution by assembling
concentrically a number of such topological defects can establish a flat stellar or galactic rotation curve, and can also deflect
light in the same manner as an equipotential (isothermal) sphere. Thus, the need for dark matter or modified gravity theory is
mitigated, at least in part.
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原版制作(carleton毕业证书)卡尔顿大学毕业证硕士文凭原版一模一样
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留信网认证的作用:
1:该专业认证可证明留学生真实身份
2:同时对留学生所学专业登记给予评定
3:国家专业人才认证中心颁发入库证书
4:这个认证书并且可以归档倒地方
5:凡事获得留信网入网的信息将会逐步更新到个人身份内，将在公安局网内查询个人身份证信息后，同步读取人才网入库信息
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8:在国家人才网主办的国家网络招聘大会中纳入资料，供国家高端企业选择人才
Randomised Optimisation Algorithms in DAPHNE
Slides from talk:
Aleš Zamuda: Randomised Optimisation Algorithms in DAPHNE .
Austrian-Slovenian HPC Meeting 2024 – ASHPC24, Seeblickhotel Grundlsee in Austria, 10–13 June 2024
https://ashpc.eu/
SAR of Medicinal Chemistry 1st by dk.pdf
In this presentation include the prototype drug SAR on thus or with their examples .
Syllabus of Second Year B. Pharmacy
2019 PATTERN.
Micronuclei test.M.sc.zoology.fisheries.
Current Ms word generated power point presentation covers major details about the micronuclei test. It's significance and assays to conduct it. It is used to detect the micronuclei formation inside the cells of nearly every multicellular organism. It's formation takes place during chromosomal sepration at metaphase.
Phenomics assisted breeding in crop improvement
As the population is increasing and will reach about 9 billion upto 2050. Also due to climate change, it is difficult to meet the food requirement of such a large population. Facing the challenges presented by resource shortages, climate
change, and increasing global population, crop yield and quality need to be improved in a sustainable way over the coming decades. Genetic improvement by breeding is the best way to increase crop productivity. With the rapid progression of functional
genomics, an increasing number of crop genomes have been sequenced and dozens of genes influencing key agronomic traits have been identified. However, current genome sequence information has not been adequately exploited for understanding
the complex characteristics of multiple gene, owing to a lack of crop phenotypic data. Efficient, automatic, and accurate technologies and platforms that can capture phenotypic data that can
be linked to genomics information for crop improvement at all growth stages have become as important as genotyping. Thus,
high-throughput phenotyping has become the major bottleneck restricting crop breeding. Plant phenomics has been defined as the high-throughput, accurate acquisition and analysis of multi-dimensional phenotypes
during crop growing stages at the organism level, including the cell, tissue, organ, individual plant, plot, and field levels. With the rapid development of novel sensors, imaging technology,
and analysis methods, numerous infrastructure platforms have been developed for phenotyping.
ESR spectroscopy in liquid food and beverages.pptx
With increasing population, people need to rely on packaged food stuffs. Packaging of food materials requires the preservation of food. There are various methods for the treatment of food to preserve them and irradiation treatment of food is one of them. It is the most common and the most harmless method for the food preservation as it does not alter the necessary micronutrients of food materials. Although irradiated food doesn’t cause any harm to the human health but still the quality assessment of food is required to provide consumers with necessary information about the food. ESR spectroscopy is the most sophisticated way to investigate the quality of the food and the free radicals induced during the processing of the food. ESR spin trapping technique is useful for the detection of highly unstable radicals in the food. The antioxidant capability of liquid food and beverages in mainly performed by spin trapping technique.
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- 1. Dr D K Upreti Assistant Professor- Physics Govt. PG College Ranikhet dkupreti17@gmail.com
- 2. Experiment : To draw characteristics of PN junction diode 1. Objectives 2. Introduction 3. Apparatus Used 4. Theory 5. About apparatus 6. Procedure 7. Observation 8. Result 9. Precaution and source of error
- 3. Objectives What are semiconductor device. Formation of PN junction diode. Characteristics of PN junction diode. Use of PN junction diode.
- 4. Introduction
- 7. Bonding of Si atoms A Covalent Bond Formed by the Sharing of Electrons in an Outer Energy Level
- 8. Si and Ge are tetravalent elements – each atom of Si (Ge) has 4 valence electrons in crystal matrix T=0 all electrons are bound in covalent bonds no carriers available for conduction. For T> 0 thermal fluctuations can break electrons free creating electron-hole pairs Both can move throughout the lattice and therefore conduct current. Electrons and Holes
- 10. Formation of P type Extrinsic semiconductor
- 11. Formation of N type Extrinsic semiconductor
- 13. REVIEW P-type and N-type P-type: A P-type material is one in which holes are majority carriers i.e. they are positively charged materials (++++) N-type: A N-type material is one in which electrons are majority charge carriers i.e. they are negatively charged materials (-----)
- 14. Apparatus Used P-N junction diode Milliammeter (measuring forward current) Microammeter (measuring forward current) Rheostat Voltmeter Battery Connection wires.
- 15. Theory Formation of P-N Junction diode
- 16. PN Junction trainer box
- 17. Forward bias
- 18. Reverse bias
- 19. Observation SN Forward Voltage (In V) Forward Current (In mA) Reverse Voltage (In V) Reverse Current (In µA) 1. 2. 3. 4. 5.
- 20. Observation (Forward bias) SN Forward Voltage (In V) Forward Current (In mA) S N Forward Voltage (In V) Forward Current (In mA) 1. 0.0 0.0 7 0.8 3.0 2. 0.2 0.0 8 1.0 5.0 3. 0.3 0.0 9 1.2 7.5 4. 0.4 0.5 10 1.4 10.0 5. 0.6 1.0 11 1.6 15.0 6 0.8 2.0 12 1.8 20.0
- 21. Observation (Reverse bias) SN Reverse Voltage (In V) Reverse Current (In µA) S N Reverse Voltage (In V) Reverse Current (In µA) 1. 0.0 1 7 14.0 7 2. 6.0 2 8 16.0 9 3. 8.0 3 9 18.0 10 4. 10.0 4 10 20.0 13 5. 12.0 5 11 22.0 25 6 0.8 2.0 12 1.8 20.0
- 22. Forward and Reverse characteristics of PN junction diode Draw the graph between voltage V and current I in graph paper for 1. Forward bias and 2. Reverse bias
- 23. I-V Characteristics of Practical Diode
- 24. Result The forward and reverse characteristics of PN junction diode is presented the graph.
- 25. Precaution and source of error 1. Sensitive voltmeter and sensitive ammeter should be used. 2. The direction about maximum plate voltage given by manufacturer should be strictly followed. 3. The graphs should drawn smoothly. 4. There should not be any fluctuation on the power. 5. To avoid over heating of PN junction, current should not passed for long time.
- 26. THANKING YOU