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Lecture 16:
CAMs,
ROMs,
PLAs
CMOS VLSI Design
CMOS VLSI Design 4th Ed.
20: CAMs, ROMs, and PLAs 2
Outline
 Content-Addressable Memories
 Read-Only Memories
 Programmable Logic Arrays
CMOS VLSI Design
CMOS VLSI Design 4th Ed.
20: CAMs, ROMs, and PLAs 3
CAMs
 Extension of ordinary memory (e.g. SRAM)
– Read and write memory as usual
– Also match to see which words contain a key
CAM
adr data/key
match
read
write
CMOS VLSI Design
CMOS VLSI Design 4th Ed.
20: CAMs, ROMs, and PLAs 4
10T CAM Cell
 Add four match transistors to 6T SRAM
– 56 x 43  unit cell
bit bit_b
word
match
cell
cell_b
CMOS VLSI Design
CMOS VLSI Design 4th Ed.
20: CAMs, ROMs, and PLAs 5
CAM Cell Operation
 Read and write like ordinary SRAM
 For matching:
– Leave wordline low
– Precharge matchlines
– Place key on bitlines
– Matchlines evaluate
 Miss line
– Pseudo-nMOS NOR of match lines
– Goes high if no words match
row
decoder
weak
miss
match0
match1
match2
match3
clk
column circuitry
CAM cell
address
data
read/write
CMOS VLSI Design
CMOS VLSI Design 4th Ed.
20: CAMs, ROMs, and PLAs 6
Read-Only Memories
 Read-Only Memories are nonvolatile
– Retain their contents when power is removed
 Mask-programmed ROMs use one transistor per bit
– Presence or absence determines 1 or 0
CMOS VLSI Design
CMOS VLSI Design 4th Ed.
20: CAMs, ROMs, and PLAs 7
ROM Example
 4-word x 6-bit ROM
– Represented with dot diagram
– Dots indicate 1’s in ROM
Word 0: 010101
Word 1: 011001
Word 2: 100101
Word 3: 101010
ROM Array
2:4
DEC
A0
A1
Y0
Y1
Y2
Y3
Y4
Y5
weak
pseudo-nMOS
pullups
Looks like 6 4-input pseudo-nMOS NORs
CMOS VLSI Design
CMOS VLSI Design 4th Ed.
20: CAMs, ROMs, and PLAs 8
ROM Array Layout
 Unit cell is 12 x 8  (about 1/10 size of SRAM)
Unit
Cell
CMOS VLSI Design
CMOS VLSI Design 4th Ed.
20: CAMs, ROMs, and PLAs 9
Row Decoders
 ROM row decoders must pitch-match with ROM
– Only a single track per word!
CMOS VLSI Design
CMOS VLSI Design 4th Ed.
20: CAMs, ROMs, and PLAs 10
Complete ROM Layout
CMOS VLSI Design
CMOS VLSI Design 4th Ed.
20: CAMs, ROMs, and PLAs 11
PROMs and EPROMs
 Programmable ROMs
– Build array with transistors at every site
– Burn out fuses to disable unwanted transistors
 Electrically Programmable ROMs
– Use floating gate to turn off unwanted transistors
– EPROM, EEPROM, Flash
n+
p
Gate
Source Drain
bulk Si
Thin Gate Oxide
(SiO2)
n+
Polysilicon
Floating Gate
CMOS VLSI Design
CMOS VLSI Design 4th Ed.
20: CAMs, ROMs, and PLAs 12
Flash Programming
 Charge on floating gate determines Vt
 Logic 1: negative Vt
 Logic 0: positive Vt
 Cells erased to 1 by applying a high body voltage so
that electrons tunnel off floating gate into substrate
 Programmed to 0 by applying high gate voltage
CMOS VLSI Design
CMOS VLSI Design 4th Ed.
20: CAMs, ROMs, and PLAs 13
NAND Flash
 High density, low cost / bit
– Programmed one page at a time
– Erased one block at a time
 Example:
– 4096-bit pages
– 16 pages / 8 KB block
– Many blocks / memory
CMOS VLSI Design
CMOS VLSI Design 4th Ed.
20: CAMs, ROMs, and PLAs 14
64 Gb NAND Flash
 64K cells / page
 4 bits / cell (multiple Vt)
 64 cells / string
– 256 pages / block
 2K blocks / plane
 2 planes
[Trinh09]
CMOS VLSI Design
CMOS VLSI Design 4th Ed.
20: CAMs, ROMs, and PLAs 15
Building Logic with ROMs
 Use ROM as lookup table containing truth table
– n inputs, k outputs requires 2n words x k bits
– Changing function is easy – reprogram ROM
 Finite State Machine
– n inputs, k outputs, s bits of state
– Build with 2n+s x (k+s) bit ROM and (k+s) bit reg
n
inputs
2
n
wordlines
ROM Array
k outputs
DEC
ROM
inputs outputs
state
n k
s
k
s
CMOS VLSI Design
CMOS VLSI Design 4th Ed.
20: CAMs, ROMs, and PLAs 16
Example: RoboAnt
Let’s build an Ant
Sensors: Antennae
(L,R) – 1 when in contact
Actuators: Legs
Forward step F
Ten degree turns TL, TR
Goal: make our ant smart enough to
get out of a maze
Strategy: keep right antenna on wall
(RoboAnt adapted from MIT 6.004 2002 OpenCourseWare by Ward and Terman)
L R
CMOS VLSI Design
CMOS VLSI Design 4th Ed.
20: CAMs, ROMs, and PLAs 17
Lost in space
 Action: go forward until we hit something
– Initial state
CMOS VLSI Design
CMOS VLSI Design 4th Ed.
20: CAMs, ROMs, and PLAs 18
Bonk!!!
 Action: turn left (rotate counterclockwise)
– Until we don’t touch anymore
CMOS VLSI Design
CMOS VLSI Design 4th Ed.
20: CAMs, ROMs, and PLAs 19
A little to the right
 Action: step forward and turn right a little
– Looking for wall
CMOS VLSI Design
CMOS VLSI Design 4th Ed.
20: CAMs, ROMs, and PLAs 20
Then a little to the left
 Action: step and turn left a little, until not touching
CMOS VLSI Design
CMOS VLSI Design 4th Ed.
20: CAMs, ROMs, and PLAs 21
Whoops – a corner!
 Action: step and turn right until hitting next wall
CMOS VLSI Design
CMOS VLSI Design 4th Ed.
20: CAMs, ROMs, and PLAs 22
Simplification
 Merge equivalent states where possible
CMOS VLSI Design
CMOS VLSI Design 4th Ed.
20: CAMs, ROMs, and PLAs 23
State Transition Table
S1:0 L R S1:0’ TR TL F
00 0 0 00 0 0 1
00 1 X 01 0 0 1
00 0 1 01 0 0 1
01 1 X 01 0 1 0
01 0 1 01 0 1 0
01 0 0 10 0 1 0
10 X 0 10 1 0 1
10 X 1 11 1 0 1
11 1 X 01 0 1 1
11 0 0 10 0 1 1
11 0 1 11 0 1 1
Lost
RCCW
Wall1
Wall2
CMOS VLSI Design
CMOS VLSI Design 4th Ed.
20: CAMs, ROMs, and PLAs 24
ROM Implementation
 16-word x 5 bit ROM
ROM
L, R
S1:0
TL, TR, F
S'1:0
S1
' S0
' TR'TL' F'
0000
0001
0010
0011
0100
0101
0110
0111
1000
1001
1010
1011
1100
1101
1110
1111
4:16
DEC
S1 S0 L R
CMOS VLSI Design
CMOS VLSI Design 4th Ed.
20: CAMs, ROMs, and PLAs 25
ROM Implementation
 16-word x 5 bit ROM
ROM
L, R
S1:0
TL, TR, F
S'1:0
S1
' S0
' TR'TL' F'
0000
0001
0010
0011
0100
0101
0110
0111
1000
1001
1010
1011
1100
1101
1110
1111
4:16
DEC
S1 S0 L R
CMOS VLSI Design
CMOS VLSI Design 4th Ed.
20: CAMs, ROMs, and PLAs 26
PLAs
 A Programmable Logic Array performs any function
in sum-of-products form.
 Literals: inputs & complements
 Products / Minterms: AND of literals
 Outputs: OR of Minterms
 Example: Full Adder
out
s abc abc abc abc
c ab bc ac
   
  
AND Plane OR Plane
abc
abc
abc
abc
ab
bc
ac
s
a b c out
c
Minterms
Inputs Outputs
CMOS VLSI Design
CMOS VLSI Design 4th Ed.
20: CAMs, ROMs, and PLAs 27
NOR-NOR PLAs
 ANDs and ORs are not very efficient in CMOS
 Dynamic or Pseudo-nMOS NORs are very efficient
 Use DeMorgan’s Law to convert to all NORs
AND Plane OR Plane
abc
abc
abc
abc
ab
bc
ac
s
a b c
out
c
AND Plane OR Plane
abc
abc
abc
abc
ab
bc
ac
s
a b c
out
c
CMOS VLSI Design
CMOS VLSI Design 4th Ed.
20: CAMs, ROMs, and PLAs 28
PLA Schematic & Layout
AND Plane OR Plane
abc
abc
abc
abc
ab
bc
ac
s
a b c
out
c
CMOS VLSI Design
CMOS VLSI Design 4th Ed.
20: CAMs, ROMs, and PLAs 29
PLAs vs. ROMs
 The OR plane of the PLA is like the ROM array
 The AND plane of the PLA is like the ROM decoder
 PLAs are more flexible than ROMs
– No need to have 2n rows for n inputs
– Only generate the minterms that are needed
– Take advantage of logic simplification
CMOS VLSI Design
CMOS VLSI Design 4th Ed.
20: CAMs, ROMs, and PLAs 30
Example: RoboAnt PLA
 Convert state transition table to logic equations
S1:0 L R S1:0’ TR TL F
00 0 0 00 0 0 1
00 1 X 01 0 0 1
00 0 1 01 0 0 1
01 1 X 01 0 1 0
01 0 1 01 0 1 0
01 0 0 10 0 1 0
10 X 0 10 1 0 1
10 X 1 11 1 0 1
11 1 X 01 0 1 1
11 0 0 10 0 1 1
11 0 1 11 0 1 1
1 0
0
1 0
TR S S
TL S
F S S


 
CMOS VLSI Design
CMOS VLSI Design 4th Ed.
20: CAMs, ROMs, and PLAs 31
AND Plane OR Plane
1 0
S S
1
LS
0
LRS
R
1
LS
0
S
0
LS
1 '
S
1
S 0
S L
0 '
S TR TL F
R
1
S
0
S
RoboAnt Dot Diagram
AND Plane OR Plane
1 0
S S
1
LS
0
LRS
R
1
LS
0
S
0
LS
1 '
S
1
S 0
S L
0 '
S TR TL F
R
1
S
0
S
1 0 1 0
1 0
1 0
0
1 0
1'
0'
S S S LS LRS
S R LS LS
TR S S
TL S
F S S
  
  


 

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lecture 16-CAMs,ROMs,PLAs and other detail of memory

  • 2. CMOS VLSI Design CMOS VLSI Design 4th Ed. 20: CAMs, ROMs, and PLAs 2 Outline  Content-Addressable Memories  Read-Only Memories  Programmable Logic Arrays
  • 3. CMOS VLSI Design CMOS VLSI Design 4th Ed. 20: CAMs, ROMs, and PLAs 3 CAMs  Extension of ordinary memory (e.g. SRAM) – Read and write memory as usual – Also match to see which words contain a key CAM adr data/key match read write
  • 4. CMOS VLSI Design CMOS VLSI Design 4th Ed. 20: CAMs, ROMs, and PLAs 4 10T CAM Cell  Add four match transistors to 6T SRAM – 56 x 43  unit cell bit bit_b word match cell cell_b
  • 5. CMOS VLSI Design CMOS VLSI Design 4th Ed. 20: CAMs, ROMs, and PLAs 5 CAM Cell Operation  Read and write like ordinary SRAM  For matching: – Leave wordline low – Precharge matchlines – Place key on bitlines – Matchlines evaluate  Miss line – Pseudo-nMOS NOR of match lines – Goes high if no words match row decoder weak miss match0 match1 match2 match3 clk column circuitry CAM cell address data read/write
  • 6. CMOS VLSI Design CMOS VLSI Design 4th Ed. 20: CAMs, ROMs, and PLAs 6 Read-Only Memories  Read-Only Memories are nonvolatile – Retain their contents when power is removed  Mask-programmed ROMs use one transistor per bit – Presence or absence determines 1 or 0
  • 7. CMOS VLSI Design CMOS VLSI Design 4th Ed. 20: CAMs, ROMs, and PLAs 7 ROM Example  4-word x 6-bit ROM – Represented with dot diagram – Dots indicate 1’s in ROM Word 0: 010101 Word 1: 011001 Word 2: 100101 Word 3: 101010 ROM Array 2:4 DEC A0 A1 Y0 Y1 Y2 Y3 Y4 Y5 weak pseudo-nMOS pullups Looks like 6 4-input pseudo-nMOS NORs
  • 8. CMOS VLSI Design CMOS VLSI Design 4th Ed. 20: CAMs, ROMs, and PLAs 8 ROM Array Layout  Unit cell is 12 x 8  (about 1/10 size of SRAM) Unit Cell
  • 9. CMOS VLSI Design CMOS VLSI Design 4th Ed. 20: CAMs, ROMs, and PLAs 9 Row Decoders  ROM row decoders must pitch-match with ROM – Only a single track per word!
  • 10. CMOS VLSI Design CMOS VLSI Design 4th Ed. 20: CAMs, ROMs, and PLAs 10 Complete ROM Layout
  • 11. CMOS VLSI Design CMOS VLSI Design 4th Ed. 20: CAMs, ROMs, and PLAs 11 PROMs and EPROMs  Programmable ROMs – Build array with transistors at every site – Burn out fuses to disable unwanted transistors  Electrically Programmable ROMs – Use floating gate to turn off unwanted transistors – EPROM, EEPROM, Flash n+ p Gate Source Drain bulk Si Thin Gate Oxide (SiO2) n+ Polysilicon Floating Gate
  • 12. CMOS VLSI Design CMOS VLSI Design 4th Ed. 20: CAMs, ROMs, and PLAs 12 Flash Programming  Charge on floating gate determines Vt  Logic 1: negative Vt  Logic 0: positive Vt  Cells erased to 1 by applying a high body voltage so that electrons tunnel off floating gate into substrate  Programmed to 0 by applying high gate voltage
  • 13. CMOS VLSI Design CMOS VLSI Design 4th Ed. 20: CAMs, ROMs, and PLAs 13 NAND Flash  High density, low cost / bit – Programmed one page at a time – Erased one block at a time  Example: – 4096-bit pages – 16 pages / 8 KB block – Many blocks / memory
  • 14. CMOS VLSI Design CMOS VLSI Design 4th Ed. 20: CAMs, ROMs, and PLAs 14 64 Gb NAND Flash  64K cells / page  4 bits / cell (multiple Vt)  64 cells / string – 256 pages / block  2K blocks / plane  2 planes [Trinh09]
  • 15. CMOS VLSI Design CMOS VLSI Design 4th Ed. 20: CAMs, ROMs, and PLAs 15 Building Logic with ROMs  Use ROM as lookup table containing truth table – n inputs, k outputs requires 2n words x k bits – Changing function is easy – reprogram ROM  Finite State Machine – n inputs, k outputs, s bits of state – Build with 2n+s x (k+s) bit ROM and (k+s) bit reg n inputs 2 n wordlines ROM Array k outputs DEC ROM inputs outputs state n k s k s
  • 16. CMOS VLSI Design CMOS VLSI Design 4th Ed. 20: CAMs, ROMs, and PLAs 16 Example: RoboAnt Let’s build an Ant Sensors: Antennae (L,R) – 1 when in contact Actuators: Legs Forward step F Ten degree turns TL, TR Goal: make our ant smart enough to get out of a maze Strategy: keep right antenna on wall (RoboAnt adapted from MIT 6.004 2002 OpenCourseWare by Ward and Terman) L R
  • 17. CMOS VLSI Design CMOS VLSI Design 4th Ed. 20: CAMs, ROMs, and PLAs 17 Lost in space  Action: go forward until we hit something – Initial state
  • 18. CMOS VLSI Design CMOS VLSI Design 4th Ed. 20: CAMs, ROMs, and PLAs 18 Bonk!!!  Action: turn left (rotate counterclockwise) – Until we don’t touch anymore
  • 19. CMOS VLSI Design CMOS VLSI Design 4th Ed. 20: CAMs, ROMs, and PLAs 19 A little to the right  Action: step forward and turn right a little – Looking for wall
  • 20. CMOS VLSI Design CMOS VLSI Design 4th Ed. 20: CAMs, ROMs, and PLAs 20 Then a little to the left  Action: step and turn left a little, until not touching
  • 21. CMOS VLSI Design CMOS VLSI Design 4th Ed. 20: CAMs, ROMs, and PLAs 21 Whoops – a corner!  Action: step and turn right until hitting next wall
  • 22. CMOS VLSI Design CMOS VLSI Design 4th Ed. 20: CAMs, ROMs, and PLAs 22 Simplification  Merge equivalent states where possible
  • 23. CMOS VLSI Design CMOS VLSI Design 4th Ed. 20: CAMs, ROMs, and PLAs 23 State Transition Table S1:0 L R S1:0’ TR TL F 00 0 0 00 0 0 1 00 1 X 01 0 0 1 00 0 1 01 0 0 1 01 1 X 01 0 1 0 01 0 1 01 0 1 0 01 0 0 10 0 1 0 10 X 0 10 1 0 1 10 X 1 11 1 0 1 11 1 X 01 0 1 1 11 0 0 10 0 1 1 11 0 1 11 0 1 1 Lost RCCW Wall1 Wall2
  • 24. CMOS VLSI Design CMOS VLSI Design 4th Ed. 20: CAMs, ROMs, and PLAs 24 ROM Implementation  16-word x 5 bit ROM ROM L, R S1:0 TL, TR, F S'1:0 S1 ' S0 ' TR'TL' F' 0000 0001 0010 0011 0100 0101 0110 0111 1000 1001 1010 1011 1100 1101 1110 1111 4:16 DEC S1 S0 L R
  • 25. CMOS VLSI Design CMOS VLSI Design 4th Ed. 20: CAMs, ROMs, and PLAs 25 ROM Implementation  16-word x 5 bit ROM ROM L, R S1:0 TL, TR, F S'1:0 S1 ' S0 ' TR'TL' F' 0000 0001 0010 0011 0100 0101 0110 0111 1000 1001 1010 1011 1100 1101 1110 1111 4:16 DEC S1 S0 L R
  • 26. CMOS VLSI Design CMOS VLSI Design 4th Ed. 20: CAMs, ROMs, and PLAs 26 PLAs  A Programmable Logic Array performs any function in sum-of-products form.  Literals: inputs & complements  Products / Minterms: AND of literals  Outputs: OR of Minterms  Example: Full Adder out s abc abc abc abc c ab bc ac        AND Plane OR Plane abc abc abc abc ab bc ac s a b c out c Minterms Inputs Outputs
  • 27. CMOS VLSI Design CMOS VLSI Design 4th Ed. 20: CAMs, ROMs, and PLAs 27 NOR-NOR PLAs  ANDs and ORs are not very efficient in CMOS  Dynamic or Pseudo-nMOS NORs are very efficient  Use DeMorgan’s Law to convert to all NORs AND Plane OR Plane abc abc abc abc ab bc ac s a b c out c AND Plane OR Plane abc abc abc abc ab bc ac s a b c out c
  • 28. CMOS VLSI Design CMOS VLSI Design 4th Ed. 20: CAMs, ROMs, and PLAs 28 PLA Schematic & Layout AND Plane OR Plane abc abc abc abc ab bc ac s a b c out c
  • 29. CMOS VLSI Design CMOS VLSI Design 4th Ed. 20: CAMs, ROMs, and PLAs 29 PLAs vs. ROMs  The OR plane of the PLA is like the ROM array  The AND plane of the PLA is like the ROM decoder  PLAs are more flexible than ROMs – No need to have 2n rows for n inputs – Only generate the minterms that are needed – Take advantage of logic simplification
  • 30. CMOS VLSI Design CMOS VLSI Design 4th Ed. 20: CAMs, ROMs, and PLAs 30 Example: RoboAnt PLA  Convert state transition table to logic equations S1:0 L R S1:0’ TR TL F 00 0 0 00 0 0 1 00 1 X 01 0 0 1 00 0 1 01 0 0 1 01 1 X 01 0 1 0 01 0 1 01 0 1 0 01 0 0 10 0 1 0 10 X 0 10 1 0 1 10 X 1 11 1 0 1 11 1 X 01 0 1 1 11 0 0 10 0 1 1 11 0 1 11 0 1 1 1 0 0 1 0 TR S S TL S F S S    
  • 31. CMOS VLSI Design CMOS VLSI Design 4th Ed. 20: CAMs, ROMs, and PLAs 31 AND Plane OR Plane 1 0 S S 1 LS 0 LRS R 1 LS 0 S 0 LS 1 ' S 1 S 0 S L 0 ' S TR TL F R 1 S 0 S RoboAnt Dot Diagram AND Plane OR Plane 1 0 S S 1 LS 0 LRS R 1 LS 0 S 0 LS 1 ' S 1 S 0 S L 0 ' S TR TL F R 1 S 0 S 1 0 1 0 1 0 1 0 0 1 0 1' 0' S S S LS LRS S R LS LS TR S S TL S F S S          