Bu sunum; Gazi Üniversitesi İleri Teknolojiler ABD, Prof.Dr. İbrahim USLU' nun sorumluluğunda olan" İnce Film Teknolojileri" adlı derste sunmuş olduğum ince film kaplama tekniklerinden birisi olan Kimyasal Buhar Biriktirme (CVD) tekniğini detaylı bir şekilde anlatılmaktadır.
The document discusses chemical vapor deposition (CVD) and was presented by a team of 4 students. CVD involves depositing a solid film on a substrate through chemical reactions of vapor phase precursors. The major sections describe the CVD apparatus, process, types including atmospheric pressure CVD, low pressure CVD and plasma enhanced CVD. The applications of CVD include coatings, semiconductor devices, optical fibers and composites. Advantages are high growth rates, versatility in deposited materials and purity. Disadvantages include high temperatures and complex toxic processes.
If you have any questions, contact me. I would be happy to help.
PLEASE LIKE IT AND GIVE COMMENT
In this presentation,
The author gives the working principle of the PVD and Sputtering methods. But you can also find an information about the thin film and plasma phase of a matter.
Also this is related with Magnetron Sputtering method.
Hot wall reactor is a high temperature chamber in which the substrate is placed for coating. In this reactor including the substrate, all other parts (inlet and outlet tubes) inside the chamber get coated.
A key vacuum deposition technique for making highly homogenous and high-performance solid-state thin films and materials is Chemical vapor deposition. The types of CVD systems and their key applications would also be discussed in this presentation. It is a key bottom-up processing technique, widely used in graphene fabrication, also the fabrication of various oxides, nitrides is possible, with this technique.
The desired to reach higher efficiencies, lower specific fuel consumption and reduced emission in modern engines has becomes the primary focus of engine researches and manufactures over the past three decades. Ceramic coating is a solution to such problem as they provide good thermal barrier properties for designers. In the design of adiabatic engines, reducing in cylinder heat rejection requires very special thermal barrier coatings on the engine combustion chamber. Partial Thermal barrier coatings (TBC) on the top surface of the piston is considered as a solution for reduction of unburned Hydrocarbon (HC) emission produce by incomplete combustion with respect to crevice volume when engines start. The TBC on the top piston surface decreases the thermal conductivity and increases the unburned charged oxidation, so that the metallic substrates will be exposed to lower peak temperature thereby reducing the thermal stress in engines components. Also thermal barrier coatings on other elements of combustion chamber of internal combustion engine offer advantages including fuel efficiency, multi fuel capacity and high power density. Therefore, thermal barrier coating (TBC) technology is successfully applied to the internal combustion engines, in particular to the combustion chamber.
Laser Processing of Different materials and its application.aman1312
Presentation of laser application in different types of industry for material processing. Laser materials processing is done on various materials such as metals, non metals, ceramics, polymer materials.
The document discusses chemical vapor deposition (CVD) and was presented by a team of 4 students. CVD involves depositing a solid film on a substrate through chemical reactions of vapor phase precursors. The major sections describe the CVD apparatus, process, types including atmospheric pressure CVD, low pressure CVD and plasma enhanced CVD. The applications of CVD include coatings, semiconductor devices, optical fibers and composites. Advantages are high growth rates, versatility in deposited materials and purity. Disadvantages include high temperatures and complex toxic processes.
If you have any questions, contact me. I would be happy to help.
PLEASE LIKE IT AND GIVE COMMENT
In this presentation,
The author gives the working principle of the PVD and Sputtering methods. But you can also find an information about the thin film and plasma phase of a matter.
Also this is related with Magnetron Sputtering method.
Hot wall reactor is a high temperature chamber in which the substrate is placed for coating. In this reactor including the substrate, all other parts (inlet and outlet tubes) inside the chamber get coated.
A key vacuum deposition technique for making highly homogenous and high-performance solid-state thin films and materials is Chemical vapor deposition. The types of CVD systems and their key applications would also be discussed in this presentation. It is a key bottom-up processing technique, widely used in graphene fabrication, also the fabrication of various oxides, nitrides is possible, with this technique.
The desired to reach higher efficiencies, lower specific fuel consumption and reduced emission in modern engines has becomes the primary focus of engine researches and manufactures over the past three decades. Ceramic coating is a solution to such problem as they provide good thermal barrier properties for designers. In the design of adiabatic engines, reducing in cylinder heat rejection requires very special thermal barrier coatings on the engine combustion chamber. Partial Thermal barrier coatings (TBC) on the top surface of the piston is considered as a solution for reduction of unburned Hydrocarbon (HC) emission produce by incomplete combustion with respect to crevice volume when engines start. The TBC on the top piston surface decreases the thermal conductivity and increases the unburned charged oxidation, so that the metallic substrates will be exposed to lower peak temperature thereby reducing the thermal stress in engines components. Also thermal barrier coatings on other elements of combustion chamber of internal combustion engine offer advantages including fuel efficiency, multi fuel capacity and high power density. Therefore, thermal barrier coating (TBC) technology is successfully applied to the internal combustion engines, in particular to the combustion chamber.
Laser Processing of Different materials and its application.aman1312
Presentation of laser application in different types of industry for material processing. Laser materials processing is done on various materials such as metals, non metals, ceramics, polymer materials.
Physical vapor deposition (PVD) involves evaporating or sputtering material from a source to deposit thin films on a substrate in a vacuum chamber. In evaporation, a thermal source heats material which travels in straight lines to the substrate. Sputtering uses plasma to bombard a target, ejecting atoms which deposit with better step coverage. Both techniques can deposit a wide range of materials but sputtering provides better step coverage and evaporation risks contamination.
The document discusses various lithography techniques. It begins with an introduction and overview of lithography and its history. It then describes several types of lithography techniques such as electron beam lithography, ion beam lithography, x-ray lithography, and nanoimprint lithography. The document also outlines the typical steps used in lithography processes. Finally, it provides more details on several emerging lithography techniques such as beam pen lithography, nanomotor lithography, coaxial lithography, and oxygen inhibition lithography.
This document discusses the micro-structure of welding, including the fusion zone, partially melted zone, and heat affected zone. It describes the changes that occur in these zones due to the welding process, including re-melting and solidification in the fusion zone, localized melting at grain boundaries in the partially melted zone, and solid-state metallurgical reactions like recrystallization and grain growth in the heat affected zone. It also discusses how welding parameters like heat input, welding speed, and electrode diameter affect the micro-structure and properties of the different zones.
Edge dislocations occur in crystals when an extra half plane of atoms is present, causing a mismatch. There are two types: positive edge dislocations where the extra half plane is above the slip plane, and negative where it is below. The Burgers vector defines a dislocation by its magnitude and direction, representing the lattice distortion. It can be determined using a Burgers circuit around the dislocation line. Edge dislocations allow slip and ductility in metals, while also influencing their mechanical, electronic, and optical properties.
Nitriding and carbonitriding are heat treatment processes that diffuse nitrogen into the surface of a metal to harden it. Carbonitriding additionally incorporates carbon to create a harder case. Both processes increase wear resistance, fatigue life, and surface hardness, while reducing distortion compared to other hardening methods. They are commonly used to treat aircraft, automotive, tool, and industrial parts.
Chemical vapor deposition (CVD) is a process used to produce high-purity solid materials through chemical reactions of vapor phase precursors on a substrate. Key steps include transport of reactants to the substrate surface, adsorption and decomposition reactions, and removal of byproducts. CVD processes are classified based on operating pressure and can be used to deposit a variety of materials through control of temperature, precursor gases, and other parameters.
Effect Of CaO, FeO, MgO, SiO2 and Al2O3 Content of Slag on Dephosphorization ...karun19
Phosphorus has atomic number 15 and it can give up all 5 electrons from its outermost shell to become P5+ or accept 3 electrons to become P3- to attain stable configuration.
This means that phosphorus can be removed both under oxidizing as well as reducing conditions.
But removal of phosphorus under reducing conditions is not practical since its removal is highly hazardous.
Thus P removal is practised mostly under oxidizing conditions(i.e. in Basic Oxygen Furnace).
Pre-treatment of hot metal involves removing silicon, phosphorus, and sulfur to produce high quality steel. It is done between the blast furnace and basic oxygen furnace. Desiliconization removes excess silicon using oxidizing agents and fluxes to produce a neutral slag. Dephosphorization requires oxidizing conditions and a basic slag to remove phosphorus after silicon removal. Desulphurization uses reagents like lime, calcium carbide, and magnesium injected through lances to convert sulfur to slag. Dip lance injection is a reliable method to reduce sulfur levels to 0.001%. Proper removal of sulfur-rich slag and refractory development are areas of ongoing work.
This document provides an overview of functionally graded materials (FGMs). It discusses that FGMs are materials that have a gradual, continuous change in composition and properties across their volume, as seen in nature. The document outlines the history of FGMs, introduces their characteristics including continuous property variation, and describes various processing methods used to manufacture them like powder metallurgy and deposition techniques. Finally, the document discusses applications of FGMs in fields like aerospace, electronics, and biomedicine and notes challenges in developing FGM models and reducing costs.
Graphene oxide is synthesized by treating graphite with strong oxidizing agents like potassium chlorate, potassium permanganate, and acids. It has a layered structure with oxygen-containing functional groups such as hydroxyl and epoxy groups bonded to the basal graphene planes. These functional groups make graphene oxide hydrophilic and soluble in water. Graphene oxide can be chemically reduced by removing oxygen groups or chemically functionalized by reacting functional groups on the basal planes with other molecules through covalent bonding.
This document discusses two approaches to describing the mechanical behavior of grain boundaries: the continuous Frank-Bilby approach and the discrete Read-Shockley approach. It focuses on the discrete approach, explaining Bollmann's model of intrinsic dislocations that form periodic networks at grain boundaries according to the misorientation angle between crystals. Primary intrinsic dislocations account for the deviation from a single crystal structure and have Burgers vectors of the crystal lattice. Their spacing decreases with increasing misorientation angle according to the Read-Shockley formula. Examples are provided for low-angle tilt and twist grain boundaries.
Graphene is a one-atom thick sheet of carbon atoms arranged in a honeycomb lattice structure. It is the thinnest material possible and is very strong and flexible. In 2004, Geim and Novoselov discovered graphene by peeling layers of graphite with Scotch tape. Graphene has excellent electrical and thermal conductivity and is transparent, making it promising for applications like batteries, touchscreens, solar cells, LEDs, and ultracapacitors.
Chemical vapor deposition and its types 120589Adnan Majeed
Chemical vapor deposition (CVD) is a process used to produce high-purity solid materials through a chemical reaction of volatile precursors in a chamber. In a typical CVD process, precursors are introduced into the chamber and react on a heated substrate to form a deposit. CVD allows for precise control over deposition and produces highly uniform, dense thin films. It has various applications including coatings, semiconductor devices, and optical fibers.
This document provides an overview of thin film deposition methods and thin film characterization techniques. It discusses the objectives of the course, which are to provide an understanding of thin film deposition methods, their capabilities and limitations. Hands-on demonstrations and experiments will help participants understand each deposition method and stimulate discussion. The document then summarizes various thin film deposition techniques like evaporation, sputtering, chemical vapor deposition, their principles and examples of applications. It also summarizes various characterization techniques used to analyze thin films and determine properties like composition, structure, thickness and defects.
Chemical Vaour Deposition & Physical Vapour Deposition techniques.Tapan Patel
This document provides an overview of chemical vapor deposition (CVD) and physical vapor deposition (PVD) processes. CVD involves reacting vapor phase chemicals in a reaction chamber to form a thin solid film on a substrate. Key steps in the CVD process include transporting reactants, adsorption on the substrate surface, and desorption of byproducts. PVD involves vaporizing a solid material using techniques like evaporation, sputtering, or pulsed laser deposition under vacuum conditions. The vaporized material then condenses as a thin film on the substrate. The document compares advantages and applications of the two deposition methods.
Chemical vapor deposition (CVD) involves depositing a solid material onto a substrate through chemical reactions of vapor phase precursors. CVD systems include precursor supply, heated reactors to decompose precursors, and effluent gas handling. During CVD, precursors are transported to the substrate surface through diffusion and convection, react on the surface, and deposit the solid material as a thin film as gaseous byproducts desorb. CVD is used to deposit a variety of materials and has applications in semiconductors, coatings, and fiber optics.
Physical vapor deposition (PVD) involves evaporating or sputtering material from a source to deposit thin films on a substrate in a vacuum chamber. In evaporation, a thermal source heats material which travels in straight lines to the substrate. Sputtering uses plasma to bombard a target, ejecting atoms which deposit with better step coverage. Both techniques can deposit a wide range of materials but sputtering provides better step coverage and evaporation risks contamination.
The document discusses various lithography techniques. It begins with an introduction and overview of lithography and its history. It then describes several types of lithography techniques such as electron beam lithography, ion beam lithography, x-ray lithography, and nanoimprint lithography. The document also outlines the typical steps used in lithography processes. Finally, it provides more details on several emerging lithography techniques such as beam pen lithography, nanomotor lithography, coaxial lithography, and oxygen inhibition lithography.
This document discusses the micro-structure of welding, including the fusion zone, partially melted zone, and heat affected zone. It describes the changes that occur in these zones due to the welding process, including re-melting and solidification in the fusion zone, localized melting at grain boundaries in the partially melted zone, and solid-state metallurgical reactions like recrystallization and grain growth in the heat affected zone. It also discusses how welding parameters like heat input, welding speed, and electrode diameter affect the micro-structure and properties of the different zones.
Edge dislocations occur in crystals when an extra half plane of atoms is present, causing a mismatch. There are two types: positive edge dislocations where the extra half plane is above the slip plane, and negative where it is below. The Burgers vector defines a dislocation by its magnitude and direction, representing the lattice distortion. It can be determined using a Burgers circuit around the dislocation line. Edge dislocations allow slip and ductility in metals, while also influencing their mechanical, electronic, and optical properties.
Nitriding and carbonitriding are heat treatment processes that diffuse nitrogen into the surface of a metal to harden it. Carbonitriding additionally incorporates carbon to create a harder case. Both processes increase wear resistance, fatigue life, and surface hardness, while reducing distortion compared to other hardening methods. They are commonly used to treat aircraft, automotive, tool, and industrial parts.
Chemical vapor deposition (CVD) is a process used to produce high-purity solid materials through chemical reactions of vapor phase precursors on a substrate. Key steps include transport of reactants to the substrate surface, adsorption and decomposition reactions, and removal of byproducts. CVD processes are classified based on operating pressure and can be used to deposit a variety of materials through control of temperature, precursor gases, and other parameters.
Effect Of CaO, FeO, MgO, SiO2 and Al2O3 Content of Slag on Dephosphorization ...karun19
Phosphorus has atomic number 15 and it can give up all 5 electrons from its outermost shell to become P5+ or accept 3 electrons to become P3- to attain stable configuration.
This means that phosphorus can be removed both under oxidizing as well as reducing conditions.
But removal of phosphorus under reducing conditions is not practical since its removal is highly hazardous.
Thus P removal is practised mostly under oxidizing conditions(i.e. in Basic Oxygen Furnace).
Pre-treatment of hot metal involves removing silicon, phosphorus, and sulfur to produce high quality steel. It is done between the blast furnace and basic oxygen furnace. Desiliconization removes excess silicon using oxidizing agents and fluxes to produce a neutral slag. Dephosphorization requires oxidizing conditions and a basic slag to remove phosphorus after silicon removal. Desulphurization uses reagents like lime, calcium carbide, and magnesium injected through lances to convert sulfur to slag. Dip lance injection is a reliable method to reduce sulfur levels to 0.001%. Proper removal of sulfur-rich slag and refractory development are areas of ongoing work.
This document provides an overview of functionally graded materials (FGMs). It discusses that FGMs are materials that have a gradual, continuous change in composition and properties across their volume, as seen in nature. The document outlines the history of FGMs, introduces their characteristics including continuous property variation, and describes various processing methods used to manufacture them like powder metallurgy and deposition techniques. Finally, the document discusses applications of FGMs in fields like aerospace, electronics, and biomedicine and notes challenges in developing FGM models and reducing costs.
Graphene oxide is synthesized by treating graphite with strong oxidizing agents like potassium chlorate, potassium permanganate, and acids. It has a layered structure with oxygen-containing functional groups such as hydroxyl and epoxy groups bonded to the basal graphene planes. These functional groups make graphene oxide hydrophilic and soluble in water. Graphene oxide can be chemically reduced by removing oxygen groups or chemically functionalized by reacting functional groups on the basal planes with other molecules through covalent bonding.
This document discusses two approaches to describing the mechanical behavior of grain boundaries: the continuous Frank-Bilby approach and the discrete Read-Shockley approach. It focuses on the discrete approach, explaining Bollmann's model of intrinsic dislocations that form periodic networks at grain boundaries according to the misorientation angle between crystals. Primary intrinsic dislocations account for the deviation from a single crystal structure and have Burgers vectors of the crystal lattice. Their spacing decreases with increasing misorientation angle according to the Read-Shockley formula. Examples are provided for low-angle tilt and twist grain boundaries.
Graphene is a one-atom thick sheet of carbon atoms arranged in a honeycomb lattice structure. It is the thinnest material possible and is very strong and flexible. In 2004, Geim and Novoselov discovered graphene by peeling layers of graphite with Scotch tape. Graphene has excellent electrical and thermal conductivity and is transparent, making it promising for applications like batteries, touchscreens, solar cells, LEDs, and ultracapacitors.
Chemical vapor deposition and its types 120589Adnan Majeed
Chemical vapor deposition (CVD) is a process used to produce high-purity solid materials through a chemical reaction of volatile precursors in a chamber. In a typical CVD process, precursors are introduced into the chamber and react on a heated substrate to form a deposit. CVD allows for precise control over deposition and produces highly uniform, dense thin films. It has various applications including coatings, semiconductor devices, and optical fibers.
This document provides an overview of thin film deposition methods and thin film characterization techniques. It discusses the objectives of the course, which are to provide an understanding of thin film deposition methods, their capabilities and limitations. Hands-on demonstrations and experiments will help participants understand each deposition method and stimulate discussion. The document then summarizes various thin film deposition techniques like evaporation, sputtering, chemical vapor deposition, their principles and examples of applications. It also summarizes various characterization techniques used to analyze thin films and determine properties like composition, structure, thickness and defects.
Chemical Vaour Deposition & Physical Vapour Deposition techniques.Tapan Patel
This document provides an overview of chemical vapor deposition (CVD) and physical vapor deposition (PVD) processes. CVD involves reacting vapor phase chemicals in a reaction chamber to form a thin solid film on a substrate. Key steps in the CVD process include transporting reactants, adsorption on the substrate surface, and desorption of byproducts. PVD involves vaporizing a solid material using techniques like evaporation, sputtering, or pulsed laser deposition under vacuum conditions. The vaporized material then condenses as a thin film on the substrate. The document compares advantages and applications of the two deposition methods.
Chemical vapor deposition (CVD) involves depositing a solid material onto a substrate through chemical reactions of vapor phase precursors. CVD systems include precursor supply, heated reactors to decompose precursors, and effluent gas handling. During CVD, precursors are transported to the substrate surface through diffusion and convection, react on the surface, and deposit the solid material as a thin film as gaseous byproducts desorb. CVD is used to deposit a variety of materials and has applications in semiconductors, coatings, and fiber optics.
1. Kimyasal Buhar Biriktirme
Zümrüt VAROL
(CVD)
Zümrüt VAROL
Gazi Üniversitesi
Fen Bilimleri Enstitüsü
İleri Teknolojiler ABD
2. Zümrüt VAROL
Anlatacaklarım
• Tanım
• Yöntem
• CVD Çalışma Mekanizması
• CVD Reaksiyon Türleri
• CVD Kaynak ve Malzeme Özellikleri
• CVD Türleri
• CVD Reaktör Türleri
• CVD Cihazı ekipmanları
• Prof. Dr. İbrahim Uslu’nun Doktora Tezi
• CVD Avantaj ve Dezavantajları
• CVD Uygulama Alanları
• Kaynaklar
3. Zümrüt VAROL
Kimyasal Buhar Biriktirme
(CVD)
• Ortalama kapalı bir kap içinde ısıtılmış malzeme yüzeyinin
buhar halindeki bir taşıyıcı gazın kimyasal reaksiyonu
sonucu oluşan katı bir malzeme ile kaplanması kimyasal
buhar biriktirme (Chemical Vapour Deposition, CVD)
yöntemi olarak tanımlanır.
4. Zümrüt VAROL
Yöntem
• CVD yöntemi; buhar fazından ve basıncı istenilen değerlere
ayarlanmış bir ortamda kimyasal yöntemle katı kaplama
malzemesi üretmeyi temel alır.
5. Zümrüt VAROL
• Kaplama kalınlığı 10 μm den daha incedir.
• Kaplama sıcaklığı, yapılan kaplamanın türüne bağlıdır ve
genellikle 500-1100 °C arasındadır.
• İşlem süresi yapılan tabaka kalınlığına bağlı olarak 2- 4 saat
arasında değişir.
• Kaplama stokiometresi, morfolojisi, kristal yapısı ve yönü,
kaplama parametreleri değiştirilerek kontrol altına alınabilir
6. Zümrüt VAROL
CVD Çalışma Mekanizması
1. Reaktanın substrat yüzeyine difüzyonu
2. Reaktanın substrat yüzeyine absorpsiyonu
3. Reaktan- substrat arası kimyasal reaksiyon
4. Üründen gaz desorpsiyonu
5. Üründen atık gazın uzaklaşması
13. Zümrüt VAROL
Bileşik Oluşturma
• Sıklıkla amonyak ve su buharı kullanılır.
• AX(g) + NH3(g) AN(s) + HX(g)
• AX(g) + H2O(g) AO(s) + HX(g)
• 1100oC’de aşınmaya karşı dirençli BN film üretimi
• BF3(g) + NH3(g) BN(s) + 3HF(g)
• Biriktirmede kullanılanlar;
– TiN, TaN, AlN, SiC, Al2O3, In2O3, SnO2, SiO2
• BN çok kararlı ve uçucu olmayan bir bileşik olup, yüksek
sıcaklıkta bileşikler arasındaki B ve N, BN oluşturma
eğilimindedir.
14. Zümrüt VAROL
Oransızlaşım
• Birden fazla değerlikli bileşeni içeren elementlerde görülür.
• 2AB(g) A(s) + AB2 (g)
• Biriktirmede kullanılanlar:
– Al, C, Ge, Si, III-V bileşikler
16. CVD Kaynak ve Malzeme Özellikleri
Zümrüt VAROL
• Kaynak Tipleri
– Gaz
– Uçucu Sıvılar
– Süblimleşebilir Katılar
Ve bunların kombinasyonlar
• Kullanılan Malzemeler
– Oda sıcaklığında stabil
– Yeterince uçucu
– İyi büyüme oranları ele etmek için yeterince yüksek kısmi basınç
– Reaksiyonun ısısın substratın erime noktasından küçük olması
– Tabaka üzerinden istenilen filmi üretmek ve ürünlerin kolayca
sökülmesi
– Düşük toksisite
17. Zümrüt VAROL
CVD Türleri
• Atmosferik Basınçlı Kimyasal Buhar Biriktirme (APCVD)
• Alçak Basınçlı Kimyasal Buhar Biriktirme(LPCVD)
• Metal- Organik Kimyasal Buhar Biriktirme(MOCVD)
• Plazma Destekli Kimyasal Buhar Biriktirme (PECVD)
• Lazer Kimyasal Buhar Biriktirme(LCVD)
18. Zümrüt VAROL
APCVD
• 800-1000 oC.
• Film kalınlığı homojenliği muhafa edilemez
• Yüzeyde pürüzler ulaşabilir.
• Yüzey verimi nedeniyle çökelme düşüktür.
19. Zümrüt VAROL
LPCVD
• Enerji mekanizmanın ısısından elde edilmektedir.
• Alçak basınçtan sayesinde substrata biriktirme yöntemini
bozmadan dik olarak hedef malzemeye çok yakın
pozisyonda tutulabilir.
• Yüksek sıcaklıklarda çalışmak mümkündür.
• Geniş hacimli uygulamalar
20. Zümrüt VAROL
MOCVD
• Modern aygıtların epitaksiyel büyütülmesinde yaygın olarak
kullanılmaktadır.
• Özellikle III–V yarıiletken bileşikleriyle yüksek kaliteli
epitaksiyel tabakalar,
keskin arayüzeyler ve
birkaç atom kalınlığında
çok tabakalı yapılar
üretebilmedeki avantajları
bakımından kendini kanıtlamış
önemli bir epitaksiyel
büyütme tekniğidir
21. Zümrüt VAROL
PECVD
• Elektromanyetik enerji ile genellikle birkaç 100 kHz (düşük
frekans), 13.6 MHz (radyo frekansı) ve 2.56 GHz
(mikrodalga)
• 1 Pa -100 Pa basınç aralığında
• Düşük substrat sıcaklıklarında (25-450 oC)
22. Zümrüt VAROL
LCVD
• İnce filmlerin geniş hacimli yüzeylere kaplanması
mümkündür.
• Tabakalar 100 Pa-1000 Pa basınç aralığında
25. Zümrüt VAROL
CVD Ekipmanı
• Gaz dağıtım sistemi – Reaktör odasına başlangıç maddelerinin sevk
edilmesi için.
• Reaktör odası – Birikmenin olduğu oda kaplanacak maddenin
yükleneceği mekanizma ve maddeyi getirip uzaklaştıracak bir
mekanizma
• Enerji kaynağı – Başlangıç maddelerinin reaksiyonu için gereken ısı ve
enerjiyi sağlar
• Vakum sistemi – Reaksiyon/birikme için gerekenlerden farklı diğer
gazların ortamdan uzaklaştırılması için
• Ekzoz sistemi – Reaksiyon odasından uçucu bileşenlerin
uzaklaştırılması için
• Ekzoz işlem sistemleri – Ekzoz gazları çevreye zararlı olabilir. Bu
nedenle güvenli bileşikler haline dönüştürmek için
• Proses kontrol ekipmanları – Basınç, sıcaklık ve zaman gibi proses
parametrelerinin kontrol ve izlenmesi için gereklidir
30. Zümrüt VAROL
CVD
Avantajları Dezavantajları
• Yüksek büyüme oranı
• Üretimi ekonomik, aynı
anda sayıca çok parça
kaplama
• Karmaşık şekiller ve iç
yüzeyleri üzerinde
tabakaların
uygulanabilirliği( uniform)
• Yüksek film kalitesi
• Yüksek saflıkta filmler
• Yüksek yoğunluklu filmler
• Epitaksi sözkonusu olan
filmler
• Yüksek sıcaklık aralığı
• Karmaşık süreçler
• Zehirli ve korozif gazlar
• Sıcaklık ve basınca
dayanıklı pahalı numuneler
31. Zümrüt VAROL
Uygulama Alanları
• Optik fiberler ve telekomünikasyon
• Nanomakineler
• Yarı iletkenler ve ilgili cihazlar, entegre devreler, algılayıcılar
optoelektronik cihazlar
• Kompozitler, Elyaf ve toz üretimi, Katalizörler
• Elektronik sanayisinde, makine imalat sektöründe
• Kesici-delici-aşındırıcı yüzey üretiminde,
• Yüzeylere yüksek sıcaklık direnci sağlayan seramik esaslı
kaplamalar üretiminde
• Askeriye, mühendislik, havacılık, elektronik sanayileri başta
olmak üzere birçok alanda önem kazanmasına neden
olmaktadır
33. Zümrüt VAROL
Kaynaklar
• Carlsson, J-O, Chemical Vapor Deposition
• Evcin, A (2006) Kaplama Teknikleri Ders Notları
• Surface Engineering Series Vol.2 Chemical Vapor
Deposition (2001) Ed. Jong-Hee Park: ASM İnternational
• Özenbaş, M (2013) Surface processing of materials, CVD,
METU
• Uslu, İ. (1995) The production, characterization and burnup
of uranium dioxide gadolinium oxiede fuel and boron nitride
coated uranium dioxidegadolinium oxide fuel. PhD Thesis.
METU.