This presentation discusses 5G network technology and NXP's portfolio of 5G RF modules. It provides an introduction to the cellular network market and history of communication standards. It then discusses the evolution of 5G network RF technology, including massive MIMO and mmWave solutions. The presentation introduces NXP's portfolio of 5G RF amplifier modules using LDMOS and GaN technologies ranging from 1W to 80W for sub-6GHz and mmWave frequencies. Specific product examples are given, including integrated power amplifiers, LNAs, and reference designs.
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History of Communication Standards
1G-AMPS
1980 – 1990
Voice Only
64 kb/s
2G-GSM
1990 – 2000
Digitized Voice
2 Mb/s
3G-WCDMA
2000 – 2010
Mobile Internet
1 Gb/s
4G-LTE
2010 – 2020
Mobile Broadband
5 Gb/s
5G-NR
2020 –
Man-to-Man Communication Man-to-Internet Communication Everything Connected
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Explosive Growth in Connected Devices
2015 2018
2016
25
22
20
19
17
15
28
2017 2019 2020 2021
Customers Facing…
• Skyrocketing data rates
• Multiple wireless standards
• Increasing network complexity
• Stringent power requirements
• Worldwide rise in IP traffic
Mobile Broadband for Evolving
Cellular Market
• Reduced energy consumption
• Shrinking equipment footprint
• Reduced time-to-market
Connected Devices vs.
Global Mobile Traffic
#
Connected
Devices
(Billions)
Global Mobile Traffic
(Monthly Exabytes)
Source: Ericsson, June 2016
11
20
29
35
53
75
95
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Everything Connected Requires a New Communication
Protocol: 5G New Radio (5G-NR)
Ultra-high reliability:
99.9999999%
Ultra-low latency:
Less than 1millisecond
Ultra-high density
1M nodes / km2
Ultra low complexity:
10s of kbps 5G
Mobile
Broadband
Smart
Transport
Realtime
Virtual
Reality
Internet of
Things
Massive
Machine
Communication
Data rate: 10s Gbps
Capacity: 10 Tbps / km2
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5G: Cell Phones and Much More
Low
Power
Wireless
2G/3G
4G
Pre
5G
5G
Critical
MTC:
Latency &
reliability
Connected Cars
Beyond LOS
Ultra low latency
Conventional freq.
Low Power & BW
Mobile
Broad Band
(MBB):
Capacity &
Coverage
LTE Advanced
High BW / CA
Higher diversity
Conventional freq.
Low & high power
eMBB:
Ultra High
Capacity
mmWave
RAN
GBps Data
Last mile connectivity
Ultra high bandwidth
mMIMO
New frequencies
TIME
Massive Machine
Type
Communication
(MTC):
Low Power &
Small signaling
overhead
Internet of Things
Low power & BW
NB-LTE / WiFi / 2G
Conventional freq.
2017-2019 2020-2025
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Massive MIMO
• Active Antenna Solutions enable a
leap in capacity by utilizing
between 16 and 64 transmit and
receive paths in a single active
system.
• TDD-mMIMO systems are leading
the way at 2.6 GHz and 3.5 GHz
bands but will expand to FDD and
other frequencies as well.
• Although system costs are
currently higher than traditional
RRH, significant throughput
improvements justify the
investment.
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mmWave Solutions
• To improve capacity even further,
the industry is looking to mmWave
frequencies ranging from 24 GHz to
39 GHz, enabling over 1 GHz of
bandwidth.
• Beamforming will enable spatial
multiplexing for increased spectrum
reuse.
• Solutions include Fixed Wireless
Access as well as Radio Access
Networks.
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Throughput Evolution
Massive MIMO
• Used in Macro BTS
• Existing spectrum + new bands below 6 GHz
• More data with LTE and existing handsets
• Possible now
• Least expensive option to increase throughput,
even at increased equipment cost
Microwave & Millimeterwave Frequencies
• > 6 GHz on WRC-2019 agenda
• GHz bandwidth has potential to carry a lot of data
• Propagation and building penetration issues force
“small cell” deployments – many of them needed
• Significant increase of throughput – will see use
starting 2020
Today:
LTE
Tomorrow:
mMIMO + LTE
After 2020:
mMIMO + 5G
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TRX
RFFE
RFFE
RFFE
RFFE
RFFE
RFFE
RFFE
RFFE
Solutions for mmWave
beamforming
Required RF building blocks for a
mmWave TDD beamforming system:
− Splitter / combiner network
− TX front end (PA)
− RX front end (LNA)
− TX / RX switch
− Phase shifter
VM
VM
B
A
TR TR
LNA
PA
VM
VM
B
A
TR TR
LNA
PA
VM
VM
B A
TR
TR
LNA
PA
VM
VM
B A
TR
TR
LNA
PA
BUS
Example of an integrated 4 channel solution:
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Wireless Infrastructure MIMO Evolution
Antenna Diversity Increasing in All Market Sub-segments
2 x 80W 4 x 40W 8 x 15W 32/64 x 2.5W 256 x 200mW
2T
120 Mb/s
4T
230 Mb/s
8T
440 Mb/s
mMIMO
2-5 Gb/s
MMW
>10 Gb/s
4 x 40W 32x 5W 32/64 x 2.5W 256 x 200mW
4T
230 Mb/s
16T
1 Gb/s
32T
1-2 Gb/s
64T
2-5 Gb/s
MMW
>10 Gb/s
16x 10W
4G
4G 5G
4G LTE
Wide Area Coverage
LDMOS & GaN
LTE Adv. / 5G
Suburban Coverage
LDMOS, GaN & SiGe
LTE Adv. / 5G
Urban Coverage
LDMOS, GaN & SiGe
LTE Adv. / 5G
Dense Urban Areas
LDMOS, GaN & SiGe
5G – Highest Capacity
Dense Urban Areas
SiGe & GaN
5G
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NXP’s RF Technology Toolbox
80W
40-60W
10-20W
1-5W
<1 W
LNA SW
LDMOS
48V
GaN
GaN
LDMOS 28V
GaN
and LDMOS
28V
LDMOS 28 V IC
SiGe and RFCMOS
GaAs (HBT, pHEMT)
< 1000MHz 2,0 GHz 2.6 GHz 3.5 GHz 4-10 GHz 10-60 GHz
Existing Spectrum
GaN
and LDMOS
28V
New Spectrum
AVG
PA
Power
From sub-1GHz to mm-wave;
from mW’s to 10’s of W
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Leveraging the Benefits of GaN and LDMOS
GaN Benefits
• Differentiating performance exceeding
LDMOS above 2.5 GHz
• Enables 5G at higher frequencies
• Broadband design
• High efficiency at high frequencies
• Comparable thermal package as LDMOS
• Compact PA design (more power in smaller
package, smaller matching circuitry)
• Wideband CW and Pulse PA applications:
• 200-2600 MHz at 100 W
• S-band 2.7-3.5 GHz at 700 W
LDMOS Benefits
• Competitive performance to 2.7 GHz
• Cost effective PA solutions
• Mature process technology
• High ruggedness up to 65:1 VSWR
• Consistent thermal behavior
• Broadband VHF/UHF below 1 GHz
• Highest power up to 1.5 GHz
• Narrow-band PA applications:
• Cellular bands up to 2.7 GHz
• Avionics/L-band 1.2-1.4 GHz up to 1.5 kW
• S-band 2.7-3.1 GHz at 300 W
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NXP Family of Fully-Integrated High Efficiency Power
Amplifiers
• Power levels 2.5 –
5 Watt devices
• Roadmap covering bands
2.3 GHz to 5 GHz
• Easy implementation –
50 Ω input & output
• Pin-compatibility between
all frequency bands and
power levels
• LDMOS – low cost solution
Rx Front-End
Module
4x4 mm2 package
PA Module
6x10 mm2 package
Pre-Driver Amplifier
3x4 mm2 package
Low Cost Small Size
21x35 mm2 solution
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Block diagram
Tx In
I2C
ENABLE
RX OUT
RF PA
CONTROL
BYPASS
AFRX5G132
AFLP5G35647
BIAS CONTROLLER
AFSC5G35D37
T/R SWITCH
TO ANTENNA
FEEDBACK OUT
BYPASS
TX OUT /
RX IN
CONTROL
DAC0
DAC1
Final stage:
AFSC5G35D37
Driver:
AFLP5G25641
RX Module:
AFRX5G372
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Airfast 5G MCM Benefits
Device 10x6 mm2
Solution 15x11 mm2
Time To Market
The ease of use of a 50-ohm, high gain dual-stage PA with integrated Doherty shortens design cycle time
• Eliminates multiple prototype passes
• No compromise on performance
• 50-ohm, pin-compatibility from a MCM PA to another enables reuse for other frequencies / power levels
Manufacturing
A surface mount device, compatible with standard pick and place + reflow, facilitates manufacturing
• Reduces assembly time increasing ROI for manufacturing equipment and reduced need for capital investment
• Eliminates testing redundancies while improving yields
Smaller, lighter active antenna systems
The high integration enables lighter 64T active antenna systems.
• Small size enabled by a 10 x 6 mm package
• 50-ohm in/out with integrated Doherty reduces external component out
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Devices
Dual-stage PA
• AFSC5G23D37
• AFSC5G26D37
• AFSC5G35D37
• AFSC5G37D37
• AFSC5G35D35 10x6 mm2
LNA + switch
• AFRX5G272
• AFRX5G372
6.2x6.2 mm2
Pre-driver
• AFLP5G25641
• AFLP5G35645
4x3 mm2
Airfast 5G MCM Enablement – Reference Circuits & Reference Designs
Reference Design
Reference Circuits
Documentation
(data pack, dxf
drawings) available
from nxp.com
Orderable P/N:
“device#”-EVB
(ex: AFSC5G37D37-EVB)
$250 MSRP
Reference Designs
Reference Design:
AFDEV5G-26D37
Reference Design:
AFDEV5G-35D37
More details on
AFDEV5G-26D37
More details on
AFDEV5G-35D37
Orderable Q4 2019
Available now
Orderable Sep 2019
Pre-driver, PA and
LNA together
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Part Number Decoder
AFSC5G35D37T2
5G Family
2000 pcs reel
size (MPQ)
NXP’s RF Signature for Cellular
Infrastructure: Airfast
System-in-compact
package
Frequency
band
dBm Avg
Power
Doherty Series
PA Modules:
AFLP5G35645T5
Linear Pre-driver Frequency
band
5000 pcs reel
size (MPQ)
Pre-Drivers:
AFRX5G372T4
Receiver Frequency
band
Generation
2500 pcs reel
size (MPQ)
Rx Modules:
Back to
portfolio
selection
Back to 5G
portfolio
Introduction
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Introducing Airfast 5G MCM Solutions – 28 V LDMOS
Average
Output
Power
2300 MHz 2400 MHz 2500 MHz 2600 MHz 2700 MHz
~ 3400 MHz 3500 MHz 3600 MHz 3700 MHz 3800 MHz
AFSC5G23D37 AFSC5G26D37
AFSC5G35D35
AFSC5G35D37 AFSC5G37D37
5
W
37
dBm
27 dB gain, 38% PAE
2300-2400 MHz
27 dB gain, 38% PAE
2545-2655 MHz
27 dB gain, 36% PAE
3400-3600 MHz
29 dB gain, 38% PAE
3600-3800 MHz
29 dB gain, 38% PAE
3400-3600 MHz
PA MCMs:
Rx Front-end Modules (LNA + switch):
Pre-Driver Amplifiers:
29
dBm
AFLP5G25641
2300-2700 MHz
AFLP5G35645
3400-3800 MHz
AFRX5G272
2300-2700 MHz
AFRX5G372
3300-4200 MHz
3
W
35
dBm
Test conditions: PAE @ 8-8.5 dB OBO
✓ Simple DPD
✓ ACPR < -50 dBc w/ 2x20MHz LTE 7.5dB PAR
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mMIMO Power budget
BTS Total Pout
(W)
BTS Total Pout
(dBm)
MIMO
(#)
Antenna Pout
(W) Antenna Pout (dBm)
PA avg
Pout (W)
PA avg Pout
(dBm)
Losses
(dB)
320 55 16 20.0 43 32 45 2
240 54 16 15.0 42 24 44 2
200 53 16 12.5 41 20 43 2
320 55 32 10.0 40 16 42 2
240 54 32 7.5 39 12 41 2
200 53 32 6.3 38 10 40 2
160 52 16 10.0 40 16 42 2
100 50 16 6.3 38 10 40 2
320 55 64 5.0 37 8 39 2
240 54 64 3.8 36 6 38 2
200 53 64 3.1 35 5 37 2
160 52 32 5.0 37 8 39 2
100 50 32 3.1 35 5 37 2
3 35 4 0.8 29 1.27 31 2
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AFSC5G37D37
Typical line-up:
• 3600-3800 MHz
• 37 dBm / 5 W avg (45.6 dBm / 36 W peak)
• 28 V LDMOS
• 50-ohm in/out, dual-stage MCM with Doherty combiner
• 38% efficiency @ 8 dB OBO
• 29 dB gain
• 10x6 mm2 over-molded plastic package
Comments:
• Designed for 240 W, 64T mMIMO active antennas
for the B48
• In production
• Reference circuit: AFSC5G37D37-EVB available
Reference Circuit:
Pout = 5 W avg., VDD = 29 V, 1x 20 MHz LTE, Input PAR 8 dB
Carrier Center
Frequency
Gain
(dB)
ACPR
(dBc)
PAE
(%)
3600 MHz 29.5 -32.4 39%
3700 MHz 29.7 -33.6 38%
3800 MHz 29.9 -34.4 38%
Final stage:
AFSC5G37D37
Driver:
AFLP5G35645
RX Module:
AFRX5G372
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AFSC5G35D37
Typical line-up:
• 3400-3600 MHz
• 37 dBm / 5 W avg (45.6 dBm / 36 W peak)
• 28 V LDMOS
• 50-ohm in/out, dual-stage MCM with Doherty combiner
• 39% efficiency @ 8 dB OBO
• 29 dB gain
• 10x6 mm2 over-molded plastic package
Comments:
• Designed for 240 W, 64T mMIMO active antennas
for the B42
• In production
• Reference circuit: AFSC5G35D37-EVB available
Reference Circuit:
Pout = 5 W avg., VDD = 29 V, 1x 20 MHz LTE, Input PAR 8 dB
Final stage:
AFSC5G35D37
Driver:
AFLP5G35645
RX Module:
AFRX5G372
Carrier Center
Frequency
Gain
(dB)
ACPR
(dBc)
PAE
(%)
3400 MHz 29.2 -31.4 39%
3500 MHz 29.3 -32.8 39%
3600 MHz 29.4 -31.0 39%
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AFSC5G35D35
Typical line-up:
• 3400-3600 MHz
• 35 dBm / 3 W avg (43 dBm / 20 W peak)
• 28 V LDMOS
• 50-ohm in/out, dual-stage MCM with Doherty combiner
• 37% efficiency @ 8 dB OBO
• 25 dB gain
• 10x6 mm2 over-molded plastic package
Comments:
• Designed for 240 W, 64T mMIMO active antennas
for the B42
• In production
• Reference circuit: AFSC5G35D35-EVB available
Reference Circuit:
Pout = 3 W avg., VDD = 24 V, 1x 20 MHz LTE, Input PAR 8 dB
Final stage:
AFSC5G35D35
Driver:
AFLP5G35645
RX Module:
AFRX5G372
Carrier Center
Frequency
Gain
(dB)
ACPR
(dBc)
PAE
(%)
3400 MHz 25.3 -27.6 37%
3500 MHz 24.9 -30.8 37%
3600 MHz 24.8 -32.9 35%
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AFSC5G26D37
Typical line-up:
• 2496-2690 MHz
• 37 dBm / 5 W avg (45.7 dBm / 37 W peak)
• 28 V LDMOS
• 50-ohm in/out, dual-stage MCM with Doherty combiner
• 40% efficiency @ 8 dB OBO
• 27 dB gain
• 10x6 mm2 over-molded plastic package
Comments:
• Designed for 200 W, 64T mMIMO active antennas
for the B41
• In production
• Reference circuit: AFSC5G26D37-EVB available
Reference Circuit:
Pout = 5 W avg., VDD = 28 V, 1x 20 MHz LTE, Input PAR 8 dB
Final stage:
AFSC5G26D37
Driver:
AFLP5G25641
RX Module:
AFRX5G272
Carrier Center
Frequency
Gain
(dB)
ACPR
(dBc)
PAE
(%)
2575 MHz 27.4 –27.8 40%
2600 MHz 27.2 –27.9 40%
2625 MHz 27.1 –27.7 40%
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AFSC5G23D37
Typical line-up:
• 2300-2400 MHz
• 37 dBm / 5 W avg (45.7 dBm / 37 W peak)
• 28 V LDMOS
• 50-ohm in/out, dual-stage MCM with Doherty combiner
• 38% efficiency @ 8 dB OBO
• 27 dB gain
• 10x6 mm2 over-molded plastic package
Comments:
• Designed for 240 W, 64T mMIMO active antennas
for the B40
• In production
• Reference circuit: AFSC5G23D37-EVB available
Reference Circuit:
Pout = 5 W avg., VDD = 26 V, 1x 20 MHz LTE, Input PAR 8 dB
Final stage:
AFSC5G23D37
Driver:
AFLP5G25641
RX Module:
AFRX5G272
Carrier Center
Frequency
Gain
(dB)
ACPR
(dBc)
PAE
(%)
2575 MHz 27.4 –27.8 40%
2600 MHz 27.2 –27.9 40%
2625 MHz 27.1 –27.7 40%
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AFLP5G35645
Functional Block Diagram: Typical line-up:
• 3400-3800 MHz pre-driver
• 29 dBm avg (25 dBm @ 3.3 V)
• 5 V GaAs
• 50-ohm in/out, 3-stage MCM with 1.8 V logic control pin for bias
enable/disable TDD operation.
• Very low power consumption: 158 mW @ 5 V
(114 mW @ 3.3 V)
• 4x3 mm2 plastic package
Comments:
• Pre-driver for AFSC5G37D37, 35D37, 35D35
• In development, qualification planned end Q4 2019
MATCH
CONTROLLER
GND
GND
GND GND GND GND
VCC2
GND EN VCC1 GND
LLS
RFIN
GND
GND
RFOUT
Final stage:
AFSC5G35D37
Driver:
AFLP5G35645
RX Module:
AFRX5G372
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AFLP5G25641
Functional Block Diagram: Typical line-up:
• 2300-2700 MHz pre-driver
• 29 dBm avg (25 dBm @ 3.3 V)
• 5 V GaAs
• 50-ohm in/out, 3-stage MCM with 1.8 V logic control pin for bias
enable/disable TDD operation.
• Very low power consumption: 158 mW @ 5 V
(114 mW @ 3.3 V)
• 4x3 mm2 plastic package
Comments:
• Pre-driver for AFSC5G23D37, 26D37
• In development, qualification planned end Q4 2019
MATCH
CONTROLLER
GND
GND
GND GND GND GND
VCC2
GND EN VCC1 GND
LLS
RFIN
GND
GND
RFOUT
Final stage:
AFSC5G26D37
Driver:
AFLP5G25641
RX Module:
AFRX5G272
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AFRX5G372
Functional Block Diagram: Typical line-up:
Comments:
• Rx for AFSC5G37D37, 35D37, 35D35
• In development, qualification planned in Q1 2020
• Support circuitry to work from a 5 V supply and a 1.8
logic-level T/R control
• Support Tx and Rx modes, which are controlled by
T/R logic signaling
• 3300-5000 MHz
• 5 V GaAs LNA + switch
• Noise Figure: 1.3 dB
• Gain 33dB
• 50-ohm in/out
• 6.2x6.2 mm2 plastic package
PA
Controller
LNA LNA
Rx Tx
Tx / Rx
Digital control (1.8 V JEDEC)
VDD
(5 V)
6.2 x 6.2 LGA
P in switch
Final stage:
AFSC5G35D37
Driver:
AFLP5G35645
RX Module:
AFRX5G372
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AFRX5G272
Functional Block Diagram: Typical line-up:
• 2300-2700 MHz LNA + switch
• Noise Figure: 1.3 dB
• 5 V GaAs
• Gain 33dB
• 50-ohm in/out
• 6.2x6.2 mm2 plastic package
Comments:
• Rx for AFSC5G23D37, 26D37
• In development, qualification planned in Q1 2020
• Support circuitry to work from a 5 V supply and a 1.8
logic-level T/R control
• Support Tx and Rx modes, which are controlled by
T/R logic signaling
PA
Controller
LNA LNA
Rx Tx
Tx / Rx
Digital control (1.8 V JEDEC)
VDD
(5 V)
6.2 x 6.2 LGA
P in switch
Final stage:
AFSC5G26D37
Driver:
AFLP5G25641
RX Module:
AFRX5G272
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AFDEV5G-35D37 Reference Design
Functional Block Diagram: Typical line-up:
• 3400-3600 MHz
• 30 V LDMOS
• 5 W AVG, 37 dBm
• Integrated RF design
• 50 ohm input/output
• In development, orderable Q1 2020
Design Size:
20.95 mm 38.35 mm
57.15 mm
34.52 mm
Total height including
cover 9.7 mm
Tx In
I2C
ENABLE
RX OUT
RF PA
CONTROL
BYPASS
AFRX5G372
AFLP5G35647
BIAS CONTROLLER
AFSC5G35D37
T/R SWITCH
TO ANTENNA
FEEDBACK OUT
BYPASS
TX OUT /
RX IN
CONTROL
DAC0
DAC1
Final stage:
AFSC5G35D37
Driver:
AFLP5G35645
RX Module:
AFRX5G372
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AFDEV5G-26D37 Reference Design
Functional Block Diagram: Typical line-up:
• 2496-2690 MHz
• 30 V LDMOS
• 5 W AVG, 37 dBm
• Integrated RF design
• 50 ohm input/output
• In development, orderable Q1 2020
Design Size:
20.95 mm 38.35 mm
57.15 mm
34.52 mm
Total height including
cover 9.7 mm
Tx In
I2C
ENABLE
RX OUT
RF PA
CONTROL
BYPASS
AFRX5G272
AFLP5G25641
BIAS CONTROLLER
AFSC5G26D37
T/R SWITCH
TO ANTENNA
FEEDBACK OUT
BYPASS
TX OUT /
RX IN
CONTROL
DAC0
DAC1
Final stage:
AFSC5G26D37
Driver:
AFLP5G25641
RX Module:
AFRX5G272
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