ESD Damage – The Surprisingly Dominant Failure Mechanism! Cheryl Tulkoff
This document discusses electrostatic discharge (ESD) as a surprisingly dominant failure mechanism in electronics. It provides an overview of ESD models like the human body model and charged device model. It also discusses ESD failures at various levels from the device to the system level. The document recommends techniques for ESD damage prevention including design solutions, manufacturing solutions, and establishing an electrostatic discharge protection area.
This document discusses metal-semiconductor contacts and junctions. It provides figures from the textbook explaining the band diagrams and behavior of Ohmic contacts, Schottky contacts, and pn junction diodes. It addresses questions about deriving analytic models for the I-V characteristics and small-signal models of these devices based on their band structures and transport mechanisms.
This document discusses phased array ultrasonic testing (PAUT) technology. It begins with an introduction to the company, Magnum, which provides both conventional x-ray and advanced technologies like PAUT. It then explains that PAUT allows the direction and focus of ultrasound beams to be changed electronically using arrays of transducer elements and delay laws. Examples are given of how PAUT can be used to detect weld flaws like porosity, slag inclusions, cracks, incomplete penetration, and incomplete fusion. The document also outlines the process for certification in phased array testing.
Este documento describe un Pt100, un sensor de temperatura que mide la temperatura mediante el cambio en la resistencia de un alambre de platino. Explica que un Pt100 de 100 ohmios a 0°C incrementa su resistencia de manera no lineal a medida que aumenta la temperatura, y que tablas permiten determinar la temperatura correspondiente a una resistencia dada. También describe las partes principales de un Pt100, sus ventajas sobre otras opciones y los diferentes métodos de conexión para medir su resistencia con precisión.
this presentation is about transistor and its type, how transistor works, what is the importance of the transistor in our world and what was use before transistor.
This coupon test report summarizes the results of a welding qualification test. It includes details of the welding parameters, materials used, and test results. Six coupons were welded and tested for maximum load, staincile strength, and fracture location. The welder was qualified based on meeting the minimum tensile strength requirements. Additional remarks were provided on the bead, nick-break, and tensile strength tests.
Introduction to the automotive esd(iso 10605)Vinoth Kumar K
This document provides an introduction to automotive ESD testing based on ISO 10605. It discusses why ESD is a problem for electronic devices, damaging sensitive components through small traces. When a spark occurs, it takes 3kV/mm to create a spark through air breakdown. ESD testing evaluates human static discharge, modeling a human as a 150-330pF capacitor with 330 ohm-2kohm resistance. Contact discharge directly tests grounding while air discharge tests insulation. Real testing focuses on contact due to difficulty achieving repeatable air discharge. Setup places the DUT 100mm from grounded metal with 5mm styrofoam between.
Awsa2 4-1993-simbolos normalizados para soldeo soldeo fuerte y ensayos no des...Joan Daniel Quijada
Este documento establece símbolos normalizados para especificar información sobre soldeo, soldeo fuerte y examen no destructivo en planos de ingeniería. Facilita detalles e instrucciones para la construcción e interpretación de estos símbolos, los cuales permiten especificar la secuencia de operaciones y los métodos y alcances de las pruebas requeridas. El sistema de símbolos facilita la comunicación efectiva de la información necesaria entre diseñadores y soldadores.
ESD Damage – The Surprisingly Dominant Failure Mechanism! Cheryl Tulkoff
This document discusses electrostatic discharge (ESD) as a surprisingly dominant failure mechanism in electronics. It provides an overview of ESD models like the human body model and charged device model. It also discusses ESD failures at various levels from the device to the system level. The document recommends techniques for ESD damage prevention including design solutions, manufacturing solutions, and establishing an electrostatic discharge protection area.
This document discusses metal-semiconductor contacts and junctions. It provides figures from the textbook explaining the band diagrams and behavior of Ohmic contacts, Schottky contacts, and pn junction diodes. It addresses questions about deriving analytic models for the I-V characteristics and small-signal models of these devices based on their band structures and transport mechanisms.
This document discusses phased array ultrasonic testing (PAUT) technology. It begins with an introduction to the company, Magnum, which provides both conventional x-ray and advanced technologies like PAUT. It then explains that PAUT allows the direction and focus of ultrasound beams to be changed electronically using arrays of transducer elements and delay laws. Examples are given of how PAUT can be used to detect weld flaws like porosity, slag inclusions, cracks, incomplete penetration, and incomplete fusion. The document also outlines the process for certification in phased array testing.
Este documento describe un Pt100, un sensor de temperatura que mide la temperatura mediante el cambio en la resistencia de un alambre de platino. Explica que un Pt100 de 100 ohmios a 0°C incrementa su resistencia de manera no lineal a medida que aumenta la temperatura, y que tablas permiten determinar la temperatura correspondiente a una resistencia dada. También describe las partes principales de un Pt100, sus ventajas sobre otras opciones y los diferentes métodos de conexión para medir su resistencia con precisión.
this presentation is about transistor and its type, how transistor works, what is the importance of the transistor in our world and what was use before transistor.
This coupon test report summarizes the results of a welding qualification test. It includes details of the welding parameters, materials used, and test results. Six coupons were welded and tested for maximum load, staincile strength, and fracture location. The welder was qualified based on meeting the minimum tensile strength requirements. Additional remarks were provided on the bead, nick-break, and tensile strength tests.
Introduction to the automotive esd(iso 10605)Vinoth Kumar K
This document provides an introduction to automotive ESD testing based on ISO 10605. It discusses why ESD is a problem for electronic devices, damaging sensitive components through small traces. When a spark occurs, it takes 3kV/mm to create a spark through air breakdown. ESD testing evaluates human static discharge, modeling a human as a 150-330pF capacitor with 330 ohm-2kohm resistance. Contact discharge directly tests grounding while air discharge tests insulation. Real testing focuses on contact due to difficulty achieving repeatable air discharge. Setup places the DUT 100mm from grounded metal with 5mm styrofoam between.
Awsa2 4-1993-simbolos normalizados para soldeo soldeo fuerte y ensayos no des...Joan Daniel Quijada
Este documento establece símbolos normalizados para especificar información sobre soldeo, soldeo fuerte y examen no destructivo en planos de ingeniería. Facilita detalles e instrucciones para la construcción e interpretación de estos símbolos, los cuales permiten especificar la secuencia de operaciones y los métodos y alcances de las pruebas requeridas. El sistema de símbolos facilita la comunicación efectiva de la información necesaria entre diseñadores y soldadores.
The resistance of a PN diode changes depending on the operating region and the type of applied voltage. There are three levels of resistance:
1) DC or static resistance is measured at a constant operating point and is higher in reverse bias and at low currents.
2) AC or dynamic resistance is measured by a small change in voltage and current near the operating point (Q-point) and is lower in the vertical rise region and at higher currents.
3) Average AC resistance describes the resistance over a large signal input and vertical rise region. It is defined by a straight line between the operating limits.
This document discusses thermography testing as a non-destructive testing method. It describes how thermography detects infrared radiation emitted from all objects based on their temperature. Defects appear as temperature variations that can be visualized using thermal cameras. There are different thermography techniques including pulsed thermography, lock-in thermography, and vibrothermography. Pulsed thermography involves heating the material with a short pulse and observing defects. Thermography allows for rapid inspection of large areas and can detect defects like delaminations. While it is useful for many applications, it has limitations in penetrating deep within materials.
Este documento describe los conceptos básicos de los semiconductores intrínsecos, incluyendo la densidad de estados, la función de distribución de Fermi-Dirac y el cálculo de la densidad de portadores. Explica que en un semiconductor intrínseco hay la misma cantidad de electrones libres que huecos, resultando en una corriente neta cero. Finalmente, introduce brevemente los semiconductores dopados de tipo n y p.
Dr. R. RAJA presented on the concept of power electronics. Power electronics is a hybrid field that combines power engineering, electronics, semiconductor devices, and control systems. It allows electrical energy to be regulated and converted into usable forms like motion, light, and heat. The development of silicon controlled rectifiers in 1958 was a major advancement, allowing more effective control of electrical energy than previous technologies. Power electronics devices act as switches that are either fully on with zero voltage drop and full current, or fully off with zero current and full voltage drop. Proper thermal management is important due to power losses during switching and in the on and off states. Power electronic systems also require control and feedback circuits to regulate the output as desired for applications
This document provides information on non-destructive testing (NDT) methods. It discusses several NDT techniques including dye penetrant testing, magnetic particle testing, ultrasonic testing, eddy current testing, and radiography testing. For each method, it describes the basic principles, applications, advantages, and limitations. The key NDT methods covered allow for detection of surface and internal defects without damaging the test components. The document aims to educate about non-destructive evaluation and quality control techniques for metal parts.
Kirchhoff's laws describe the conservation of electric charge and energy in electrical circuits. There are two Kirchhoff's laws: 1) Kirchhoff's current law (KCL) states that the algebraic sum of currents in a network meeting at a point is zero. 2) Kirchhoff's voltage law (KVL) states that the directed sum of the potential differences around any closed network loop is zero. Mesh analysis and nodal analysis are methods used to solve planar circuits using KCL and KVL. Thevenin's theorem states that any linear electrical network can be reduced to an equivalent circuit of a voltage source in series with a resistor at its terminals.
This document provides an overview of bipolar junction transistors (BJTs). It discusses:
1. BJTs were invented in 1947 at Bell Labs and helped launch the technology revolution. They come in npn and pnp types.
2. BJTs have three doped semiconductor regions (emitter, base, collector) separated by two pn junctions. One type has an npn structure and the other a pnp structure.
3. BJTs are used as linear amplifiers to boost signals and as electronic switches. Proper biasing of the base-emitter and base-collector junctions is needed for transistor operation.
Este documento presenta información sobre diferentes tipos de sensores de temperatura, incluyendo termopares, RTD y termistores. Describe los principios de operación de cada sensor y proporciona ejemplos de marcas comerciales como Omega, ABB y Danfoss. También incluye tablas de calibración y ecuaciones matemáticas que describen el comportamiento térmico-eléctrico de los sensores.
Voltmeter measures voltage across a known source of potential. The voltage referred on the scale of the voltmeter refers to full-scale deflection (FSD). The FSD indication is always on the right hand side of the instrument.
A multimeter is a device used to measure voltage, resistance, and current in electronics and electrical equipment. There are two main types: analog, which has a needle display, and digital, which has an LCD screen. A multimeter can measure voltage, resistance, current, and test continuity. It displays measurement values and has controls to select the measurement function and range.
Este documento introduce conceptos básicos relacionados con medidas eléctricas. Define términos como medida, deflexión, campo nominal de referencia, clase, rango de medida, sensibilidad, constante de lectura, consumo propio, resolución instrumental, sobrecarga, exactitud y precisión. También explica las unidades fundamentales del sistema MKS utilizadas para medidas eléctricas como el amperio, voltio, ohmio, coulomb, weber, julio, henrio y faradio.
The document discusses the application of junction diodes as rectifiers. It describes how a rectifier converts alternating current into direct current by allowing current to flow in only one direction. It then discusses half-wave and full-wave rectifiers, explaining their construction, working principles, and how they produce pulsating direct current from an alternating current source. The document also provides details about solar cells, including their construction, working principle, materials used, advantages, disadvantages, and applications.
The document describes various applications of operational amplifiers including inverting amplifiers, non-inverting amplifiers, voltage followers, adders, subtractors, differentiators, integrators, and voltage to current and current to voltage converters. An ideal op-amp is characterized by infinite input impedance, infinite gain, zero output impedance, and infinite bandwidth. Real op-amps require a DC supply voltage and have limitations compared to ideal characteristics. Basic op-amp circuits provide inverting or non-inverting amplification, voltage following, signal summing/addition, subtraction, integration, differentiation, and conversion between voltage and current domains.
Este documento presenta información sobre medición e instrumentación industrial. Explica términos clave como variable medida, señal medida, rango de un instrumento y amplitud. También define instrumentación industrial y clasifica los instrumentos según su función, variable medida y características estáticas y dinámicas. Finalmente, describe la simbología e identificación de instrumentos utilizada en diagramas de flujo e instrumentación.
This document summarizes the ASME PCC-2 standard for nonmetallic repairs of pipes and pipelines. It discusses the development history and contents of Part 4, including the qualification of materials, design calculations, installation requirements, and installer certification process. The presentation provides an overview of the standard's approach to repairs of both non-leaking and leaking pipes using composite materials and its goals for future enhancements.
The document is a project report submitted by four students for their B.Tech degree in Electrical Engineering. It discusses the design of an Arduino-based power inverter using MATLAB. The objective is to design a low-cost inverter compared to commercially available options. The report includes chapters on the history of inverters, components used including Arduino, MOSFETs, transformers and batteries. It also discusses simulations of inverter circuits and the design of the Arduino-based inverter circuit.
1. A diode is a semiconductor device that allows current to flow in only one direction. It has a p-type and n-type semiconductor junction.
2. Under forward bias, current flows easily from the p-type to the n-type side. Under reverse bias, very little current flows.
3. Common diode applications include rectification circuits (half-wave, full-wave, and bridge rectifiers), which convert alternating current to direct current. Rectifiers use the one-way conduction of diodes to filter out the negative portions of the AC waveform.
Este documento describe los armónicos en las redes eléctricas perturbadas y su tratamiento. Explica qué son los armónicos, los efectos que producen las corrientes y tensiones armónicas, y los límites aceptables según las normas. También analiza las causas comunes de armónicos como convertidores estáticos, alumbrado y hornos de arco, y describe soluciones como inductancias antiarmónicas y filtros resonantes y amortiguados para tratar las perturbaciones armónicas en las redes eléctricas.
The resistance of a PN diode changes depending on the operating region and the type of applied voltage. There are three levels of resistance:
1) DC or static resistance is measured at a constant operating point and is higher in reverse bias and at low currents.
2) AC or dynamic resistance is measured by a small change in voltage and current near the operating point (Q-point) and is lower in the vertical rise region and at higher currents.
3) Average AC resistance describes the resistance over a large signal input and vertical rise region. It is defined by a straight line between the operating limits.
This document discusses thermography testing as a non-destructive testing method. It describes how thermography detects infrared radiation emitted from all objects based on their temperature. Defects appear as temperature variations that can be visualized using thermal cameras. There are different thermography techniques including pulsed thermography, lock-in thermography, and vibrothermography. Pulsed thermography involves heating the material with a short pulse and observing defects. Thermography allows for rapid inspection of large areas and can detect defects like delaminations. While it is useful for many applications, it has limitations in penetrating deep within materials.
Este documento describe los conceptos básicos de los semiconductores intrínsecos, incluyendo la densidad de estados, la función de distribución de Fermi-Dirac y el cálculo de la densidad de portadores. Explica que en un semiconductor intrínseco hay la misma cantidad de electrones libres que huecos, resultando en una corriente neta cero. Finalmente, introduce brevemente los semiconductores dopados de tipo n y p.
Dr. R. RAJA presented on the concept of power electronics. Power electronics is a hybrid field that combines power engineering, electronics, semiconductor devices, and control systems. It allows electrical energy to be regulated and converted into usable forms like motion, light, and heat. The development of silicon controlled rectifiers in 1958 was a major advancement, allowing more effective control of electrical energy than previous technologies. Power electronics devices act as switches that are either fully on with zero voltage drop and full current, or fully off with zero current and full voltage drop. Proper thermal management is important due to power losses during switching and in the on and off states. Power electronic systems also require control and feedback circuits to regulate the output as desired for applications
This document provides information on non-destructive testing (NDT) methods. It discusses several NDT techniques including dye penetrant testing, magnetic particle testing, ultrasonic testing, eddy current testing, and radiography testing. For each method, it describes the basic principles, applications, advantages, and limitations. The key NDT methods covered allow for detection of surface and internal defects without damaging the test components. The document aims to educate about non-destructive evaluation and quality control techniques for metal parts.
Kirchhoff's laws describe the conservation of electric charge and energy in electrical circuits. There are two Kirchhoff's laws: 1) Kirchhoff's current law (KCL) states that the algebraic sum of currents in a network meeting at a point is zero. 2) Kirchhoff's voltage law (KVL) states that the directed sum of the potential differences around any closed network loop is zero. Mesh analysis and nodal analysis are methods used to solve planar circuits using KCL and KVL. Thevenin's theorem states that any linear electrical network can be reduced to an equivalent circuit of a voltage source in series with a resistor at its terminals.
This document provides an overview of bipolar junction transistors (BJTs). It discusses:
1. BJTs were invented in 1947 at Bell Labs and helped launch the technology revolution. They come in npn and pnp types.
2. BJTs have three doped semiconductor regions (emitter, base, collector) separated by two pn junctions. One type has an npn structure and the other a pnp structure.
3. BJTs are used as linear amplifiers to boost signals and as electronic switches. Proper biasing of the base-emitter and base-collector junctions is needed for transistor operation.
Este documento presenta información sobre diferentes tipos de sensores de temperatura, incluyendo termopares, RTD y termistores. Describe los principios de operación de cada sensor y proporciona ejemplos de marcas comerciales como Omega, ABB y Danfoss. También incluye tablas de calibración y ecuaciones matemáticas que describen el comportamiento térmico-eléctrico de los sensores.
Voltmeter measures voltage across a known source of potential. The voltage referred on the scale of the voltmeter refers to full-scale deflection (FSD). The FSD indication is always on the right hand side of the instrument.
A multimeter is a device used to measure voltage, resistance, and current in electronics and electrical equipment. There are two main types: analog, which has a needle display, and digital, which has an LCD screen. A multimeter can measure voltage, resistance, current, and test continuity. It displays measurement values and has controls to select the measurement function and range.
Este documento introduce conceptos básicos relacionados con medidas eléctricas. Define términos como medida, deflexión, campo nominal de referencia, clase, rango de medida, sensibilidad, constante de lectura, consumo propio, resolución instrumental, sobrecarga, exactitud y precisión. También explica las unidades fundamentales del sistema MKS utilizadas para medidas eléctricas como el amperio, voltio, ohmio, coulomb, weber, julio, henrio y faradio.
The document discusses the application of junction diodes as rectifiers. It describes how a rectifier converts alternating current into direct current by allowing current to flow in only one direction. It then discusses half-wave and full-wave rectifiers, explaining their construction, working principles, and how they produce pulsating direct current from an alternating current source. The document also provides details about solar cells, including their construction, working principle, materials used, advantages, disadvantages, and applications.
The document describes various applications of operational amplifiers including inverting amplifiers, non-inverting amplifiers, voltage followers, adders, subtractors, differentiators, integrators, and voltage to current and current to voltage converters. An ideal op-amp is characterized by infinite input impedance, infinite gain, zero output impedance, and infinite bandwidth. Real op-amps require a DC supply voltage and have limitations compared to ideal characteristics. Basic op-amp circuits provide inverting or non-inverting amplification, voltage following, signal summing/addition, subtraction, integration, differentiation, and conversion between voltage and current domains.
Este documento presenta información sobre medición e instrumentación industrial. Explica términos clave como variable medida, señal medida, rango de un instrumento y amplitud. También define instrumentación industrial y clasifica los instrumentos según su función, variable medida y características estáticas y dinámicas. Finalmente, describe la simbología e identificación de instrumentos utilizada en diagramas de flujo e instrumentación.
This document summarizes the ASME PCC-2 standard for nonmetallic repairs of pipes and pipelines. It discusses the development history and contents of Part 4, including the qualification of materials, design calculations, installation requirements, and installer certification process. The presentation provides an overview of the standard's approach to repairs of both non-leaking and leaking pipes using composite materials and its goals for future enhancements.
The document is a project report submitted by four students for their B.Tech degree in Electrical Engineering. It discusses the design of an Arduino-based power inverter using MATLAB. The objective is to design a low-cost inverter compared to commercially available options. The report includes chapters on the history of inverters, components used including Arduino, MOSFETs, transformers and batteries. It also discusses simulations of inverter circuits and the design of the Arduino-based inverter circuit.
1. A diode is a semiconductor device that allows current to flow in only one direction. It has a p-type and n-type semiconductor junction.
2. Under forward bias, current flows easily from the p-type to the n-type side. Under reverse bias, very little current flows.
3. Common diode applications include rectification circuits (half-wave, full-wave, and bridge rectifiers), which convert alternating current to direct current. Rectifiers use the one-way conduction of diodes to filter out the negative portions of the AC waveform.
Este documento describe los armónicos en las redes eléctricas perturbadas y su tratamiento. Explica qué son los armónicos, los efectos que producen las corrientes y tensiones armónicas, y los límites aceptables según las normas. También analiza las causas comunes de armónicos como convertidores estáticos, alumbrado y hornos de arco, y describe soluciones como inductancias antiarmónicas y filtros resonantes y amortiguados para tratar las perturbaciones armónicas en las redes eléctricas.
22. 什么是TLP测试?
标准TLP的典型应用
2. 用TLP和故障自动检测装置测试DUT的ESD抗扰度/敏感度
系统/IC/模块的ESD抗扰度通常由不同ESD测试装置来进行评估。由瞬时高能量造成的故障可以通过上升时间/脉冲宽
度受控的TLP脉冲或者RC电路向50欧姆系统放电得到。TLP测试结果可用于估测HBM, IEC61000-4-2,HMM的失效
等级。
ESD热失效相关*(注意): TVS IEC 1 kV level = 2 A , 100 ns TLP pulse level
IC HBM 1 kV level = 1.5 A, 100 ns TLP pulse level
请参考TLP测试用法的相关文献,不同设备的敏感性不同!
Correlation between transmission-line-pulsing I-V curve and human-body-model, Jon Barth, John Richner
ESD Relations between system level ESD and (vf-)TLP, T. Smedes, J. van Zwol, G. de Raad, T. Brodbeck, H. Wolf
A TLP-based Human Metal Model ESD-Generator for Device Qualification according to IEC 61000-4-2
Yiqun Cao 1, David Johnsson 1, Bastian Arndt 2 and Matthias Stecher
Pitfalls when correlating TLP, HBM and MM testing, Guido Notermans, Peter de Jong and Fred Kuper
A Failure Levels Study of Non-Snapback ESD Devices for Automotive Applications, Yiqun Cao , Ulrich Glaser ,
Stephan Frei and Matthias Stecher
Correlation Between TLP, HMM, and System-Level ESD Pulses for Cu Metallization, Y. Xi, S. Malobabic, V.
Vashchenko, and J. Liou
Capacitive Coupled TLP (CC-TLP) and the Correlation with the CDM, Heinrich Wolf, Horst Gieser, Karlheinz Bock ,
Agha Jahanzeb, Charvaka Duvvury, Yen-Yi Lin
….. (please check for your device and applications)
注意: 1. 标准TLP不提供类似IEC61000-4-2标准脉冲的第一个峰,所以由第一个峰引起的设备故障不能用TLP测试检测
。超快TLP可以提供上升时间短、脉宽窄的矩形脉冲,可用来进行此类测试。
2. 标准TLP是基于50欧姆阻抗的,而其他ESD模型基于不同的阻抗系统,所以设备完全开启之前的电压可能会有很
大不同,从而导致不同的失效类型。
22
41. 公司的成长(2011 to 2013)
ESDEMCTECHNOLOGYLLC
Niche: Solutions by ESD/EMC experts, innovative & flexible, focused
on ESD/EMC design, analysis and debugging
Growth: 2010.09 Business setup in Founder’s home
2011.03 to now Group of 5 professionals
ESDEMC公司地理位置优越,我们与世界顶级EMC学术研究实验室MST EMC为
邻。
About 40% each year
42. ESDEMC Group @ 2012 IEEE EMC Symposium
Oh, I have a
new idea ...
We are
growing … I can do
it …
We can
improvise…
Fredric Stevenson
Business/Technical
Development
Wei Huang
Founder/Owner
Chief Design Engineer
David Pommerenke
Chief Technology
Consultant
Jerry Tichenor
Design Application
Engineer
43. REFERENCES
参考
1. Martin Rodgaard, 2007, ESD – Electrostatic Discharge, Retrieved Jan 13, 2015 from:
http://hibp.ecse.rpi.edu/~connor/education/Surge/Presentations/ESD_mr.pdf
2. ESDA/JEDEC Joint Standard for Electrostatic Discharge Sensitivity Testing - Human Body Model (HBM) – Component Level,
ANSI/ANSI/ESDA/JEDEC JS-001-2010, April 2010.
3. ESD Association Standard Test Method for Electrostatic Discharge Sensitivity Testing - Machine Model – Component Level, ESD
STM5.2-2012, July 2013.
4. ESD Association Standard for Electrostatic Discharge Sensitivity Testing - Charge Device Model (CDM) – Component Level, ESD S5.3.1-
2009, December 2009.
5. International Electrotechnical Commission, Electromagnetic Compatibility (EMC) – Part 4-2: Testing and measurement techniques –
Electrostatic discharge immunity test, IEC 61000-4-2:2008, 2008.
6. ESD Association Standard Practice for Electrostatic Discharge Sensitivity Testing - Human Metal Model (HMM) – Component Level,
ANSI/ESD SP5.6-2009, September 2009.
7. D.C. Wunsch and R.R. Bell, “Determination of Threshold Failure Levels of Semiconductor Diodes and Transistors due to Pulse
Voltages,” IEEE Trans. Nuc. Sci., NS-15, pp. 244-259, 1968.
8. D.J. Bradley, J.F. Higgins, M.H. Key and S. Majumdar, “A Simple Laser-triggered Spark Gap for Kilovolt Pulses of Accurately Variable
Timing,” Opto-Electronics Letters, vol. 1, pp. 62-64, 1969.
9. T.J. Maloney and N. Khurana, “Transmission Line Pulsing Techniques for Circuit Modeling of ESD Phenomena,” 1985 EOS/ESD
Symposium Conference Proceedings, pp. 49 -54, 1985.
10. W. Simburger, “AN 210 Effective ESD Protection Design at System Level Using VF-TLP Characterization Methodology,” Infineon
Application Note 210, Revision 1.3, December 2012.
11. D. Byrd, T. Kugelstadt, 2011, Understanding and Comparing the Differences in ESD Testing, Retrieved Jan 14 2015 from:
http://www.edn.com/design/test-and-measurement/4368466/Understanding-and-comparing-the-differences-in-ESD-testing
43
44. REFERENCESCONT’D
参考 Cont’d
Graph 1 & 2: (n.a.), 2013, How to Select Transient Voltage Suppressors (TVS Diode)?, Retrieved Jan 13 2015 from:
http://www.completepowerelectronics.com/tvs-diode-selection-tutorial/
Graph 3 & 4: D. Byrd, T. Kugelstadt, 2011, Understanding and Comparing the Differences in ESD Testing, Retrieved Jan 14 2015 from:
http://www.edn.com/design/test-and-measurement/4368466/Understanding-and-comparing-the-differences-in-ESD-testing
Graph 5 & 6: Reference 10
Picture 1: Eric Puszczewicz, 2011, Electrostatic Discharge - ESD Basics and Protection, Retrieved Jan 13 2015 from:
http://www.slideshare.net/ericpuszczewicz/esd-basics-by-transforming-technologies
Picture 2: Ron Kurtus, 2015, Static Electricity Sparks, Retrieved Jan 13 2015 from: http://www.school-for-
champions.com/science/static_sparks.htm#.VLU51yvF9MY
Picture 3: K. Vermeer, 2011, Static dissipative ESD footware, Retrieved Jan 15 2015 from:
http://electronics.stackexchange.com/questions/23107/static-dissipative-esd-footware
Picture 4: (n.a.), (n.d.), Anti-Static Design – ESD Protection, Retrieved Jan 15 2015 from:
http://www.ecs.com.tw/ECSWebSite/Product/Product_Detail.aspx?DetailID=1446&MenuID=17&LanID=0
Picture 5: (n.a), 2000, Maxim Leads the Way in ESD Protection, Retrieved Jan 15 2015 from: http://www.maximintegrated.com/en/app-
notes/index.mvp/id/639
Picture 6: T. G. Nagy, (n.d.), Effective ESD Transient Voltage Surge Suppression in New, High Speed Circuits, Retrieved Jan 15 2015 from:
http://www.compliance-club.com/archive/old_archive/020930.htm
Picture 7: P. Yu, 2010, Component Failure Analysis – Hermetic Packaging, Retrieved Jan 15 2015 from:
http://www.empf.org/empfasis/2010/Apr10/help-410.html
Picture 8: P. Corr, 2014, Laser Diodes: Laser diode operation 101: A user’s guide, Retrieved Jan 15 2015 from:
http://www.laserfocusworld.com/articles/print/volume-50/issue-03/features/laser-diodes-laser-diode-operation-101-a-user-s-
guide.html
Picture 9: S. Pefhany, 2014, FET Electrostatic Damage, Retrieved Jan 15 2015 from:
http://electronics.stackexchange.com/questions/97605/fet-electrostatic-damage
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