This document discusses research into doping nano diamonds with nitrogen to create nitrogen-vacancy (NV) centers. The goal is to manipulate the electron spin of these centers to store and process information faster than modern transistors. Nano diamonds were grown using a hot filament chemical vapor deposition system and doped with varying amounts of nitrogen. Confocal microscopy was unable to conclusively identify any NV centers. Further spectroscopy analysis showed broad peaks rather than the distinct peak expected for NV centers, indicating the presence of defects but not confirmation of doping. The research aims to optimize the doping process to successfully create NV centers in nano diamonds.