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International INTERNATIONAL Journal of Electronics and JOURNAL Communication OF Engineering ELECTRONICS & Technology (IJECET), AND 
ISSN 0976 
– 6464(Print), ISSN 0976 – 6472(Online), Volume 5, Issue 7, July (2014), pp. 63-71 © IAEME 
COMMUNICATION ENGINEERING  TECHNOLOGY (IJECET) 
ISSN 0976 – 6464(Print) 
ISSN 0976 – 6472(Online) 
Volume 5, Issue 7, July (2014), pp. 63-71 
© IAEME: http://www.iaeme.com/IJECET.asp 
Journal Impact Factor (2014): 7.2836 (Calculated by GISI) 
www.jifactor.com 
IJECET 
© I A E M E 
DESIGN OF A TWO STAGE DIFFERENTIAL LOW NOISE AMPLIFIER 
FOR UWB APPLICATIONS 
Neeraj Malviya, R.S Gamad 
Department of Electronics and Instrumentation Engineering, 
SGSITS Indore, (M.P), India 
63 
ABSTRACT 
This paper reports a design of a two stage differential LNA for Ultra-wideband (UWB) 
applications. Design is consisted with a simple two stage with noise improvement technique. The 
first stage is utilizing a resistive current through reuse and dual inductive degenerated technique to 
attend a wideband input matching. Second stage is used as a common source amplifier with inductive 
peaking technique to generate a response of flat power gain. Best simulation result are obtained that 
is maximum power gain is 20.30 dBs, noise figure of 2.8 to 4.5 dBs, High reverse isolation of -45 dB 
is obtain with good linearity that is IIP3 = -3.76dbm. 
Keywords: Ultra Wide Band, Low Noise Amplifier, Noise Figure, Linearity, Reverse Isolation, 
Inductive Degeneration. 
INTRODUCTION 
Now a days ultra wide frequency band is being mostly used in commercial application and 
becoming great area of interest for wireless communication engineers. The need for low power and 
high-throughput wireless communication systems has grown exponentially in the last few years. 
UWB technology has attracted immense interest from the research and industry communities because 
of its high data rate, robustness against multipath fading and low power dissipation. This technology 
provides high-bandwidth wireless link for the transmission of audio, video and high speed data. 
Frequency bands from 0 to 960 MHz (subgigahertz band) and from 3.1 to 10.6 GHz are allocated by 
FCC for UWB communication respectively, for medium range less than 100 m low throughput and 
short range less than 10m high-through- put (1GBPS) data. By definition, an UWB radio signal is 
expected to have a fractional bandwidth greater than 20% or a bandwidth of at least 500MHz 
[1-3]. This ultra-wide channel bandwidth B allows high channel capacity C, enabling data transfer at 
a very high rate, while, keeping the transmitted signal-to-noise ratio (SNR) to a minimum.
International Journal of Electronics and Communication Engineering  Technology (IJECET), ISSN 0976 
– 6464(Print), ISSN 0976 – 6472(Online), Volume 5, Issue 7, July (2014), pp. 63-71 © IAEME 
Since it is a first block of receiver so it should be able to catch sufficient amount of signal and 
also able to amplify largely over desire or constant bandwidth and deliver sufficient amount to load 
with addition of as minimum noise as possible. The ability to catch and deliver sufficient amount of 
signal is totally depend on input and output load matching that is S11 and S22, addition of noise is 
inherent property of devices, so it can be reduced only. The design of LNA is quiet difficult and 
creates a large problem. In recent years much research have been done on designing of LNA such as 
distributed amplifier, filter matching network amplifier, and current reuse amplifier. From all the 
topology they have their own advantages and disadvantages for example the distributed amplifier 
provide large gain over high bandwidth but has large power consumption similarly in folded cascode 
topology it require high area high power consumption but give low noise figure [4-5]. The cascode 
topology of LNA design will able to provide large gain as well good noise figure and having good 
resistance against third order non linearity. In the same topology if current is feedback through 
resistor then it becomes resistive feedback topology and it will able to provide good gain and good 
linearity when the same topology, we use differentially, we get minimum noise figure at moderate 
gain and moderate linearity [7-8]. Now it is clear that the design of RF-CMOSLNAs, the key 
performance parameters are power-gain, noise figure (NF) and linearity besides the stability and 
isolation. The goal of LNA design is to achieve maximum power-gain and minimum NF 
simultaneously at any given amount of power dissipation with good linearity. 
Proposed Design: 
Since we are using cascode topology which involves common gate followed by common 
source to design UWB LNA as it is able to provide high gain with good linearity and better noise 
figure. Along with this topology authors have used a feedback resistor to get even better gain, noise 
figure and input reflection coefficient. As shown in fig2. To avoid degradation in input impedance 
and the -3db bandwidth at high frequency to overcome this problem, source degeneration that is 
inductors are used to tune out parasitic capacitances at partial sides. 
Figure 1: simple current reuse topology 
64
International Journal of Electronics and Communication Engineering  Technology (IJECET), ISSN 0976 
– 6464(Print), ISSN 0976 – 6472(Online), Volume 5, Issue 7, July (2014), pp. 63-71 © IAEME 
Figure 2: Simple current reuse topology with resistor feedback 
There are several techniques to increase third order input intercept point in order to get high 
linearity such as MGTR Technique which involves two transistor connected back to back in parallel. 
From these transistor one is operated in weak inversion region while the other is operated in strong 
inversion region so that, they produce negative and positive third order frequency terms, and they can 
be cancel out easily and improvement will obtained in linearity[9]. Another technique, which 
involves Q-factor at the input side, to increase and get better linearity in the same way with 
adjustment of overdrive voltage (vgs-vth) of input MOS [10].Such a way the another technique is very 
simple which involves transconductance of transistor directly, in this if increases the 
transconductance then in proportionate gain will increase but linearity got degraded. if decrease the 
gain, third order input intercept point will improved and due to this overall linearity will improved 
[11]. 
The overall gain of single ended LNAis given as: 
Av = (gmn + gmp)(rf // rdsn//rdsp//zin2). (1) 
Clearly the overall gain depend on sum of transconductance of two transistor and is directly 
proportional to it. 
The overall transconductance can be determine as: 
Gm,tot = {gmn/(1+jlgmn)} + {gmp/(1+jlgmp)} (2) 
noise figure of single ended LNA is given by [12] : 
2+rs 
65 
NF = 1+(2/3)(The noise 1/(gmn + gmp) rs)((rf 
2)/rsrf 
2 ) + 2/3(gmn + gmp)rs(f/ft)2 + rs/rf (3)
International Journal of Electronics and Communication Engineering  Technology (IJECET), ISSN 0976 
– 6464(Print), ISSN 0976 – 6472(Online), Volume 5, Issue 7, July (2014), pp. 63-71 © IAEME 
If increase the transconductance the overall gain will increases and due to this noise figure 
decrease. the value of transconduction is depend on W/L ratio [13-15] and its mathematical 
expression is as follows: 
Gm = UnCox (W/l)(vgs - vth) (4) 
As per the requirement authors have decrease the width of transistor to improve the linearity 
of LNA. And for maintaining noise figure authors have connected differentially. 
To overcome the problem of noise we use Differential circuits and these are an important part 
of integrated circuit design because they offer several important advantages over single-ended 
circuits. The significant and relevant benefit of using a differential circuit is noise reduction. 
Differential LNA can restrain common mode interference, so the noise of source voltage and 
underlay voltage can also be restrained. The schematic view of the proposed design is given in 
figure 3. 
Figure 3: Proposed design of LNA 
66 
Simulation Results 
The proposed design is simulated over Cadence spectra, 0.18μm CMOS technology with 
1.8V supply voltage. The simulated results are obtained and compared with earlier work, as shown in 
table 1. As per reported results it is found that the proposed circuit has reliable Voltage gain 
(maximum S2,1) of 20.37dbs, Reverse Isolation is less than -43dbs, better Linearity shown in IIP3 is - 
3.36dbm with input and output matching is -20dbs and -1.75dbs respectively. After applying 
differential technique, the improved Noise figure is obtained in the range of (3.12 to 4.12db) and 
their graphs are given in figure 4,5,6,7,8 and 9 respectively.
International Journal of Electronics and Communication Engineering  Technology (IJECET), ISSN 0976 
– 6464(Print), ISSN 0976 – 6472(Online), Volume 5, Issue 7, July (2014), pp. 63-71 © IAEME 
Figure 4: Voltage gain (S21) 
Figure 5: Reverse Voltage gain (S12) 
67
International Journal of Electronics and Communication Engineering  Technology (IJECET), ISSN 0976 
– 6464(Print), ISSN 0976 – 6472(Online), Volume 5, Issue 7, July (2014), pp. 63-71 © IAEME 
Figure 6: Third order input intercept point (IIP3) 
Figure 7: Input reflection coefficient (s11) 
68
International Journal of Electronics and Communication Engineering  Technology (IJECET), ISSN 0976 
– 6464(Print), ISSN 0976 – 6472(Online), Volume 5, Issue 7, July (2014), pp. 63-71 © IAEME 
Figure 8: Output reflection coefficient (S22) 
Figure 9: Noise figure (NF) 
69
International Journal of Electronics and Communication Engineering  Technology (IJECET), ISSN 0976 
– 6464(Print), ISSN 0976 – 6472(Online), Volume 5, Issue 7, July (2014), pp. 63-71 © IAEME 
Table 1: Comparison of the proposed results with earlier similar reported work 
Specification [12] [8] [11] This work 
Technology(μm) .18 .18 .18 .18 
Frequency(GHz) 3.1 to 10.6 0.4 to 1.0 3.1 to 10.6 3.1 to 10 
Input return loss(s11) -10 -12.3 -11db -12.5 
Voltage gain(s21) 15.25 20.57 15 20.37 
Reverse isolation(s12) -45 -23 -38 -43 
Output return loss(s22) -10 -5.0 -8db -3.5 
Supply voltage 1.5 1.8 1.8 1.8 
Noise figure 2.8-4.7 1.6 to 3.5 3.5 to 3.9db 2.5 to 4.507 
IIP3 -7 -3.8 6.4dbm -3.30db @ 6 and 
70 
6.1GHz 
Power dissipation(mw) 14.3 14.03 16.2 22 
CONCLUSION 
This design employs current reuse technique with resistor feedback and source degeneration, 
the input is given differentially and similarly the output is taken, in order to obtained high gain, high 
linearity and minimum noise figure. The proposed design of Low Noise Amplifier is successfully 
extended to UWB application as per the result obtained, as shown in table 1. It is observed that this 
design is well suited for UWB application. 
ACKNOWLEDGEMENT 
This work has been carried out in SMDP VLSI laboratory of the Electronics and 
Instrumentation Engineering Department of, Shri G.S. Institute of Technology and Science, Indore, 
India. This SMDP VLSI project is funded by Ministry of Information and Communication 
Technology, Government of India. Authors are thankful to the Ministry for facilities provided under 
this project. 
REFERENCES 
[1] Muhammad Khurram and S.M. Rezaul Hasan, “Novel analysis and optimization of gm-boosted 
common-gate UWB LNA”, Microelectronics Journal, vol. 42pp. 253–264, November 
2011. 
[2] C.P. Chang and W.-C. Chien et al., “Linearity Improvement of Cascode CMOS LNA using a 
diode connected NMOS transistor with a parallel RC circuit”, Progress in Electromagnetics 
Research C, Vol. 17, pp 29-38, 2010. 
[3] H.L. Kao, K.C. Chang et al., “Very low-power CMOS LNA for UWB wireless receiver using 
current reuse topology”. Solid-state electronics journal vol. 52, September 2007. 
[4] Jigisha Sureja and Jagdishoza, “A 0.1 to 3GHz low power cascade LNA using 180nm 
technology”. First conference on emerging technology trends in electronic, communication 
and technology. 2012 
[5] Yuh-Shyan Hwang, San-FuWang, Shou-ChungYan and Jiann-JongChen, “An inductorless 
wideband noise-cancelling CMOS low noise amplifier with variable-gain technique for DTV 
tuner application”.
International Journal of Electronics and Communication Engineering  Technology (IJECET), ISSN 0976 
– 6464(Print), ISSN 0976 – 6472(Online), Volume 5, Issue 7, July (2014), pp. 63-71 © IAEME 
[6] Abdelhalim Slimane, M. Trabelsi and M.T. Belaroussi et al., “A 0.9-V, 7-mW UWB LNA for 
3.1–10.6-GHz wireless applications in 0.18-μm CMOS technology”, Microelectronics 
Journal vol. 42 august 2011. 
[7] S. Toofan, A.R. Rahmati A. Abrishamifar, G. Roientan Lahiji et al., “Low power and high 
gain current reuse LNA with modified input matching and inter-stage inductors” 
Microelectronics Journal vol. 39, pp. 1534-1537, September 2008. 
[8] Vikas Kumar and R.S Gamad, “Design of broadband LNA using ffp. technique”, vol. 2, 
71 
pp.12-17, May 2013. 
[9] Fadi Riad Shahroury, Chung-Yu Wu et al. A 1-V RF-CMOS LNA design utilizing the 
technique of capacitive feedback matching network, INTEGRATION, the VLSI journal vol. 
42, pp.83-88, September 2008. 
[10] Somesh Kumar and Kuldeepak, A 0.18μm and 2GHz CMOS Differential Low Noise 
Amplifier, International Journal of Electronics Communication and Computer Technology 
(IJECCT) Volume 2 Issue 4, July 2012. 
[11] A.I.I Galal, R. Pokharel, H. Kanaya, K. Yoshida, et al., “High linearity technique for ultra-wideband 
low noise amplifier in 0.18μm cmos technology”, int. j. electron. Communication 
(AEU) vol. 66, pp. 12-17. May 2011. 
[12] quizhen wan, chunhua wang, “Design of 3.1-10.6 GHz ultra-wideband CMOS low noise 
amplifier with current reuse technique” Int. j. electron. commun. (AEU) journal, vol. 65, 
pp. 1006-1011, September 2011. 
[13] B. Razavi, RF Microelectronic, Englewood Cliffs, NJ: Prientce-Hall, 1997. 
[14] RF Circuit Design, theory and application, reinhold Ludwig and pavel bretchko. 
[15] CMOS Analog Circuit design, Second edition, by phillip E.Allen and Douglas m. Houlberg. 
AUTHOR’S DETAIL 
Neeraj Malviya was born in 1989. He receives B.Eng. degree in electronics and 
communication engineering from Acropolis institute of technology and research, 
Indore, Madhya Pradesh, India in 2012. Currently he is pursuing M.Tech. degree 
from S.G.S.I.T.S Indore, Madhya Pradesh, India. His current research interest are 
low power and low noise LNAs. 
R.S Gamad receives his B.E. degree in Electronics and Communication 
Engineering from Government Engineering college, Ujjain, Madhya Pradesh, 
India in 1995 and M.E. in Digital Techniques and Instruments from S.G.S.I.T.S, 
Indore, Madhya Pradesh, India in 2003 and Ph.D. dynamic testing of an A/D 
converter in 2010 from RGPV Bhopal, Technical university of Madhya Pradesh, 
India. He worked as Assistant professor in Govt. engineering college, Ujjain, 
Madhya Pradesh from 1999-2006. He is currently working as Associate professor 
in department of Electronics and Instrumentation Engineering, S.G.S.I.T.S, 
Indore, Madhya Pradesh, India. His field of specialisation is data converter, ADC design- testing, 
image processing and mixed signal VLSI design. He is actively participates in SMDP project in 
VLSI, a project funded by Ministry of Information and Communication Technology, Govt. of India. 
He has teaching experience of over 16 years at under graduate level and 9 year at post graduate 
level. He is associated with many professional societies. He is life member of Institution of 
Engineers (IE) and IETE.

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Design of a two stage differential low noise amplifier for uwb applications

  • 1. International INTERNATIONAL Journal of Electronics and JOURNAL Communication OF Engineering ELECTRONICS & Technology (IJECET), AND ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online), Volume 5, Issue 7, July (2014), pp. 63-71 © IAEME COMMUNICATION ENGINEERING TECHNOLOGY (IJECET) ISSN 0976 – 6464(Print) ISSN 0976 – 6472(Online) Volume 5, Issue 7, July (2014), pp. 63-71 © IAEME: http://www.iaeme.com/IJECET.asp Journal Impact Factor (2014): 7.2836 (Calculated by GISI) www.jifactor.com IJECET © I A E M E DESIGN OF A TWO STAGE DIFFERENTIAL LOW NOISE AMPLIFIER FOR UWB APPLICATIONS Neeraj Malviya, R.S Gamad Department of Electronics and Instrumentation Engineering, SGSITS Indore, (M.P), India 63 ABSTRACT This paper reports a design of a two stage differential LNA for Ultra-wideband (UWB) applications. Design is consisted with a simple two stage with noise improvement technique. The first stage is utilizing a resistive current through reuse and dual inductive degenerated technique to attend a wideband input matching. Second stage is used as a common source amplifier with inductive peaking technique to generate a response of flat power gain. Best simulation result are obtained that is maximum power gain is 20.30 dBs, noise figure of 2.8 to 4.5 dBs, High reverse isolation of -45 dB is obtain with good linearity that is IIP3 = -3.76dbm. Keywords: Ultra Wide Band, Low Noise Amplifier, Noise Figure, Linearity, Reverse Isolation, Inductive Degeneration. INTRODUCTION Now a days ultra wide frequency band is being mostly used in commercial application and becoming great area of interest for wireless communication engineers. The need for low power and high-throughput wireless communication systems has grown exponentially in the last few years. UWB technology has attracted immense interest from the research and industry communities because of its high data rate, robustness against multipath fading and low power dissipation. This technology provides high-bandwidth wireless link for the transmission of audio, video and high speed data. Frequency bands from 0 to 960 MHz (subgigahertz band) and from 3.1 to 10.6 GHz are allocated by FCC for UWB communication respectively, for medium range less than 100 m low throughput and short range less than 10m high-through- put (1GBPS) data. By definition, an UWB radio signal is expected to have a fractional bandwidth greater than 20% or a bandwidth of at least 500MHz [1-3]. This ultra-wide channel bandwidth B allows high channel capacity C, enabling data transfer at a very high rate, while, keeping the transmitted signal-to-noise ratio (SNR) to a minimum.
  • 2. International Journal of Electronics and Communication Engineering Technology (IJECET), ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online), Volume 5, Issue 7, July (2014), pp. 63-71 © IAEME Since it is a first block of receiver so it should be able to catch sufficient amount of signal and also able to amplify largely over desire or constant bandwidth and deliver sufficient amount to load with addition of as minimum noise as possible. The ability to catch and deliver sufficient amount of signal is totally depend on input and output load matching that is S11 and S22, addition of noise is inherent property of devices, so it can be reduced only. The design of LNA is quiet difficult and creates a large problem. In recent years much research have been done on designing of LNA such as distributed amplifier, filter matching network amplifier, and current reuse amplifier. From all the topology they have their own advantages and disadvantages for example the distributed amplifier provide large gain over high bandwidth but has large power consumption similarly in folded cascode topology it require high area high power consumption but give low noise figure [4-5]. The cascode topology of LNA design will able to provide large gain as well good noise figure and having good resistance against third order non linearity. In the same topology if current is feedback through resistor then it becomes resistive feedback topology and it will able to provide good gain and good linearity when the same topology, we use differentially, we get minimum noise figure at moderate gain and moderate linearity [7-8]. Now it is clear that the design of RF-CMOSLNAs, the key performance parameters are power-gain, noise figure (NF) and linearity besides the stability and isolation. The goal of LNA design is to achieve maximum power-gain and minimum NF simultaneously at any given amount of power dissipation with good linearity. Proposed Design: Since we are using cascode topology which involves common gate followed by common source to design UWB LNA as it is able to provide high gain with good linearity and better noise figure. Along with this topology authors have used a feedback resistor to get even better gain, noise figure and input reflection coefficient. As shown in fig2. To avoid degradation in input impedance and the -3db bandwidth at high frequency to overcome this problem, source degeneration that is inductors are used to tune out parasitic capacitances at partial sides. Figure 1: simple current reuse topology 64
  • 3. International Journal of Electronics and Communication Engineering Technology (IJECET), ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online), Volume 5, Issue 7, July (2014), pp. 63-71 © IAEME Figure 2: Simple current reuse topology with resistor feedback There are several techniques to increase third order input intercept point in order to get high linearity such as MGTR Technique which involves two transistor connected back to back in parallel. From these transistor one is operated in weak inversion region while the other is operated in strong inversion region so that, they produce negative and positive third order frequency terms, and they can be cancel out easily and improvement will obtained in linearity[9]. Another technique, which involves Q-factor at the input side, to increase and get better linearity in the same way with adjustment of overdrive voltage (vgs-vth) of input MOS [10].Such a way the another technique is very simple which involves transconductance of transistor directly, in this if increases the transconductance then in proportionate gain will increase but linearity got degraded. if decrease the gain, third order input intercept point will improved and due to this overall linearity will improved [11]. The overall gain of single ended LNAis given as: Av = (gmn + gmp)(rf // rdsn//rdsp//zin2). (1) Clearly the overall gain depend on sum of transconductance of two transistor and is directly proportional to it. The overall transconductance can be determine as: Gm,tot = {gmn/(1+jlgmn)} + {gmp/(1+jlgmp)} (2) noise figure of single ended LNA is given by [12] : 2+rs 65 NF = 1+(2/3)(The noise 1/(gmn + gmp) rs)((rf 2)/rsrf 2 ) + 2/3(gmn + gmp)rs(f/ft)2 + rs/rf (3)
  • 4. International Journal of Electronics and Communication Engineering Technology (IJECET), ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online), Volume 5, Issue 7, July (2014), pp. 63-71 © IAEME If increase the transconductance the overall gain will increases and due to this noise figure decrease. the value of transconduction is depend on W/L ratio [13-15] and its mathematical expression is as follows: Gm = UnCox (W/l)(vgs - vth) (4) As per the requirement authors have decrease the width of transistor to improve the linearity of LNA. And for maintaining noise figure authors have connected differentially. To overcome the problem of noise we use Differential circuits and these are an important part of integrated circuit design because they offer several important advantages over single-ended circuits. The significant and relevant benefit of using a differential circuit is noise reduction. Differential LNA can restrain common mode interference, so the noise of source voltage and underlay voltage can also be restrained. The schematic view of the proposed design is given in figure 3. Figure 3: Proposed design of LNA 66 Simulation Results The proposed design is simulated over Cadence spectra, 0.18μm CMOS technology with 1.8V supply voltage. The simulated results are obtained and compared with earlier work, as shown in table 1. As per reported results it is found that the proposed circuit has reliable Voltage gain (maximum S2,1) of 20.37dbs, Reverse Isolation is less than -43dbs, better Linearity shown in IIP3 is - 3.36dbm with input and output matching is -20dbs and -1.75dbs respectively. After applying differential technique, the improved Noise figure is obtained in the range of (3.12 to 4.12db) and their graphs are given in figure 4,5,6,7,8 and 9 respectively.
  • 5. International Journal of Electronics and Communication Engineering Technology (IJECET), ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online), Volume 5, Issue 7, July (2014), pp. 63-71 © IAEME Figure 4: Voltage gain (S21) Figure 5: Reverse Voltage gain (S12) 67
  • 6. International Journal of Electronics and Communication Engineering Technology (IJECET), ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online), Volume 5, Issue 7, July (2014), pp. 63-71 © IAEME Figure 6: Third order input intercept point (IIP3) Figure 7: Input reflection coefficient (s11) 68
  • 7. International Journal of Electronics and Communication Engineering Technology (IJECET), ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online), Volume 5, Issue 7, July (2014), pp. 63-71 © IAEME Figure 8: Output reflection coefficient (S22) Figure 9: Noise figure (NF) 69
  • 8. International Journal of Electronics and Communication Engineering Technology (IJECET), ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online), Volume 5, Issue 7, July (2014), pp. 63-71 © IAEME Table 1: Comparison of the proposed results with earlier similar reported work Specification [12] [8] [11] This work Technology(μm) .18 .18 .18 .18 Frequency(GHz) 3.1 to 10.6 0.4 to 1.0 3.1 to 10.6 3.1 to 10 Input return loss(s11) -10 -12.3 -11db -12.5 Voltage gain(s21) 15.25 20.57 15 20.37 Reverse isolation(s12) -45 -23 -38 -43 Output return loss(s22) -10 -5.0 -8db -3.5 Supply voltage 1.5 1.8 1.8 1.8 Noise figure 2.8-4.7 1.6 to 3.5 3.5 to 3.9db 2.5 to 4.507 IIP3 -7 -3.8 6.4dbm -3.30db @ 6 and 70 6.1GHz Power dissipation(mw) 14.3 14.03 16.2 22 CONCLUSION This design employs current reuse technique with resistor feedback and source degeneration, the input is given differentially and similarly the output is taken, in order to obtained high gain, high linearity and minimum noise figure. The proposed design of Low Noise Amplifier is successfully extended to UWB application as per the result obtained, as shown in table 1. It is observed that this design is well suited for UWB application. ACKNOWLEDGEMENT This work has been carried out in SMDP VLSI laboratory of the Electronics and Instrumentation Engineering Department of, Shri G.S. Institute of Technology and Science, Indore, India. This SMDP VLSI project is funded by Ministry of Information and Communication Technology, Government of India. Authors are thankful to the Ministry for facilities provided under this project. REFERENCES [1] Muhammad Khurram and S.M. Rezaul Hasan, “Novel analysis and optimization of gm-boosted common-gate UWB LNA”, Microelectronics Journal, vol. 42pp. 253–264, November 2011. [2] C.P. Chang and W.-C. Chien et al., “Linearity Improvement of Cascode CMOS LNA using a diode connected NMOS transistor with a parallel RC circuit”, Progress in Electromagnetics Research C, Vol. 17, pp 29-38, 2010. [3] H.L. Kao, K.C. Chang et al., “Very low-power CMOS LNA for UWB wireless receiver using current reuse topology”. Solid-state electronics journal vol. 52, September 2007. [4] Jigisha Sureja and Jagdishoza, “A 0.1 to 3GHz low power cascade LNA using 180nm technology”. First conference on emerging technology trends in electronic, communication and technology. 2012 [5] Yuh-Shyan Hwang, San-FuWang, Shou-ChungYan and Jiann-JongChen, “An inductorless wideband noise-cancelling CMOS low noise amplifier with variable-gain technique for DTV tuner application”.
  • 9. International Journal of Electronics and Communication Engineering Technology (IJECET), ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online), Volume 5, Issue 7, July (2014), pp. 63-71 © IAEME [6] Abdelhalim Slimane, M. Trabelsi and M.T. Belaroussi et al., “A 0.9-V, 7-mW UWB LNA for 3.1–10.6-GHz wireless applications in 0.18-μm CMOS technology”, Microelectronics Journal vol. 42 august 2011. [7] S. Toofan, A.R. Rahmati A. Abrishamifar, G. Roientan Lahiji et al., “Low power and high gain current reuse LNA with modified input matching and inter-stage inductors” Microelectronics Journal vol. 39, pp. 1534-1537, September 2008. [8] Vikas Kumar and R.S Gamad, “Design of broadband LNA using ffp. technique”, vol. 2, 71 pp.12-17, May 2013. [9] Fadi Riad Shahroury, Chung-Yu Wu et al. A 1-V RF-CMOS LNA design utilizing the technique of capacitive feedback matching network, INTEGRATION, the VLSI journal vol. 42, pp.83-88, September 2008. [10] Somesh Kumar and Kuldeepak, A 0.18μm and 2GHz CMOS Differential Low Noise Amplifier, International Journal of Electronics Communication and Computer Technology (IJECCT) Volume 2 Issue 4, July 2012. [11] A.I.I Galal, R. Pokharel, H. Kanaya, K. Yoshida, et al., “High linearity technique for ultra-wideband low noise amplifier in 0.18μm cmos technology”, int. j. electron. Communication (AEU) vol. 66, pp. 12-17. May 2011. [12] quizhen wan, chunhua wang, “Design of 3.1-10.6 GHz ultra-wideband CMOS low noise amplifier with current reuse technique” Int. j. electron. commun. (AEU) journal, vol. 65, pp. 1006-1011, September 2011. [13] B. Razavi, RF Microelectronic, Englewood Cliffs, NJ: Prientce-Hall, 1997. [14] RF Circuit Design, theory and application, reinhold Ludwig and pavel bretchko. [15] CMOS Analog Circuit design, Second edition, by phillip E.Allen and Douglas m. Houlberg. AUTHOR’S DETAIL Neeraj Malviya was born in 1989. He receives B.Eng. degree in electronics and communication engineering from Acropolis institute of technology and research, Indore, Madhya Pradesh, India in 2012. Currently he is pursuing M.Tech. degree from S.G.S.I.T.S Indore, Madhya Pradesh, India. His current research interest are low power and low noise LNAs. R.S Gamad receives his B.E. degree in Electronics and Communication Engineering from Government Engineering college, Ujjain, Madhya Pradesh, India in 1995 and M.E. in Digital Techniques and Instruments from S.G.S.I.T.S, Indore, Madhya Pradesh, India in 2003 and Ph.D. dynamic testing of an A/D converter in 2010 from RGPV Bhopal, Technical university of Madhya Pradesh, India. He worked as Assistant professor in Govt. engineering college, Ujjain, Madhya Pradesh from 1999-2006. He is currently working as Associate professor in department of Electronics and Instrumentation Engineering, S.G.S.I.T.S, Indore, Madhya Pradesh, India. His field of specialisation is data converter, ADC design- testing, image processing and mixed signal VLSI design. He is actively participates in SMDP project in VLSI, a project funded by Ministry of Information and Communication Technology, Govt. of India. He has teaching experience of over 16 years at under graduate level and 9 year at post graduate level. He is associated with many professional societies. He is life member of Institution of Engineers (IE) and IETE.