SPICE MODEL of XBS104S14R (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS:
DIODE/ SCHOTTKY RECTIFIER / PROFESSIONAL
PART NUMBER: XBS104S14R
MANUFACTURER: TOREX SEMICONDUCTOR
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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2. PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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3. Forward Current Characteristic
Circuit Simulation Result
1.0A
100mA
10mA
1.0mA
0V 200mV 400mV 600mV
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc XBS104S14R_P
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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4. Comparison Graph
Circuit Simulation Result
1
Measurement
Forward Current:IF (A) Simulation
0.1
0.01
0.001
0 0.2 0.4 0.6
Forward Voltage:VF (V)
Simulation Result
VF (V)
IF (A) %Error
Measurement Simulation
0.001 0.215 0.215 0.03
0.002 0.234 0.233 -0.37
0.005 0.258 0.257 -0.33
0.01 0.275 0.275 0.16
0.02 0.293 0.294 0.43
0.05 0.320 0.321 0.28
0.1 0.345 0.343 -0.56
0.2 0.370 0.370 0.00
0.5 0.423 0.420 -0.71
1 0.480 0.482 0.34
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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5. Capacitance Characteristic
Circuit Simulation Result
200p
150p
100p
50p
0
0V 10V 20V 30V 40V
I(V2)/(45V/10n)
V(N16610)
Evaluation Circuit
V2
0Vdc
V2 = 45 V1 U1
V1 = 0 XBS104S14R_P
TD = 0
TR = 10ns
TF = 10ns
PW = 10us
PER = 50us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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6. Comparison Graph
Circuit Simulation Result
200
Measurement
Simulation
Inter-Terminal Capacity:Ct (pF)
150
100
50
0
0 10 20 30 40
Reverse Voltage:VR(V)
Simulation Result
Ct (pF)
VR (V) %Error
Measurement Simulation
1 80.000 81.335 1.67
2 62.500 63.877 2.20
5 45.000 44.520 -1.07
10 33.500 33.184 -0.94
20 24.500 24.512 0.05
30 20.400 20.518 0.58
40 18.000 18.048 0.27
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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7. Reverse Recovery Characteristic
Circuit Simulation Result
20mA
10mA
0A
-10mA
-20mA
1.80us 1.88us 1.96us 2.04us 2.12us 2.20us
I(R1)
Time
Evaluation Circuit
R1
100
V2 = 1.27V
V1 = -0.74V
TD = 3.0ns V1 U1
TR = 1.5ns XBS104S14R_P
PW = 2us
TF = 1.0ns
PER = 50us
0
Compare Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trr ns 25.000 25.092 0.37
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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8. Reverse Characteristic
Circuit Simulation Result
100uA
0
10uA
1.0uA
100nA
0V 10V 20V 30V 40V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc XBS104S14R_P
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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9. Comparison Graph
Circuit Simulation Result
10000.00
Measurement
Simulation
1000.00
Reverse Current:IR (uA)
100.00
10.00
1.00
0.10
0 10 20 30 40
Reverse Voltage:VR (V)
Simulation Result
IR (uA)
VR (V) %Error
Measurement Simulation
1.00 0.500 0.493 -1.41
2.00 0.552 0.554 0.34
5.00 0.700 0.709 1.21
10.00 0.900 0.907 0.76
20.00 1.355 1.343 -0.92
30.00 2.300 2.313 0.56
40.00 4.400 4.396 -0.09
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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