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SPICE MODEL of MCR22-8 in SPICE PARK

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Tsuyoshi Horigome
Tsuyoshi Horigome

SPICE MODEL of MCR22-8 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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Device Modeling Report COMPONENTS:THYRISTOR PART NUMBER:MCR22-8 MANUFACTURER: MOTOROLA SEMICONDUCTOR Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
DIODE MODEL Pspice model Model description Parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
IG-VT Characteristic Evaluation Circuit Simulation result Simulation Comparison Table Measurement Simulation % Error IGT ( uA) 30 30.238 0.79333 VGT (V) 0.8(max) 0.771116 -3.61050 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
ITM-VTM Characteristic Evaluation Circuit Simulation result Simulation Comparison Table At ITM=1A Measurement Simulation % Error VTM(V) 1.2 1.1994 -0.05000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Holding Characteristic (IH) Evaluation Circuit Simulation result Simulation Comparison Table VAK=12V Measurement Simulation % Error IH(mA) 2 2.0249 1.24500 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

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SPICE MODEL of MCR22-8 in SPICE PARK

  • 1. Device Modeling Report COMPONENTS:THYRISTOR PART NUMBER:MCR22-8 MANUFACTURER: MOTOROLA SEMICONDUCTOR Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 2. DIODE MODEL Pspice model Model description Parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 3. IG-VT Characteristic Evaluation Circuit Simulation result Simulation Comparison Table Measurement Simulation % Error IGT ( uA) 30 30.238 0.79333 VGT (V) 0.8(max) 0.771116 -3.61050 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 4. ITM-VTM Characteristic Evaluation Circuit Simulation result Simulation Comparison Table At ITM=1A Measurement Simulation % Error VTM(V) 1.2 1.1994 -0.05000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 5. Holding Characteristic (IH) Evaluation Circuit Simulation result Simulation Comparison Table VAK=12V Measurement Simulation % Error IH(mA) 2 2.0249 1.24500 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004