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CAMELLIA INSTITUTE OF TECHNOLOGY
Name-Diya Mondal
Roll no-23001622036
Reg no-222300120155
Subject-Power Electronics
Sub code - PC EE 504
TOPIC - POWER MOSFET
Symbol and Structure
▪︎
The MOSFET (Metal Oxide Semiconductor Field Effect
Transistor) transistor is a semiconductor device which is
widely used for switching and amplifying electronic
signals in the electronic devices MOSFET is a four
terminal device
•Source(S)
•Gate (G)
• Drain (D)
•Body (B)
Types
• MOSFETs are available in two basic forms
• P-Channel
• N-Channel
• Depletion Type: The transistor requires the Gate-Source voltage
(VGs) to switch the device "OFF". The depletion mode MOSFET
is equivalent to a "Normally Closed" switch.
• Enhancement Type: The transistor requires a Gate-Source
voltage(VGs) to switch the device "ON". The enhancement
mode MOSFET is equivalent to a "Normally Open" switch.
P-Channel MOSFET
N-Channel MOSFET
MOSFET Characteristics
• MOSFETs are tri-terminal, unipolar, voltage-controlled device which
form an integral part of vast variety of electronic circuits.
• These devices can be classified into two types Depletion-type
Enhancement-type
MOSFET exhibits three operating regions
Cut-Off Region
• Cut-off region is a region in which the MOSFET will be OFF as there
will be no current flow through it. In this region, MOSFET behaves
like an open switch and is thus used when they are required to
function as electronic switches
Ohmic or Linear Region
• Ohmic or linear region is a region where in the current los increases
with an increase in the value of Vos
Saturation Region
• In saturation region device will act like a closed switch through
which a saturated value of los flows.
• As a result, this operating region is chosen whenever MOSFETs
are required to perform switching operations.
▪︎
Transfer characteristics (drain-to-source current Ips versus
gate-to-source voltage Ves) of n-channel Enhancement-type
MOSFET .
▪︎
Current through the device will be zero until the Vos exceeds
the value threshold voltage VT.
▪︎
U
n
d
e
r
t
h
i
s
c
o
n
d
i
t
i
on, even an increase in Vos will result in no current flow
▪︎
Once Vos crosses V, the current through the device increases
with an increase in Ips initially (Ohmic region) and then
saturates to a value as determined by the VGs (saturation
region of operation).
THANK YOU

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23001622036-PC-EE-504 (1).pptx

  • 1. CAMELLIA INSTITUTE OF TECHNOLOGY Name-Diya Mondal Roll no-23001622036 Reg no-222300120155 Subject-Power Electronics Sub code - PC EE 504 TOPIC - POWER MOSFET
  • 2. Symbol and Structure ▪︎ The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistor is a semiconductor device which is widely used for switching and amplifying electronic signals in the electronic devices MOSFET is a four terminal device •Source(S) •Gate (G) • Drain (D) •Body (B)
  • 3. Types • MOSFETs are available in two basic forms • P-Channel • N-Channel • Depletion Type: The transistor requires the Gate-Source voltage (VGs) to switch the device "OFF". The depletion mode MOSFET is equivalent to a "Normally Closed" switch. • Enhancement Type: The transistor requires a Gate-Source voltage(VGs) to switch the device "ON". The enhancement mode MOSFET is equivalent to a "Normally Open" switch.
  • 6. MOSFET Characteristics • MOSFETs are tri-terminal, unipolar, voltage-controlled device which form an integral part of vast variety of electronic circuits. • These devices can be classified into two types Depletion-type Enhancement-type MOSFET exhibits three operating regions Cut-Off Region • Cut-off region is a region in which the MOSFET will be OFF as there will be no current flow through it. In this region, MOSFET behaves like an open switch and is thus used when they are required to function as electronic switches Ohmic or Linear Region • Ohmic or linear region is a region where in the current los increases with an increase in the value of Vos
  • 7. Saturation Region • In saturation region device will act like a closed switch through which a saturated value of los flows. • As a result, this operating region is chosen whenever MOSFETs are required to perform switching operations.
  • 8. ▪︎ Transfer characteristics (drain-to-source current Ips versus gate-to-source voltage Ves) of n-channel Enhancement-type MOSFET . ▪︎ Current through the device will be zero until the Vos exceeds the value threshold voltage VT. ▪︎ U n d e r t h i s c o n d i t i on, even an increase in Vos will result in no current flow ▪︎ Once Vos crosses V, the current through the device increases with an increase in Ips initially (Ohmic region) and then saturates to a value as determined by the VGs (saturation region of operation).