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Overview of early publications on Atomic Layer Deposition
Jaan Aarik1, Andrew R. Akbashev2, Mikhael Bechelany3, Jill S. Becker4, Maria
Berdova5, David Cameron6, Catherine Dubourdieu7, Jeffrey Elam8, Simon
Elliott9, Gloria Gottardi10, Kestutis Grigoras11, Yury Koshtyal12, Marja-Leena
Kääriäinen13, Tommi Kääriäinen13, Luca Lamagna14, Anatoly Malkov15, Anatoly
Malygin15, Jyrki Molarius11, Juha Nikkola11, Henrik Pedersen16, Riikka L.
Puurunen11, Alexander Pyymäki Perros5, Robin H. A. Ras5, Fred Roozeboom17,
Timo Sajavaara18, Hele Savin5, Thomas E. Seidel19, Pia Sundberg5, Jonas
Sundqvist20, J. Ruud van Ommen21, Oili M. E. Ylivaara11
1
University of Tartu, Institute of Physics, Tartu, Estonia;
2
Drexel University, Philadelphia,
Pennsylvania, USA;
3
CNRS University of Montpellier, Montpellier, France;
4
02139 Inc.,
Cambridge, Massachusetts, USA;
5
Aalto University, Espoo, Finland;
6
Miktech Oy, Mikkeli,
Finland;
7
Institut des Nanotechnologies de Lyon & Joint Laboratory InCVD, Lyon, France;
8
Argonne National Laboratory, Illinois, USA;
9
Tyndall National Institute, University College Cork,
Lee Maltings, Cork, Ireland;
10
Fondazione Bruno Kessler, Center for Materials and
Microsystems, Trento, Italy;
11
VTT Technical Research Centre of Finland, Espoo, Finland,
12
Ioffe Physical Technical Institute, St. Petersburg, Russia;
13
University of Colorado Boulder,
Colorado, USA;
14
STMicroelectronics, Agrate Brianza, Italy;
15
St. Petersburg State
Technological Institute (Technical University),St. Petersburg, Russia;
16
Linköping University,
Linköping, Sweden;
17
Eindhoven University of Technology, and TNO, Eindhoven, The
Netherlands;
18
University of Jyväskylä, Jyväskylä, Finland;
19
Seitek50, POB350238, Palm
Coast, FL 32135, Florida, USA;
20
Fraunhofer IPMS-CNT, Dresden, Germany;
21
Delft University
of Technology, Delft, The Netherlands
riikka.puurunen@vtt.fi
Atomic layer deposition (ALD) is a technique that has been instrumental in enabling the semi-
conductor industry to maintain its adherence to Moore’s Law with smaller and smaller
dimensions, and is becoming a game-changer in several other fields. As for any significant
technology, it is interesting and important to know where the technique came from. How was the
concept developed? Which were the first ALD experiments? When, where and by whom were
they made? To explore these questions, a worldwide open collaborative initiative called the
“Virtual Project on the History of ALD (VPHA)” was launched in summer 2013. This poster
represents the first outcome of the project, lists the early ALD publications up to 1986, and
provides individual comments on the significance and contents of the publications. ALD was
invented independently (at least) twice, under the names “molecular layering” and “atomic layer
epitaxy”. From literature that has long been publicly available in the English language and which
can be found through scientific online databases, it is seen, for example, that a report of growth
of TiO2 thin films on planar substrates from TiCl4 and H2O reactants by ALD was published in
1970. This overview should raise awareness of the early ALD work that was carried out in
countries such as Bulgaria, Estonia, Finland, France, Germany, Japan, the Soviet Union, and the
United States. This will help today’s growing global ALD community to put their research into
context.
Acknowledgements: We are grateful for Dr. Tuomo Suntola’s general support during the
VPHA and for Dr. Aziz Abdulagatov’s and Annina Titoff’s assistance in initiating it. The VPHA
would not have been possible without the recent advances in professional social networking and
cloud computing. RLP acknowledges funding from the Finnish Centre of Excellence on Atomic
Layer Deposition. The author list is intentionally in alphabetical order.

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VPHA poster abstract Baltic ALD

  • 1. Overview of early publications on Atomic Layer Deposition Jaan Aarik1, Andrew R. Akbashev2, Mikhael Bechelany3, Jill S. Becker4, Maria Berdova5, David Cameron6, Catherine Dubourdieu7, Jeffrey Elam8, Simon Elliott9, Gloria Gottardi10, Kestutis Grigoras11, Yury Koshtyal12, Marja-Leena Kääriäinen13, Tommi Kääriäinen13, Luca Lamagna14, Anatoly Malkov15, Anatoly Malygin15, Jyrki Molarius11, Juha Nikkola11, Henrik Pedersen16, Riikka L. Puurunen11, Alexander Pyymäki Perros5, Robin H. A. Ras5, Fred Roozeboom17, Timo Sajavaara18, Hele Savin5, Thomas E. Seidel19, Pia Sundberg5, Jonas Sundqvist20, J. Ruud van Ommen21, Oili M. E. Ylivaara11 1 University of Tartu, Institute of Physics, Tartu, Estonia; 2 Drexel University, Philadelphia, Pennsylvania, USA; 3 CNRS University of Montpellier, Montpellier, France; 4 02139 Inc., Cambridge, Massachusetts, USA; 5 Aalto University, Espoo, Finland; 6 Miktech Oy, Mikkeli, Finland; 7 Institut des Nanotechnologies de Lyon & Joint Laboratory InCVD, Lyon, France; 8 Argonne National Laboratory, Illinois, USA; 9 Tyndall National Institute, University College Cork, Lee Maltings, Cork, Ireland; 10 Fondazione Bruno Kessler, Center for Materials and Microsystems, Trento, Italy; 11 VTT Technical Research Centre of Finland, Espoo, Finland, 12 Ioffe Physical Technical Institute, St. Petersburg, Russia; 13 University of Colorado Boulder, Colorado, USA; 14 STMicroelectronics, Agrate Brianza, Italy; 15 St. Petersburg State Technological Institute (Technical University),St. Petersburg, Russia; 16 Linköping University, Linköping, Sweden; 17 Eindhoven University of Technology, and TNO, Eindhoven, The Netherlands; 18 University of Jyväskylä, Jyväskylä, Finland; 19 Seitek50, POB350238, Palm Coast, FL 32135, Florida, USA; 20 Fraunhofer IPMS-CNT, Dresden, Germany; 21 Delft University of Technology, Delft, The Netherlands riikka.puurunen@vtt.fi Atomic layer deposition (ALD) is a technique that has been instrumental in enabling the semi- conductor industry to maintain its adherence to Moore’s Law with smaller and smaller dimensions, and is becoming a game-changer in several other fields. As for any significant technology, it is interesting and important to know where the technique came from. How was the concept developed? Which were the first ALD experiments? When, where and by whom were they made? To explore these questions, a worldwide open collaborative initiative called the “Virtual Project on the History of ALD (VPHA)” was launched in summer 2013. This poster represents the first outcome of the project, lists the early ALD publications up to 1986, and provides individual comments on the significance and contents of the publications. ALD was invented independently (at least) twice, under the names “molecular layering” and “atomic layer epitaxy”. From literature that has long been publicly available in the English language and which can be found through scientific online databases, it is seen, for example, that a report of growth of TiO2 thin films on planar substrates from TiCl4 and H2O reactants by ALD was published in 1970. This overview should raise awareness of the early ALD work that was carried out in countries such as Bulgaria, Estonia, Finland, France, Germany, Japan, the Soviet Union, and the United States. This will help today’s growing global ALD community to put their research into context. Acknowledgements: We are grateful for Dr. Tuomo Suntola’s general support during the VPHA and for Dr. Aziz Abdulagatov’s and Annina Titoff’s assistance in initiating it. The VPHA would not have been possible without the recent advances in professional social networking and cloud computing. RLP acknowledges funding from the Finnish Centre of Excellence on Atomic Layer Deposition. The author list is intentionally in alphabetical order.