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2. 2
View of an Integrated Circuit
• Scanning electron microscope images of an IC:
• A dot map showing location of Si (a semiconductor):
-- Si shows up as light regions.
• A dot map showing location of Al (a conductor):
-- Al shows up as light regions.
(b)
(c)
0.5mm
(a)
(d)
45mm
Al
Si
(doped)
(d)
3. 3
Electrical Conduction
• Resistivity, r and Conductivity, s:
-- geometry-independent forms of Ohm's Law
E: electric
field
intensity
resistivity
(Ohm-m)
J: current density
conductivity
-- Resistivity is a material property & is independent of sample
r
A
I
L
V
s
1
r
• Resistance:
s
r
A
L
A
L
R
• Ohm's Law:
V = I R
voltage drop (volts = J/C)
C = Coulomb
resistance (Ohms)
current (amps = C/s)
I
e-
A
(cross
sect.
area) V
L
4. Electrical Properties
Which will conduct more electricity?
Analogous to flow of water in a pipe
So resistance depends on sample
geometry, etc.
I
VA
RA
r
4
D
2D
5. Definitions
5
Further definitions
J = s <= another way to state Ohm’s law
J current density
electric field potential = V/ or (V/ )
flux
a
like
area
surface
current
A
I
Current carriers
• electrons in most solids
• ions can also carry (particularly in liquid solutions)
Electron flux conductivity voltage gradient
J = s (V/ )
7. 7
Conductivity: Comparison
• Room T values (Ohm-m) -1
Silver 6.8 x 10 7
Copper 6.0 x 10 7
Iron 1.0 x 10 7
METALS conductors
Silicon 4 x 10 -4
Germanium 2 x 10 0
GaAs 10 -6
SEMICONDUCTORS
semiconductors
= ( - m) -1
Polystyrene <10 -14
Polyethylene 10 -15-10 -17
Soda-lime glass 10
Concrete 10 -9
Aluminum oxide <10 -13
CERAMICS
POLYMERS
insulators
-10-10 -11
8. 8
Example: Conductivity Problem
What is the minimum diameter (D) of the wire so that V < 1.5 V?
100m
Cu wire I = 2.5A
- +
e-
V
Solve to get D > 1.87 mm
< 1.5V
2.5A
6.07 x 10 (Ohm-m)
7 -1
100m
I
V
A
L
R
s
4
2
D
10. Band Structure
10
Valence band – filled – highest occupied energy levels
Conduction band – empty – lowest unoccupied energy levels
valence band
Conduction
band
11. Conduction & Electron Transport
11
• Metals (Conductors):
-- Thermal energy puts
many electrons into
a higher energy state.
• Energy States:
-- for metals nearby
energy states
are accessible
by thermal
fluctuations.
+
-
-
filled
band
Energy
partly
filled
valence
band
empty
band
GAP
filled
states
Energy
filled
band
filled
valence
band
empty
band
filled
states
12. 12
Energy States: Insulators &
Semiconductors
• Insulators:
-- Higher energy states not
accessible due to gap (> 2 eV).
Energy
filled
band
filled
valence
band
empty
band
filled
states
GAP
• Semiconductors:
-- Higher energy states separated
by smaller gap (< 2 eV).
Energy
filled
band
filled
valence
band
empty
band
filled
states
GAP
?
13. Charge Carriers-Metals
13
Two charge carrying mechanisms
Electron – negative charge
Hole – equal & opposite
positive charge
Move at different speeds - drift
velocity
Higher temp. promotes more electrons into the conduction band
s as T
Electrons scattered by impurities, grain boundaries, etc.
14. Charge Carriers-Semiconductor and
Insulator
14
For an insulator or semiconductor, occupancy of electron states
(a) before
(b) after an electron excitation from the valence band into the
conduction band, in which both a free electron and a hole are
generated.
15. Electron Mobility
15
Path of an electron that is deflected by
scattering events.
A force is brought to bear on the free electrons; When an electric field is applied
and they all experience an acceleration in a direction opposite to that of the field,
by virtue of their negative charge. The scattering phenomenon is manifested as a
resistance to the passage of an electric current.
Drift Velocity
The average electron velocity in the
direction of the force imposed by the
applied field. It is directly proportional to
the electric field
µe – Electron Mobility
Conductivity
16. Band Gap Energies, Electron and Hole Mobilities, and
Intrinsic Electrical Conductivities at Room Temperature
for Semiconducting Materials
17. Electrical Resistivity Of Metals
17
Metals have high conductivities because of the large numbers of
free electrons that have been excited into empty states above
the Fermi energy. Thus, n has a large value in the conductivity
expression
Room-Temperature Electrical Conductivities for Nine Common Metals and Alloys
18. Electrical Resistivity Of Metals
18
The electrical resistivity versus
temperature for copper and
three copper–nickel alloys,
one of which has been
deformed. Thermal, impurity,
and deformation contributions
to the resistivity are indicated
at -100ºC
19. Electrical Resistivity Of Metals
Room-temperature electrical
resistivity versus composition for
copper–zinc
alloys.
20. Electrical Resistivity Of Metals
20
Total resistivity of a metal is the sum of the
contributions from thermal vibrations, impurities
and plastic deformation
Influence of Temperature
Influence of Impurities ci - Impurity
Concentration
A - Composition-independent
Constant
21. Metals: Resistivity vs T, Impurities
21
• Imperfections increase resistivity
-- grain boundaries
-- dislocations
-- impurity atoms
-- vacancies
These act to scatter
electrons so that they
take a less direct path.
• Resistivity
increases with:
-- temperature
-- wt% impurity
-- %CW
r = rthermal
+ rimpurity
+ rdeformation
T (°C)
-200 -100 0
1
2
3
4
5
6
Resistivity,
r
(10
-8
Ohm-m)
0
22. Estimating Conductivity
22
• Question:
-- Estimate the electrical conductivity s of a Cu-Ni alloy
that has a yield strength of 125 MPa.
m
m
Oh
10
x
30 8
r
1
6
)
m
m
Oh
(
10
x
3
.
3
1
r
s
Yield
strength
(MPa)
wt. %Ni, (Concentration C)
0 10 20 30 40 50
60
80
100
120
140
160
180
21 wt%Ni
wt. %Ni, (Concentration C)
Resistivity,
r
(10
-8
Ohm-m)
10 20 30 40 50
0
10
20
30
40
50
0
125
CNi = 21 wt%Ni
From step 1:
30
23. Pure Semiconductors: Conductivity vs T
23
• Data for Pure Silicon:
-- s increases with T
-- opposite to metals
electrical conductivity, s
(Ohm-m)-1
50 100 1000
10-2
10-1
100
101
102
103
104
pure
(undoped)
T(K)
electrons
can cross
gap at
higher T
material
Si
Ge
GaP
CdS
band gap (eV)
1.11
0.67
2.25
2.40
kT
/
Egap
s e
undoped
Energy
filled
band
filled
valence
band
empty
band
filled
states
GAP
?
24. Dielectric Behavior
24
A dielectric material is one that is electrically insulating (nonmetallic) and
exhibits or may be made to exhibit an electric dipole structure; that is, there
is a separation of positive and negative electrically charged entities on a
molecular or atomic level. Dipole interaction with electric field, dielectric
materials are utilized in capacitor
ϵ - permittivity
ϵr Dielectric Constant
27. Polarization
27
p - electric dipole moment
q - the magnitude of each dipole charge
d - the distance
An electric dipole generated by
two electric charges (of magnitude q)
separated by the distance d and the
associated polarization vector p
29. Polarization
29
(a) The charge stored on capacitor
plates for a vacuum
(b) The dipole arrangement in an
unpolarized dielectric
(c) the increased charge storing
capacity resulting from the
polarization of a dielectric
material.
31. Primary and Derived Units for Various Electrical
Parameters
and Field Vectors
31
32. Types Of Polarization
Electronic Polarization
Electronic polarization may be induced to one degree or another in
all atoms. It results from a displacement of the center of the
negatively charged electron cloud relative to the positive nucleus of
an atom by the electric field. This polarization type is found in all
dielectric materials and, of course, exists only while an electric field
is present.
Electronic polarization that results from the distortion of an atomic
electron cloud by an electric field
33. Types Of Polarization
Ionic Polarization
Ionic polarization occurs only in materials that are ionic. An applied
field acts to displace cations in one direction and anions in the
opposite direction, which gives rise to a net dipole moment. The
magnitude of the dipole moment for each ion pair pi is equal to the
product of the relative displacement di and the charge on each ion,
or
Ionic polarization that results
from the relative
displacements of electrically
charged ions in response
to an electric field
34. Types Of Polarization
Orientation Polarization
The third type, orientation polarization, is found only in substances that
possess permanent dipole moments. Polarization results from a rotation of the
permanent moments into the direction of the applied field. This alignment
tendency is counteracted by the thermal vibrations of the atoms, such that
polarization decreases with increasing temperature.
Response of permanent
electric dipoles (arrows) to
an applied electric field,
producing orientation
polarization.
35. FREQUENCY DEPENDENCE OF
THE DIELECTRIC CONSTANT
In many practical situations the current is
alternating (ac); that is, an applied voltage or
electric field changes direction with time
Dipole orientations for (a) one polarity of an alternating electric field and
(b) for the reversed polarity.
36. FREQUENCY DEPENDENCE OF
THE DIELECTRIC CONSTANT
With each direction reversal, the dipoles attempt to
reorient with the field, in a process requiring some
finite time. For each polarization type, some minimum
reorientation time exists, which depends on the ease
with which the particular dipoles are capable of
realignment. A relaxation frequency is taken as the
reciprocal of this minimum reorientation time.
The absorption of electrical energy by a dielectric
material that is subjected to an alternating electric
field is termed dielectric loss. This loss may be
important at electric field frequencies in the vicinity of
the relaxation frequency for each of the operative
dipole types for a specific material. A low dielectric
loss is desired at the frequency of utilization.
37. FREQUENCY DEPENDENCE OF
THE DIELECTRIC CONSTANT
Variation of dielectric constant with frequency of an alternating electric field.
Electronic, ionic and orientation polarization contributions to the dielectric constant are
indicated
38. DIELECTRIC STRENGTH
When very high electric fields are applied across dielectric
materials, large numbers of electrons may suddenly be
excited to energies within the conduction band. As a result,
the current through the dielectric by the motion of these
electrons increases dramatically; sometimes localized
melting, burning, or vaporization produces irreversible
degradation and perhaps even failure of the material. This
phenomenon is known as dielectric breakdown. The
dielectric strength, sometimes called the breakdown
strength, represents the magnitude of an electric field
necessary to produce breakdown.
39. DIELECTRIC MATERIALS
A number of ceramics and polymers are utilized as
insulators and/or in capacitors. Many of the ceramics,
including glass, porcelain, steatite and mica, have
dielectric constants within the range of 6 to 10. These
materials also exhibit a high degree of dimensional stability
and mechanical strength. Typical applications include
powerline and electrical insulation, switch bases, and light
receptacles. The titania (TiO2) and titanate ceramics, such
as barium titanate (BaTiO3), can be made to have
extremely high dielectric constants, which render them
especially useful for some capacitor applications.
The magnitude of the dielectric constant for most polymers
is less than for ceramics, since the latter may exhibit
greater dipole moments: values for polymers generally lie
between 2 and 5. These materials are commonly utilized
for insulation of wires, cables, motors, generators, and so
on, and, in addition, for some capacitors.