The document discusses glass manufacturing and processing technologies. It covers topics like cover glass flow, different types of cover glass, glass technology summaries, glass ingredient components, glass process introduces float glass and down draw techniques. It also discusses physical properties of glass, defects analysis, cutting, grinding, beveling, CNC cutting, and polish and thinning processes. The key aspects of glass production processes are emphasized.
5. AUO Proprietary & Confidential
Glass technology summary
Application
Mother
glass
Glass process Lamination
Soda lime
Gen size
cutting
Beve
ling
CNC
cutting
Polish
Temper
ed
Barrier
coating
AR/AG
/AF/AS
Print Lamination
3D PR V V V X X X X X X V
3D switch V V V X V X V X X V
Touch V V V X X V V? V X V
Cover glass V V V V X V X V V V
TFT-LCD V V V X V X V X X X
Mother glass
process
Gen size cutting
Beveling
CNC cutting Polish及Thin Chemical strengthen Barrier coating
AR/AG/AF/AS Print Lamination
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PCT Stack Structure v.s Size
CF (0.5 mm)
Sensor
TFT (0.5 mm)
LC
In-cell
Touch
panel
FPC
PF
Protect Film 4H
In-cell + Protect film
15.6” 24”10.1”
LCD
Sensor glass ( ~0.7mm )
Sensor
OCA
FPC
On-cell
Touch
panel
PF
CF (0.5 mm)
Sensor
TFT (0.5 mm)
LC
OCA
Cover lens ( 1 mm )
In-cell
Touch
panel
FPC
PF
In-cell + Cover
w/i Direct Bound
Sensor
OCA
Cover lens ( 1 mm )
LCD
PF
On-Cover
Touch
Panel
Sensor glass ( ~0.5mm )
Sensor
OCA
Cover lens ( 1mm )
On-cell
Touch
Panel
LCD
PF
Air gap (0.5mm)
LCD
Sensor glass ( ~0.7mm )
Sensor
OCA
On-cell
Touch
panel
PF
Protect Film 4H
On-Cell + Cover
On-Cell
9. AUO Proprietary & Confidential
Glass Ingredients
SiO2 Na2O CaO MgO Al2O3 Fe2O3 K2O TiO2
70-73% 13-15% 7-12% 1-4.5% 1-2% 0.1% 0.03% 0.02%
PDP Glass (CGC)
TFT LCD Glass (Asahi)
SiO2 Na2O CaO MgO Al2O3 Fe2O3 K2O TiO2 BaO ZrO2
53-56% 3-5% 6-9% 2-4% 8-11% X 7-9% X 8-10% 0-4%
SiO2 Na2O CaO MgO Al2O3 Fe2O3 K2O TiO2 B2O3 SrO
60% < 0.1% 4% 3% 17% X X X 8% 8%
Soda-Lime Glass
Main SiO2 amorphous solid state
Based on the local tetrahedral periodic structure
Minor substance
Interact with SiO2 to strengthen main structure
Improve property and stability. Independent to SiO2,
and easy to effuse alkali ions
40. AUO Proprietary & Confidential
Chemical Thinning Process
Method : immersion / spray (high throughput)
Etchant: HF / fluoride-base chemical (GLET-30) NH4HF2+α+β
Good thickness variation and surface roughness control.
Dimple issue (no mura after PF )
41. AUO Proprietary & Confidential
Ra = 0.6nm
No thinner
Ra = 1.961nm
Glass Thinning Process
Ra: 1.11nm
After HF etching
w/o 2nd polish
After Machine Thinning
w/o 2nd polish
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Mechanical Chemical
Yield Rate 95% 99%
Strength Strongest (Polishing) Stronger
Surface Roughness Roughless (Polishing) Average
Thickness Uniformity NO YES
Solution Infiltration by Slurry by HF
Patterns damage NO May be
Scratch Less May be
Chipping Easy less
Micro-crack Easy less
Residual glue on OLB Chip --> YES Chip --> YES
Polishing Request Definitely Suggest
Environment Safe Danger
Equipment Size Largest Small
Equipment Cost High Low
Process amount Depend by tool size Depend by tank size
Material Consumption Slurry / 鑽石鋌 / 研磨砂 HF
Wastage & Cost Low High
43. AUO Proprietary & Confidential
Introduction to Cover lens and C/S Glass
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Outline
• Introduction glass chemical strengthening and Important Parameters
• Testing in AUO Lab. (SIMS, Glass 荷重, 4-Point Bending, Pencil
Hardness Test)
• Glass Vender
• Cover lens and C/S glass wish spec
45. AUO Proprietary & Confidential
Introduction to C/S glass and Important Parameters
From AGC
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Spin coating process
Fluid dispense Spin up Fluid dispense evaporation
66. AUO Proprietary & Confidential
PVD technology
Ground shield
Floating Mask
Cooling water
Target
Mask
磁鐵
水冷板
基板
Susceptor
Heater
Backing Plate
Cooling Water
DC Power Supply
1.在低壓中導入工作氣體(Ar)及電子,經電場的加速作用下使之具有足夠能量並碰撞中性原子而產生正離子
2.正離子經陰極暗區電場作用加速後撞擊靶材使原子逸出,同時產生二次電子
3.逸出靶材表面之原子飛濺至基板表面
4.產生之二次電子再經電場加速具有能量後與工作氣體中性原子再碰撞產生正離子,正離子撞擊靶材表面並在
釋放出二次電子
Process chamber top view
利用磁場使電子在target表面作螺旋運動,增加與Ar碰撞的機會,使target的電流密度增加;
磁鐵控制薄膜之均勻度
67. AUO Proprietary & Confidential
CVD technology
To Dry
Pump
Showerhead
13.56 MHz RF
(Deposition Only)
Glass Substrate
Slit
Valve
Gas In
Remote
Plasma Source
(Clean Only)
Deposition:
SiN, Si, SiO2, …etc
Plasma Cleaning:
NF3 → N2 + .F
.F + Si → SiF4
Diffuser控制薄膜之均勻度
Diffuser與Substrate的間距愈小Plasma越往外擴,間距愈大產生的Film越鬆散
Spacing會影響膜質(織密程度)、Dep. Rate以及Uniformity
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Sol-gel tech. vs PVD / CVD tech. comparison
Sol – gel technology PVD / CVD
Equipment investment fee Low High
Coating method Spin , dipping , spray , slit Thin film coating
Solvent Organic solvent vacuum
Baking tunnel or furnace 200 C ~ 400 C for 30~60min Not necessary
hardness Strong Worse than sol gel method
Residue on glass Sol-gel aggregation Thin film particle
material TEOS , TEOTi hydrolysis Target / gas
Material storage Sol – gel -20 C is better Target room temp
Chemical resistance Good Worse than sol gel method
G6 G7 G8 or more Difficult Easy
U% - Multi-layer > 3 layers Not good Good
Na+ , K+ blocking Depend on baking temp Good
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Introduction to outer surface coating
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Outline
• AR coating – anti - reflection coating
• AG coating - anti - glare coating
• AS coating – anti – smudge coating ( 防污 抗指紋 )
• AS coating - anti – static coating
71. AUO Proprietary & Confidential
AR Glass=Anti-Reflective Glass
高穿透抗反射光學鍍膜玻璃