1. DATA SHEET
Product specification
Supersedes data of 1997 Aug 27
File under Discrete Semiconductors, SC01
1997 Oct 21
DISCRETE SEMICONDUCTORS
BAV70S
High-speed double diode array
MBD128
2. 1997 Oct 21 2
Philips Semiconductors Product specification
High-speed double diode array BAV70S
FEATURES
• Small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 450 mA.
APPLICATIONS
• General purpose switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAV70S consists of two dual
high-speed switching diodes with
common cathodes, fabricated in
planar technology, and encapsulated
in the small SMD SOT363 plastic
package.
PINNING
PIN DESCRIPTION
1 anode (a1)
2 anode (a2)
3 common cathode (k1)
4 anode (a3)
5 anode (a4)
6 common cathode (k2)
Fig.1 Simplified outline (SOT363) and symbol.
Marking code: A4t.
handbook, halfpage 6 5 4
1 2 3 MGL160
MSA370
1 2 3
6 5 4
Top view
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. One or more diodes loaded.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VRRM repetitive peak reverse voltage − 85 V
VR continuous reverse voltage − 75 V
IF continuous forward current single diode loaded; see Fig.2 − 250 mA
all diodes loaded; see Fig.2 − 100 mA
IFRM repetitive peak forward current − 450 mA
IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs − 4 A
t = 1 ms − 1 A
t = 1 s − 0.5 A
Ptot total power dissipation Ts = 60 °C; note 1 − 350 mW
Tstg storage temperature −65 +150 °C
Tj junction temperature −65 +150 °C
3. 1997 Oct 21 3
Philips Semiconductors Product specification
High-speed double diode array BAV70S
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. One or more diodes loaded.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
VF forward voltage see Fig.3
IF = 1 mA 715 mV
IF = 10 mA 855 mV
IF = 50 mA 1 V
IF = 150 mA 1.25 V
IR reverse current see Fig.5
VR = 25 V 30 nA
VR = 75 V 2.5 µA
VR = 25 V; Tj = 150 °C 60 µA
VR = 75 V; Tj = 150 °C 100 µA
Cd diode capacitance VR = 0; f = 1 MHz; see Fig.6 1.5 pF
trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA;
RL = 100 Ω; measured at IR = 1 mA; see Fig.7
4 ns
Vfr forward recovery voltage when switched from IF = 10 mA; tr = 20 ns; see Fig.8 1.75 V
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to soldering point note 1 255 K/W
4. 1997 Oct 21 4
Philips Semiconductors Product specification
High-speed double diode array BAV70S
GRAPHICAL DATA
Fig.2 Maximum permissible continuous forward
current as a function of soldering point
temperature.
0 200
300
0
100
200
MBK148
100 Ts (°C)
I F
(mA)
single diode loaded
all diodes loaded
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig.3 Forward current as a function of
forward voltage.
handbook, halfpage
0 2
300
IF
(mA)
0
100
200
MBG382
1 VF (V)
(1) (3)
(2)
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
Tj = 25 °C prior to surge.
handbook, full pagewidth
MBG704
10 tp (µs)
1
IFSM
(A)
102
10−1
104
102
103
10
1
5. 1997 Oct 21 5
Philips Semiconductors Product specification
High-speed double diode array BAV70S
Fig.5 Reverse current as a function of
junction temperature.
102
10
200
0
MGA885
100
T ( C)
j
o
IR
( A)
µ
1
75 V
25 V
typ
max
typ
10 2
10
1
V = 75 V
R
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj = 25 °C.
handbook, halfpage
0 8 16
12
4
0.8
0.6
0
0.4
0.2
MBG446
VR (V)
Cd
(pF)
6. 1997 Oct 21 6
Philips Semiconductors Product specification
High-speed double diode array BAV70S
Fig.7 Reverse recovery voltage test circuit and waveforms.
handbook, full pagewidth
t rr
(1)
IF
t
output signal
tr
t
t p
10%
90%
VR
input signal
V = V I x R
R F S
R = 50
S Ω IF
D.U.T.
R = 50
i Ω
SAMPLING
OSCILLOSCOPE
MGA881
(1) IR = 1 mA.
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05.
Oscilloscope: rise time tr = 0.35 ns.
Fig.8 Forward recovery voltage test circuit and waveforms.
tr
t
t p
10%
90%
I
input
signal
R = 50
S Ω
I
R = 50
i Ω
OSCILLOSCOPE
Ω
1 k Ω
450
D.U.T.
MGA882
Vfr
t
output
signal
V
Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty factor δ ≤ 0.005.
7. 1997 Oct 21 7
Philips Semiconductors Product specification
High-speed double diode array BAV70S
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC EIAJ
SOT363 SC-88
w B
M
bp
D
e1
e
pin 1
index A
A1
Lp
Q
detail X
HE
E
v M A
A
B
y
0 1 2 mm
scale
c
X
1 3
2
4
5
6
Plastic surface mounted package; 6 leads SOT363
UNIT
A1
max
bp c D E e1 HE Lp Q y
w
v
mm 0.1
0.30
0.20
2.2
1.8
0.25
0.10
1.35
1.15
0.65
e
1.3
2.2
2.0
0.2 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
0.25
0.15
A
1.1
0.8
97-02-28
8. 1997 Oct 21 8
Philips Semiconductors Product specification
High-speed double diode array BAV70S
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
