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ENGINEERING METALLURGY
Prepared by Dr. Tanuja Vaidya
INTRODUCTION TO ENGINEERING
MATERIALS
Common type of materials
Metals Ceramics Polymers
Composites
Structure
Properties
Processing
Performance
The Materials Tetrahedron
Prepared by Dr. Tanuja Vaidya
METALLURGY
PHYSICAL MECHANICAL ELECTRO-
CHEMICAL
TECHNOLOGICAL
• Extractive
• Casting
• Metal Forming
• Welding
• Powder Metallurgy
• Machining
• Structure
• Physical
Properties
Science of Metallurgy
• Deformation
Behaviour
•Chemistry
• Corrosion
Prepared by Dr. Tanuja Vaidya
Atom Structure
Crystal
Electro-
magnetic
Microstructure Component
Thermo-mechanical
Treatments
Phases Defects
+
• Vacancies
• Dislocations
• Twins
• Stacking Faults
• Grain Boundaries
• Voids
• Cracks
+
Residual
Stress
Processing determines shape and microstructure of a component
Prepared by Dr. Tanuja Vaidya
Crystal Structure
• An ideal crystal is a periodic array of
structural units, such as atoms or molecules.
• It can be constructed by the infinite repetition
of these identical structural units in space.
• Structure can be described in terms of a
lattice, with a group of atoms attached to
each lattice point. The group of atoms is the
basis.
Prepared by Dr. Tanuja Vaidya
• Unit cell: smallest repetitive volume which
contains the complete lattice pattern of a
crystal.
• 7 crystal systems of varying
symmetry are known,
These systems are built by
changing the lattice parameters:
a, b, and c are the edge lengths,
, , and  are inter axial
angles
Fig. 3.4, Callister 7e.
Prepared by Dr. Tanuja Vaidya
Basic types of crystal structures
SC BCC FCC
Prepared by Dr. Tanuja Vaidya
• APF for a simple cubic structure = 0.52
APF =
a3
4
3
p (0.5a) 3
1
atoms
unit cell
atom
volume
unit cell
volume
Atomic Packing Factor (APF)
APF =
Volume of atoms in unit cell*
Volume of unit cell
*assume hard spheres
Adapted from Fig. 3.23,
Callister 7e.
close-packed directions
a
R=0.5a
contains (8 x 1/8) =
1 atom/unit cell Here: a = Rat*2
Where Rat is the ‘handbook’ atomic
radius
Prepared by Dr. Tanuja Vaidya
• Coordination # = 8
Adapted from Fig. 3.2,
Callister 7e.
(Courtesy P.M. Anderson)
• Atoms touch each other along cube diagonals.
--Note: All atoms are identical; the center atom is shaded
differently only for ease of viewing.
Body Centered Cubic Structure (BCC)
ex: Cr, W, Fe (), Tantalum, Molybdenum
2 atoms/unit cell: (1 center) + (8 corners x 1/8)
Prepared by Dr. Tanuja Vaidya
Atomic Packing Factor: BCC
a
APF =
4
3
p ( 3a/4)3
2
atoms
unit cell atom
volume
a3
unit cell
volume
length = 4R =
Close-packed directions:
3 a
• APF for a body-centered cubic structure = 0.68
a
R
Adapted from
Fig. 3.2(a), Callister 7e.
a
2
a
3
Prepared by Dr. Tanuja Vaidya
• Coordination # = 12
• ABAB... Stacking Sequence
• APF = 0.74
• 3D Projection • 2D Projection
Adapted from Fig. 3.3(a),
Callister 7e.
Hexagonal Close-Packed Structure (HCP)
6 atoms/unit cell
ex: Cd, Mg, Ti, Zn
• c/a = 1.633 (ideal)
c
a
A sites
B sites
A sites
Bottom layer
Middle layer
Top layer
Prepared by Dr. Tanuja Vaidya
CRYSTALLOGRAPHIC DEFECT
Crystalline solids exhibit a periodic crystal structure. The positions of
atoms or molecules occur on repeating fixed distances, determined by the
unit cell parameters. However, the arrangement of atoms or molecules in
most crystalline materials is not perfect. The regular patterns are
interrupted by crystallographic defects
Electron microscopy of antisites (a, Mo
substitutes for S) and vacancies (b, missing
S atoms) in a monolayer of molybdenum
disulfide. Scale bar: 1 nm.[1]
Prepared by Dr. Tanuja Vaidya
Point defects
• Point defects are defects that occur only at or
around a single lattice point. They are not
extended in space in any dimension.
• However, these defects typically involve at most a
few extra or missing atoms.
• Larger defects in an ordered structure are usually
considered dislocation loops.
• These dislocations permit ionic transport through
crystals leading to electrochemical reactions.
point defect types in a monatomic solid
Prepared by Dr. Tanuja Vaidya
Vacancy defects
•are lattice sites which would be occupied in a perfect crystal, but are vacant.
• If a neighboring atom moves to occupy the vacant site, the vacancy moves in the
opposite direction to the site which used to be occupied by the moving atom.
•The stability of the surrounding crystal structure guarantees that the neighboring
atoms will not simply collapse around the vacancy.
•In some materials, neighboring atoms actually move away from a vacancy,
because they experience attraction from atoms in the surroundings.
•Interstitial defects
•are atoms that occupy a site in the crystal structure at which there is usually not
an atom. They are generally high energy configurations.
•Small atoms in some crystals can occupy interstices without high energy, such
as hydrogen in palladium.
Prepared by Dr. Tanuja Vaidya
Line Defects
•Dislocations are linear defects, around which (the atoms of the crystal lattice
are misaligned. There are two basic types of dislocations, the edge dislocation
and the screw dislocation. "Mixed" dislocations, combining aspects of both
types, are also common.
•Edge dislocations are caused by the termination of a plane of atoms in the
middle of a crystal. In such a case, the adjacent planes are not straight, but
instead bend around the edge of the terminating plane so that the crystal
structure is perfectly ordered on either side.
•The screw dislocation is more difficult to visualise, but basically comprises a
structure in which a helical path is traced around the linear defect (dislocation
line) by the atomic planes of atoms in the crystal lattice.
•The presence of dislocation results in lattice strain (distortion). For an edge
type, b is perpendicular to the dislocation line, whereas in the cases of the
screw type it is parallel. In metallic materials, b is aligned with close-packed
crystallographic directions and its magnitude is equivalent to one inter-atomic
spacing.
The dislocation line is presented in blue
Prepared by Dr. Tanuja Vaidya
PLANAR DEFECTS
•Grain boundaries occur where the crystallographic
direction of the lattice abruptly changes. This usually
occurs when two crystals begin growing separately
and then meet.
•Antiphase boundaries occur in ordered alloys: in this
case, the crystallographic direction remains the same,
but each side of the boundary has an opposite
phase:
Origin of stacking faults: Different stacking
sequences of close-packed crystals
Prepared by Dr. Tanuja Vaidya

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14-EMET-Tanuja- Vaidya.pptx

  • 2. INTRODUCTION TO ENGINEERING MATERIALS Common type of materials Metals Ceramics Polymers Composites Structure Properties Processing Performance The Materials Tetrahedron Prepared by Dr. Tanuja Vaidya
  • 3. METALLURGY PHYSICAL MECHANICAL ELECTRO- CHEMICAL TECHNOLOGICAL • Extractive • Casting • Metal Forming • Welding • Powder Metallurgy • Machining • Structure • Physical Properties Science of Metallurgy • Deformation Behaviour •Chemistry • Corrosion Prepared by Dr. Tanuja Vaidya
  • 4. Atom Structure Crystal Electro- magnetic Microstructure Component Thermo-mechanical Treatments Phases Defects + • Vacancies • Dislocations • Twins • Stacking Faults • Grain Boundaries • Voids • Cracks + Residual Stress Processing determines shape and microstructure of a component Prepared by Dr. Tanuja Vaidya
  • 5. Crystal Structure • An ideal crystal is a periodic array of structural units, such as atoms or molecules. • It can be constructed by the infinite repetition of these identical structural units in space. • Structure can be described in terms of a lattice, with a group of atoms attached to each lattice point. The group of atoms is the basis. Prepared by Dr. Tanuja Vaidya
  • 6. • Unit cell: smallest repetitive volume which contains the complete lattice pattern of a crystal. • 7 crystal systems of varying symmetry are known, These systems are built by changing the lattice parameters: a, b, and c are the edge lengths, , , and  are inter axial angles Fig. 3.4, Callister 7e. Prepared by Dr. Tanuja Vaidya
  • 7. Basic types of crystal structures SC BCC FCC Prepared by Dr. Tanuja Vaidya
  • 8. • APF for a simple cubic structure = 0.52 APF = a3 4 3 p (0.5a) 3 1 atoms unit cell atom volume unit cell volume Atomic Packing Factor (APF) APF = Volume of atoms in unit cell* Volume of unit cell *assume hard spheres Adapted from Fig. 3.23, Callister 7e. close-packed directions a R=0.5a contains (8 x 1/8) = 1 atom/unit cell Here: a = Rat*2 Where Rat is the ‘handbook’ atomic radius Prepared by Dr. Tanuja Vaidya
  • 9. • Coordination # = 8 Adapted from Fig. 3.2, Callister 7e. (Courtesy P.M. Anderson) • Atoms touch each other along cube diagonals. --Note: All atoms are identical; the center atom is shaded differently only for ease of viewing. Body Centered Cubic Structure (BCC) ex: Cr, W, Fe (), Tantalum, Molybdenum 2 atoms/unit cell: (1 center) + (8 corners x 1/8) Prepared by Dr. Tanuja Vaidya
  • 10. Atomic Packing Factor: BCC a APF = 4 3 p ( 3a/4)3 2 atoms unit cell atom volume a3 unit cell volume length = 4R = Close-packed directions: 3 a • APF for a body-centered cubic structure = 0.68 a R Adapted from Fig. 3.2(a), Callister 7e. a 2 a 3 Prepared by Dr. Tanuja Vaidya
  • 11. • Coordination # = 12 • ABAB... Stacking Sequence • APF = 0.74 • 3D Projection • 2D Projection Adapted from Fig. 3.3(a), Callister 7e. Hexagonal Close-Packed Structure (HCP) 6 atoms/unit cell ex: Cd, Mg, Ti, Zn • c/a = 1.633 (ideal) c a A sites B sites A sites Bottom layer Middle layer Top layer Prepared by Dr. Tanuja Vaidya
  • 12. CRYSTALLOGRAPHIC DEFECT Crystalline solids exhibit a periodic crystal structure. The positions of atoms or molecules occur on repeating fixed distances, determined by the unit cell parameters. However, the arrangement of atoms or molecules in most crystalline materials is not perfect. The regular patterns are interrupted by crystallographic defects Electron microscopy of antisites (a, Mo substitutes for S) and vacancies (b, missing S atoms) in a monolayer of molybdenum disulfide. Scale bar: 1 nm.[1] Prepared by Dr. Tanuja Vaidya
  • 13. Point defects • Point defects are defects that occur only at or around a single lattice point. They are not extended in space in any dimension. • However, these defects typically involve at most a few extra or missing atoms. • Larger defects in an ordered structure are usually considered dislocation loops. • These dislocations permit ionic transport through crystals leading to electrochemical reactions. point defect types in a monatomic solid Prepared by Dr. Tanuja Vaidya
  • 14. Vacancy defects •are lattice sites which would be occupied in a perfect crystal, but are vacant. • If a neighboring atom moves to occupy the vacant site, the vacancy moves in the opposite direction to the site which used to be occupied by the moving atom. •The stability of the surrounding crystal structure guarantees that the neighboring atoms will not simply collapse around the vacancy. •In some materials, neighboring atoms actually move away from a vacancy, because they experience attraction from atoms in the surroundings. •Interstitial defects •are atoms that occupy a site in the crystal structure at which there is usually not an atom. They are generally high energy configurations. •Small atoms in some crystals can occupy interstices without high energy, such as hydrogen in palladium. Prepared by Dr. Tanuja Vaidya
  • 15. Line Defects •Dislocations are linear defects, around which (the atoms of the crystal lattice are misaligned. There are two basic types of dislocations, the edge dislocation and the screw dislocation. "Mixed" dislocations, combining aspects of both types, are also common. •Edge dislocations are caused by the termination of a plane of atoms in the middle of a crystal. In such a case, the adjacent planes are not straight, but instead bend around the edge of the terminating plane so that the crystal structure is perfectly ordered on either side. •The screw dislocation is more difficult to visualise, but basically comprises a structure in which a helical path is traced around the linear defect (dislocation line) by the atomic planes of atoms in the crystal lattice. •The presence of dislocation results in lattice strain (distortion). For an edge type, b is perpendicular to the dislocation line, whereas in the cases of the screw type it is parallel. In metallic materials, b is aligned with close-packed crystallographic directions and its magnitude is equivalent to one inter-atomic spacing. The dislocation line is presented in blue Prepared by Dr. Tanuja Vaidya
  • 16. PLANAR DEFECTS •Grain boundaries occur where the crystallographic direction of the lattice abruptly changes. This usually occurs when two crystals begin growing separately and then meet. •Antiphase boundaries occur in ordered alloys: in this case, the crystallographic direction remains the same, but each side of the boundary has an opposite phase: Origin of stacking faults: Different stacking sequences of close-packed crystals Prepared by Dr. Tanuja Vaidya