This document provides specifications and performance characteristics for the FQD13N10L/FQU13N10L N-Channel QFET MOSFET from Fairchild Semiconductor. The MOSFET has a maximum drain-source voltage of 100V, can provide continuous drain current up to 10A, and has an on-resistance as low as 180mOhm. Graphs of electrical characteristics like capacitance, gate charge, and safe operating area are included, showing performance over temperature and operating conditions. Testing methods are also described for key parameters. The device is suitable for applications like power supplies, motor control, and switching regulators.

1. ©2000 Fairchild Semiconductor Corporation
FQD13N10L / FQU13N10L Rev. C2
(TO252)
D-PAK
FQD13N10L/FQU13N10LN-ChannelQFET®MOSFET
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Thermal Characteristics
Symbol Parameter FQD13N10L / FQU13N10L Unit
VDSS Drain-Source Voltage 100 V
ID Drain Current - Continuous (TC = 25°C) 10 A
- Continuous (TC = 100°C) 6.3 A
IDM Drain Current - Pulsed (Note 1) 40 A
VGSS Gate-Source Voltage ± 20 V
EAS Single Pulsed Avalanche Energy (Note 2) 95 mJ
IAR Avalanche Current (Note 1) 10 A
EAR Repetitive Avalanche Energy (Note 1) 4.0 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns
PD Power Dissipation (TA = 25°C) * 2.5 W
Power Dissipation (TC = 25°C) 40 W
- Derate above 25°C 0.32 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300 °C
Symbol Parameter Unit
RθJC Thermal Resistance, Junction-to-Case, Max. 3.13 °C/W
RθJA Thermal Resistance, Junction-to-Ambient, Max. * 50 °C/W
RθJA Thermal Resistance, Junction-to-Ambient, Max. 110 °C/W
* When mounted on the minimum pad size recommended (PCB Mount)
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I-PAK
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www.fairchildsemi.com
FQD13N10L / FQU13N10L
N-Channel QFET® MOSFET
100 V, 10 A, 180 mΩ
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
Features
• 10 A, 60 V, RDS(on) = 180 mΩ (Max) @VGS = 10 V,
ID = 5.0 A
• Low Gate Charge (Typ. 8.7 nC)
• Low Crss (Typ. 20 pF)
• 100% Avalanche Tested
D
July 2013
(TO251)
FQD13N10L / FQU13N10L
• Low level gate drive requirements allowing direct
operation form logic drivers

2. ©2000 Fairchild Semiconductor Corporation
FQD13N10L / FQU13N10L Rev. C2
FQD13N10L/FQU13N10LN-ChannelQFET®MOSFET
(Note 4)
(Note 4)
Electrical Characteristics TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.43mH, IAS = 10A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 12.8A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially independent of operating temperature
Symbol Parameter Test Conditions Min Typ Max Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 100 -- -- V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C -- 0.09 -- V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 100 V, VGS = 0 V -- -- 1 µA
VDS = 80 V, TC = 125°C -- -- 10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1.0 -- 2.0 V
RDS(on) Static Drain-Source
On-Resistance
VGS = 10 V, ID = 5.0 A
VGS = 5 V, ID = 5.0 A
--
0.142
0.158
0.18
0.2
Ω
gFS Forward Transconductance VDS = 30 V, ID = 5.0 A -- 8.7 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 400 520 pF
Coss Output Capacitance -- 95 125 pF
Crss Reverse Transfer Capacitance -- 20 25 pF
Switching Characteristics
td(on) Turn-On Delay Time
VDD = 50 V, ID = 12.8 A,
RG = 25 Ω
-- 7.5 25 ns
tr Turn-On Rise Time -- 220 450 ns
td(off) Turn-Off Delay Time -- 22 55 ns
tf Turn-Off Fall Time -- 72 150 ns
Qg Total Gate Charge VDS = 80 V, ID = 12.8 A,
VGS = 5 V
-- 8.7 12 nC
Qgs Gate-Source Charge -- 2.0 -- nC
Qgd Gate-Drain Charge -- 5.3 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current -- -- 10 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 40 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 10 A -- -- 1.5 V
trr Reverse Recovery Time VGS = 0 V, IS = 12.8 A,
dIF / dt = 100 A/µs
-- 75 -- ns
Qrr Reverse Recovery Charge -- 0.17 -- µC
www.fairchildsemi.com

3. ©2000 Fairchild Semiconductor Corporation
FQD13N10L / FQU13N10L Rev. C2
FQD13N10L/FQU13N10LN-ChannelQFET®MOSFET
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
10
-1
10
0
10
1
150℃
※ Notes :
1. VGS
= 0V
2. 250μs Pulse Test
25℃
IDR,ReverseDrainCurrent[A]
VSD
, Source-Drain voltage [V]
0 2 4 6 8 10
10
-1
10
0
10
1
※ Notes :
1. VDS
= 30V
2. 250μs Pulse Test
-55℃
150℃
25℃
ID,DrainCurrent[A]
VGS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
0
10
1
VGS
Top : 10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom: 3.0 V
※ Notes :
1. 250μs Pulse Test
2. TC
= 25℃
ID,DrainCurrent[A]
VDS
, Drain-Source Voltage [V]
0 10 20 30 40
0.0
0.2
0.4
0.6
0.8
VGS
= 10V
VGS
= 5V
※ Note : TJ
= 25℃
RDS(ON)[Ω],
Drain-SourceOn-Resistance
ID
, Drain Current [A]
0 4 8 12 16
0
2
4
6
8
10
12
VDS
= 50V
VDS
= 80V
※ Note : ID
= 12.8A
VGS,Gate-SourceVoltage[V]
QG
, Total Gate Charge [nC]
10
-1
10
0
10
1
200
400
600
800
1000
Ciss
= Cgs
+ Cgd
(Cds
= shorted)
Coss
= Cds
+ Cgd
Crss
= Cgd
※ Notes :
1. VGS
= 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance[pF]
VDS
, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics
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4. ©2000 Fairchild Semiconductor Corporation
FQD13N10L / FQU13N10L Rev. C2
FQD13N10L/FQU13N10LN-ChannelQFET®MOSFET
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-1
1 0
0
※ N o te s :
1 . Z θ J C
(t) = 3 .1 3 ℃ /W M a x .
2 . D u ty F a c to r, D = t1
/t2
3 . T J M
- T C
= P D M
* Z θ J C
(t)
s in g le p u ls e
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Z
θJC
(t),ThermalResponse
t1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
25 50 75 100 125 150
0
2
4
6
8
10
ID,DrainCurrent[A]
TC
, Case Temperature [℃]
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
DC
10 ms
1 ms
100 µs
Operation in This Area
is Limited byR DS(on)
※ Notes :
1. TC
= 25
o
C
2. TJ
= 150
o
C
3. Single Pulse
ID,DrainCurrent[A]
VDS
, Drain-Source Voltage [V]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
※ Notes :
1. VGS
= 10 V
2. ID
= 5.0 A
RDS(ON),(Normalized)
Drain-SourceOn-Resistance
TJ
, Junction Temperature [
o
C]
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
※Notes:
1. VGS
=0V
2. ID
=250μA
BVDSS,(Normalized)
Drain-SourceBreakdownVoltage
TJ
, Junction Temperature [
o
C]
Typical Characteristics (Continued)
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 11. Transient Thermal Response Curve
t1
PDM
t2
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5. ©2000 Fairchild Semiconductor Corporation
FQD13N10L / FQU13N10L Rev. C2
FQD13N10L/FQU13N10LN-ChannelQFET®MOSFET
Charge
VGS
5V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF12V
Same Type
as DUT
Charge
VGS
5V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF12V
Same Type
as DUT
VGS
VDS
10%
90%
td(on) tr
t on t off
td(off) tf
VDD
5V
VDS
RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
t on t off
td(off) tf
VDD
5V
VDS
RL
DUT
RG
VGS
EAS = LIAS
2----
2
1
--------------------
BVDSS - VDD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
I D
t p
EAS = LIAS
2----
2
1
EAS = LIAS
2----
2
1
----
2
1
--------------------
BVDSS - VDD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
I DI D
t p
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com

6. ©2000 Fairchild Semiconductor Corporation
FQD13N10L / FQU13N10L Rev. C2
FQD13N10L/FQU13N10LN-ChannelQFET®MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RG
Same Type
as DUT
VGS • dv/dt controlled by RG
• ISD controlled by pulse period
VDD
L
I SD
10V
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RG
Same Type
as DUT
VGS • dv/dt controlled by RG
• ISD controlled by pulse period
VDD
LL
I SD
10V
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period
--------------------------D =
Gate Pulse Width
Gate Pulse Period
--------------------------
www.fairchildsemi.com

7. ©2000 Fairchild Semiconductor Corporation
FQD13N10L / FQU13N10L Rev. C2
FQD13N10L/FQU13N10LN-ChannelQFET®MOSFET
Package Dimensions
www.fairchildsemi.com
TO-252 (DPAK), MOLDED, 3LEAD, OPTION AA&AB
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT25 2-003
D-PAK
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without
notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most
recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein,
which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
TO-252 (DPAK) MOLDED, 3LEAD, OPTION AA
Dimensions in Millimeters

8. ©2000 Fairchild Semiconductor Corporation
FQD13N10L / FQU13N10L Rev. C2
FQD13N10L/FQU13N10LN-ChannelQFET®MOSFET
Package Dimensions (Continued)
www.fairchildsemi.com
Dimensions in Millimeters
I-PAK
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without
notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most
recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein,
which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
TO-251 (IPAK) MOLDED, 3LEAD, OPTION AA
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT25 1-003

9. ©2000 Fairchild Semiconductor Corporation
FQD13N10L / FQU13N10L Rev. C2
FQD13N10L/FQU13N10LN-ChannelQFET®MOSFET
www.fairchildsemi.com
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intended to be an exhaustive list of all such trademarks.
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2. A critical component in any component of a life support, device, or
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PRODUCT STATUS DEFINITIONS
Definition of Terms
2Cool™
AccuPower™
AX-CAP®
*
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficentMax™
ESBC™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green Bridge™
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
mWSaver™
OptoHiT™
OPTOLOGIC®
OPTOPLANAR®
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM®
STEALTH™
SuperFET®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS®
SyncFET™
Sync-Lock™
®*
TinyBoost™
TinyBuck™
TinyCalc™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC®
TriFault Detect™
TRUECURRENT®*
µSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
™
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
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Rev. I64
®

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