Original 30V Dual P-Channel MOSFET AO4813 4813 SOP-8 New Alpha&Omega https://authelectronic.com/original-30v-dual-p-channel-mosfet-ao4813-4813-sop-8-new-alpha-omega

1. AO4813
30V Dual P-Channel MOSFET
General Description Product Summary
VDS
ID (at VGS=-10V) -7.1A
RDS(ON) (at VGS=-10V) < 25mΩ
RDS(ON) (at VGS = -4.5V) < 40mΩ
100% UIS Tested
100% Rg Tested
Symbol
VDS
VGS
IDM
IAS, IAR
EAS, EAR
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State RθJL
°C
Thermal Characteristics
W
2
1.3TA=70°C
Junction and Storage Temperature Range -55 to 150
UnitsParameter Typ Max
°C/W
RθJA
48
74
62.5Maximum Junction-to-Ambient A
V±20Gate-Source Voltage
mJ
Avalanche Current C
36
A-27
A
The AO4813 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
V
Maximum UnitsParameter
Absolute Maximum Ratings TA=25°C unless otherwise noted
-30V
-7.1
-5.6
-40
Drain-Source Voltage -30
TA=25°C
TA=70°C
Power Dissipation B
PD
Avalanche energy L=0.1mH C
Pulsed Drain Current C
Continuous Drain
Current
TA=25°C
ID
Maximum Junction-to-Lead °C/W
°C/WMaximum Junction-to-Ambient A D
32
90
40
G
D
S
G1
S1
G2
S2
D1
D1
D2
D2
2
4 5
1
3
8
6
7
Top View
SOIC-8
Top View Bottom View
Pin1
G
D
S
Rev 9: April 2011 www.aosmd.com Page 1 of 6

2. AO4813
Symbol Min Typ Max Units
BVDSS -30 V
VDS=-30V, VGS=0V -1
TJ=55°C -5
IGSS ±100 nA
VGS(th) Gate Threshold Voltage -1.5 -2.0 -2.5 V
ID(ON) -40 A
17 25
TJ=125°C 24 33
27 40 mΩ
gFS 24 S
VSD -0.75 -1 V
IS -2.5 A
Ciss 1040 1250 pF
Coss 180 pF
Crss 125 175 pF
Rg 2 4 6 Ω
Qg(10V) 19 nC
Qg(4.5V) 9.6 nC
Qgs 3.6 nC
Qgd 4.6 nC
tD(on) 10 ns
tr 5.5 ns
tD(off) 26 ns
tf 9 ns
trr 11.5 ns
Qrr 25 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge IF=-7.1A, dI/dt=500A/µs
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=2.2Ω,
RGEN=3Ω
Gate resistance VGS=0V, VDS=0V, f=1MHz
Reverse Transfer Capacitance
Turn-Off Fall Time
Total Gate Charge
VGS=-10V, VDS=-15V, ID=-7.1A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
On state drain current
IS=-1A,VGS=0V
VDS=-5V, ID=-7.1A
VGS=-4.5V, ID=-5.6A
Forward Transconductance
Diode Forward Voltage
VGS=-10V, VDS=-5V
VGS=-10V, ID=-7.1A
RDS(ON) Static Drain-Source On-Resistance
IDSS µA
VDS=VGS ID=-250µA
VDS=0V, VGS= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
mΩ
IF=-7.1A, dI/dt=500A/µs
VGS=0V, VDS=-15V, f=1MHz
SWITCHING PARAMETERS
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage ID=-250µA, VGS=0V
A. The value of RθJA is measured with the device mounted on 1in2
FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2
FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
Rev 9: April 2011 www.aosmd.com Page 2 of 6

3. AO4813
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0
10
20
30
40
0 1 2 3 4 5
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-ID(A)
10
15
20
25
30
35
0 5 10 15 20
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
RDS(ON)(mΩΩΩΩ)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
-IS(A)
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
NormalizedOn-Resistance
VGS=-4.5V
ID=-5.6A
VGS=-10V
ID=-7.1A
10
20
30
40
50
60
2 4 6 8 10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
RDS(ON)(mΩΩΩΩ)
25°C125°C
VDS=-5V
VGS=-4.5V
VGS=-10V
ID=-7.1A
25°C
125°C
0
10
20
30
40
50
60
0 1 2 3 4 5
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
-ID(A)
VGS=-3.0V
-3.5V
-7V-10V
-4.5V
-5V
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4. AO4813
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 5 10 15 20
Qg (nC)
Figure 7: Gate-Charge Characteristics
-VGS(Volts)
0
200
400
600
800
1000
1200
1400
1600
0 5 10 15 20 25 30
-VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance(pF)
Ciss
Coss
Crss
VDS=-15V
ID=-7.1A
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Power(W)
TA=25°C
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100
-VDS (Volts)
-ID(Amps)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
10µs
10s
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100µs
10ms
1
10
100
1 10 100 1000
Time in avalanche, tA (µµµµs)
Figure 9: Single Pulse Avalanche capability (Note
C)
-IAR(A)PeakAvalancheCurrent
TA=25°C
TA=100°C
TA=150°C
TA=125°C
Rev 9: April 2011 www.aosmd.com Page 4 of 6

5. AO4813
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
ZθθθθJANormalizedTransient
ThermalResistance
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
Ton
T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
Rev 9: April 2011 www.aosmd.com Page 5 of 6

6. AO4813
VDC
Ig
Vds
DUT
VDC
Vgs
Vgs
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
-
+
-10V
VddVgs
Id
Vgs
Rg
DUT
VDC
Vgs
Vds
Id
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
L
-
+
2
E = 1/2 LIARAR
BVDSS
I AR
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
dI/dt
RM
rr
Vdd
Vdd
Q = - Idt
trr
-Isd
-Vds
F-I
-I
VDC
DUT VddVgs
Vds
Vgs
RL
Rg
Resistive Switching Test Circuit & Waveforms
-
+
Vgs
Vds
t t
t
t t
t
90%
10%
r
on
d(off) f
off
d(on)
Rev 9: April 2011 www.aosmd.com Page 6 of 6