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©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
BC517 Rev. A
BC517NPNDarlingtonTransistor
January 2005
BC517
NPN Darlington Transistor
• This device is designed for applications requiring extremely high current gain at currents to 1.0A.
• Sourced from process 05.
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics Ta = 25°C unless otherwise noted
Thermal Characteristics Ta = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 30 V
VCBO Collector-Base Voltage 40 V
VEBO Emitter-Base Voltage 10 V
IC Collector Current - Continuous 1.2 A
TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 °C
Symbol Parameter Conditions Min. Max Units
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 2.0mA, IB = 0 30 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 40 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 100nA, IC = 0 10 V
ICBO Collector Cut-off Current VCB = 30V, IE = 0 100 nA
On Characteristics *
hFE DC Current Gain VCE = 2.0V, IC = 20mA 30,000
VCE(sat) Collector-Emitter Saturation Voltage IC = 100mA, IB = 0.1mA 1 V
VBE(on) Base-Emitter On Voltage IC = 10mA, VCE = 5.0V 1.4 V
Symbol Parameter Value Units
PD Total Device Dissipation
Derate above 25°C
625
5.0
mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 °C/W
1. Collector 2. Base 3. Emitter
TO-921
2 www.fairchildsemi.com
BC517 Rev. A
BC517NPNDarlingtonTransistor
Mechanical Dimensions
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47±0.40
1.02±0.10
(0.25)4.58±0.20
4.58
+0.25
–0.15
0.38
+0.10
–0.05
0.38
+0.10
–0.05
TO-92
Dimensions in Millimeters
DISCLAIMER
FAIRCHILDSEMICONDUCTORRESERVESTHERIGHTTOMAKECHANGESWITHOUTFURTHERNOTICETOANY
PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY
ARISINGOUTOFTHEAPPLICATIONORUSEOFANYPRODUCTORCIRCUITDESCRIBEDHEREIN;NEITHERDOESIT
CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
OPTOPLANAR™
PACMAN™
FAST
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I2
C™
i-Lo™
ImpliedDisconnect™
Rev. I15
ACEx™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench
QFET
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
SILENT SWITCHER
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic
TINYOPTO™
TruTranslation™
UHC™
UltraFET
UniFET™
VCX™
Across the board. Around the world.™
The Power Franchise
ProgrammableActive Droop™
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.

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Darlington bc517

  • 1. ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com BC517 Rev. A BC517NPNDarlingtonTransistor January 2005 BC517 NPN Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from process 05. Absolute Maximum Ratings * Ta = 25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta = 25°C unless otherwise noted Thermal Characteristics Ta = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 10 V IC Collector Current - Continuous 1.2 A TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 °C Symbol Parameter Conditions Min. Max Units Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 2.0mA, IB = 0 30 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100nA, IC = 0 10 V ICBO Collector Cut-off Current VCB = 30V, IE = 0 100 nA On Characteristics * hFE DC Current Gain VCE = 2.0V, IC = 20mA 30,000 VCE(sat) Collector-Emitter Saturation Voltage IC = 100mA, IB = 0.1mA 1 V VBE(on) Base-Emitter On Voltage IC = 10mA, VCE = 5.0V 1.4 V Symbol Parameter Value Units PD Total Device Dissipation Derate above 25°C 625 5.0 mW mW/°C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 °C/W 1. Collector 2. Base 3. Emitter TO-921
  • 2. 2 www.fairchildsemi.com BC517 Rev. A BC517NPNDarlingtonTransistor Mechanical Dimensions 0.46 ±0.10 1.27TYP (R2.29) 3.86MAX [1.27 ±0.20] 1.27TYP [1.27 ±0.20] 3.60 ±0.20 14.47±0.40 1.02±0.10 (0.25)4.58±0.20 4.58 +0.25 –0.15 0.38 +0.10 –0.05 0.38 +0.10 –0.05 TO-92 Dimensions in Millimeters
  • 3. DISCLAIMER FAIRCHILDSEMICONDUCTORRESERVESTHERIGHTTOMAKECHANGESWITHOUTFURTHERNOTICETOANY PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY ARISINGOUTOFTHEAPPLICATIONORUSEOFANYPRODUCTORCIRCUITDESCRIBEDHEREIN;NEITHERDOESIT CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS. TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ FAST FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2 C™ i-Lo™ ImpliedDisconnect™ Rev. I15 ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2 CMOS™ EnSigna™ FACT™ FACT Quiet Series™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ Across the board. Around the world.™ The Power Franchise ProgrammableActive Droop™
  • 4. This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.