This document summarizes the modeling of a SiC Schottky Barrier Diode with part number TRS10E65C from Toshiba. It includes the diode model parameters, comparison graphs of forward and reverse characteristics from circuit simulation and measurement, and less than 5% error between the two. Junction capacitance characteristics are also modeled and compared from 0.1V to 100V with less than 3.5% error.

1. Device Modeling Report
COMPONENTS: SiC Schottky Barrier Diode
PART NUMBER: TRS10E65C
MANUFACTURER: TOSHIBA
REMARK: Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2013
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2. Circuit Configuration
DIODE MODEL PARAMETERS
PSpice
model
parameter
IS
N
RS
IKF
CJO
M
VJ
ISR
BV
IBV
TT
EG
Model description
Saturation Current
Emission Coefficient
Series Resistance
High-injection Knee Current
Zero-bias Junction Capacitance
Junction Grading Coefficient
Junction Potential
Recombination Current Saturation Value
Reverse Breakdown Voltage(a positive value)
Reverse Breakdown Current(a positive value)
Transit Time
Energy-band Gap
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3. Forward Current Characteristics
Circuit Simulation result
10A
9A
8A
7A
6A
5A
4A
3A
2A
1A
0A
0V
0.5V
1.0V
1.5V
2.0V
I(R1)
V_V1
Evaluation circuit
R1
0.01m
V1
U1
TRS10E65C
0Vdc
0
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4. Comparison Graph
Circuit Simulation result
Comparison table
VF (V)
IF (A)
Measurement
Simulation
%Error
0.1
0.908
0.906
-0.22
1
1.010
1.008
-0.20
2
1.080
1.075
-0.46
4
1.185
1.190
0.42
6
1.290
1.297
0.54
8
1.400
1.400
0.00
10
1.510
1.502
-0.53
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5. Junction Capacitance Characteristic
Circuit Simulation result
1.0n
100p
10p
100mV
I(V2)/(650V/1u)
1.0V
10V
100V
V(N16610)
Evaluation circuit
V2
0Vdc
V2 = 650
V1 = 0
TD = 0
TR = 1us
TF = 500ns
PW = 100us
PER = 500us
U1
TRS10E65C
V1
0
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6. Comparison Graph
Circuit Simulation result
Comparison table
CT (pF)
VR(V)
Measurement
Simulation
%Error
0.1
597.000
602.500
0.92
0.2
583.000
589.500
1.11
0.5
550.000
555.400
0.98
1
500.000
509.400
1.88
2
437.000
443.700
1.53
5
335.000
337.500
0.75
10
263.000
258.600
-1.67
20
198.000
191.100
-3.48
50
125.000
125.000
0.00
100
88.000
90.300
2.61
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7. Reverse Characteristic
Circuit Simulation result
10uA
1.0uA
100nA
10nA
1.0nA
100V
I(R1)
200V
300V
400V
500V
600V
V_V1
Evaluation circuit
R1
100m
V1
U1
TRS10E65C
0Vdc
0
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8. Comparison Graph
Circuit Simulation result
Comparison table
IR (A)
VR (V)
Measurement
Simulation
%Error
2.00E-09
408.00
388.40
-4.80
1.00E-08
480.00
475.60
-0.92
1.00E-07
580.00
579.50
-0.09
5.00E-07
650.00
649.90
-0.02
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