This document summarizes the modeling of a thyristor component. It includes:
1) Details of the thyristor part number and manufacturer.
2) Descriptions of the diode and thyristor models used in the simulation software.
3) Results of simulations matching measurements of the thyristor's gate trigger voltage (VGT), gate trigger current (IGT), maximum current (ITM), holding current (IH), and switching times (Ton and Toff). The simulations were within 1% error of the measurements.
2. DIODE MODEL
Pspice model
Model description
Parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
3. IG-VT Characteristic
Evaluation Circuit
Simulation result
Simulation
Comparison Table
Measurement Simulation % Error
IGT (mA) 40(max) 40 0
VGT (V) 0.8 0.799504 -0.06200
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
4. ITM-VTM Characteristic
Evaluation Circuit
Simulation result
Simulation
Comparison Table
At ITM=50A Measurement Simulation % Error
VTM(V) 1.8(max) 1.7969 -0.17222
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
5. Holding Characteristic (IH)
Evaluation Circuit
Simulation result
Simulation
Comparison Table
VD=12V Measurement Simulation % Error
IH(mA) 20 20.049 0.24500
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
6. Switching Time Characteristic
Evaluation Circuit
Simulation result
Simulation
Comparison Table
Measurement Simulation %Error
Ton(us) 1.5 1.4600 -2.66667
Toff(us) 15 15.299 1.99333
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004