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Device Modeling Report




COMPONENTS:
DIODE/ SCHOOTTKY RECTIFIER / STANDARD
PART NUMBER: D5S9M
MANUFACTURER: SHINDENGEN




               Bee Technologies Inc.



 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
PSpice model
                                   Model description
 parameter
     IS        Saturation Current
     N         Emission Coefficient
     RS        Series Resistance
    IKF        High-injection Knee Current
    CJO        Zero-bias Junction Capacitance
     M         Junction Grading Coefficient
     VJ        Junction Potential
    ISR        Recombination Current Saturation Value
     BV        Reverse Breakdown Voltage(a positive value)
    IBV        Reverse Breakdown Current(a positive value)
     TT        Transit Time
    EG         Energy-band Gap




         All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Forward Current Characteristic


Circuit Simulation Result




Evaluation Circuit

                     R1

                     0.01m


   0Vdc   V1                         U1



                             D5S9M




                     0




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph


Circuit Simulation Result




Simulation Result

                              Vfwd(V)            Vfwd(V)
           Ifwd(A)                                                    %Error
                            Measurement         Simulation
                     0.1           0.268               0.262                  -2.43
                     0.2           0.287               0.285                  -0.77
                     0.5           0.320               0.325                   1.41
                       1           0.370               0.369                  -0.30
                       2           0.440               0.440                   0.05
                       5           0.630               0.632                   0.35
                      10           0.890               0.905                   1.72
                      20           1.460               1.456                  -0.25




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Junction Capacitance Characteristic


Circuit Simulation Result




Evaluation Circuit

                     V2


                          0Vdc

   V2 = 40      V1
   V1 = 0                                    U1
   TD = 0
   TR = 10ns
   TF = 50ns
   PW = 5us                          D5S9M
   PER = 10us


                                 0




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph


Circuit Simulation Result




Simulation Result

                               Cj(pF)            Cj(pF)
           Vrev(V)                                                   %Error
                            Measurement        Simulation
                      1            505.00            525.00                    3.96
                      2            385.00            400.00                    3.90
                      5            270.00            269.50                   -0.19
                     10            180.00            182.00                    1.11
                     20            140.00            138.80                   -0.86
                     50             89.00             89.50                    0.56
                     90             68.00             67.70                   -0.44




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

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SPICE MODEL of D5S9M (Standard Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: DIODE/ SCHOOTTKY RECTIFIER / STANDARD PART NUMBER: D5S9M MANUFACTURER: SHINDENGEN Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 2. PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 3. Forward Current Characteristic Circuit Simulation Result Evaluation Circuit R1 0.01m 0Vdc V1 U1 D5S9M 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 4. Comparison Graph Circuit Simulation Result Simulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.1 0.268 0.262 -2.43 0.2 0.287 0.285 -0.77 0.5 0.320 0.325 1.41 1 0.370 0.369 -0.30 2 0.440 0.440 0.05 5 0.630 0.632 0.35 10 0.890 0.905 1.72 20 1.460 1.456 -0.25 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 5. Junction Capacitance Characteristic Circuit Simulation Result Evaluation Circuit V2 0Vdc V2 = 40 V1 V1 = 0 U1 TD = 0 TR = 10ns TF = 50ns PW = 5us D5S9M PER = 10us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 6. Comparison Graph Circuit Simulation Result Simulation Result Cj(pF) Cj(pF) Vrev(V) %Error Measurement Simulation 1 505.00 525.00 3.96 2 385.00 400.00 3.90 5 270.00 269.50 -0.19 10 180.00 182.00 1.11 20 140.00 138.80 -0.86 50 89.00 89.50 0.56 90 68.00 67.70 -0.44 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004