SPICE MODEL of 2SK3703 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: MOSFET (Professional Model)
PART NUMBER: 2SK3703
MANUFACTURER: SANYO
REMARK: Body Diode (Professional Model) /
ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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3. Transconductance Characteristic
Circuit Simulation Result
40
Measurement
35 Simulation
30
25
gfs(S)
20
15
10
5
0
0.0 5.0 10.0 15.0 20.0 25.0 30.0
Drain Current ID (A)
Comparison table
gfs(S)
Id(A) Error (%)
Measurement Simulation
1 8.200 8.518 3.87
2 11.300 11.638 2.99
5 17.000 17.238 1.40
10 22.500 22.755 1.13
20 29.200 29.408 0.71
30 33.500 33.785 0.85
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
3

4. Vgs-Id Characteristic
Circuit Simulation result
50A
45A
40A
35A
30A
25A
20A
15A
10A
5A
0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
V2
U1
2SK3703
10
V1
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
4

5. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
1 2.350 2.392 1.80
2 2.500 2.491 -0.36
5 2.700 2.698 -0.09
10 2.950 2.946 -0.12
20 3.300 3.328 0.84
50 4.200 4.186 -0.34
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
5

6. Rds(on) Characteristic
Circuit Simulation result
15A
12A
9A
6A
3A
0A
0V 100mV 200mV 300mV
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
VDS
U1
2SK3703
0Vdc
V1
10
0
Simulation Result
ID = 15A, VGS = 10V Measurement Simulation Error (%)
R DS (on) m 20.000 20.000 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
6

7. Gate Charge Characteristic
Circuit Simulation result
10V
9V
8V
7V
6V
5V
4V
3V
2V
1V
0V
0 5n 10n 15n 20n 25n 30n 35n 40n
V(W1:3)
Time*1mA
Evaluation circuit
I2
D2
Dbreak 30
U1
2SK3703
PER = 1000u W1
PW = 600u +
TF = 5n VDD
TR = 5n -
TD = 0 I1 W
I2 = 1m IOFF = 1mA 30
I1 = 0 ION = 0uA
0
Simulation Result
VDD=30V, ID=30A,
Measurement Simulation Error (%)
VGS=10V
Qgs nC 6.500 6.497 -0.04
Qgd nC 11.500 11.520 0.17
Qg nC 40.000 39.950 -0.12
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
7

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd (pF)
VDS (V) Error (%)
Measurement Simulation
0.000 500.000 500.000 0.000
5.000 160.000 158.860 -0.71
10.000 100.000 101.660 1.66
15.000 76.000 76.640 0.84
20.000 62.000 62.300 0.48
25.000 53.000 52.897 -0.19
30.000 47.000 46.205 -1.69
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
8

9. Switching Time Characteristic
Circuit Simulation result
14V
12V
10V
8V
6V
4V
2V
0V
0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us 1.4us
V(U1:G) V(U1:D)/3
Time
Evaluation circuit
L2 RL
50nH 2
R1 L1
U1
2SK3703 VDD
V1 = 0 30nH 30.3Vdc
V2 = 20 V2 50
TD = 1u
TR = 5n R2
TF = 5n 50
PW = 10u
PER = 20u
0
Simulation Result
ID=15A, VDD=30V
Measurement Simulation Error(%)
VGS=0/10V
td(on) ns 16.500 16.496 -0.02
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
9

10. Output Characteristic
Circuit Simulation result
50A
45A
10, 8 6 4
40A
35A
30A
25A
20A
15A
VGS=3V
10A
5A
0A
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V 2.0V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
V2
U1
2SK3703
V1 2.0
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
10

11. Forward Current Characteristic
Circuit Simulation Result
50A
10A
1.0A
100mA
10mA
1.0mA
0V 0.3V 0.6V 0.9V 1.2V
I(Vsense)
V_VSD
Evaluation Circuit
Vsense
0Vdc
U1
VSD 2SK3703
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
11

12. Comparison Graph
Circuit Simulation Result
Simulation Result
VSD(V)
IDR(A) %Error
Measurement Simulation
0.001 0.4950 0.4926 -0.48
0.01 0.5600 0.5619 0.34
0.1 0.6300 0.6319 0.30
1 0.7100 0.7090 -0.14
2 0.7400 0.7386 -0.19
5 0.7900 0.7915 0.19
10 0.8500 0.8509 0.10
20 0.9400 0.9386 -0.15
30 1.0100 1.0110 0.10
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
12

13. Reverse Recovery Characteristics
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
19.6us 19.8us 20.0us 20.2us 20.4us 20.6us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.40v V1
V2 = 10.60v U1
TD = 15ns D2SK3703_P
TR = 10ns
TF = 10ns
PW = 20us
PER = 50us
0
Compare Measurement vs. Simulation
Characteristics Unit Measurement Simulation Error (%)
trj ns 20.000 19.700 -1.50
trb ns 46.000 46.020 0.04
trr ns 66.000 65.720 -0.42
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
13

14. Reverse Recovery Characteristic Reference
Measurement
Trj=20(ns)
Trb=46(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
14

15. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
R1
0.001m
V1
0Vdc
R2
U1
100MEG 2SK3703
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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