Peregrine's co-founder and CTO Ron Reedy gave this presentation at European Microwave Week in Rome.

1. Allow Me to Introduce Myself…
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I’M RON AND I’M A CMOS-AHOLIC

2. What I believe…
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✓

3. Seeking RF CMOS Integration Since 1988
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4. Peregrine: Solving the World’s Toughest RF Challenges
Fabless semiconductor company
• Pioneered use of CMOS SOI for RF
• Performance on par with GaAs, with all the
Peregrine Semiconductor Proprietary 4
benefits of CMOS
• Perfected technology over 25 years
Serving multiple end-markets
• Leading innovator in the mobile handset space
• Bringing RF innovation to aerospace,
automotive test & measurement and other
industrial markets
• Initial Public Offering August 2012
• Headquarters in San Diego, CA
• 300+ employees

5. A Unique form of Silicon-on-Insulator (SOI) Technology
Near-Perfect
UltraCMOS® Silicon-on-Sapphire
+ Insulating Substrate
SAPPHIRE
 Proven SOI Technology
 Outstanding RF/Microwave
Properties
 Mature Supply Chain
Most Widely Used
Semiconductor Technology
CMOS
 Scalable
 Lowest Power and Cost
 Fabless Model
Industry-Leading RF Semiconductor Technology
Combining the Best of the Best
 Unique Position in Industry
 Better Performance
 Enables Integration
 RF Smaller
 Analog Smarter
 Digital

6. UltraCMOS® Technology vs. Competing RF Processes
Bulk CMOS Process UltraCMOS 1-9 Process
contact
silicon layer
oxide contact gate gate
contact
insulating sapphire substrate
p-channel FET n-channel FET
contact
p-epitaxial layer
UltraCMOS 10 Process
p+ base
AlGaAs
emitter
GaAs HBT Process
isolation
implant
emitter
contact
base
contact
n- GaAs collector
base
contact
collector
contact
n+ GaAs subcollector
semi-insulating GaAs substrate
npn-bipolar HBT
contact gate isolation
n+ p+ p+ n+ n+ p+
p+substrate
n-well
gate contact oxide
body
tie
p-well
p-channel FET n-channel FET
contact
contact gate isolation
gate contact
p+ p+ n+ n+
Buried oxide layer
High resistivity Si substrate
p-channel FET n-channel FET

7. RFFE Technology Comparison
Digital
Logic
Analog &
Mixed
Signal
Circuits
Low-
Noise
Amplifiers
High-Quality
Passives
and Filters
Complex
RF
Switches
Handles high
RF voltages
Power
Amplifiers
Monolithic
RF SOC
Cost
SOS
CMOS
   BEST BEST BEST  BEST 
Bulk
CMOS BEST        BEST
Si
Bipolar
 BEST       
SOI
CMOS
        
Si
BiCMOS
 BEST       
SiGe
BiCMOS
        
III-V
MESFET
  BEST      
III-V
Bipolar
      BEST  
RF SoC integration requires  or better. Х means the technology cannot integrate the function

8. UltraCMOS® Switches Launched the RFCMOS Revolution
• Reduced FEM footprint by nearly half
• Reduced assembly costs
• Improved quality & reliability
• Set linearity levels over GaAs
3.0 mm
GaAs ASM
Three IC technologies needed
3.8 mm
CMOS
Decode/Bias
GaAs
SP9T
UltraCMOS ASM
TX LPFs integrated into substrate
LPF
IPD UltraCMOS™
SP9T
Solution
2.5mm
2.5 mm
>45% reduction in area
All devices are SMD
Simplified supply & manufacturing
Peregrine Semiconductor Proprietary 8

9. Switches Were the First Example of “Intelligent Integration”
• UltraCMOS technology supports multiple capabilities simultaneously
• Enables integration of many additional “ancillary” functions
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ESD
CHARGE
PUMPS
SPI
VOLTAGE
REGULATORS
CORE
CAPABILITY
MICROWAVE
ANALOG
DIGITAL
RF
NO COMPROMISE IN RF PERFORMANCE

10. UltraCMOS® Technology - Enabling μWave Integration
Peregrine Semiconductor Proprietary 10
f
Serial
Bus
Control
TX_IN
CLK
DATA
EN
VDD
VSS
RX_OUT
RX_AMP
TX_AMP
MICROWAVE
PERFORMANCE
MMIC DESIGN
TECHNIQUES
MULTI BAND
TUNING
CONTROL LOGIC &
CALIBRATION
MMIC, DIGITAL &
ANALOG INTEGRATION

11. Developing Universal Flexible Products
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Industrial
Aerospace &
Defense
Test &
Measurement
Wired
Broadband
Wireless
Infrastructure
AGGREGATION OF REQUIREMENTS
WI PRODUCT
WIRED
PRODUCT
T&M
PRODUCT
AEROSPACE
PRODUCT
INDUSTRIAL
PRODUCT
UNIVERSAL
FLEXIBLE
PRODUCT
• Increased Volume
• Reduction in Product SKU’s
• Cost Effective

12. UltraCMOS Global 1 Integrated System
No compromise in RF with the Integration benefits of CMOS
What is included in Global 1
• 3-path MMMB PA, Post PA switching, Antenna switch & Antenna tuner
• Support for envelope tracking
• Common RFFE MIPI interface
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MMMB PA
Post-PA Switch Antenna Switch Tuner

13. Integration Drives Improved RF Performance
5 Unique
Mid Band Outputs
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Low Band PA
690-915MHz
Mid Band PA
1710-2100MHz
High Band PA
2300-2700MHz
5 Unique
Low Band Outputs
RFFE MiPi
Control Interface
Common Bias
Generation
4 Unique
High Band
Outputs
Tunable input, inter-stage and output matching

14. Benefits of Intelligent Integration
 Configurability
 Flexibility
 Reliability
 Repeatability
 Ease of Use
 Smaller Form Factor
 Performance
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Intelligent Integration enables our end customers to deliver improved
system performance and quality products with streamlined
manufacturing and supply chain

15. Thank You