This document provides specifications for the Signetics 25120 fully encoded, random access write-only memory. Key details include:
- It employs both enhancement and depletion mode P-channel, N-channel and Neuchannel MOS devices.
- A single TTL level clock phase is required to drive the on-board multi-port clock generator. Data refresh is accomplished during CB and LH periods.
- The static memory cells are operated dynamically to yield extremely low power dissipation. All inputs and outputs are directly TTL compatible when proper interfacing circuitry is employed.
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FULLY ENCODED, 9046 X N, RANDOM ACCESS
WRITE-ONLY-MEMORY
25120
FINAL SPECIFICATION
(10)
PART IDENTIFICATION
TYPE “n” TEMP. RANGE PACKAGE
25120 0 0 to –70°C Whatever’s
Right
15. SIGNETICS • 25120 FULLY ENCODED, 9046 X N, RANDOM ACCESS WRITE ONLY MEMORY
TYPICAL CHARACTERISTIC CURVES
BIT CAPACITY VS. TEMP.
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
-25 0 25 50 75 100
TEMPERATURE (°C)
BITCAPACITY
GUARANTEE
TYPICAL
TYPICAL
TYPICAL
Iff VS. Vff
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0 5 10 15 20 25
Vff
Vff (VOLTS AC)
Iff
25120
0
3
6
9
12
15
18
21
24
27
30
0 5 10 15 20 25 30 35 40 45 50
NUMBER OF SOCKET INSERTIONS
NUMBEROFREMAININGPINS
25120
AQL VS. SELLING PRICE
0.01
0.1
1
10
0.1 1 10 100
SELLING PRICE ($)
AQL(%)
25120
NORMAL
SLOW PAYING
CUSTOMERS
811 E. ARQUES AVENUE • SYNNYVALE CALIFORNIA • 94086
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D304 MOS-005-39 Copyright 1972 – printed in U.S.A.