The COREMA system allow for non-destructive resistivity testing of semi-insulating wafers made with materials such as SiC, GaN, GaAs and CdZnTe. The range is 1E5- 1E12 ohm-cm.

3. Worldwide Representation Moritani & Co.,Ltd. 1-4-22 Yaesu Chuo-Ku Tokyo 103-8680 Japan Phone: 81-3-3278-6163 Fax: 81-3-3278-6021 [email_address] www.sales.moritani.co.jp Hologenix, Inc. 5932 Bolsa Avenue Suite 104 Huntington Beach CA 92649 USA Phone : (714) 903-5999 Fax: (714) 903-5959 [email_address] www.hologenix.com SemiMap Scientific Instruments Tullastr. 67 79108 Freiburg Germany Phone: *49(0)761 5577878 Fax: *49(0)761 5577 879 [email_address] www.s e mimap.de Japan US and East Asia Europe

4. SemiMap pre-History Strong involvement in DIN/SEMI compound semiconductor standardization activities since 1990 Sale of COREMA-WT systems to industry and academia in Europe, US and Japan 1998-2003 Representation in US/Japan/Asia by Hologenix Inc., Los Angeles 1998 Multi- purpose application of TDCM for in-house research and material control; extensive presentation and publication activity; development of commercial system 1992 - 97 Basic paper by Stibal, Windscheif and Jantz; Delivery of prototype wafer topography system to Wacker Chemitronic, later transferred to Freiberger Compound Materials (FCM) 1991 Start of research activity at FhG-IAF to evaluate high resistivity semiconductors with contactless capacitive techniques (TDCM) 1989

5. SemiMap History Participation in SiC resistivity Round Robin, Presentations at ICSCRM in Otsu, Japan 2007 Cooperation with Moritani & Co Ltd. Tokyo, Japan Development of procedures to analyse locally inhomogeneous material 2006 Development and market introduction of CORTEMA-VT/ER 2005 Extension of material analysis to SiC, InP, GaN, Cd(Zn)Te, FZ-Si 2004 First SemiMap COREMA-WT sale, development and market introduction of COREMA-RM July 2003 Foundation of Semimap Scientific Instruments GmbH, transfer of technical know how and fabrication from FhG/IAF to SemiMap April 2003

10. SemiMap Product Line Measurement of sheet resistance (>10 5  of epitaxial buffer layers COREMA-ER Measurement of resistivity at variable temperature up to 400 o C, evaluation of carrier activation energy via Arrhenius plot COREMA-VT Contactless evaluation of the carrier mobility (>1000 cm 2/ Vs) manual wafer shifting for selection of measurement spot. COREMA-RM Contactless mapping of wafers up to 200 mm ø 1 mm resolution; resistivity range 1x10 5 to 1x10 12  cm , automated measurement routines, statistical analysis. COREMA-WT

11. Technical Details (I) COREMA - WT

12. Technical Details (II) COREMA - WT

13. Technical Details (III) COREMA - WT

14. Technical Details (I) COREMA - RM

16. Technical Details (III) COREMA-RM Magnetic Field  0

18. Technical Details (V) COREMA-RM new method standard method Acceptance SI material only µ > 1000 cm 2 /Vs general Applicability easy difficult Evaluation of SI material < 1% ~ 5% Repeatability ~ 30 s ~ 10 min Sample insertion and measurement time none ~ 15 min Sample preparation obsolete needed, critical Ohmic contacts nondestructive necessary Wafer cutting COREMA - RM CONVENTIONAL HALL ISSUE

19. Technical Details (I) COREMA-VT Substrate Heated Support Sensor Charge Amplifier

20. Technical Details (II) COREMA-VT

21. Technical Details (III) COREMA-VT

23. Technical Details (I) COREMA-ER Buffer layers on semi-insulating substrates are analysed with a COREMA-VT harware system using a modified measurement and evaluation procedure. The epilayer resistance is obtained using a calibration factor depending on the design and size of the sensor. The epilayer resistivity is calulated using the layer thickness. Epilayer Substrate Support Sensor Charge Amplifier

27. Resistivity Topography Repeatability test

28. Resistivity Topography GaAs Substrate Production Control

32. Resistivity Topography Strongly and locally inhomogeneous SiC material

33. Identification and evaluation of locally inhomogeneous matertial using analysis of charge transients

34. Bi-exponential fit

35. Resistivity Topography Analysis of Persistent Photoconductivity Mean: 1.12 x10 10  cm Mean: 1.65 x10 11  cm Resistivity after 3h storage in darkness Resistivity after 48h storage in darkness

36. Resistivity Topography CdTe sample

38. Comparison of mobility data

39. Mobility Measurement Plan Mobility evaluation using a customer specified measurement plan 150 mm GaAs wafer

40. High Temperature Resistivity Measurement 2“ SiC wafer Temperature range 40 – 200 0 C Resistivity range 3x10 5 – 1x10 10 Ω cm Not semi-insulating at 300 0 C E a = (kT 1 T 2 )/(T 2 -T 1 ) * ln [  (T 1 ) /  (T 2 ) ]

41. High Temperature Resistivity Measurement 2“ SiC wafer Temperature range 260 – 340 0 C Resistivity range 5.6 x10 9 – 1.8x10 11 Ω cm Semi-insulating at 300 0 C

42. Lateral dependence of activation energy

43. Arrhenius Plot of exploratory Wafer

44. High Temperature Resistivity Measurement 2“ SiC wafer Temperature range 92 – 256 0 C Resistivity range 9.0 x10 8 – 2.3x10 10 Ω cm High resistivity, but small activation energy Exhibits strong persistent photoconductivity

45. Persistent Photoconductivity Heating Curve

46. Evaluation of GaN epitaxial layers Epilayer thickness (µm) Resistance SemiMap (Ω square) Resistivity SemiMap (Ω cm) Resistance Lehighton (Ω square) 2 6.05 E6 1.2 E 3 beyond limit 2 5.0 E4 (at lower limit) 1.0 E 1 5 E4 (at upper limit) 2 1.0 E11(at upper limit) 2.0 E 7 beyond limit