SPICE MODEL of RURD660S , TC=80degree (Professional Model) in SPICE PARK

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SPICE MODEL of RURD660S , TC=80degree (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

Device Modeling Report

COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ PROFESSIONAL
PART NUMBER: RURD660S
MANUFACTURER: FAIRCHILD
REMARK: TC=80 degree

Bee Technologies Inc.

All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

Forward Current Characteristic Reference

All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

Forward Current Characteristic

Circuit Simulation Result

5.0A

1.0A

100mA

10mA
0.1V 1.0V 2.0V
I(X_U1.D_D1)
V_V1

Evaluation Circuit

R1

0.01m

U1
V1
0Vdc RURD660S_80p

0

All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

Comparison Graph

Circuit Simulation Result

Simulation Result

Vfwd(V) Vfwd(V)
Ifwd(A) %Error
Measurement Simulation
0.01 0.448 0.444 0.893
0.02 0.492 0.497 -1.016
0.05 0.570 0.568 0.351
0.1 0.620 0.623 -0.484
0.2 0.684 0.680 0.585
0.5 0.766 0.765 0.131
1 0.840 0.841 -0.119
2 0.934 0.933 0.107

All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

Capacitance Characteristic

Circuit Simulation Result

1.0n

100p

10p

1.0p
10mV 100mV 1.0V 10V 100V
-I(X_U1.D_D1)/(600V/1u)
V(N00037)

Evaluation Circuit

V2

0Vdc

V2 = 600 V1
V1 = 0 U1
TD = 0
TR = 1u
TF = 10ns RURD660S_80p
PW = 5us
PER = 10us

0

All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

Comparison Graph

Circuit Simulation Result

Simulation Result

Cj(pF) Cj(pF)
Vrev(V) %Error
Measurement Simulation
0 120.800 120.800 0.000
0.5 77.800 78.159 -0.461
1 62.800 63.576 -1.236
2 50.000 50.173 -0.346
5 35.000 35.500 -1.429
10 27.000 27.200 -0.741
20 20.800 20.893 -0.447
50 14.500 14.454 0.317

All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

Reverse Recovery Characteristic

Circuit Simulation Result

200mA

100mA

-0mA

-100mA

-200mA

19.92us 20.00us 20.08us 20.16us 20.24us
I(R1)
Time

Evaluation Circuit

R1

50

V1 = -9.39V V1
V2 = 10.71V D1
TD = 0
TR = 10ns
TF = 10ns RURD660S_80s
PW = 20us
PER = 50us

0

Compare Measurement vs. Simulation

Measurement Simulation %Error
trj 28.8 ns 28.90 ns 0.347
trb 84.0 ns 84.07 ns 0.083

All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

Reverse Recovery Characteristic Reference

Measurement

Trj =28.8 (ns)
Trb= 84.0(ns)
Conditions: Ifwd=Irev=0.2(A), Rl=50

Example

Relation between trj and trb

All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

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SPICE MODEL of RURD660S , TC=80degree (Professional Model) in SPICE PARK

1. Device Modeling Report COMPONENTS: DIODE/ GENERAL PURPOSE RECTIFIER/ PROFESSIONAL PART NUMBER: RURD660S MANUFACTURER: FAIRCHILD REMARK: TC=80 degree Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

2. PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

4. Forward Current Characteristic Circuit Simulation Result 5.0A 1.0A 100mA 10mA 0.1V 1.0V 2.0V I(X_U1.D_D1) V_V1 Evaluation Circuit R1 0.01m U1 V1 0Vdc RURD660S_80p 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

5. Comparison Graph Circuit Simulation Result Simulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.01 0.448 0.444 0.893 0.02 0.492 0.497 -1.016 0.05 0.570 0.568 0.351 0.1 0.620 0.623 -0.484 0.2 0.684 0.680 0.585 0.5 0.766 0.765 0.131 1 0.840 0.841 -0.119 2 0.934 0.933 0.107 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

6. Capacitance Characteristic Circuit Simulation Result 1.0n 100p 10p 1.0p 10mV 100mV 1.0V 10V 100V -I(X_U1.D_D1)/(600V/1u) V(N00037) Evaluation Circuit V2 0Vdc V2 = 600 V1 V1 = 0 U1 TD = 0 TR = 1u TF = 10ns RURD660S_80p PW = 5us PER = 10us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

7. Comparison Graph Circuit Simulation Result Simulation Result Cj(pF) Cj(pF) Vrev(V) %Error Measurement Simulation 0 120.800 120.800 0.000 0.5 77.800 78.159 -0.461 1 62.800 63.576 -1.236 2 50.000 50.173 -0.346 5 35.000 35.500 -1.429 10 27.000 27.200 -0.741 20 20.800 20.893 -0.447 50 14.500 14.454 0.317 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

8. Reverse Recovery Characteristic Circuit Simulation Result 200mA 100mA -0mA -100mA -200mA 19.92us 20.00us 20.08us 20.16us 20.24us I(R1) Time Evaluation Circuit R1 50 V1 = -9.39V V1 V2 = 10.71V D1 TD = 0 TR = 10ns TF = 10ns RURD660S_80s PW = 20us PER = 50us 0 Compare Measurement vs. Simulation Measurement Simulation %Error trj 28.8 ns 28.90 ns 0.347 trb 84.0 ns 84.07 ns 0.083 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

9. Reverse Recovery Characteristic Reference Measurement Trj =28.8 (ns) Trb= 84.0(ns) Conditions: Ifwd=Irev=0.2(A), Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

SPICE MODEL of RURD660S , TC=80degree (Professional Model) in SPICE PARK

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