Wei Li has published extensively in international scientific journals and books as well as international conference proceedings. Some of his notable publications include papers on spectral characterization of monolithic mode-locked lasers, superluminescent diodes at 1.55 μm, characterization of 1550 nm Fabry-Perot laser structures, and invited chapters in books on dilute nitride semiconductors and GaInNAs quantum well lasers. He has also published work on extending the emission wavelength of GaInNAs/GaAs quantum well lasers beyond 1300 nm and high performance 1.32 μm GaInNAs/GaAs single-quantum-well lasers.

1. Wei Li
发表的论文:
A. International scientific journals & books:
1) P. Acedo, H. Lamela, S. Garidel, C. Roda, J.P. Vilcot, G. Carpintero, I.H. White, K. A.
Williams, M. Thompson, W. Li, M. Pessa, M. Dumitrescu and S. Hansmann “Spectral
Characterization of Monolithic Mode-locked Lasers for mm-wave generation and signal
processing” Electronics Letters, 42, pp. 928-929, 2006.
2) Wei Li, R. Rönkkö, A. Rydefalk, P. Pöyhönen, M. Pessa, Superluminescent diodes at
1.55 µm based on quantum-well and quantum-dot active regions Superluminescence
LED, SPIE 5739, pp. 116-121 (2005).
3) Wei Li, R. Rönkkö, M. Peltola, A. Rydefalk, M. Pessa, H. Schöll, S. Garidel. A.
Williams, P. Moreno, H. Lamela, M. Cavallari, Characterization of 1550 nm Fabry-Perot
Laser Structures for Application as Mode-Locked Pulse Sources, SPIE 5452, pp. 130-137
(2004).
4) Wei Li, M. Pessa, Invited Chapter in the book “Dilute Nitride Semiconductors for
Optoelectronic Devices” of the book “Handbook of Semiconductor Nanostructures and
Devices, published in 2005 by American Scientific Publishers.
5) Wei Li, M. Pessa, T. Jouhti, C.S. Peng, E.-M. Pavelescu, Invited chapter "GaInNAs
quantum well laser" in Encyclopedia of Nanoscience and Nanotechnology published in
2004 by American Scientific Publishers, vol.3, page 719-730.
6) Wei Li, J. Konttinen, T. Jouhti, C.S. Peng, E.-M. Pavelescu, M. Suominen, M. Pessa,
Extending the emission wavelength of GaInNAs/GaAs quantum well lasers beyond 1300
nm, in the book “Advanced Nanomaterials and Nanodevices” published by the Institute
of Physics Publishing 2003, pp. 251-260 (2003).
7) Wei Li, C.S. Peng, T. Jouhti, J. Konttinen, E.-M. Pavelescu, M. Suominen, M.
Dumitrescu, M. Pessa, High performance 1.32 μm GaInNAs/GaAs single-quantum-well
lasers grown by molecular beam epitaxy, SPIE 4651, p101.
8) Wei Li, T. Ahlgren, J. Dekker, M. Pessa, Origin of improved luminescence efficiency
after annealing of Ga(In)NAs materials, SPIE 4650, p207.
9) Wei Li, Tomi Jouhti, Chang Si Peng, Janne Konttinen, Pekka Laukkanen, Emil-Mihai
Pavelescu, Mihail Dumitrescu, and Markus Pessa, Low threshold current 1.32 μm
GaInNAs/GaAs single quantum well lasers grown by molecular beam epitaxy, Appl.
Phys. Lett. 79, 3386(2001).
10) Wei Li, Markus Pessa, Tommy Ahlgren and James Dekker, Origin of improved
luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular
beam epitaxy, Appl. Phys. Lett. 79, 1094(2001).
11) Wei Li, Markus Pessa, Juha Toivonen and Harri Lipsanen, Doping and carrier transport in
GaInNAs alloys, Physical Review B, 64, 113308(2001).
12) Wei Li, Markus Pessa, and Jari Likonen, Lattice parameters of GaAsN: deviation of
Vegard' law. Appl. Phys. Lett. 78, 2864(2001).
13) Wei Li, Jani Turpeinen, Petri Melanen, Pekka Savolainen, Petteri Uusimaa, and Markus
Pessa, Effects of rapid thermal annealing on strain-compensated GaInNAs/GaAsP
quantum well structures and lasers, Appl. Phys. Lett. 78, 91 (2001).
14) Wei Li, Markus Pessa, Lattice contraction in carbon-doped GaAs epilayers, Phys. Rev. B
57, 14627(1998).

2. Wei Li
15) Wei Li, Peder Bergman, Ivan Ivannov, Wei-Xin Ni, H. Amano, I. Akasaki, High-
resolution X-ray analysis of InGaN/GaN superlattices grown on sapphire substrates with
GaN layers, Appl. Phys. Lett. 69, 3390(1996).
16) Wei Li, J. Lammasniemi, A. B. Kazantsev, R. Jaakkola, T. Mäkeläand M. Pessa,
GaInP/AlInP tunnel junction for GaInP/GaAs tandem solar cells, Electron. Lett. 34,
406(1998).
17) Wei Li, Wei-Xin Ni, Residual strain in GaN epilayers grown on sapphire and (6H) SiC
substrates, Appl. Phys. Lett. 68, 2705(1996).
18) Wei Li, Zhanguo Wang, Jiben Liang, Qiwei Liao, Bo Xu, Zhanping Zhu, and Bin Yang,
Investigation of the epitaxial growth of InxGa1-xAs on GaAs (001) and extension of two
dimensional-three dimensional growth mode transition, Appl. Phys. Lett. 66,
1080(1995).
19) Wei Li, Peder Bergman, Bo Monemar, H. Amano, I. Akasaki, Photoluminescence decay
dynamics in an InGaN/GaN/AlGaN single quantum well, J. Appl. Phys. 81, 1005(1997).
20) Wei Li, Zhanguo Wang, Jiben Liang, Bo Xu, Zhanping Zhu, Zhiliang Yuan, Jian Li,
Photoluminescence studies of single submonolayer InAs/GaAs structures grown GaAs
(001) matrix, Appl. Phys. Lett. 67, 1874(1995).
21) Wei Li, Zhanguo Wang, Aimin Song, Jiben Liang, Bo Xu, Zhanping Zhu, Wanhua
Zheng, Qiwei Liao, and Bin Yang, Photoluminescence studies of very high-density two-
dimensional electron gases in pseudomorphic modulation-doped quantum wells, J. Appl.
Phys. 78, 593(1995).
22) Wu Ju, Wei Li, T. W. Fan, Z. G. Wang, X. F. Duan, Breaking up of the misfit
dislocations in GaAs/In0.3Ga0.7As/GaAs heterostructures, Appl. Phys. Lett. 67,
846(1995).
23) Wei Li, Jari Likonen, Jouko Haapamaa, Markus Pessa, Be redistribution in GaInP and
growth of GaInP/AlInP tunnel diode by gas source molecular beam epitaxy, J. Cryst.
Growth 209, 459(2000).
24) Wei Li, Jari Likonen, Jouko Haapamaa, Markus Pessa, Study of concentration-dependent
Be diffusion in GaInP layers grown by gas source molecular beam epitaxy, J. Appl.
Phys. 87, 7592(2000).
25) Wei Li, Zhanguo Wang, Jiben Liang, Bo Xu, Zhanping Zhu, Optical characterizations of
single submonolayer InAs/GaAs structures grown GaAs (001) matrix, Chinese Physics
Letters 9, 261(1995).
26) Wei Li, Aimin Song, Zhanguo Wang, Jiben Liang, Bo Xu, Zhanping Zhu, Wanhua
Zheng, Qiwei Liao, and Bin Yang, Optical properties of highly dense 2DEG modulation-
doped AlGaAs/InGaAs/GaAs quantum well structures, Chinese Physics Letters 11,
758(1994).
27) Wei Li, S. Laaksonen, J. Haapamaa, M. Pessa, Growth of device-quality GaAs layer
directly on (001) Ge by both solid-source and gas-source molecular beam epitaxy, J.
Crystal. Growth 227/228, 104(2001).
28) Wei Li, Jani Turpeinen, Petri Melanen, Pekka Savolainen, Petteri Uusimaa, and Markus
Pessa, Growth of strain-compensated GaInNAs/GaAsP quantum wells for 1.3 um lasers,
J. Crystal. Growth 230, 533(2001).
29) E. Vainonen-Ahlgren, T. Ahlgren, J. Likonen, S. Lehto, J. Keinonen, Wei Li, and J.
Haapamaa, Identification of vacancy charge states in diffusion of arsenic in germanium,
Appl. Phys. Lett. 77, 690(2000).

3. Wei Li
30) Wei Li, Jani Turpeinen, Petri Melanen, Pekka Savolainen, Petteri Uusimaa, and Markus
Pessa, Strain-compensated GaInNAs/GaAsP/GaAs/GaInP quantum well lasers grown by
gas-source molecular beam epitaxy, J. Crystal. Growth 227/228, 541(2001).
31) Chang Si Peng, Tomi Jouhti, Pekka Laukkanen, Emil-Mihai Pavelescu, Janne Konttinen,
Wei Li, and Markus Pessa, 1.32 m GaInNAs-GaAs Laser with a low threshold current
density, IEEE Photon. Technol. Lett. 14, 275(2002).
32) Bin Yang, Zhan-guo Wang, Yong-hai Cheng, Ji-ben Liang, Lan-ying Lin, Zhan-ping
Zhu, Bo Xu, and Wei Li, Influence of DX centers in the AlxGa1-xAs barrier on the low-
temperature density and mobility of the two-dimensional electron gas in GaAs/AlGaAs
modulation-doped heterostructure, Appl. Phys. Lett. 66, 1406(1995).
33) Bin Yang, Yong-hai Cheng, Zhan-guo Wang, Ji-ben Liang, Qi-wei Liao, Lan-ying Lin,
Zhan-ping Zhu, Bo Xu, and Wei Li, Interface roughness scattering in GaAs-AlGaAs
modulation-doped heterostructures, Appl. Phys. Lett. 65, 3329(1994).
34) T. Ahlgren, E. Vainonen-Ahlgren, J. Likonen, Wei Li, and M. Pessa, Concentration of
interstitial and substitutional nitrogen in GaNxAs1–x, Appl. Phys. Lett. 80, 2314(2002).
35) E.-M. Pavelescu, C. S. Peng, T. Jouhti, J. Konttinen, Wei Li, M. Pessa, M. Dumitrescu,
and S. Spânulescu, Effects of insertion of strain-mediating layers on luminescence
properties of 1.3-µm GaInNAs/GaNAs/GaAs quantum-well structures, Appl. Phys. Lett.
80, 3054(2002).
36) B. Monemar, J. P. Bergman, I. A. Buyanova, Wei Li, H. Amano, and I. Akasaki, MRS
Internet J. Nitride Semicond. Res. 1, 2(1996).
37) M. Pessa, C.S. Peng, T. Jouhti, E.-M. Pavelescu, Wei Li, S. Karirinne, H.F. Liu, O.G.
Okhotnikov, Long-wavelength Nitride Lasers on GaAs, Microelectronics Engineering 69,
195(2003).
38) C. S. Peng, Wei Li, T. Jouhti, E.-M. Pavelescu, M. Pessa, A study and control of lattice
sites of N and In/Ga interdiffusion in dilute nitride quantum wells, J. of Cryst. Growth
251, 378(2003). E-MRS 2002 Spring Meeting, Strasbourg, France, June 18-21, 2002.
39) T. Jouhti, C.S. Peng, E.-M. Pavelescu, Wei Li, V.-T. Rangel Kuoppa, J. Konttinen, P.
Laukkanen, M. Pessa, Group III-Arsenide-Nitride Quantum Well Structures on GaAs for
Laser Diodes Emitting at 1.3 μm, SPIE 4651, p32.
40) E. -M. Pavelescu, C. S. Peng, T. Jouhti, J. Konttinen, M. Dumitrescu, Wei Li and M.
Pessa, Enhanced optical and structural properties of strain-compensated 1.3-m
GaInNAs/GaNAs/GaAs quantum-well structures by insertion of strain-mediating layers,
Solid-State Electronics, 47, 507(2003).
41) J. Dekker, J. Oila, K. Saarinen, A. Tukiainen, Wei Li, M. Pessa, Cation and anion
vacancies in proton irradiated GaInP, J. of Appl. Phys. 92, 5942(2002).
42) E.-M. Pavelescu, T. Jouhti, C.S. Peng, Wei Li, J. Konttinen, M. Dumitrescu, P.
Laukkanen, M. Pessa, Enhanced optical performances of strain-compensated 1.3 um
GaInNAs/GaNAs/GaAs quantum-well structures, J. of Cryst. Growth 241, 31(2002).

4. Wei Li
B. International conference proceedings:
1) Wei Li, Jari Likonen, Jouko Haapamaa, Markus Pessa, Be redistribution in GaInP and
growth of GaInP/AlInP tunnel diode by gas source molecular beam epitaxy, 7th
international Conference on Chemical Beam Epitaxy and Related Growth Techniques,
Tsukuba, Japan, 1994.
2) Wei Li, J.Lammasniemi, A. B. Kazantsev, R. Jaakkola, T. Mäkeläand M. Pessa, MBE
grown GaInP/AlInP tunnel junctions for GaInP/GaAs tandem solar cells, 2nd World
Conference and Exhibition on Photovoltaic Solar Energy Conversion, 1998, Vienna,
Austria, p3614.
3) Wei Li, Zhanguo Wang, Jiben Liang, Bo Xu, Zhanping Zhu, Optical studies of single
submonolayer InAs/GaAs structures grown GaAs (001) substrates, 1995 Electronic
Material Conference, U.S.A.
4) Wei Li, Zhanguo Wang, Jiben Liang, Bo Xu, Zhanping Zhu, Investigation of MBE
growth of highly strained InGaAs on GaAs, 1994 MSSS, Japan.
5) Wei Li, Zhanguo Wang, Jiben Liang, Bo Xu, Zhanping Zhu, 2D-3D growth mode
transition in InGaAs/GaAs (001), 1994 Electronic Material Conference, U.S.A.
6) Wei Li, Zhanguo Wang, Jiben Liang, Bo Xu, Zhanping Zhu, MBE growth kinetics
process of InGaAs on GaAs (001), 1994 MRS Fall Meeting, U.S.A.
7) Wei Li, Zhanguo Wang, Jiben Liang, Bo Xu, Zhanping Zhu, Optical studies of single
submonolayer and fractional layer InAs/GaAs superlattice structures grown in GaAs
matrix, 1995 MRS Spring Meeting, U.S. A.
8) Wei Li, Zhanguo Wang, Jiben Liang, Bo Xu, Zhanping Zhu, Photoluminescence studies
of fractional-layer InAs/GaAs superlattice structures grown in GaAs matrix, 1995 LDSD,
Singapore.
9) Wei Li, Peder Bergman, Bo Monemar, H. Amano, I. Akasaki, Time-resolve
photoluminescence studies of InGaN/GaN/AlGaN SQW, 1996 MRS Fall Meeting,
U.S.A.
10) Wei Li, Peder Bergman, I. Ivannov, Wei-Xin Ni, H. Amano, I. Akasaki, High resolution
X-ray diffraction and optical characterization of InGaN/GaN superlattices grown on
sapphire substrates with GaN layers, 1996 MRS Fall Meeting, U.S.A.
11) Wei Li, J. Turpeinen, P. Melanen, P. Savolainen, P. Uusimaa, M. Pessa: Growth of stain-
compensated GaInNAs/GaAsP Quantum Wells for 1.3 um Lasers. The fourth European
GaN Workshop, Nottingham, UK 2-5 July 2000.
12) Wei Li, Jani Turpeinen, Petri Melanen, Pekka Savolainen, Petteri Uusimaa, and Markus
Pessa, Strain-compensated GaInNAs/GaAsP QWs for 1.3 um lasers, 11th international
MBE conference, Beijing, China, September 11-15, 2000.
13) Wei Li, S. Laaksonen, J. Haapamaa, M. Pessa, Study of antiphase domain-free growth of
GaAs directly on offcut (001) Ge by gas-source molecular beam epitaxy, 11th
international MBE conference, Beijing, China, September 11-15, 2000.
14) Wei Li, Jani Turpeinen, V. Kuoppa, and Markus Pessa, Study of Nitrogen incorporation
in Ga(In)NAs materials grown by gas-source molecular beam epitaxy, 11th Euro MBE
workshop, Hinterzarten, Germany, February 4-7, 2001.

5. Wei Li
15) Wei Li and Markus Pessa, Growth of GaInNAs/GaAs by plasma-assisted molecular beam
epitaxy, European MRS conference, France, June5-8, 2001.
16) Wei Li, Jani Turpeinen, Petri Melanen, Pekka Savolainen, Petteri Uusimaa, and Markus
Pessa, Investigation of GaInNAs/GaAs QWs for 1.3 mm lasers, Polish-Finnish workshop
on Nitrides, Helsinki, Finland, 2000.
17) Wei Li, Markus Pessa, Jari. Likonen, Juha Toivonen and Harri Lipsanen, N incorporation
in GaInNAs materials grown by MBE, 10th International conference on Modulated
Semiconductor Structures, Linz, Austria, 23-27July, 2001.
18) Wei Li, Markus Pessa, Origin of improved luminescence efficiency after annealing of
Ga(In)NAs materials grown by molecular beam epitaxy, 43rd Electronic Material
Conference, Notre Dame, U.S.A., 27-29 June, 2001.
19) Wei Li, Markus Pessa, Origin of improved luminescence efficiency after annealing of
Ga(In)NAs materials grown by molecular beam epitaxy, European workshop on GaAs-
based lasers at 1300 nm, Lecce, Italy, 16-19 Sep. 2001.
20) Wei Li, T. Jouhti, P. Laukkanen, C. S. Peng, J. Konttinen, E. Pavelescu, M. Pessa, High
Performance 1.32 um GaInNAs/GaAs SQW Lasers Grown by Molecular Beam Epitaxy,
European Semiconductor Laser Workshop, Gent, Belgium, 28-29 Sep. 2001.
21) Wei Li, Markus Pessa, Origin of improved luminescence efficiency after annealing of
Ga(In)NAs materials grown by molecular beam epitaxy, 2002 Photonics West, San Jose
California.
22) Wei Li, Chang Si Peng, Tomi Jouhti, Janne Konttinen, Emil-Mihai Pavelescu, Mikko
Suominen, Mihail Dumitrescu, and Markus Pessa, High Performance 1.32 um
GaInNAs/GaAs SQW Lasers Grown by Molecular Beam Epitaxy, SPIE 4651, pp. 101-
106,2002 Photonics West, San Jose California.
23) W. M. Chen, N.Q. Thinh, I. A. Buyanova, P.N. Hai , H. P. Xin, C. W. Tu, Wei Li , M.
Pessa, Nature and Formation of Non-Radiative Defects in GaNAs And InGaAsN, 2001
MRS fall meeting.
24) Tomi Jouhti, Pekka Laukkanen, Chang Si Peng, Janne Konttinen, Wei Li and Markus
Pessa, Group III-arsenide-nitride quantum well structures on GaAs for laser diodes
emitting at 1.3μm, 2002 Photonics West, San Jose California.
25) Tomi Jouhti, Pekka Laukkanen, Chang Si Peng, Janne Konttinen, E. Pavelescu, Wei Li,
Markus Pessa, GaInNAs quantum well structures and lasers on GaAs grown by solid
source MBE, European workshop on GaAs-based lasers at 1300 nm, Lecce, Italy, 16-19
Sep. 2001.
26) Wei Li, Janne Konttinen, Chang Si Peng, Tomi Jouhti, Emil-Mihai Pavelescu, Mikko
Suominen, Mihail Dumitrescu, and Markus Pessa, High Performance 1.32 μm
GaInNAs/GaAs SQW Lasers Grown by Molecular Beam Epitaxy, 14th Indium
Phosphide and related Materials Conference, May 12-16, 2002, Stockholm, Sweden.
27) Wei Li, Tomi Jouhti, Chang Si Peng, Janne Konttinen, Emil-Mihai Pavelescu, Mikko
Suominen, Mihail Dumitrescu, and Markus Pessa, Invited presentation in 8th
International Conference on Electronic Materials (ICEM 2002).
28) S. Karirinne, Wei Li, J. Konttinen, J. Jouhti, M. Pessa, Growth of InAsN quantum dots on
GaAs by molecular beam epitaxy, 12th Euro-MBE Workshop, Feb. 16-19, 2003, Bad
Hofgastein, Austria.
29) M. Pessa, C.S. Peng, T. Jouhti, E.-M. Pavelescu, Wei Li, S. Karirinne, H.F. Liu, O. G.
Okhotnikov, Towards high-performance nitride lasers at 1.3 m and beyond, IEE Proc.

6. Wei Li
Optoelectronics 150 (1), pp. 12-21 (2003). International Workshop on Physics and
Technology of Dilute Nitrides for Optical Communications, Istanbul, Turkey, 8-12 Sept.,
2002.
30) E.-M. Pavelescu, T. Jouhti, M. Dumitrescu, C.S. Peng, Wei Li, J. Konttinen, V. Cimpoca,
M. Pessa, Photoluminescence study of strain-compensated GaInNAs/GaNAs/GaAs
quantum-well structures grown by molecular-beam epitaxy, CAS 2002, Int.
Semiconductor Conf., Sinaia, Romania, 8-12 Oct., 2002. Conf. proc., pp. 177-180 (2002).
31) C.S. Peng, Wei Li, T. Jouhti, E.-M. Pavelescu, M. Pessa, A study and control of lattice
sites of N and In/Ga interdiffusion in dilute nitride quantum wells, E-MRS 2002 Spring
Meeting, Strasbourg, France, June 18-21, 2002.
32) E.-M. Pavelescu, T. Jouhti, C.S. Peng, M. Dumitrescu, Wei Li, J. Konttinen, M. Pessa,
Influence of low-temperature growth on photoluminescence of 1.3-um
GaInNAs/GaNAs/GaAs quantum wells, International Workshop on the Physics and
Technology of Dilute Nitrides for Optical Communications, Istanbul, Turkey, 8-12 Sept.
2002.
33) C. S. Peng, T. Jouhti, J. Konttinen, Wei Li, M. Pessa, 1.3 m InGaAsN/GaAs Edge
Emitting and Vertical Cavity Surface Emitting Lasers grown by molecular beam epitaxy,
MBE XII Conf., San Fransisco, USA, September 15-20,2002. Conf. proc. pp. 63-64
(2002).
34) M. Dumitrescu, Wei Li, A. Rydefalk, R. Rönkkö, M. Peltola, M. Pessa, Extended
broadband superluminescent diodes, CLEO/IQEC, San Francisco, USA, May 16-21,
2004.
35) Wei Li, R. Rönkkö, M. Peltola, A. Rydefalk, M. Pessa, H.Schöll, S.Garidel.
K.A.Williams, P.Moreno, H.Lamela, M.Cavallari, Characterization of 1550 nm Fabry-
Perot Laser Structures for Application as Mode-Locked Pulse Sources, Photonics Europe
2004, Strasbourg, France, 26-30 April, 2004.
36) E.-M. Pavelescu, C.S. Peng, T. Jouhti, J. Konttinen, M. Dumitrescu, Wei Li, M. Pessa,
Enhanced optical and structural properties of strain-compensated 1.3-um GaInNAs/
GaNAs / GaAs quantum- well structures by insertion of strain-mediating layer, E-MRS
2002 Spring Meeting, Strasbourg, France, June 18-21, 2002.
37) M. Pessa, M. Dumitrescu, M. Guina, J. Haapamaa, P. Leinonen, Wei Li, P. Melanen, S.
Orsila, M. Saarinen, P. Savolainen, P. Sipilä, M. Toivonen, V. Vilokkinen, State-of-the-
art semiconductor light emitters and high-efficient solar cells prepared by the MBE
method, Northern Optics 2000, Uppsala, p. 32, Sweden, 6-8 June, 2000.
38) S. Laaksonen, J. Keränen, Wei Li, J. Haapamaa, P. Leinonen, M. Pessa, T. Lepistö, Gas-
Source Molecular Beam Epitaxy of GaAs on Ge for Solar Cell Applications, 16th
European Photovoltaic Solar Energy and Exhibiton, Glasgow, U.K., 1-5 May, 2000.
39) Wei Li, R. Rönkkö, M. Peltola, A. Rydefalk, M. Pessa, H. Schöll, S. Garidel.
K.A.Williams, P. Moreno, H. Lamela, M. Cavallari, Characterization of 1550 nm Fabry-
Perot Laser Structures for Application as Mode-Locked Pulse Sources, Photonics Europe,
Strasbourg, France, 26-30 April, 2004.
40) Wei Li, R. Rönkkö, A. Rydefalk, P. Pöyhönen, M. Pessa, High Performance 1550 nm
Superluminescent Diodes Based on Quantum Wells and Quantum Dots Structures,
Photonics West, 2005, USA.

7. Wei Li
Other Publications:
1) Wei Li, M. Pessa, Invited Chapter “Dilute Nitride Semiconductors for Optoelectronic
Devices” of the book “Handbook of Semiconductor Nanostructures and Devices,
published in 2005 by American Scientific Publishers.
2) Wei Li, M. Pessa, T. Jouhti, C.S. Peng, E.-M. Pavelescu, Invited Chapter "GaInNAs
quantum well laser" in Encyclopedia of Nanoscience and Nanotechnology, published in
January 2004 by American Scientific Publishers.
3) Wei Li, J. Konttinen, T. Jouhti, C.S. Peng, E.-M. Pavelescu, M. Suominen, M. Pessa,
Extending the emission wavelength of GaInNAs/GaAs quantum well lasers beyond 1300
nm in the book “Advanced Nanomaterials and Nanodevices” published by the Institute of
Physics Publishing. IOP Publishing Ltd, 2003. ISBN no. 0750309652, pp. 251-
260(2003).
4) Wei Li, J. Konttinen, T. Jouhti, C.S. Peng, E.-M. Pavelescu, M. Suominen, M. Pessa ,
Invited presentation in 8th International Conference on Electronic Materials
ICEM2002).
5) Wei Li, T. Jouhti, C.S. Peng, J. Konttinen, E.-M. Pavelescu, M. Suominen, M. Pessa,
Invited talk in "Narrow Bandgap Optoelectronic Materials and Devices Symposium",
202nd meeting of the Electrochemical Society in Salt Lake, USA.