151 south africa cap bank-protection-baker-duly-2008wmelis
This document provides an introduction to reactive power compensation using shunt capacitor banks and discusses their application. It explains that electrical systems are inherently inductive and require capacitive reactive power to improve transmission capacity and reduce losses. Shunt capacitor banks provide this capacitive reactive power and are used to correct the power factor towards unity. The document discusses factors to consider when determining the optimal location for a shunt capacitor bank installation, such as maintaining voltage profiles and reducing losses along feeder circuits. Location options include at the supply point to improve the overall power factor or distributed at load points to offset inductance directly.
This document summarizes TakeCharge, an ESD protection solution from SOFICS. TakeCharge has been implemented in over 500 ICs across 8 process generations. It provides complementary ESD solutions to augment existing portfolios, focusing on custom requirements like high-speed applications. SOFICS offers TakeCharge design kits containing proven ESD clamps, as well as ESD testing, analysis, and consulting services. The document highlights SOFICS' experience with advanced CMOS applications and how TakeCharge provides flexible, tunable ESD protection.
Short Circuit Instabilities in Silicon IGBTs and SiC Power MOSFETsPaula Diaz Reigosa
One of the most typical stresses that the device must withstand
is related to short-circuit events, which occur randomly during the component’s life.
Silicon-based IGBTs are good candidates for limiting the external current in case of a
short-circuit event, however their robustness is frequently limited due to instabilities.
In this Ph.D. thesis, the short-circuit performance of silicon-based IGBTs has been extensively
evaluated, but since Wide-Band Gap (WBG) devices, such as SiC MOSFETs,
are rapidly growing as a potential substitute of silicon-based technologies, its robustness
with respect to short circuit is also addressed.
1) Diamond chips or carbon chips are electronic chips manufactured using carbon or diamond as the substrate material instead of silicon. Carbon nanotubes are a major component used in carbon chips.
2) Carbon has advantages over silicon such as higher thermal conductivity, ability to withstand higher voltages and temperatures. However, carbon chips are still more expensive than silicon chips and electricity does not flow as smoothly through diamond as silicon.
3) Research is ongoing to address these issues and fully utilize the properties of carbon nanotubes and diamond film for applications like power electronics where their properties would provide benefits over silicon. Carbon chips are not expected to completely replace silicon for at least 20 more years.
This newsletter summarizes the research activities of several semiconductor companies in March 2010. It describes projects on growing InAlN/GaN heterostructures on different substrates for HEMT device applications from Alcatel-Thales III-V Lab and Soitec/Picogiga. It also summarizes research from Applied Materials on the band gap and offsets of HfxSi1−xO2 films, Fujitsu on photodetection using InAs/AlAs/AlGaAs quantum dots, and several other companies' work on materials growth, device fabrication and testing. The newsletter provides brief insights into recent research across the semiconductor industry.
151 south africa cap bank-protection-baker-duly-2008wmelis
This document provides an introduction to reactive power compensation using shunt capacitor banks and discusses their application. It explains that electrical systems are inherently inductive and require capacitive reactive power to improve transmission capacity and reduce losses. Shunt capacitor banks provide this capacitive reactive power and are used to correct the power factor towards unity. The document discusses factors to consider when determining the optimal location for a shunt capacitor bank installation, such as maintaining voltage profiles and reducing losses along feeder circuits. Location options include at the supply point to improve the overall power factor or distributed at load points to offset inductance directly.
This document summarizes TakeCharge, an ESD protection solution from SOFICS. TakeCharge has been implemented in over 500 ICs across 8 process generations. It provides complementary ESD solutions to augment existing portfolios, focusing on custom requirements like high-speed applications. SOFICS offers TakeCharge design kits containing proven ESD clamps, as well as ESD testing, analysis, and consulting services. The document highlights SOFICS' experience with advanced CMOS applications and how TakeCharge provides flexible, tunable ESD protection.
Short Circuit Instabilities in Silicon IGBTs and SiC Power MOSFETsPaula Diaz Reigosa
One of the most typical stresses that the device must withstand
is related to short-circuit events, which occur randomly during the component’s life.
Silicon-based IGBTs are good candidates for limiting the external current in case of a
short-circuit event, however their robustness is frequently limited due to instabilities.
In this Ph.D. thesis, the short-circuit performance of silicon-based IGBTs has been extensively
evaluated, but since Wide-Band Gap (WBG) devices, such as SiC MOSFETs,
are rapidly growing as a potential substitute of silicon-based technologies, its robustness
with respect to short circuit is also addressed.
1) Diamond chips or carbon chips are electronic chips manufactured using carbon or diamond as the substrate material instead of silicon. Carbon nanotubes are a major component used in carbon chips.
2) Carbon has advantages over silicon such as higher thermal conductivity, ability to withstand higher voltages and temperatures. However, carbon chips are still more expensive than silicon chips and electricity does not flow as smoothly through diamond as silicon.
3) Research is ongoing to address these issues and fully utilize the properties of carbon nanotubes and diamond film for applications like power electronics where their properties would provide benefits over silicon. Carbon chips are not expected to completely replace silicon for at least 20 more years.
This newsletter summarizes the research activities of several semiconductor companies in March 2010. It describes projects on growing InAlN/GaN heterostructures on different substrates for HEMT device applications from Alcatel-Thales III-V Lab and Soitec/Picogiga. It also summarizes research from Applied Materials on the band gap and offsets of HfxSi1−xO2 films, Fujitsu on photodetection using InAs/AlAs/AlGaAs quantum dots, and several other companies' work on materials growth, device fabrication and testing. The newsletter provides brief insights into recent research across the semiconductor industry.
This document is the preface to the second edition of the book "Microstrip and Printed Antenna Design" by Randy Bancroft. It provides an overview of the additions and improvements made for the second edition, including new analysis methods for circular polarization bandwidth, expanded sections on omnidirectional and PIFA antennas, and the addition of impedance matching techniques. The preface expresses the goal of the book as providing practical and manufacturable antenna designs while also offering references for more complex designs. It is intended as a handbook for microstrip antenna designers.
Original IC Mosfet Driver IXDN602SIATR IXDN602SIA 602 SOP-8 New IXYS CorporationAUTHELECTRONIC
Original IC Mosfet Driver IXDN602SIATR IXDN602SIA 602 SOP-8 New IXYS Corporation
https://authelectronic.com/original-ic-mosfet-driver-ixdn602siatr-ixdn602sia-602-sop-8-new-ixys-corporation
This document provides an overview of fatigue properties of beta processed and beta heat-treated titanium alloys, with an emphasis on beta annealed Ti-6Al-4V Extra Low Interstitial thick plate. It reviews literature on fatigue initiation sites and mechanisms, initiation lives, and short and long fatigue crack growth behavior. Testing and analysis was conducted to generate fatigue data required for damage tolerance assessments and reassessments of aircraft structures made from this alloy.
Low Level RF : Digital IQ loop for accelerating cavitiesGeorge Gautier
1) The document describes a digital I/Q loop used for accelerating cavities. It uses frequency down conversion, baseband modulation, and an FPGA for correction.
2) Key components include an I/Q modulator for 362.202MHz single sideband generation, down conversion to 10MHz, and a Hittite modulator for 352.202MHz baseband modulation.
3) Software used includes MATLAB, Simulink, and Xilinx for the FPGA design. Signal theory concepts like complex baseband representation are discussed for the bandpass to complex baseband conversion.
This document presents a project book on designing DCMPL logic circuits in a 28nm process technology. It was authored by Itamar Greenberg and Shay Rubinstein from the Department of Electrical Engineering at Bar Ilan University. The document includes an introduction to CMOS scaling challenges, a literature survey of logic families such as diode logic, RTL, TTL, NMOS, PMOS and CMOS. It describes the design, modeling, layout and simulation of various digital logic gates including NOR3, NOR4, OR3 and OR4 gates. Simulation results on propagation delay, energy consumption, voltage transfer curves and noise margins are presented and analyzed.
This document provides information about the Academic Press Series in Engineering, including:
- The series will include handbooks, textbooks, and professional reference books on cutting-edge engineering topics.
- It will also include single-authored books on state-of-the-art techniques and methods.
- The objective is to meet the needs of academic, industrial, and government engineers, as well as to provide instructional material for undergraduate and graduate teaching.
- The series editor is J. David Irwin, a well-known engineering educator who has been chairman of the electrical engineering department at Auburn University for 27 years.
This basic piezo sensor can be used in anti-theft devices, electronic locks, mechanical equipment vibration detection, sound gesture application and detection range bull's-eye counts vibration sensor occasions. These vibration levels could be given to any controller/processor and necessary decisions could be taken through it. Module triple output mode, digital output simple, analog output more accurate, serial output with exact readings.
This document describes a project to design a real time clock using a microcontroller. It includes:
- Interfacing an RTC chip and LCD with an 8051 microcontroller to display the current time and date.
- Interfacing a temperature sensor with the microcontroller using an ADC to measure temperature.
- Details about the 8051 microcontroller, RTC chip, LCD, temperature sensor, and ADC used.
- Block diagram of the system and description of how the components are interconnected.
Display backplanes fabricated with silicon TFTs are the industry standard for displays of all kinds. However, in the past decade various attempts have been made to move beyond silicon either on cost or performance grounds. A decade ago, the big promise seemed to come from organic transistors, but their promise has faded as their electron mobilities have proven to be woefully inadequate.
This report analyzes the market for the next wave of non-silicon TFTs to be pitched towards backplane and other applications. This wave uses metallic oxides and TFTs made from these materials promise electron mobilities of more or less the same level as amorphous silicon, but with lower costs. Interest in these materials is at a high point with some of the biggest names in displays – Sony, Sharp, Samsung, LG and Toshiba – making serious efforts to commercialize TFTs.
This report also examines the potential of these developments for new business revenues for materials firms that produce complex metallic oxide semiconductors. Until very recently, the addressable markets for such materials have been entirely in the R&D space. This report examines the key markets for oxide TFTs in the LCD, OLED and e-paper space. In addition, it also takes look at their role in other more speculative markets such as flexible displays, transparent electronics, sensors, RFID and even power electronics.
This report also presents an analysis and roadmap for the development of oxide OTFT technology both in terms of materials and manufacturing technology. In terms of the former, it takes a look at the difference that the arrival of p-type oxide semiconductors may have on the commercialization of oxide TFT technology. In addition, this report analyzes the market strategies for companies developing this technology and also includes an eight-year forecast made by application and material type.
Phân phối thiết bị Cameras giám sát, Mạng Công nghệ Thông tin và viễn thông, thiết bị phần cứng, phần mềm, thiết bị văn phòng, tự động hoá và thiết bị điện nhẹ (M&E) cho các toà nhà thương mại, trung tâm dữ liệu, building và data center.
– Hiện tại N-TEK Distribution đang phân phối hơn 150 sản phẩm và giải pháp của các hãng nổi tiếng thế giới:
Multimedia Connect, solutions for convergence
Multimedia Connect offers innovative Structured Cabling Solutions, which facilitate integration of all IP, based applications in Buildings and industries.
CCTV, wifi points, access control, remote display, DECT systems, Industrial Ethernet... a growing number of applications are using Internet Protocol ( IP) and need to be connected to traditional data cabling networks.
These new devices though have technical constraints, which differ from those of desktop computers, and it is therefore important to invent specific connexion solutions.
Multimedia connect strategy is to develop simple, performing and secured solutions which facilitate the connexion of IP devices to Cabling Systems in Intelligent Buildings.
This document provides a summary of a monograph dedicated to the design of practical coherent, non-coherent and cooperative MIMO-OFDM turbo-transceivers. It introduces MIMO-OFDM and discusses its benefits and applications in standards like LTE, WiFi and WiMAX. It also describes channel estimation and signal detection techniques for MIMO-OFDM systems. The monograph aims to address performance degradation issues that occur under realistic conditions and presents novel iterative signal processing methods for MIMO-OFDM systems.
The document describes a portable EEG recording device that uses a lock-in amplifier. It consists of an analog front-end circuit to amplify and filter EEG signals from electrodes and a myRIO device that implements the lock-in algorithm digitally. Testing showed the system could extract signals within 0.75 Hz of the target frequency from noisy environments. Further calibration is needed but preliminary results are positive.
The document is a user guide for the Navigator 600 Silica multi-stream measurement analyzer. It measures silica levels in steam water cycles in power plants and can sample up to six streams sequentially. The guide covers installation, configuration, calibration, maintenance and troubleshooting of the analyzer. It also includes specifications, safety information and appendices with additional details.
This white paper discusses 7 key factors to consider when designing Wi-Fi networks:
1. Access point placement to ensure proper coverage and avoid interference.
2. Controlling access point coverage to prevent issues like mismatched power between access points and clients, co-channel overlap, and hidden nodes.
3. Understanding the dominant use case which will impact network requirements.
4. Accounting for the needs of different vertical markets like education, manufacturing, retail, etc.
5. Managing interference from other wireless devices, metal objects, and access point channel selection.
6. Implementing radio frequency band steering to optimize use of 2.4GHz and 5GHz bands.
7. Performing capacity planning to
Catalog: mccb elcb mitsubishi electric
Beeteco.com là trang mua sắm trực tuyến thiết bị điện - Tự động hóa uy tín tại Việt Nam.
Chuyên cung cấp các thiết bị: Đèn báo nút nhấn, Relay, Timer, Contactor, MCCB ELCB, Biến tần, Van, Thiết bị cảm biến, phụ kiện tủ điện, .... Từ các thương hiệu hàng đầu trên thế giới.
www.beeteco.com @ Công ty TNHH TM KT ASTER
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www.facebook.com/beeteco
Tel: 0650 3617 012
DĐ: 0904 676 925
COTS aplicaciones y monitorización de la producción en los pozosMarketing Donalba
Conoce qué aplicaciones existen actualmente para la extracción de pozos, así como herramientas de monitorización del trabajo en los mismos. Todo ello de la mano de nuestra empresa representada Crystal Group.
This document discusses integrated circuit technology. It begins with an overview of the IC market breakdown by sector. It then discusses advantages of ICs such as smaller size, higher speed, lower power consumption compared to discrete components. The document provides a history of important IC inventions from 1904 to the present. It also discusses transistor scaling that has allowed achieving more complex ICs through reduced dimensions over time. Finally, it covers different IC design styles such as full custom, standard cell, gate array, and FPGA and their tradeoffs in terms of performance, cost, area, and time-to-market.
This document provides information about integrated circuit (IC) technology. It discusses the advantages of ICs over discrete components such as smaller size, higher speed, and lower power consumption. It outlines the early developments in IC technology from 1949 onwards. The document also discusses transistor scaling and how Moore's Law has allowed the semiconductor industry to achieve more complex ICs. Different IC circuit technologies such as BJT, CMOS, BiCMOS, SOI, and GaAs are briefly described. The scaling challenges at smaller technology nodes such as increased variability and static power are also mentioned.
Industrial Electronic Circuits Laboratory Manual (Synthesis Lectures on Elect...Lucky Gods
⚡️Ready to ignite your passion for industrial electronics? Buckle up for a hands-on adventure with the Industrial Electronic Circuits Laboratory Manual (Synthesis Lectures on Electrical Engineering)!
Dive deep into the thrilling world of power electronics, where circuits hum with energy and components dance to the rhythm of voltage and current. ⚡ Discover the secrets of thyristors and triacs, build robust power supplies, and tame the wild beast of DC-DC converters.
No more dry theory here! This manual is your personal lab partner, guiding you through 20+ experiments overflowing with practical knowledge. ⚗️ Learn by doing, troubleshoot like a pro, and watch your confidence soar as you master real-world industrial circuits.
Ready to turn theory into tangible magic? Let's electrify your future, one circuit at a time! ✨
Khoa Học - Kỹ Thuật & Giải Trí: http://phongvan.org
Tài Liệu Khoa Học Kỹ Thuật: http://tailieukythuat.info
Thiết bị Điện Công Nghiệp - Điện Hạ Thế: http://dienhathe.vn
"Scaling RAG Applications to serve millions of users", Kevin GoedeckeFwdays
How we managed to grow and scale a RAG application from zero to thousands of users in 7 months. Lessons from technical challenges around managing high load for LLMs, RAGs and Vector databases.
This document is the preface to the second edition of the book "Microstrip and Printed Antenna Design" by Randy Bancroft. It provides an overview of the additions and improvements made for the second edition, including new analysis methods for circular polarization bandwidth, expanded sections on omnidirectional and PIFA antennas, and the addition of impedance matching techniques. The preface expresses the goal of the book as providing practical and manufacturable antenna designs while also offering references for more complex designs. It is intended as a handbook for microstrip antenna designers.
Original IC Mosfet Driver IXDN602SIATR IXDN602SIA 602 SOP-8 New IXYS CorporationAUTHELECTRONIC
Original IC Mosfet Driver IXDN602SIATR IXDN602SIA 602 SOP-8 New IXYS Corporation
https://authelectronic.com/original-ic-mosfet-driver-ixdn602siatr-ixdn602sia-602-sop-8-new-ixys-corporation
This document provides an overview of fatigue properties of beta processed and beta heat-treated titanium alloys, with an emphasis on beta annealed Ti-6Al-4V Extra Low Interstitial thick plate. It reviews literature on fatigue initiation sites and mechanisms, initiation lives, and short and long fatigue crack growth behavior. Testing and analysis was conducted to generate fatigue data required for damage tolerance assessments and reassessments of aircraft structures made from this alloy.
Low Level RF : Digital IQ loop for accelerating cavitiesGeorge Gautier
1) The document describes a digital I/Q loop used for accelerating cavities. It uses frequency down conversion, baseband modulation, and an FPGA for correction.
2) Key components include an I/Q modulator for 362.202MHz single sideband generation, down conversion to 10MHz, and a Hittite modulator for 352.202MHz baseband modulation.
3) Software used includes MATLAB, Simulink, and Xilinx for the FPGA design. Signal theory concepts like complex baseband representation are discussed for the bandpass to complex baseband conversion.
This document presents a project book on designing DCMPL logic circuits in a 28nm process technology. It was authored by Itamar Greenberg and Shay Rubinstein from the Department of Electrical Engineering at Bar Ilan University. The document includes an introduction to CMOS scaling challenges, a literature survey of logic families such as diode logic, RTL, TTL, NMOS, PMOS and CMOS. It describes the design, modeling, layout and simulation of various digital logic gates including NOR3, NOR4, OR3 and OR4 gates. Simulation results on propagation delay, energy consumption, voltage transfer curves and noise margins are presented and analyzed.
This document provides information about the Academic Press Series in Engineering, including:
- The series will include handbooks, textbooks, and professional reference books on cutting-edge engineering topics.
- It will also include single-authored books on state-of-the-art techniques and methods.
- The objective is to meet the needs of academic, industrial, and government engineers, as well as to provide instructional material for undergraduate and graduate teaching.
- The series editor is J. David Irwin, a well-known engineering educator who has been chairman of the electrical engineering department at Auburn University for 27 years.
This basic piezo sensor can be used in anti-theft devices, electronic locks, mechanical equipment vibration detection, sound gesture application and detection range bull's-eye counts vibration sensor occasions. These vibration levels could be given to any controller/processor and necessary decisions could be taken through it. Module triple output mode, digital output simple, analog output more accurate, serial output with exact readings.
This document describes a project to design a real time clock using a microcontroller. It includes:
- Interfacing an RTC chip and LCD with an 8051 microcontroller to display the current time and date.
- Interfacing a temperature sensor with the microcontroller using an ADC to measure temperature.
- Details about the 8051 microcontroller, RTC chip, LCD, temperature sensor, and ADC used.
- Block diagram of the system and description of how the components are interconnected.
Display backplanes fabricated with silicon TFTs are the industry standard for displays of all kinds. However, in the past decade various attempts have been made to move beyond silicon either on cost or performance grounds. A decade ago, the big promise seemed to come from organic transistors, but their promise has faded as their electron mobilities have proven to be woefully inadequate.
This report analyzes the market for the next wave of non-silicon TFTs to be pitched towards backplane and other applications. This wave uses metallic oxides and TFTs made from these materials promise electron mobilities of more or less the same level as amorphous silicon, but with lower costs. Interest in these materials is at a high point with some of the biggest names in displays – Sony, Sharp, Samsung, LG and Toshiba – making serious efforts to commercialize TFTs.
This report also examines the potential of these developments for new business revenues for materials firms that produce complex metallic oxide semiconductors. Until very recently, the addressable markets for such materials have been entirely in the R&D space. This report examines the key markets for oxide TFTs in the LCD, OLED and e-paper space. In addition, it also takes look at their role in other more speculative markets such as flexible displays, transparent electronics, sensors, RFID and even power electronics.
This report also presents an analysis and roadmap for the development of oxide OTFT technology both in terms of materials and manufacturing technology. In terms of the former, it takes a look at the difference that the arrival of p-type oxide semiconductors may have on the commercialization of oxide TFT technology. In addition, this report analyzes the market strategies for companies developing this technology and also includes an eight-year forecast made by application and material type.
Phân phối thiết bị Cameras giám sát, Mạng Công nghệ Thông tin và viễn thông, thiết bị phần cứng, phần mềm, thiết bị văn phòng, tự động hoá và thiết bị điện nhẹ (M&E) cho các toà nhà thương mại, trung tâm dữ liệu, building và data center.
– Hiện tại N-TEK Distribution đang phân phối hơn 150 sản phẩm và giải pháp của các hãng nổi tiếng thế giới:
Multimedia Connect, solutions for convergence
Multimedia Connect offers innovative Structured Cabling Solutions, which facilitate integration of all IP, based applications in Buildings and industries.
CCTV, wifi points, access control, remote display, DECT systems, Industrial Ethernet... a growing number of applications are using Internet Protocol ( IP) and need to be connected to traditional data cabling networks.
These new devices though have technical constraints, which differ from those of desktop computers, and it is therefore important to invent specific connexion solutions.
Multimedia connect strategy is to develop simple, performing and secured solutions which facilitate the connexion of IP devices to Cabling Systems in Intelligent Buildings.
This document provides a summary of a monograph dedicated to the design of practical coherent, non-coherent and cooperative MIMO-OFDM turbo-transceivers. It introduces MIMO-OFDM and discusses its benefits and applications in standards like LTE, WiFi and WiMAX. It also describes channel estimation and signal detection techniques for MIMO-OFDM systems. The monograph aims to address performance degradation issues that occur under realistic conditions and presents novel iterative signal processing methods for MIMO-OFDM systems.
The document describes a portable EEG recording device that uses a lock-in amplifier. It consists of an analog front-end circuit to amplify and filter EEG signals from electrodes and a myRIO device that implements the lock-in algorithm digitally. Testing showed the system could extract signals within 0.75 Hz of the target frequency from noisy environments. Further calibration is needed but preliminary results are positive.
The document is a user guide for the Navigator 600 Silica multi-stream measurement analyzer. It measures silica levels in steam water cycles in power plants and can sample up to six streams sequentially. The guide covers installation, configuration, calibration, maintenance and troubleshooting of the analyzer. It also includes specifications, safety information and appendices with additional details.
This white paper discusses 7 key factors to consider when designing Wi-Fi networks:
1. Access point placement to ensure proper coverage and avoid interference.
2. Controlling access point coverage to prevent issues like mismatched power between access points and clients, co-channel overlap, and hidden nodes.
3. Understanding the dominant use case which will impact network requirements.
4. Accounting for the needs of different vertical markets like education, manufacturing, retail, etc.
5. Managing interference from other wireless devices, metal objects, and access point channel selection.
6. Implementing radio frequency band steering to optimize use of 2.4GHz and 5GHz bands.
7. Performing capacity planning to
Catalog: mccb elcb mitsubishi electric
Beeteco.com là trang mua sắm trực tuyến thiết bị điện - Tự động hóa uy tín tại Việt Nam.
Chuyên cung cấp các thiết bị: Đèn báo nút nhấn, Relay, Timer, Contactor, MCCB ELCB, Biến tần, Van, Thiết bị cảm biến, phụ kiện tủ điện, .... Từ các thương hiệu hàng đầu trên thế giới.
www.beeteco.com @ Công ty TNHH TM KT ASTER
Số 7 Đại Lộ Độc Lập, KCN Sóng Thần 1, P. Dĩ An, Tx. Dĩ An, Bình Dương
www.facebook.com/beeteco
Tel: 0650 3617 012
DĐ: 0904 676 925
COTS aplicaciones y monitorización de la producción en los pozosMarketing Donalba
Conoce qué aplicaciones existen actualmente para la extracción de pozos, así como herramientas de monitorización del trabajo en los mismos. Todo ello de la mano de nuestra empresa representada Crystal Group.
This document discusses integrated circuit technology. It begins with an overview of the IC market breakdown by sector. It then discusses advantages of ICs such as smaller size, higher speed, lower power consumption compared to discrete components. The document provides a history of important IC inventions from 1904 to the present. It also discusses transistor scaling that has allowed achieving more complex ICs through reduced dimensions over time. Finally, it covers different IC design styles such as full custom, standard cell, gate array, and FPGA and their tradeoffs in terms of performance, cost, area, and time-to-market.
This document provides information about integrated circuit (IC) technology. It discusses the advantages of ICs over discrete components such as smaller size, higher speed, and lower power consumption. It outlines the early developments in IC technology from 1949 onwards. The document also discusses transistor scaling and how Moore's Law has allowed the semiconductor industry to achieve more complex ICs. Different IC circuit technologies such as BJT, CMOS, BiCMOS, SOI, and GaAs are briefly described. The scaling challenges at smaller technology nodes such as increased variability and static power are also mentioned.
Industrial Electronic Circuits Laboratory Manual (Synthesis Lectures on Elect...Lucky Gods
⚡️Ready to ignite your passion for industrial electronics? Buckle up for a hands-on adventure with the Industrial Electronic Circuits Laboratory Manual (Synthesis Lectures on Electrical Engineering)!
Dive deep into the thrilling world of power electronics, where circuits hum with energy and components dance to the rhythm of voltage and current. ⚡ Discover the secrets of thyristors and triacs, build robust power supplies, and tame the wild beast of DC-DC converters.
No more dry theory here! This manual is your personal lab partner, guiding you through 20+ experiments overflowing with practical knowledge. ⚗️ Learn by doing, troubleshoot like a pro, and watch your confidence soar as you master real-world industrial circuits.
Ready to turn theory into tangible magic? Let's electrify your future, one circuit at a time! ✨
Khoa Học - Kỹ Thuật & Giải Trí: http://phongvan.org
Tài Liệu Khoa Học Kỹ Thuật: http://tailieukythuat.info
Thiết bị Điện Công Nghiệp - Điện Hạ Thế: http://dienhathe.vn
Similar to Newsletter Research Activities of Semiconductor Companies November 2009 (20)
"Scaling RAG Applications to serve millions of users", Kevin GoedeckeFwdays
How we managed to grow and scale a RAG application from zero to thousands of users in 7 months. Lessons from technical challenges around managing high load for LLMs, RAGs and Vector databases.
Dandelion Hashtable: beyond billion requests per second on a commodity serverAntonios Katsarakis
This slide deck presents DLHT, a concurrent in-memory hashtable. Despite efforts to optimize hashtables, that go as far as sacrificing core functionality, state-of-the-art designs still incur multiple memory accesses per request and block request processing in three cases. First, most hashtables block while waiting for data to be retrieved from memory. Second, open-addressing designs, which represent the current state-of-the-art, either cannot free index slots on deletes or must block all requests to do so. Third, index resizes block every request until all objects are copied to the new index. Defying folklore wisdom, DLHT forgoes open-addressing and adopts a fully-featured and memory-aware closed-addressing design based on bounded cache-line-chaining. This design offers lock-free index operations and deletes that free slots instantly, (2) completes most requests with a single memory access, (3) utilizes software prefetching to hide memory latencies, and (4) employs a novel non-blocking and parallel resizing. In a commodity server and a memory-resident workload, DLHT surpasses 1.6B requests per second and provides 3.5x (12x) the throughput of the state-of-the-art closed-addressing (open-addressing) resizable hashtable on Gets (Deletes).
How information systems are built or acquired puts information, which is what they should be about, in a secondary place. Our language adapted accordingly, and we no longer talk about information systems but applications. Applications evolved in a way to break data into diverse fragments, tightly coupled with applications and expensive to integrate. The result is technical debt, which is re-paid by taking even bigger "loans", resulting in an ever-increasing technical debt. Software engineering and procurement practices work in sync with market forces to maintain this trend. This talk demonstrates how natural this situation is. The question is: can something be done to reverse the trend?
From Natural Language to Structured Solr Queries using LLMsSease
This talk draws on experimentation to enable AI applications with Solr. One important use case is to use AI for better accessibility and discoverability of the data: while User eXperience techniques, lexical search improvements, and data harmonization can take organizations to a good level of accessibility, a structural (or “cognitive” gap) remains between the data user needs and the data producer constraints.
That is where AI – and most importantly, Natural Language Processing and Large Language Model techniques – could make a difference. This natural language, conversational engine could facilitate access and usage of the data leveraging the semantics of any data source.
The objective of the presentation is to propose a technical approach and a way forward to achieve this goal.
The key concept is to enable users to express their search queries in natural language, which the LLM then enriches, interprets, and translates into structured queries based on the Solr index’s metadata.
This approach leverages the LLM’s ability to understand the nuances of natural language and the structure of documents within Apache Solr.
The LLM acts as an intermediary agent, offering a transparent experience to users automatically and potentially uncovering relevant documents that conventional search methods might overlook. The presentation will include the results of this experimental work, lessons learned, best practices, and the scope of future work that should improve the approach and make it production-ready.
"Frontline Battles with DDoS: Best practices and Lessons Learned", Igor IvaniukFwdays
At this talk we will discuss DDoS protection tools and best practices, discuss network architectures and what AWS has to offer. Also, we will look into one of the largest DDoS attacks on Ukrainian infrastructure that happened in February 2022. We'll see, what techniques helped to keep the web resources available for Ukrainians and how AWS improved DDoS protection for all customers based on Ukraine experience
What is an RPA CoE? Session 1 – CoE VisionDianaGray10
In the first session, we will review the organization's vision and how this has an impact on the COE Structure.
Topics covered:
• The role of a steering committee
• How do the organization’s priorities determine CoE Structure?
Speaker:
Chris Bolin, Senior Intelligent Automation Architect Anika Systems
ScyllaDB is making a major architecture shift. We’re moving from vNode replication to tablets – fragments of tables that are distributed independently, enabling dynamic data distribution and extreme elasticity. In this keynote, ScyllaDB co-founder and CTO Avi Kivity explains the reason for this shift, provides a look at the implementation and roadmap, and shares how this shift benefits ScyllaDB users.
"NATO Hackathon Winner: AI-Powered Drug Search", Taras KlobaFwdays
This is a session that details how PostgreSQL's features and Azure AI Services can be effectively used to significantly enhance the search functionality in any application.
In this session, we'll share insights on how we used PostgreSQL to facilitate precise searches across multiple fields in our mobile application. The techniques include using LIKE and ILIKE operators and integrating a trigram-based search to handle potential misspellings, thereby increasing the search accuracy.
We'll also discuss how the azure_ai extension on PostgreSQL databases in Azure and Azure AI Services were utilized to create vectors from user input, a feature beneficial when users wish to find specific items based on text prompts. While our application's case study involves a drug search, the techniques and principles shared in this session can be adapted to improve search functionality in a wide range of applications. Join us to learn how PostgreSQL and Azure AI can be harnessed to enhance your application's search capability.
This talk will cover ScyllaDB Architecture from the cluster-level view and zoom in on data distribution and internal node architecture. In the process, we will learn the secret sauce used to get ScyllaDB's high availability and superior performance. We will also touch on the upcoming changes to ScyllaDB architecture, moving to strongly consistent metadata and tablets.
Conversational agents, or chatbots, are increasingly used to access all sorts of services using natural language. While open-domain chatbots - like ChatGPT - can converse on any topic, task-oriented chatbots - the focus of this paper - are designed for specific tasks, like booking a flight, obtaining customer support, or setting an appointment. Like any other software, task-oriented chatbots need to be properly tested, usually by defining and executing test scenarios (i.e., sequences of user-chatbot interactions). However, there is currently a lack of methods to quantify the completeness and strength of such test scenarios, which can lead to low-quality tests, and hence to buggy chatbots.
To fill this gap, we propose adapting mutation testing (MuT) for task-oriented chatbots. To this end, we introduce a set of mutation operators that emulate faults in chatbot designs, an architecture that enables MuT on chatbots built using heterogeneous technologies, and a practical realisation as an Eclipse plugin. Moreover, we evaluate the applicability, effectiveness and efficiency of our approach on open-source chatbots, with promising results.
Getting the Most Out of ScyllaDB Monitoring: ShareChat's TipsScyllaDB
ScyllaDB monitoring provides a lot of useful information. But sometimes it’s not easy to find the root of the problem if something is wrong or even estimate the remaining capacity by the load on the cluster. This talk shares our team's practical tips on: 1) How to find the root of the problem by metrics if ScyllaDB is slow 2) How to interpret the load and plan capacity for the future 3) Compaction strategies and how to choose the right one 4) Important metrics which aren’t available in the default monitoring setup.
Northern Engraving | Nameplate Manufacturing Process - 2024Northern Engraving
Manufacturing custom quality metal nameplates and badges involves several standard operations. Processes include sheet prep, lithography, screening, coating, punch press and inspection. All decoration is completed in the flat sheet with adhesive and tooling operations following. The possibilities for creating unique durable nameplates are endless. How will you create your brand identity? We can help!
"$10 thousand per minute of downtime: architecture, queues, streaming and fin...Fwdays
Direct losses from downtime in 1 minute = $5-$10 thousand dollars. Reputation is priceless.
As part of the talk, we will consider the architectural strategies necessary for the development of highly loaded fintech solutions. We will focus on using queues and streaming to efficiently work and manage large amounts of data in real-time and to minimize latency.
We will focus special attention on the architectural patterns used in the design of the fintech system, microservices and event-driven architecture, which ensure scalability, fault tolerance, and consistency of the entire system.
GlobalLogic Java Community Webinar #18 “How to Improve Web Application Perfor...GlobalLogic Ukraine
Під час доповіді відповімо на питання, навіщо потрібно підвищувати продуктивність аплікації і які є найефективніші способи для цього. А також поговоримо про те, що таке кеш, які його види бувають та, основне — як знайти performance bottleneck?
Відео та деталі заходу: https://bit.ly/45tILxj
QR Secure: A Hybrid Approach Using Machine Learning and Security Validation F...AlexanderRichford
QR Secure: A Hybrid Approach Using Machine Learning and Security Validation Functions to Prevent Interaction with Malicious QR Codes.
Aim of the Study: The goal of this research was to develop a robust hybrid approach for identifying malicious and insecure URLs derived from QR codes, ensuring safe interactions.
This is achieved through:
Machine Learning Model: Predicts the likelihood of a URL being malicious.
Security Validation Functions: Ensures the derived URL has a valid certificate and proper URL format.
This innovative blend of technology aims to enhance cybersecurity measures and protect users from potential threats hidden within QR codes 🖥 🔒
This study was my first introduction to using ML which has shown me the immense potential of ML in creating more secure digital environments!
QR Secure: A Hybrid Approach Using Machine Learning and Security Validation F...
Newsletter Research Activities of Semiconductor Companies November 2009
1. KnowMade
Newsletter
Research Activities of
Semiconductor Companies
November 2009
2. Information
This monthly newsletter
brings to you an insight into
the research activities of
semiconductor private
CONTENTS
companies.
Cree............................................................................................................................................................... 3
Free subscription here High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing
atomic layer deposited Al2O3 gate dielectric ................................................................. 3
Custom newsletter
KnowMade can design a
custom newsletter according Design and technology considerations for SiC bipolar devices: BJTs, IGBTs, and
to your own needs: patents, GTOs........................................................................................................................................... 3
scientific activities, calls for
projects, events, etc. Fujitsu .......................................................................................................................................................... 3
GaAsSb-based backward diodes for highly sensitive millimetre -wave detectors . 3
contact@knowmade.fr
Freescale Semiconductor ..................................................................................................................... 4
Arsenic defect complexes at SiO/Si interfaces: A density funct ional theory study4
KNOWMADE
KnowMade is a competitive
Infineon Technologies ........................................................................................................................... 4
intelligence private company Comparison of 24 GHz receiver front-ends using active and passive mixers in
providing technology watch CMOS .......................................................................................................................................... 4
services for R&D projects in
innovative technological Kyma Technologies ................................................................................................................................ 4
sectors:
-semiconductor materials On carrier spillover in c- and m-plane InGaN light emitting diodes ......................... 4
-micro & nanotechnology
-biotechnology OSRAM Opto Semiconductors ............................................................................................................. 5
-pharmacology Leakage current and reverse-bias luminescence in InGaN-based light-emitting
-environment diodes ........................................................................................................................................ 5
etc.
Our mission is to provide you Sumitomo Electric Industries ............................................................................................................. 5
high added value informations Electrostatic-discharge-induced degradation of 1.3 µm AlGaInAs/InP buried
in order to improve your heterostructure laser diodes ............................................................................................... 5
innovation process. A PhD
team, specializing in your
technological field, identifies, Alcatel-Thales, III-V LaB........................................................................................................................ 5
collects and analyzes in the InP DHBT selector-driver with 2×2.7 V swing for 100 Gbit/s operation ................ 5
best sources (patents,
scientific publications, Taiwan Semiconductor Manufacturing Company ....................................................................... 6
legislation, web, etc) the most
Ge Epitaxial Growth on GaAs Substrates for Application to Ge -Source/Drain GaAs
relevant informations for your
projects. MOSFETs ................................................................................................................................... 6
KnowMade cover a wide Renesas Technology ............................................................................................................................... 6
range of technology watch Analysis of Snapback Phenomena in VDMOS Transistor having the High Second
services: newsletter, web- Breakdown Current: A High ESD Mechanism Analysis ................................................. 6
based collaborative platform,
technology analysis, state of
the art, patent classification, Rohm ............................................................................................................................................................ 6
scientific portfolio analysis, Development of SiC diodes, power MOSFETs and intelligent power modules ....... 6
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competitors and partners,
technology trends, etc.
www.knowmade.fr
Novembre 2009 | www.knowmade.fr
3. CREE
High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic
layer deposited Al2O3 gate dielectric
Abstract : Lateral metal-oxide-semiconductor field-effect transistors (MOSFETs) have been fabricated on 4H-SiC
utilizing deposited dielectrics and gate-last processing. The bilayer dielectric consists of thin nitrided SiO2 covered by
25 nm of Al2O3 deposited using atomic layer deposition. Field-effect mobility and threshold voltage (VT) vary with SiC
nitric oxide (NO) anneal temperature. Peak mobility of 106 cm2/V·s was obtained with corresponding VT of 0.8 V. The
peak mobility decreases to 61 cm2/V·s with a lower temperature NO anneal, while the VT increased to 1.4 V. Thus with
proper gate engineering, high-mobility normally off MOSFET devices can be obtained, leading to higher-performance
gate-controlled power devices.
Read more …
Source : Applied Physics Letters
Design and technology considerations for SiC bipolar devices: BJTs, IGBTs, and GTOs
Abstract : There has been a rapid improvement in SiC materials and power devices during the last few years. SiC
unipolar devices such as Schottky diodes, JFETs and MOSFETs have been developed extensively and advantages of
insertion of such devices in power electronic systems have been demonstrated [1, 2]. However, unipolar devices for
high voltage systems suffer from high drift layer resistance that gives rise to high power dissipation in the on-state. For
such applications, bipolar devices are preferred due to their low on-resistance. In this article, the physics and
technology of SiC bipolar devices, namely Bipolar Junction Transistors (BJTs), Insulated Gate Bipolar Transistors
(IGBTs), and Gate Turn Off Thyristors (GTOs), are discussed. A detailed review of the current status and future trends in
these devices is given with an emphasis on the device design and characterization.
Read more …
Source : Physica Status Solidi (a)
FUJITSU
GaAsSb-based backward diodes for highly sensitive millimetre -wave detectors
Abstract : Highly sensitive millimetre-wave detectors based on p-GaAs0.51Sb0.49/i-In0.52Al0.48As/n-InxGa1-xAs backward
diodes under zero-bias operation were developed on an InP substrate. Voltage sensitivity of 12300 V/W at 94 GHz was
achieved with the GaAsSb-based diode which has a circular mesa with a diameter of 0.9 µm. To improve the sensitivity,
the indium composition of the n-InxGa1-xAs layer and thickness of the i-In0.52Al0.48As layer were optimised. Furthermore,
a self-aligned process was performed to minimise parasitic resistance at an ohmic contact layer. These GaAsSb-based
diodes that are lattice-matched to InP are promising for easy integration with high-performance InP low-noise
amplifiers.
Read more …
Source : Electronics Letters
Novembre 2009 | www.knowmade.fr
4. FREESCALE SEMICONDUCTOR
Arsenic defect complexes at SiO/Si interfaces: A density functional theory study
Abstract : The behavior of arsenic defect complexes at amorphous SiO2/Si(110) interfaces has been studied using
density-functional theory calculation. We find that arsenic defect complexes that are stable in bulk Si show moderate
energy gain in SiO2/Si interface region due to the interface-induced strain effect. We have identified three arsenic defect
complex configurations, Asit, As2I2I, and As2I2II, which exist only at SiO2/Si interface. These interface arsenic defect
complexes are highly stabilized due to their unique bonding configurations at SiO2/Si interface. Therefore, they could
contribute to arsenic segregation as both initial stage precursor and dopant trapping sites. Our calculation indicates
that arsenic atoms trapped in such interface complexes are electrically inactive. Finally, the formation and evolution
dynamics of interface arsenic defect complexes are discussed.
Read more …
Source : Physical Review B
INFINEON TECHNOLOGIES
Comparison of 24 GHz receiver front-ends using active and passive mixers in CMOS
Abstract : This study compares the key parameters of two integrated receiver front-end architectures: low noise
amplifier (LNA) with active mixer against LNA with passive mixer. The authors discuss the differences in the
performance and their impact on system characteristics for radar applications. A low-IF down-conversion receiver
implementation is considered. The results are compared in measurement for two 24 GHz receiver front-end chips
realised in a 0.13 µm digital CMOS process. Both circuits have been characterised over automotive temperature range
−40 to 125°C. The front-end with an active mixer offers lower LO power dependence and exhibits better temperature
stability, whereas the front-end with a passive mixer has the advantage of better input-referred linearity and lower
flicker noise.
Read more …
Source : IET Circuits Devices & Systems
KYMA TECHNOLOGIES
On carrier spillover in c- and m-plane InGaN light emitting diodes
Abstract : The internal quantum efficiency (IQE) and relative external quantum efficiency (EQE) in InGaN light-emitting
diodes (LEDs) emitting at 400 nm with and without electron blocking layers (EBLs) on c-plane GaN and m-plane GaN
were investigated in order to shed some light on any effect of polarization charge induced field on efficiency killer
carrier spillover. Without an EBL the EQE values suffered considerably (by 80%) for both orientations, which is clearly
attributable to carrier spillover. Substantial carrier spillover in both polarities, therefore, suggests that the polarization
charge is not the major factor in efficiency degradation observed, particularly at high injection levels. Furthermore, the
m-plane variety with EBL did not show any discernable efficiency degradation up to a maximum current density of
2250 A cm−2 employed while that on c-plane showed a reduction by ~40%. In addition, IQE of m-plane LED structure
determined from excitation power dependent photoluminescence was ~80% compared to 50% in c-plane LEDs under
resonant and moderate excitation condition. This too is indicative of the superiority of m-plane LED structures, most
probably due to relatively larger optical matrix elements for m-plane orientation.
Read more …
Source : Applied Physics Letters
Novembre 2009 | www.knowmade.fr
5. OSRAM OPTO SEMICONDUCTORS
Leakage current and reverse-bias luminescence in InGaN-based light-emitting diodes
Abstract : This paper reports an electro-optical analysis of the correlation between reverse-bias leakage current and
luminescence in light-emitting diodes based on InGaN. The results of the analysis suggest that (i) the main mechanism
responsible for leakage current conduction is tunneling, (ii) leakage current is correlated with the presence of reverse-
bias luminescence, (iii) leakage current flows through preferential paths, that can be identified by means of emission
microscopy, and (iv) reverse-bias luminescence could be ascribed to the recombination of electron-hole pairs in the
quantum well region.
Read more …
Source : Applied Physics Letters
SUMITOMO ELECTRIC INDUSTRIES
Electrostatic-discharge-induced degradation of 1.3 µm AlGaInAs/InP buried
heterostructure laser diodes
Abstract : Degradation of 1.3 µm AlGaInAs buried heterostructure laser diodes due to electrostatic discharge (ESD) is
studied. The degradation mechanism of this material has not previously been clear and so the ESD tolerance was
evaluated. Degradation occurred at 0.5 and 2.5 kV for forward and reverse polarities, respectively. Because that ESD
tolerance for forward polarity is insufficient for practical applications, we focused on it in analyzing the degradation
mechanism. Elliptically shaped melted regions are observed in the active layer of the facet. Such regions developed
inside a cavity under the application of ESD pulses. These results indicate that degradation is caused by melting due to
optical absorption.
Read more …
Source : Journal of Applied Physics
ALCATEL-THALES, III-V LAB
InP DHBT selector-driver with 2×2.7 V swing for 100 Gbit/s operation
Abstract : An integrated selector-driver is designed for 100 Gbit/s operation and fabricated using 0.7 µm InP double-
heterojunction bipolar transistor (DHBT) technology. The driver has a lumped architecture and operates in differential
mode. Two complementary signals each with 2.7 V amplitude (3.2 Vpp) have been measured at 100 Gbit/s.
Read more …
Source : Electronics Letters
Novembre 2009 | www.knowmade.fr
6. TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
Ge Epitaxial Growth on GaAs Substrates for Application to Ge -Source/Drain GaAs MOSFETs
Abstract : Ge films were epitaxially grown on GaAs(100) substrates and Ga 0.88In0.12As(100) virtual substrates using an
ultrahigh vacuum/chemical vapor deposition system. The incubation time of Ge growth depends on Ga(In)As surfaces
that were processed by different wet chemical solutions. Growth behaviors, such as island growth at the initial stages
and selective growth into recessed regions of GaAs, were studied by transmission electron microscopy. To test the
quality of Ge grown on GaAs, an n+-Ge/p-GaAs diode was fabricated. We propose that through Ge selective epitaxial
growth, Ge can be used as the source–drain of a GaAs metal-oxide-semiconductor field-effect transistor (MOSFET) to
overcome some intrinsic limitations of this device.
Read more …
Source : Journal of Electrochemical Society
RENESAS TECHNOLOGY
Analysis of Snapback Phenomena in VDMOS Transistor having the High Second Breakdown
Current: A High ESD Mechanism Analysis
Abstract : We proposed the balanced vertical double - diffused MOS (B-VDMOS) transistor. The B-VDMOS transistor is
not destroyed by avalanche breakdown and acquires the high second breakdown current. Owing to the high second
breakdown current, the B-VDMOS transistor has high electrostatic discharge (ESD) robustness. This paper presents the
mechanism of the snapback phenomena and clarifies the cause that the B-VDMOS transistor has the high second
breakdown current. We find the cause that current does not become concentrated even after avalanche breakdown in
the B-VDMOS transistor.
Read more …
Source : IEEJ Transactions on Electrical and Electronic Engineering
ROHM
Development of SiC diodes, power MOSFETs and intelligent power modules
Abstract : Silicon carbide (SiC) power devices have been expected as next-generation power-saving devices. We
succeeded in fabricating very large area (1 cm2) SiC Schottky barrier diodes (SBDs) with forward current of 300 A by
inactivating areas including crystal defects. Heterojunction diodes with avalanche energy of over 2000 mJ/cm 2 were
also developed. The reliability of gate oxide films of SiC DMOSFETs was enhanced to a level that is comparable to silicon
power devices by improving oxidation techniques. We succeeded in fabricating SiC trench MOSFETs with low on-
resistance (1.7 m cm2). 250 °C operation of intelligent power modules (IPMs) with SiC DMOSFETs was achieved by
using a new attachment technology.
Read more …
Source : Physica Status Solidi (a)
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Novembre 2009 | www.knowmade.fr