Brian S. Freer has authored or co-authored over 50 publications including papers, conference presentations, and patents related to ion implantation technology. His publications span from 1990 to present and cover topics such as ion implantation processes, beam characterization, and system design improvements. He has contributed significantly to advancing ion implantation technology through his extensive research and development work.

1. Publication list for Brian S. Freer
(In reverse chronological order)
Papers
Low Energy Ion Implantation Using the Arsenic Dimer Ion: Process Characterization and Throughput
Improvement, P. Kopalidis, B. S. Freer, and M. Rathmell, J. Electrochem. Soc., Volume 152, Issue 8, pp. G623-
G626 (2005).
Effect of Implant Temperature on Transient Enhanced Diffusion of Boron in Regrown Silicon After
Amorphization by Si+
or Ge+
Implantation, K. S. Jones, K. Moller, J. Chen, M. Puga-Lambers, B. Freer, J.
Berstein [sic], and L. Rubin, J. Appl. Phys. 81, pp. 6051–6055 (1997).
X-ray Scattering Studies of SiOx/Si/Ge(001), S. D. Kosowsky, C.-H. Hsu, P. S. Pershan, J. Bevk and B. S. Freer,
Applied Surf. Sci. 84 (1995).
Boron diffusion in strained Si1-xGex epitaxial layers, N. Moriya, L. C. Feldman, H. S. Luftman, C. A. King, J.
Bevk, and B. Freer, Phys. Rev. Lett. 71, pp. 883-886 (1993).
X-ray reflectivity studies of SiO2/Si(001), T. A. Rabedeau, I. M. Tidswell, P. S. Pershan, J. Bevk and B. S. Freer,
Appl. Phys. Lett. 59 (1991).
X-ray scattering studies of the SiO2/Si(001) interfacial structure, T. A. Rabedeau, I. M. Tidswell, P. S.
Pershan, J. Bevk and B. S. Freer, Appl. Phys. Lett. 59 (1991).
Low Temperature Homoepitaxy on Si(111), B. E. Weir, B. S. Freer, R. L. Headrick, D. J. Eaglesham, G. H.
Gilmer, J. Bevk, and L. C. Feldman, Appl. Phys. Lett. 59 (1991).
Ordered Monolayer Structures on Si(001), R. L. Headrick, B. E. Weir, A. F. J. Levi, B. S. Freer, J. Bevk, L. C.
Feldman, J. Vac. Sci. & Techn., A 9 (4) (1991).
Native Oxidation of the Si(100) Surface: Evidence for an Interfacial Phase, G. Renaud, P. H. Fuoss, A.
Ourmazd, J. Bevk, B. S. Freer, and P. O. Hahn, Appl. Phys. Lett. 58 (1991).
Isoelectronic Bound Exciton Emission from Si-Rich Silicon-Germanium Alloys, R. A. Modavis, D. G. Hall, J.
Bevk, B. S. Freer, L. C. Feldman, and B. E. Weir, Appl. Phys. Lett. 57 (1990)
Influence of Surface Reconstruction on the Orientation of Homoepitaxial Silicon Films, R. L. Headrick, B. E.
Weir, J. Bevk, B. S. Freer, D. J. Eaglesham, and L. C. Feldman, Phys. Rev. Lett. 65 (1990).
Magnetoresistance and the Spin-Flop Transition in Single-Crystal La2CuO4-y, Tineke Thio, C. Y. Chen, B. S.
Freer, D. R. Gabbe, H. P. Jenssen, M. A. Kastner, P. J. Picone, N. W. Preyer, and R. J. Birgeneau, Phys. Rev. B 41
(1990).
Meetings, Talks, Posters, and Trade Journal Articles
Direct Measurement of Beam Angle in a High Current Ion Implanter, B. S. Freer, L. M. Rubin, M. A. Graf, D. E.
Hoglund, D. Newman, K. Ditzler, K. Elshot, and T. Romig, in Proceedings of the International Conference on
Ion Implantation Technology, Marseille, France, pp. 554-557 (2006).
Angle Measurement and Control in High Current Ion Implantation (oral presentation), B. S. Freer, M. A. Graf,
and D. E. Hoglund, in Proceedings of the International Conference on Ion Implantation Technology, pp. 507-
510, Marseille, France (2006).
Enabling Concepts for Low-Energy Ion Implantation, Solid State Technology, M. A. Graf and B. S. Freer,
Volume 48, Issue 4 (2005).
Productivity Improvements on the Ultra Platform, M. Graf, B. Freer, D. Hoglund, T. J. Hsieh, H. Rutishauser,
and D. Tieger, International Conference on Ion Implantation Technology, Taipei, Taiwan (2004).

2. In situ Beam Angle Measurement in a Multi-wafer High Current Ion Implanter (oral presentation), B. S.
Freer, R. N. Reece, M. A. Graf, T. Parrill, and D. Polner, International Conference on Ion Implantation
Technology, Taipei, Taiwan (2004).
Mass Resolution: The Effects of Resolving Aperture and Beam Width on Beam Current and Energetic
Contamination, B. S. Freer, M. A. Graf, J. L. Chow, D. R. Tieger, and C. Sohl, International Conference on Ion
Implantation Technology, Taipei, Taiwan (2004).
Improvement of Dose Reproducibility in Axcelis High-Current Implanters, GJ Ra, D. Hoglund, B. Freer, R.
Reece, and S. Kim, International Conference on Ion Implantation Technology, Taipei, Taiwan (2004).
Molecular N-type Dopant Implants, A. Agarwal, A. Stevenson, M. S. Ameen, B. S. Freer, J. M. Poate, Y. Ohta, K.
Nakajima, K. Kimura, International Conference on Ion Implantation Technology, Taos, NM (2002).
Low Energy Implant Throughput Improvement by Using the Arsenic Dimer Ion (As2
+
) on the Axcelis
GSDIII/LED Ion Implanter, P. Kopalidis, C. Sohl, B. S. Freer, M. Ameen, R. Reece, and M. Rathmell,
International Conference on Ion Implantation Technology, Taos, NM (2002).
Process and Productivity Improvements during High Pressure Photoresist Outgassing, N. Carpenter, T.
Fecteau, J. Chow, M. S. Ameen, B. S. Freer, and P. Lustiber, International Conference on Ion Implantation
Technology, Taos, NM (2002).
Germanium Operation on the GSDIII/LED and Ultra High Current Ion Implanters, B. S. Freer, H. Rutishauser,
D. R. Tieger, M. A. Graf, M. Stone, A. S. Perel, H. Matsushita, H. Muto, and M. Kabasawa, International
Conference on Ion Implantation Technology, Taos, NM (2002).
Stabilization and Stripping of High Current Implanted Photoresists, M. S. Ameen, D. Marshall, B. S. Freer, D.
Whiteside, T. Noble, and D. Getchell, International Conference on Ion Implantation Technology, Kyoto,
Japan (1998).
Low Energy Model for Ion Implantation of Arsenic and Boron into (100) Single-Crystal Silicon, B. Obradovic,
S. J. Morris, M. Morris, S. Tian, G. Wang, K. Beardmore, C. Snell, B. Freer, D. McCarron, and A. F. Tasch,
Proceedings of the Ultra Shallow Junctions Conference, Research Triangle Park, NC (1997).
Effect of Energy and Dose on Transient-Enhanced Diffusion and Defect Microstructure in Low-Energy-High-
Dose As+
- Implanted Si, V. Krishnamoorthy, D. Venables, K. Moeller, K. S. Jones, and B. Freer, MRS
Proceedings 439 (1996).
The Effect of End of Range Loops on Transient Enhanced Diffusion in Si , K. S. Jones, K. Moller, J. Chen, M.
Puga-Lambers, M. Law, D. S. Simons, P. Chi, B. Freer, J. Bernstein, L. Rubin, R. Monton, R. G. Elliman, M.
Petravic, and P. Kringhøj, International Conference on Ion Implantation Technology, Austin, TX (1996).
Optimization of Secondary Electron Flood Design for the Production of Low Energy Electrons, R. N. Reece, Y.
Erokhin, R. Simonton, B. Freer, Lin Kuang-Lun, Lin Frank-Pohua, International Conference on Ion
Implantation Technology, Austin, TX (1996).
The Effect of Dose Rate on Ion Implanted Impurity Profiles in Silicon, S. Tian, S.-H. Yang, S. Morris, K. Parab,
A. F. Tasch, D. Kamenitsa, R. Reece, B. Freer, R. B. Simonton, and C. Magee, Nucl. Instr. Meth. Phys. Res. 112,
pp. 144–147 (1996).
X-ray Scattering Studies of the Si(001)/SiOx Interface Structure, T. A. Rabedeau, I. M. Tidswell, P. S. Pershan,
J. Bevk, and B. S. Freer, Materials Research Society Fall Meeting, Symp. G, Boston, MA, (1990).
Long-Range Correlations between Steps on Si(001): A Grazing Incidence X-ray Scattering Study, G. Renaud,
P. H. Fuoss, J. Bevk, B. S. Freer, and P. O. Hahn, Materials Research Society Fall Meeting Symp. G, Boston, MA
(1990).
Optical Emission from Be-Related Isoelectronic Impurity Complexes in Si-Ge Alloys and Superlattices, R. A.
Modavis, D. G. Hall, J. Bevk, B. S. Freer, L. C. Feldman, and B. E. Weir, Materials Research Society Fall Meeting
Symp. G, Boston, MA (1990).

3. Photoluminescence from Excitons Bound to Be-Related Isoelectronic Complexes in Si-Ge Alloys and
Superlattices, R. A. Modavis, D. G. Hall, J. Bevk, and B. S. Freer, 37th Annual American Vacuum Society Symp.
and Topical Conf., Toronto, Canada (1990).
Photoluminescence from Excitons Bound to Be-Be Complexes in Si-Ge Alloys and Superlattices Grown by
Molecular Beam Epitaxy, R. A. Modavis, D. G. Hall, J. Bevk, B. S. Freer, L. C. Feldman, and B. E. Weir, American
Physical Society March Meeting, Anaheim, CA (1990).
Photoluminescence from Beryllium-Doped Silicon-Germanium Alloys Grown by Molecular Beam Epitaxy, J.
Bevk, B. S. Freer, L. C. Feldman, and B. E. Weir, March 1990 APS Mtg., Anaheim, CA (1990).
Step Arrays at the Si(001)-SiO2 Interface, J. Bevk, G. Renaud, P. H. Fuoss, A. Ourmazd, B. S. Freer, and P. O.
Hahn, March 1990 APS Mtg., MPTG Focused Session on Semiconductor Interfaces, Anaheim, CA (1990).
U.S. Patents
Method and System for Growing a Thin Film Using a Gas Cluster Ion Beam, J. Hautala, M. Graf, Y. Shao, and B.
Freer, No. 9,103,031, 11-Aug-2015
Ion Beam Angle Calibration and Emittance Measurement System for Ribbon Beams, M. Farley, D. Polner, G.
Ryding, T. Smick, T. Sakase, R. Horner, E. Eisner, P. Eide, B. Freer, M. Lambert, D. Beckel, No. 8,168,941, 1-
May-2012
Methods and Systems for Trapping Ion Beam Particles and Focusing an Ion Beam, P. L. Kellerman, V. M.
Benveniste, A. S. Perel, B. S. Freer, and M. A. Graf, No. 7,598,495, 6-Oct-2009
Closed Loop Dose Control for Ion Implantation, Y. Huang, B. S. Freer, J. Ye, C. Godfrey, M. A. Graf, and P.
Splinter, No. 7,557,363, 7-Jul-2009
Ion Beam Angle Measurement Systems and Methods Employing Varied Angle Slot Arrays for Ion
Implantation Systems, B. S. Freer, No. 7,476,876, 13-Jan-2009
Ion Beam Angle Measurement Systems and Methods for Ion Implantation Systems, B. S. Freer and A. S.
Perel, No. 7,435,977, 14-Oct-2008
Ion Beam Incident Angle Detector for Ion Implant Systems, R. N. Reece, M. A. Graf, T. Parrill, and B. S. Freer,
No. 6,828,572, 7-Dec-2004
System and Method for Cleaning Contaminated Surfaces in an Ion Implanter, J. D. Bernstein, P. M. Kopalidis,
and B. S. Freer, No. 6,221,169, 24-Apr-2001
Method to Operate GeF4 Gas in Hot Cathode Discharge Ion Sources, J. Chen, B. S. Freer, J. F. Grant, L. T.
Jacobs, and J. L. Malenfant, Jr., No. 6,215,125, 10-Apr-2001
Ion Implanter Electron Shower Having Enhanced Secondary Electron Emission, P. L. Kellerman, J. D.
Bernstein, and B. S. Freer, No. 5,909,031, 1-Jun-1999
Biased and Serrated Extension Tube for Ion Implanter Electron Shower, J. D. Bernstein, P. L. Kellerman, and
B. S. Freer, No. 5,903,009, 11-May-1999