The document is a device modeling report for a digital transistor with part number DTD123YK manufactured by ROHM. It includes the components, manufacturer, and PSpice model parameters for the transistor. It also provides circuit simulation results comparing the transistor's ON characteristics, OFF characteristics, DC current gain, and output voltage versus output current to the datasheet specifications. The simulations show good agreement with errors generally below 3%.
The document is a device modeling report that provides specifications and simulation results for a digital transistor with part number DTC113ZUA. It includes parameters for the PSpice model, graphs comparing the transistor's ON and OFF characteristics from simulations and datasheets, and simulations of current gain and output voltage versus output current. The report evaluates the accuracy of the PSpice model against datasheet specifications.
The document is a device modeling report for a digital transistor with part number DTD123YK manufactured by ROHM. It includes the components, manufacturer, and PSpice model parameters for the transistor. It also provides circuit simulation results comparing the transistor's ON characteristics, OFF characteristics, DC current gain, and output voltage versus output current to the datasheet specifications. The simulations show good agreement with errors generally below 3%.
The document is a device modeling report that provides specifications and simulation results for a digital transistor with part number DTC113ZUA. It includes parameters for the PSpice model, graphs comparing the transistor's ON and OFF characteristics from simulations and datasheets, and simulations of current gain and output voltage versus output current. The report evaluates the accuracy of the PSpice model against datasheet specifications.
This document summarizes the simulation results of a digital transistor model. It includes comparisons of the transistor's ON and OFF characteristics, current gain, and output voltage versus current with the manufacturer's datasheet specifications. The simulation results match the datasheet values to within 3% error for most test conditions.
This document summarizes the modeling parameters and simulation results for a digital transistor with part number DTC143EUA manufactured by ROHM. It includes the PSpice model parameters, graphs comparing the simulation and datasheet results for input voltage vs. output current in ON/OFF modes, output current vs. input voltage, DC current gain vs. output current, and output voltage vs. output current. The simulation results match well with the datasheet specifications with errors generally below 5%.
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This document summarizes the modeling and simulation of a digital transistor with part number DTC144EKA from manufacturer ROHM. It includes the component details, model parameters, and comparison of simulation results to datasheet specifications for key transistor characteristics like ON/OFF resistance, current gain, and output voltage versus current. The simulation matches the datasheet characteristics to within 5% for most test conditions.
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This document summarizes the simulation results of a digital transistor model. It includes comparisons of the transistor's ON and OFF characteristics, current gain, and output voltage versus current with the manufacturer's datasheet specifications. The simulation results match the datasheet values to within 3% error for most test conditions.
This document summarizes the modeling parameters and simulation results for a digital transistor with part number DTC143EUA manufactured by ROHM. It includes the PSpice model parameters, graphs comparing the simulation and datasheet results for input voltage vs. output current in ON/OFF modes, output current vs. input voltage, DC current gain vs. output current, and output voltage vs. output current. The simulation results match well with the datasheet specifications with errors generally below 5%.
This document summarizes the results of modeling and simulating the DTC123EM digital transistor from ROHM. It includes the component parameters, evaluation circuits used, and comparison of the simulation results to the datasheet specifications for key transistor characteristics like ON/OFF resistance, current gain, and output voltage versus current. The simulation results matched the datasheet specifications to within 4% for most test conditions.
This document summarizes the modeling and simulation of a digital transistor with part number DTC144EKA from manufacturer ROHM. It includes the component details, model parameters, and comparison of simulation results to datasheet specifications for key transistor characteristics like ON/OFF resistance, current gain, and output voltage versus current. The simulation matches the datasheet characteristics to within 5% for most test conditions.
This document summarizes the modeling and simulation of a digital transistor with part number DTC144ESA from manufacturer ROHM. It includes the component details, model parameters, and comparison of simulation results to datasheet specifications for key transistor characteristics like ON/OFF resistance, current gain, and output voltage versus current. The simulation matches the datasheet characteristics to within 5% for most test conditions.
This document summarizes the simulation results of a digital transistor model. It includes the component details, manufacturer, and simulation comparisons of key transistor characteristics like input/output voltage and current relationships, gain, and saturation voltage. The simulations match the datasheet specifications with low errors.
The document lists attendance percentages for classes at Layton Primary School between 13-17 January 2014. Class 3SM had the highest attendance at 99.1% and Year 5 class 5W had the lowest attendance at 89.3%. Overall school attendance for the period was 95%.
The document summarizes the minutes from the kick-off meeting of the AL4ED project in London on October 28, 2013. It discusses the 14 partner organizations present, tasks and responsibilities assigned to each partner, topics and dates for project mobilities, and plans for developing pedagogical cards, a website, dissemination activities, and evaluating project outcomes. Key decisions included distributing tasks related to coordination, website development, collecting materials, and hosting future mobilities among the Italian, Latvian, French, UK, Norwegian, Turkish, and potentially Greek partners. Mobility locations and dates were scheduled through July 2015 to allow partners to present topics, collect materials, and evaluate the partnership's work.
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The document is a device modeling report for a digital transistor with part number DTC114ESA manufactured by ROHM. It includes the component details, model parameters, simulation results comparing the transistor's ON/OFF characteristics and current gain to datasheet specifications, and evaluation circuits used in the simulations. The simulations show good agreement with the datasheet specifications, with most error values below 5%.
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SPICE MODEL of DTD113ZS in SPICE PARK
1. Device Modeling Report
COMPONENTS: Digital transistors (built-in resistors)
PART NUMBER: DTD113ZS
MANUFACTURER: ROHM
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
2. PSpice
model Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
3. Input voltage vs. output current (ON characteristics)
Circuit simulation result
Evaluation circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
4. Comparison Graph
Circuit Simulation Result
Simulation Result
Condition @ Vo = 0.3 V
VI(ON) (V)
Ic(A) Error (%)
Datasheet Simulation
500u 670m 665.133m -0.72642
1m 700m 687.419m -1.79729
2m 710m 711.650m 0.23239
5m 750m 751.38m 0.18400
10m 800m 794.163m -0.72962
50m 1 1.0392 3.92000
100m 1.4 1.3411 -4.20714
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
5. Output current vs. input voltage (OFF characteristics)
Circuit simulation result
Evaluation circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004