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Broadband alignment scheme for a stepper
system using combinations of diffractive and
refractive lenses
Yasuhiro Yoshitake and G. Michael Morris
By using broadband illumination, a stepper alignment system is less sensitive to asymmetric coverageof
photoresist around alignment targets and realizes high accuracy. However, a projection lens causes
chromatic aberrations at the wavelengths in the broadband light. To correct the chromatic aberrations,
we employed a Schupmann system composed of a projection lens, an achromat lens, and a refractive-
diffractive hybrid lens. With the proposed system the spread of image planes and the magnification
difference in the spectral range from 550 to 650 nm can be reduced to 50 pum
and 0.05%,whereas without
the correction system these values are 11.28 mm and 1.18%,respectively.
1. Introduction
An exposure apparatus known as a stepper is a main
production machine for semiconductor fabrication.
A stepper is used to image circuit patterns recorded
on a mask and to print them on a wafer through the
use of a step-and-repeat procedure. Generally, the
circuit patterns are stratified into many layers. To
retain large-scale integrated circuit performance, one
must accurately align a given layer to the top layer on
the wafer. Alignment is usually accomplishedby the
detection of alignment marks on the wafer. Prior to
exposure, the wafer is usually coated with a photore-
sist-type material through the use of a spin-coating
method. In the coating process, the photoresist
spreads in the radial directions and often forms an
asymmetrical shape around the alignment marks.
The intensity oflight reflected from the photoresist is
sensitive to the thickness of the photoresist. There-
fore, images of the asymmetrically covered alignment
marks can be deformed asymmetrically; this produces
degradation in the alignment accuracy. However, it
is well known that broadband illumination can re-
duce this problem.' With broadband illumination,
the intensity of the reflected light is less sensitive to
Y. Yoshitake is with the Production Engineering Research
Laboratory, Hitachi, Ltd., 292 Yoshida-cho, Totsuka-ku, Yoko-
hama 244, Japan. G. M. Morris is with the Institute of Optics,
University of Rochester, Rochester, New York, 14627.
Received 23 September 1993; revised manuscript received 28
March 1994.
0003-6935/94/347971-09$06.00/0.
o 1994 Optical Society of America.
fluctuation of the photoresist thickness, and sym-
metrical images can be expected in spite of asymmetri-
cal photoresist coverage.
A broadband-light alignment system that is sepa-
rated from the projection lens, i.e., a system that is
not through the lens (TTL), was described by Nishi.2
However, there are difficulties with Nishi's system.
In practice, the alignment system is mounted with
structures of steel, and the system can move slightly
as a result of environmental factors, such as tempera-
ture or vibration. For instance, if the alignment
system moves by 0.05 lm, a non-TTL system will
have an alignment error of 0.05 pum. However, a
TTL system can reduce the error corresponding to
the reduction ratio of the projection lens. Typically
the reduction ratio is 1/5. Therefore, even if the
alignment system moves by 0.05 jm, a TTL system
willhave only a 0.01-jLmerror. There is, however, a
different problem with a TTL alignment system that
uses broadband light. Normally the projection lens
is designed to have the best performance at the
exposure wavelength (typically, an ultraviolet wave-
length). The wavelength of the light used for align-
ment should be selected at a different wavelength
from the exposure light so as not to expose the
photoresist. Therefore, TTL systems that use broad-
band light have difficulty generating high-quality
images because of the longitudinal chromatic aberra-
tion introduced by the projection lens.
To overcome this problem, Komoriya et al.3
de-
scribed a chromatic aberration correction system.
However, to counteract the dispersion introduced by
the projection lens, this invention had to employ
1 December 1994 / Vol. 33, No. 34 / APPLIED OPTICS 7971
many lens elements. The projection lens itself usu-
ally consists of more than ten elements, and each
glass element introduces dispersion, which causes
chromatic aberration. Therefore, using a conven-
tional approach to correct these aberrations, one
essentially needs to use a comparable number of
lenses in the alignment system. To reduce the num-
ber of elements, the lens elements in the correction
system must provide a large and negative value for
the dispersion. Glass elements cannot satisfy this
photoresist and a silicon substrate as shown in Fig. 1.
Thin-film theory can be used to predict the relation
between the reflected intensity and photoresist thick-
ness.6 According to this theory, one obtains the
reflected intensity at a given thickness, d, by using
the followingformula:
I(d) = V2[I Rp(d) 1
2
+ |R 8(d) 12], (1)
in which
fXB -fOmax
rk,1(01)2 + rk,2(01) + 2rk,1(01)rk,2(01)COS 6(d, 0, X)
=AA JO 1 + rk,1(01)
2
rk,2(01) + 2
rkl(01)rk,2(01)cos 8(d,01,A)
8(d, 0, X)= - 2n2d 1
(k =p, s),
sin 2
01 1/2
n2
2
/
0
ma = sin-' N.A
cos Oi/ni - cos i+l/ni+l
P cos Oi/ni + cos i+l/ni+l
ni cos Oi- ni+1 cos i+1
S ni cos 0i + ni+1 cos Oi+1
(i = 1, 2), p-polarized case,
(i = 1, 2), s-polarized case,
requirement. However, a diffractive lens has pre-
ciselythese characteristics. The dispersion (orAbbe
Vnumber) of a diffractive lens is - 3.45, whereas that
of glass remains between 20 and 80.4 The Vnumber
of a diffractive lens is approximately seven times
more dispersive than that of any known glass and
exhibits a negative dispersion, i.e., with a diffractive
lens a red ray of light bends more than a blue one,
whereas with glass a blue ray bends more than a red
one. The operation of a diffractive lens relies on
interference and diffraction, rather than on the refrac-
tion of light as in a glass lens. Through the utiliza-
tion of a diffractive lens, it is possible to reduce
significantly the number of elements necessary for
the correction system.
In this paper we consider a broadband alignment
scheme designed for operation with an h-line (405.5-
nm) projection lens. In Section 2 the specifications
of the alignment system are given. In Section 3 a
solution for an achromatic alignment system is illus-
trated, and the system is optimized with a commercial
lens design program. The fabrication method for
the diffractive-refractive lenses is discussed in Sec-
tion 4, and experimental results are given.
where the subscripts 1, 2, and 3 indicate air, photore-
sist, and silicon, respectively, and A and B are the
minimum and the maximum wavelengths in the
broadband region. The cases of monochromatic illu-
mination (550 nm) and broadband illumination (550-
650 nm) are illustrated in Fig. 2. In the broadband
illumination case the fluctuations of the reflected
intensity, which indicates the sensitivity of the align-
ment accuracy to the fluctuation of photoresist thick-
ness, smooth rapidly for photoresist thicknesses above
1 jm, whereas in the monochromatic (550-nm)illumi-
nation case the fluctuations are still significant for
photoresist thicknesses up to 4 jLm. In Section 3we
consider the design of an achromatic alignment sys-
tem that uses broadband light in the spectral range
from 550 to 650 nm for illumination.
3. Solutionfor an AchromaticAlignment System
A solution of an achromatic imaging system that uses
diffractive lenses, consisting of a modified Schup-
1. Air
2. Specification of the Alignment System
For a projection lens, we selectedan h-line (405.5-nm)
lens from the patent literatures and modified it to
improve the optical performance at the h-line wave-
length. The modified lens has a reduction ratio of
1/5, a N.A. of 0.35, and a field size of 10 mm x 10
mm. To evaluate the effect of broadband illumina-
tion, we examined a simple structure composed of
2. Photoresist
3. Silicon
01
ri
:,
§U.WI$.........M..
,,i .,g....
:g.
: R- . .>m.
I ,
NJ
Fig. 1. Photoresist-silicon structure for the evaluation of fluctua-
tion amplitude of reflection intensity.
7972 APPLIED OPTICS / Vol. 33, No. 34 / 1 December 1994
.
0X11111
8- ~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~..
....
...
...
...............
,-... ... ...........................
......................................
..............................................
,0
D
0 1 2 3
Photoresist Thickness (pm)
(a)
> 1.1
- 0.
.0..
C,°
O.
Q) O.:
a)
CCnI
u.,
0 1 2 3 4
Photoresist Thickness (m)
(b)
Fig.2. Reflectedintensity versus photoresist thickness inthe case
of (a)monochromatic illumination and (b)broadband illumination.
In (b), the fluctuation amplitude of the reflection intensity con-
verges rapidly near 1 plm;in (a), fluctuation lasts until 4 pAm.
mann system,7 was given by Faklis and Morris.8
Figure 3 shows a configuration of the Schupmann
system. Lens 2 is located at the image point of lens 1
and also images lens 1onto lens 3. Lens 3 relays the
image formed by lens 1. A condition required for
achromatic imaging is given by the following equa-
tion:
marginal Lens 1 Lens3
ray Lens2
Aprincipal
A B C
Fig. 3. Layout of a Schupmann lens system. Lens 2 is locatedat
the image point of lens 1 and also images lens 1 onto lens 3. Lens
3 relays the imageformed bylens 1.
location of the image plane at the center wavelength
(Xo= 600 nm), and Fig. 5(b) illustrates the relation-
ship of the image magnification difference, AM, at
different wavelengths, respectively. It is found that
peak-to-peak values of AL and AM of the h-line
projection lens in the spectral range between 550 and
650 nm are 11.28 mm and 1.18%,respectively.
Using thin-lens theory, we find the chromatic
change in image height of the principal ray (CCP) of
lens 1in Fig. 2 to be essentially zero. However, the
CCP of an actual projection lens is not zero. Figure
6 shows the CCP of the h-line projection lens. The
short-dashed curve, the solid curve, and the long-
dashed curve indicate the principal rays of wave-
lengths of 550, 600, and 650 nm, respectively. The
CCP denotes the height difference between the rays
at wavelengths of 550 and 650 nm at the image plane
of light formed with light at the 600-nm wavelength,
and it indicates the amount of lateral chromatic
aberrations For the achromatic Schupmann sys-
tem to operate properly, the CCP of the h-line
projection lens should be made to be zero. The CCP
can be described by the followingequation:
CCP = - ,I ns3sYsAns,
Uk s
(3)
in which
B2
sP
3(X)
= - [(X)- ,(o)]+ p
3(Xo), (2)
where is an operating wavelength, Xois the center
(or design) wavelength in the range of operating
wavelengths, 'p,is the power of lens 1, 3is the power
of lens 3, B is the distance between lens 1 and lens 2,
and C is the distance between lens 2 and lens
3. Figure 4shows a practical configuration. Lenses
1,2, and 3in Fig. 3are replaced by the projection lens,
the achromat lens, and the refractive-diffractive hy-
brid lens, respectively.
Alignment marks are usually located at the edge of
the field so that the optical path of the alignment
system does not interfere with the exposure light.
For our alignment system, the object height is se-
lected to be 10 mm, and it follows that the system is
an off-axisoptical system. With the h-line projection
lens, each wavelength produces a different image
point. Figure 5(a) shows the difference in image
plane location, AL, at wavelength , relative to the
dn, dns- 1
An, = - I
in ns-.1
dn5 = n5(X2) -n,(X)
n = n(Xo),
Lens
Sri SZ Sa Achromat
 /I/ Lens
ImagePlane
Wafer
ProjectionLens
Fig. 4. Practical configuration of an achromatic system based on
the Schupmann system. Lenses 1, 2,and 3 in Fig. 3 are replaced
by a projection lens, an achromat lens, and a diffractive-refractive
hybrid lens, respectively. Symbols Sa, S2
, and Si are defined in text.
1 December 1994 / Vol. 33, No. 34 / APPLIED OPTICS 7973
> 1.
C'
a)
- 0.1
CD O.,
0
=0 O.
a)
I 0.:
E
E
-J
540 560 580 600 620 640 660
Wavelength (nm)
(a)
0.4
0.0
-0.4
.........
.......... ........ ............ .. ............
_ _ ~~~~~~~~~~~~~~~~~~~~~~~~.
_._
...A............._.
. ......................... ........ _..---i -............
... ...........- 'i
6
t .*
............ ....... . -.
... .--
.. --
o....
-z
................ A.................. ..... . . i .. .........
. ... ..... ..... ..... .. .. ... .... ...... .... ..... ..... . . . ..... ..... ..... ......... ....
- - - - - ''' - - - - - '''- -.
I
...
.... ... ...........
540 560 580 600 620 640 660
Wavelength (nm)
(b)
Fig. 5. Chromatic image differencesof the h-line projection lens;
(a)shows the difference in image plane location, AL,at wavelength
X, relative to the location of the image plane at the center
wavelength (X
0 = 600 nm), (b) illustrates the relationship of the
image magnificationdifference,AM,at different wavelengths.
where Uk' denotes the convergence angle of the
marginal ray in the image space, n and P, are the
refractive index and the angle of refraction of the
principal ray in the medium after surface S, respec-
tively, and Y,is the height of the marginal ray.
Figure 7 shows a layout of the h-line projection
lens. One can make the CCP be zero by changing
the location of the aperture stop. The relation be-
tween the aperture stop location and the CCP is
shown in Fig. 8. Note that the CCP is zero near
surface 15. In fact, when the stop is located 1.9 mm
behind surface 14, the CCP becomes exactly zero.
SlO S15 S20 S25
Fig. 7. Layout of the h-line projection lens. The numerals are
allotted to the surface in order from the objectside.
However, in a practical system it is impossible to set
the stop at such a location because it will degrade the
performance of the projection lens at the exposure
light. Instead, one can obtain the same effect (see
Fig. 4) by setting the stop in contact with the refrac-
tive-diffractive lens. In Fig. 4 symbol Sa indicates
an actual stop of the projection lens. Symbol S,
shows the location of the stop that causes the CCP to
be zero, and symbolSzishows the image of the stop S,
that is seen from the image side. Distance B in Eq.
(1)is defined as the distance between the location of
Szzand the front principal point of the achromat lens.
Distance C is defined as the distance between the rear
principal point and the stop of the refractive-
diffractive lens. The front principal point of the
achromat lens is located at the image point of the
projection lens at the center wavelength (X
0 = 600
nm).
Once a focal length of the achromat lens is deter-
mined, one obtains distance C by using the following
equation:
1 11
F2 B+C (4)
where F2 is a focallength of the achromat lens and is
set to F2 = 100 mm. Distance B is found to be
951.89 mm. Substituting these parameters into Eq.
(4), we calculate distance C as C = 111.74 mm.
For an achromatic imaging system to be achieved,
it is required that Eq. (1) be satisfied. The wave-
length dependence of the power ofthe projection lens,
(pA(X),
is shown in Fig.9. The h-line projection lens is
designed to be least sensitive to the wavelength
variations around the h line ( = 405.5 nm). The
Wafer Projection Lens CCP
-0.1
Paraxial
Image Plane
(@ = 600 nm)
Fig.6. Illustration ofthe CCPfor the h-lineprojection lens. The
short-dashed curve, the solid curve, the long-dashed curve,anudthe
CCP are definedin text.
4 6 8 10 12 14 16 18 20
Surface Number
Fig. 8. Relation of the aperture stop location and the CCP.
When the stop is set 1.9 mm behind surface 14, the CCP becomes
exactly zero.
7974 APPLIED OPTICS / Vol. 33, No. 34 / 1 December 1994
SI S5
1
_ |
7.29x1C
7.;
-E 7.;
72
E 72
7..
. 27-.1'
. .. . .
........
28- .............
27-
26-
25 1 ......
....
...
. . ..
24
'3 ...
..
.
350 400 450 500
.. 60,
0
... ..
I..,
550 600 650 700
Wavelength nm]
Fig. 9. Wavelength dependence of the power of the h-line projec-
tion lens, p1
(X).
spectral range of the light (550-650 nm) used for the
alignment system is far enough from the h line to
produce an approximately linear dependence of lens
power, cp,(X,versus wavelength, X. In Eq. (1), 0
3(Xo)
is set to 1/55 mm-' sothat the total magnification of
the system will be approximately 5/1. By substitut-
ing the above parameters into Eq. (1), we obtain the
required power for lens 3, p3(A). Figure 10 shows a
plot of the required lens power, p
3(A). Note that
cp
3(X) is also approximately linear because of the
linearity of p,(X)in the wavelength range between
550 and 650 nm. The followingsolution is based on
this linearity of optical powers with wavelength.
However, it is important to emphasize that this
solution is also applicable to projection lenses de-
signed for operation with an i-line (X= 365 nm)
exposure wavelength or the excimer laser (X= 248
nm) illumination, because these lenses are also opti-
mized at the exposure wavelength and their relations
between the power and the wavelength are also
approximately linear in the range of visible light used
for the alignment system.
To obtain the best fit to the theoretical curve shown
in Fig. 10, we employ a refractive-diffractive hybrid
lens. The hybrid lens in Fig. 4 consists of a refrac-
tive doublet and a diffractive lens element. Using
thin-lens theory, we find that the total power of the
hybrid lens is given by
93(X) = PrA(X) + (PrB(X)+ d(X), (5)
where PrA is the power of the first part of the
refractive doublet, (PrB
is the power of the secondpart
18.8x10-
E 18.
{^ 18.
-0-
17.
-
......
..... ................ ........... ..... . .....
~~~~~~~~~~.....4
..... ........
.....
... ......
B
...
. -
.................. ...... ..... ..........
.........................
..........
..
- .
-....... ............. z .........
........
.........
..... .......- . .-
+ -, ..................
3 - r-V-
4-~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~
540 560 580 600 620 640 660
Wavelength [nm]
Fig. 10. Required lens power,9p(X), for an achromatic system.
of the refractive doublet, and pd is the power of the
diffractive lens. The first derivative of Eq. (5) is
given by
(PrA(Xo)
[ VrA +
in which
(PrB(Xo)1
rBJ]
lnrA(XO)- 1
nrA(X2)- nrA(Xl)
nrB(XO) - 1
AX
(Pd(Xo) X
Xo
(6)
IrB=nrB(X2) - B(Xl)
where Xe= 600 nm, X, = 550 nm, X2 = 650 nm, and
AX = 100 nm.
To obtain the best fitto the theoretical curve shown
in Fig. 10, we find that the following condition is
required:
(PrA(XO) (PrB(XO)
~~+ = 0;
VrA VrB
(7)
this is the condition required if the refractive doublet
is to be an achromat. Using Eqs. (6)and (7),we find
the required power of the diffractive lens to be
d(XO) = 0 A93,
and the total power of the doublet is
(PrA(XO)+ PrB(XO)= P3() - (Pd(XO)-
(8)
(9)
The required powers for each component of the
doublet are obtained through the use of Eqs. (7)and
(9) as follows:
(PrA
- V Lv
i3(X
0
) -(Pd(Xe)],
Vr - VrBYO) YAoA
VrB
-v Vr A O)-Y
(10)
(11)
Alternatively, these powers can be described in terms
of surface curvatures:
(PrA(Xo)
= [rA(XO) - 1](c2 - C)
(prB(XO)= [nrB(XO)- 1](c3 -C2),
(12)
(13)
where cl and c2 are the curvatures of the front and the
rear surface of the first part of the doublet, respec-
tively and c3 is a curvature of the rear surface of the
latter part of the doublet. To simplify the fabrica-
tion of the diffractive lens on the rear surface of the
doublet, we set curvature c3 to zero (i.e., it is required
to be a flat surface). Once we calculate pd(AO)
by
using Eq. (8),we obtain c2 by using Eqs. (11) and (13);
we calculate cl by using Eqs. (10) and (12). For this
design example, we choose the following glass types
for the doublet: Schott BK7 and F2, which are
1 December 1994 / Vol. 33, No. 34 / APPLIED OPTICS 7975
I7
inexpensive glass types commonly used in industry.
Using the design methodology described above, we
obtain the first-order design parameters for the hy-
brid lens: YPd(XO)
= 0.0075 mm-', cl = 0.0255 mm-',
e2 = -0.0241 mm-', and c3 = 0. These parameters
and distance Care then optimized through the utiliza-
tion of commercial lens-design software. Table 1
shows the lens data obtained after optimization.
For optimization with commercial lens-design pro-
grams, it is convenient to describe the diffractivelens
in the same manner as a refractive lens. Sweatt
proposed a convenient method to describe a diffrac-
tive lens for use with lens-design software in his
paper.' 0 With this method, the power of a diffractive
lens, pd(X), can be described as a thin lens that
possesses a very large index ofrefraction, i.e.,
9pd(A)= [n(X) - 1](CA - CB), (14)
Table1. LensDatafor theAchromaticAlignmentSystema
Curvature Thickness
Surface (mm-') (mm) Glass
Object
S1
S2
S3
S4
S5
S6
S7
S8
S9
S10
Sl
S12
S13
S14
S15
S16
S17
S18
S19
S20
S21
S22
S23
S24
S25
S26
S27
S28
S29
S30
S31
S32
Stop
S34
S35
S36
Image
0.00000000
0.00920404
0.01812579
-0.02523014
-0.01903636
-0.00902611
-0.01236653
0.00285564
-0.01021591
0.00531074
-0.00915616
-0.00964527
0.00775857
0.00762794
-0.00574017
0.00872893
-0.00162331
0.01518926
0.01815358
-0.01119420
0.00558275
0.00000000
-0.02072136
-0.01501763
-0.00302574
-0.00817112
0.00079734
-0.00336819
0.00331052
0.00042021
0.01555694
-0.02223210
-0.00554232
0.03318571
-0.04330520
0.00000000
-0.00000063
0.00000000
12.836980
3.810000
30.649824
6.350000
12.037365
13.390880
4.795520
31.750000
2.540000
35.560000
1.893291
8.321446
1.783080
40.640000
2.540000
31.750000
2.540000
7.620000
48.874223
7.620000
3.540000
15.151860
21.414740
3.169920
17.780000
2.540000
15.240000
0.000000
15.240000
622.440000
6.230000
2.500000
100.473524
5.300000
4.000000
0.000100
103.095781
0.000000
Air
Schott LF5
Air
Fused silica
Air
Fused silica
Air
Fused silica
Air
Fused silica
Air
Schott LF5
Air
Fused silica
Air
Fused silica
Air
Fused silica
Air
Schott LF5
Air
Air
Fused silicia
Air
Fused silica
Air
Fused silica
Fused silica
Air
Schott SK11
Schott SF5
Air
Schott BK7
Schott F2
Virtual
Air
in which
X
n(X) = N + 1,
X0
(15)
where CA and CB are the curvatures of a diffractivelens
and n(X) is an effectiverefractive index of the diffrac-
tive lens. To modelthe behavior of a diffractive lens
accurately, N should be a very large number. In
practice, N is typically set to N = 10,000. Using this
method, one can describe a diffractive lens just like a
refractive lens. The curvature, CA, which corre-
sponds to the curvature of the rear surface of the
doublet in the hybrid lens, is set to zero for ease of
fabrication.
Figure 11(a)shows a plot of the differencein image
plane location, AL, at wavelength X,relative to the
location of the image plane at the center wavelength
(X
0 = 600 nm), and Fig. 11(b)shows the relationship
of the image magnification difference, AM,at differ-
ent wavelengths, respectively. Note that in the re-
gionfrom 550to 650nm, the spread of ALis less than
50 jim and the spread of AM is less than 0.05%.
Originally, without the correction system (see Fig. 5),
these numbers were 11.28 mm and 1.18%, respec-
tively.
4. Design and Fabrication of the Diffractive Lenses
Once a value for pd(AO)
is obtained, a blaze profile of a
diffractive lens surface, d(r), can be calculated as
20
-
0
-20
540
T ......
....
...
...
.............................................................
g
g
,
T
_e,_..
..
....
...
........
.......
...........
...
......
..T
...
...
......
........
....
......
..
1-
--I--.-
---- --7:--~~~~~~~--
----------............
A-'---'---------t- ~~~~~~~~~~~~~~~~~~.....
.... ........... ............................-
_._._t__.
............... .. .............. .......................
580 600 620
560 640 660
wavelength [nm]
(a)
0.10
0.00
-0.10
F I I I I I I
540 560 580 600 620 640 660
wavelength [nm]
(b)
Fig. 11. Chromatic image differences with the chromatic aberra-
tion correction system. It is found that peak-to-peakvalues of(a)
AL and (b)AM in the wavelength range between 550 and 650 nm
are 50 plmand 0.05%, respectively.
7976 APPLIED OPTICS / Vol. 33, No. 34 / 1 December 1994
I. ..............
.....
......
.. .......
aThe broadband (500-650 nm) alignment system design has a
magnification of 5x, a N.A. of 0.175, and an object height of
10 mm.
. .........................
.......................
.............................................. .........
.....................
..............
...................... ................... --------------
.......................
. ............................................................. ... ....................... ...................... .......................
...........
T.......................
.........
.... ...
. .................
.......................
.
1. Exposure & Etch
2. Exposure & Etch
3. Silver Deposition
4. Nickel Plating
5. Mold & UV Curing
IIH I I I I
N- - - I
-
I I
I I I I444
1
X4444444444
Fig. 12. Fabrication process of a four-step diffractive lens.
processing steps are discussed in detail in the text.
follows:
-[ (Pd(X) 2]
d(rm) = dnmax 2X rmJ,
in which
d -______2(m - 1)X
0 1/2
dmax=I ( I
ndlif
- 1I (Pd(X) i
[2mX
0 1/2
• rm < P(e
(17) Fig. 13. Scanning electron microscope photographs of (a) the
siliconmaster and (b)the nickelstamper.
where m is an integer > 0, rmis the coordinate in the
radial direction, and ndif is a refractive index of an
actual material of the diffractive lens. Equation (16)
gives a parabolic profile. We approximated this pro-
fileby using four phase steps. Figure 12 illustrates
the fabrication process for a four-step diffractive lens.
In steps 1 and 2, a four-step silicon master is fabri-
cated through the use of a photolithographic litho-
graphic process. So that a conductive surface is
obtained, silveris deposited in step 3. Then, through
the use of electroplating, a nickel (negative) stamper
is formed on the silicon master in step 4. Step 5
illustrates the molding process. We used UV curing
cement to mold the four-step diffractive lens on the
flat surface ofa doublet glass lens. After UV curing,
the nickel stamper is separated from the hybrid lens.
Figure 13shows scanning electron microscopephoto-
graphs of the silicon master and the nickel stamper.
In the present design, the maximum depth is 0.8 jim
and the minimum zonewidth at the edgeof the lens is
approximately 3 jim.
5. Experimental Results
Figure 14 illustrates an experimental setup for the
evaluation of the paraxial performance of our correc-
tion system. We used a triplet lens as a substitute
for the projection lens. With the illumination of the
center wavelength (600 nm), the first image of
Fig. 14. Experimental setup for the evaluation of the paraxial
performance of the correction system.
1 December 1994 / Vol. 33, No. 34 / APPLIED OPTICS 7977
(a)
The
(16)
(b)
TestTarget TLenset Achromat Hybrid
Lens Lens CCDCamera
(a) Without Correction (b) With Correction
=550nm
k = 600nm
k= 650nm
Fig. 15. Photographs of images of the test targets, showing (a) the first images formed by the triplet lens (i.e., without the correction
system), (b)the secondary images of the test targets formed by the correction system. Numbers in the pictures indicate the numbers of
lines/1 mm.
the test target is formed at the front principal point of
the achromat lens. As a way to simulate the longitu-
dinal chromatic aberration of the projection lens, the
test target and the triplet lens are moved by the
amount corresponding to AL at the wavelengths of
550 and 650 nm in Fig. 5(a), respectively. Relative
locations of the first images formed by the triplet lens
coincide with those of the projection lens. Although
any high-order aberrations are different fromthose of
the projection lens, paraxial longitudinal chromatic
aberration can be corrected in this setup. Figure
15(b) shows secondary images of the test targets
formed by the correction system. For comparison,
the first images formed by the triplet lens (i.e.,
without the correction system) are shown in Fig.
15(a). Without the correction system, images at 550
and 650 nm are severely degraded because they are
out of focus. However, with the correction system,
the differences of the first image points are well
corrected at the secondary image plane on the CCD
camera. It should be noted that degradation of the
image with the correction system is mainly due to the
difference of the higher-order aberrations between
the experimental setup and the real projection lens.
In Fig.15(b),flare light can be seen inthe background.
The flare light is associated with undiffracted light
light-diffracted higher diffraction orders. One can
reduce the flare light significantly by increasing the
number of steps in the structure, i.e., by improving
the diffraction efficiencyof the diffractive lens.
6. Conclusion
We have proposed a broadband alignment scheme for
a stepper system that uses a refractive-diffractive
hybrid lens. The hybrid lens consists of a refractive
achromatic doublet and a diffractive lens. A diffrac-
tive lens generates a linear dependence of lens power
versus wavelength, which matches a characteristic of
the h-line projection lens in the visible light region.
A refractive achromatic doublet controls the total
power. To correct a lateral chromatic aberration, we
set an aperture stop in contact with the hybrid lens.
With the proposed system, the spread ofimage planes
and magnification difference in the spectral range
from 550 to 650 nm can be reduced to 50 m and
0.05%, whereas without the correction system these
values are 11.28 mm and 1.18%,respectively.
A photolithographic process and electroplating
method were used to fabricate a surface-relief master
with which diffractive lenses were molded with UV
cement. The experimental results show good image
correction over the 550-650-nm wavelength band.
It is noted that this design methodology is also
applicable to i-line and excimer laser stepper systems,
or to any other monochromatic lenses that have a
linear dependence of lens power versus wavelength.
7978 APPLIED OPTICS / Vol. 33, No. 34 / 1 December 1994
The authors are grateful to D. Faklis at Rochester
Photonics Corporation for his helpful discussions on
fabrication of diffractive lenses, D. Lilienfeld at the
Cornell National Nanofabrication Facilityfor fabricat-
ing the diffractive lens master, and B. McIntyre and
M. Missig at the University of Rochester for their
assistance in evaluating the diffractive lens.
References
1. K. Ota, N. Magome, and K. Nishi, "New alignment sensors for
wafer stepper," in Optical/Laser Microlithography IV, V.Pol,
ed., Proc. Soc. Photo-Opt. Instrum. Eng. 1463, 304-314
(1991).
2. K. Nishi, "Alignment system for exposure apparatus," U.S.
patent 4,962,318 (9 October 1990).
3. S. Komoriya, T. Kawanabe, S. Nakagawa, T. Oosakaya, and N.
Iriki, "Method of making semiconductor integrated circuit,
pattern detecting method, and system for semiconductor
alignment and reduced stepping exposure for use in same,"
U.S. patent 5,094,539 (10 March 1992).
4. T. Sone and N. George, "Hybrid diffractive-refractive lenses
and achromats," Appl.Opt. 27, 2960-2971 (1988).
5. D. R. Shafer, "Lens usable in the ultraviolet," U.S. patent
4,770,477 (13 September 1988).
6. M. Born and E. Wolf,Principles of Optics (Pergamon, Bristol,
1974), pp. 64-93.
7. A. Offner, "Field lenses and secondary axial aberration," Appl.
Opt. 8, 1735-1736 (1969).
8. D. Faklis and G. M. Morris, "Broadband imaging with holo-
graphic lenses," Opt. Eng. 28, 592-598 (1989).
9. W.T.Welford,Aberrations of OpticalSystems (Hilger,Bristol,
1989), p. 207.
10. W. C. Sweatt, "Describing holographic optical elements as
lenses," J. Opt.Soc.Am.67, 803-808 (1977).
1 December 1994 / Vol. 33, No. 34 / APPLIED OPTICS 7979

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Diffractive Optics Manufacturing

  • 1. Broadband alignment scheme for a stepper system using combinations of diffractive and refractive lenses Yasuhiro Yoshitake and G. Michael Morris By using broadband illumination, a stepper alignment system is less sensitive to asymmetric coverageof photoresist around alignment targets and realizes high accuracy. However, a projection lens causes chromatic aberrations at the wavelengths in the broadband light. To correct the chromatic aberrations, we employed a Schupmann system composed of a projection lens, an achromat lens, and a refractive- diffractive hybrid lens. With the proposed system the spread of image planes and the magnification difference in the spectral range from 550 to 650 nm can be reduced to 50 pum and 0.05%,whereas without the correction system these values are 11.28 mm and 1.18%,respectively. 1. Introduction An exposure apparatus known as a stepper is a main production machine for semiconductor fabrication. A stepper is used to image circuit patterns recorded on a mask and to print them on a wafer through the use of a step-and-repeat procedure. Generally, the circuit patterns are stratified into many layers. To retain large-scale integrated circuit performance, one must accurately align a given layer to the top layer on the wafer. Alignment is usually accomplishedby the detection of alignment marks on the wafer. Prior to exposure, the wafer is usually coated with a photore- sist-type material through the use of a spin-coating method. In the coating process, the photoresist spreads in the radial directions and often forms an asymmetrical shape around the alignment marks. The intensity oflight reflected from the photoresist is sensitive to the thickness of the photoresist. There- fore, images of the asymmetrically covered alignment marks can be deformed asymmetrically; this produces degradation in the alignment accuracy. However, it is well known that broadband illumination can re- duce this problem.' With broadband illumination, the intensity of the reflected light is less sensitive to Y. Yoshitake is with the Production Engineering Research Laboratory, Hitachi, Ltd., 292 Yoshida-cho, Totsuka-ku, Yoko- hama 244, Japan. G. M. Morris is with the Institute of Optics, University of Rochester, Rochester, New York, 14627. Received 23 September 1993; revised manuscript received 28 March 1994. 0003-6935/94/347971-09$06.00/0. o 1994 Optical Society of America. fluctuation of the photoresist thickness, and sym- metrical images can be expected in spite of asymmetri- cal photoresist coverage. A broadband-light alignment system that is sepa- rated from the projection lens, i.e., a system that is not through the lens (TTL), was described by Nishi.2 However, there are difficulties with Nishi's system. In practice, the alignment system is mounted with structures of steel, and the system can move slightly as a result of environmental factors, such as tempera- ture or vibration. For instance, if the alignment system moves by 0.05 lm, a non-TTL system will have an alignment error of 0.05 pum. However, a TTL system can reduce the error corresponding to the reduction ratio of the projection lens. Typically the reduction ratio is 1/5. Therefore, even if the alignment system moves by 0.05 jm, a TTL system willhave only a 0.01-jLmerror. There is, however, a different problem with a TTL alignment system that uses broadband light. Normally the projection lens is designed to have the best performance at the exposure wavelength (typically, an ultraviolet wave- length). The wavelength of the light used for align- ment should be selected at a different wavelength from the exposure light so as not to expose the photoresist. Therefore, TTL systems that use broad- band light have difficulty generating high-quality images because of the longitudinal chromatic aberra- tion introduced by the projection lens. To overcome this problem, Komoriya et al.3 de- scribed a chromatic aberration correction system. However, to counteract the dispersion introduced by the projection lens, this invention had to employ 1 December 1994 / Vol. 33, No. 34 / APPLIED OPTICS 7971
  • 2. many lens elements. The projection lens itself usu- ally consists of more than ten elements, and each glass element introduces dispersion, which causes chromatic aberration. Therefore, using a conven- tional approach to correct these aberrations, one essentially needs to use a comparable number of lenses in the alignment system. To reduce the num- ber of elements, the lens elements in the correction system must provide a large and negative value for the dispersion. Glass elements cannot satisfy this photoresist and a silicon substrate as shown in Fig. 1. Thin-film theory can be used to predict the relation between the reflected intensity and photoresist thick- ness.6 According to this theory, one obtains the reflected intensity at a given thickness, d, by using the followingformula: I(d) = V2[I Rp(d) 1 2 + |R 8(d) 12], (1) in which fXB -fOmax rk,1(01)2 + rk,2(01) + 2rk,1(01)rk,2(01)COS 6(d, 0, X) =AA JO 1 + rk,1(01) 2 rk,2(01) + 2 rkl(01)rk,2(01)cos 8(d,01,A) 8(d, 0, X)= - 2n2d 1 (k =p, s), sin 2 01 1/2 n2 2 / 0 ma = sin-' N.A cos Oi/ni - cos i+l/ni+l P cos Oi/ni + cos i+l/ni+l ni cos Oi- ni+1 cos i+1 S ni cos 0i + ni+1 cos Oi+1 (i = 1, 2), p-polarized case, (i = 1, 2), s-polarized case, requirement. However, a diffractive lens has pre- ciselythese characteristics. The dispersion (orAbbe Vnumber) of a diffractive lens is - 3.45, whereas that of glass remains between 20 and 80.4 The Vnumber of a diffractive lens is approximately seven times more dispersive than that of any known glass and exhibits a negative dispersion, i.e., with a diffractive lens a red ray of light bends more than a blue one, whereas with glass a blue ray bends more than a red one. The operation of a diffractive lens relies on interference and diffraction, rather than on the refrac- tion of light as in a glass lens. Through the utiliza- tion of a diffractive lens, it is possible to reduce significantly the number of elements necessary for the correction system. In this paper we consider a broadband alignment scheme designed for operation with an h-line (405.5- nm) projection lens. In Section 2 the specifications of the alignment system are given. In Section 3 a solution for an achromatic alignment system is illus- trated, and the system is optimized with a commercial lens design program. The fabrication method for the diffractive-refractive lenses is discussed in Sec- tion 4, and experimental results are given. where the subscripts 1, 2, and 3 indicate air, photore- sist, and silicon, respectively, and A and B are the minimum and the maximum wavelengths in the broadband region. The cases of monochromatic illu- mination (550 nm) and broadband illumination (550- 650 nm) are illustrated in Fig. 2. In the broadband illumination case the fluctuations of the reflected intensity, which indicates the sensitivity of the align- ment accuracy to the fluctuation of photoresist thick- ness, smooth rapidly for photoresist thicknesses above 1 jm, whereas in the monochromatic (550-nm)illumi- nation case the fluctuations are still significant for photoresist thicknesses up to 4 jLm. In Section 3we consider the design of an achromatic alignment sys- tem that uses broadband light in the spectral range from 550 to 650 nm for illumination. 3. Solutionfor an AchromaticAlignment System A solution of an achromatic imaging system that uses diffractive lenses, consisting of a modified Schup- 1. Air 2. Specification of the Alignment System For a projection lens, we selectedan h-line (405.5-nm) lens from the patent literatures and modified it to improve the optical performance at the h-line wave- length. The modified lens has a reduction ratio of 1/5, a N.A. of 0.35, and a field size of 10 mm x 10 mm. To evaluate the effect of broadband illumina- tion, we examined a simple structure composed of 2. Photoresist 3. Silicon 01 ri :, §U.WI$.........M.. ,,i .,g.... :g. : R- . .>m. I , NJ Fig. 1. Photoresist-silicon structure for the evaluation of fluctua- tion amplitude of reflection intensity. 7972 APPLIED OPTICS / Vol. 33, No. 34 / 1 December 1994 . 0X11111
  • 3. 8- ~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~.. .... ... ... ............... ,-... ... ........................... ...................................... .............................................. ,0 D 0 1 2 3 Photoresist Thickness (pm) (a) > 1.1 - 0. .0.. C,° O. Q) O.: a) CCnI u., 0 1 2 3 4 Photoresist Thickness (m) (b) Fig.2. Reflectedintensity versus photoresist thickness inthe case of (a)monochromatic illumination and (b)broadband illumination. In (b), the fluctuation amplitude of the reflection intensity con- verges rapidly near 1 plm;in (a), fluctuation lasts until 4 pAm. mann system,7 was given by Faklis and Morris.8 Figure 3 shows a configuration of the Schupmann system. Lens 2 is located at the image point of lens 1 and also images lens 1onto lens 3. Lens 3 relays the image formed by lens 1. A condition required for achromatic imaging is given by the following equa- tion: marginal Lens 1 Lens3 ray Lens2 Aprincipal A B C Fig. 3. Layout of a Schupmann lens system. Lens 2 is locatedat the image point of lens 1 and also images lens 1 onto lens 3. Lens 3 relays the imageformed bylens 1. location of the image plane at the center wavelength (Xo= 600 nm), and Fig. 5(b) illustrates the relation- ship of the image magnification difference, AM, at different wavelengths, respectively. It is found that peak-to-peak values of AL and AM of the h-line projection lens in the spectral range between 550 and 650 nm are 11.28 mm and 1.18%,respectively. Using thin-lens theory, we find the chromatic change in image height of the principal ray (CCP) of lens 1in Fig. 2 to be essentially zero. However, the CCP of an actual projection lens is not zero. Figure 6 shows the CCP of the h-line projection lens. The short-dashed curve, the solid curve, and the long- dashed curve indicate the principal rays of wave- lengths of 550, 600, and 650 nm, respectively. The CCP denotes the height difference between the rays at wavelengths of 550 and 650 nm at the image plane of light formed with light at the 600-nm wavelength, and it indicates the amount of lateral chromatic aberrations For the achromatic Schupmann sys- tem to operate properly, the CCP of the h-line projection lens should be made to be zero. The CCP can be described by the followingequation: CCP = - ,I ns3sYsAns, Uk s (3) in which B2 sP 3(X) = - [(X)- ,(o)]+ p 3(Xo), (2) where is an operating wavelength, Xois the center (or design) wavelength in the range of operating wavelengths, 'p,is the power of lens 1, 3is the power of lens 3, B is the distance between lens 1 and lens 2, and C is the distance between lens 2 and lens 3. Figure 4shows a practical configuration. Lenses 1,2, and 3in Fig. 3are replaced by the projection lens, the achromat lens, and the refractive-diffractive hy- brid lens, respectively. Alignment marks are usually located at the edge of the field so that the optical path of the alignment system does not interfere with the exposure light. For our alignment system, the object height is se- lected to be 10 mm, and it follows that the system is an off-axisoptical system. With the h-line projection lens, each wavelength produces a different image point. Figure 5(a) shows the difference in image plane location, AL, at wavelength , relative to the dn, dns- 1 An, = - I in ns-.1 dn5 = n5(X2) -n,(X) n = n(Xo), Lens Sri SZ Sa Achromat /I/ Lens ImagePlane Wafer ProjectionLens Fig. 4. Practical configuration of an achromatic system based on the Schupmann system. Lenses 1, 2,and 3 in Fig. 3 are replaced by a projection lens, an achromat lens, and a diffractive-refractive hybrid lens, respectively. Symbols Sa, S2 , and Si are defined in text. 1 December 1994 / Vol. 33, No. 34 / APPLIED OPTICS 7973 > 1. C' a) - 0.1 CD O., 0 =0 O. a) I 0.:
  • 4. E E -J 540 560 580 600 620 640 660 Wavelength (nm) (a) 0.4 0.0 -0.4 ......... .......... ........ ............ .. ............ _ _ ~~~~~~~~~~~~~~~~~~~~~~~~. _._ ...A............._. . ......................... ........ _..---i -............ ... ...........- 'i 6 t .* ............ ....... . -. ... .-- .. -- o.... -z ................ A.................. ..... . . i .. ......... . ... ..... ..... ..... .. .. ... .... ...... .... ..... ..... . . . ..... ..... ..... ......... .... - - - - - ''' - - - - - '''- -. I ... .... ... ........... 540 560 580 600 620 640 660 Wavelength (nm) (b) Fig. 5. Chromatic image differencesof the h-line projection lens; (a)shows the difference in image plane location, AL,at wavelength X, relative to the location of the image plane at the center wavelength (X 0 = 600 nm), (b) illustrates the relationship of the image magnificationdifference,AM,at different wavelengths. where Uk' denotes the convergence angle of the marginal ray in the image space, n and P, are the refractive index and the angle of refraction of the principal ray in the medium after surface S, respec- tively, and Y,is the height of the marginal ray. Figure 7 shows a layout of the h-line projection lens. One can make the CCP be zero by changing the location of the aperture stop. The relation be- tween the aperture stop location and the CCP is shown in Fig. 8. Note that the CCP is zero near surface 15. In fact, when the stop is located 1.9 mm behind surface 14, the CCP becomes exactly zero. SlO S15 S20 S25 Fig. 7. Layout of the h-line projection lens. The numerals are allotted to the surface in order from the objectside. However, in a practical system it is impossible to set the stop at such a location because it will degrade the performance of the projection lens at the exposure light. Instead, one can obtain the same effect (see Fig. 4) by setting the stop in contact with the refrac- tive-diffractive lens. In Fig. 4 symbol Sa indicates an actual stop of the projection lens. Symbol S, shows the location of the stop that causes the CCP to be zero, and symbolSzishows the image of the stop S, that is seen from the image side. Distance B in Eq. (1)is defined as the distance between the location of Szzand the front principal point of the achromat lens. Distance C is defined as the distance between the rear principal point and the stop of the refractive- diffractive lens. The front principal point of the achromat lens is located at the image point of the projection lens at the center wavelength (X 0 = 600 nm). Once a focal length of the achromat lens is deter- mined, one obtains distance C by using the following equation: 1 11 F2 B+C (4) where F2 is a focallength of the achromat lens and is set to F2 = 100 mm. Distance B is found to be 951.89 mm. Substituting these parameters into Eq. (4), we calculate distance C as C = 111.74 mm. For an achromatic imaging system to be achieved, it is required that Eq. (1) be satisfied. The wave- length dependence of the power ofthe projection lens, (pA(X), is shown in Fig.9. The h-line projection lens is designed to be least sensitive to the wavelength variations around the h line ( = 405.5 nm). The Wafer Projection Lens CCP -0.1 Paraxial Image Plane (@ = 600 nm) Fig.6. Illustration ofthe CCPfor the h-lineprojection lens. The short-dashed curve, the solid curve, the long-dashed curve,anudthe CCP are definedin text. 4 6 8 10 12 14 16 18 20 Surface Number Fig. 8. Relation of the aperture stop location and the CCP. When the stop is set 1.9 mm behind surface 14, the CCP becomes exactly zero. 7974 APPLIED OPTICS / Vol. 33, No. 34 / 1 December 1994 SI S5 1 _ |
  • 5. 7.29x1C 7.; -E 7.; 72 E 72 7.. . 27-.1' . .. . . ........ 28- ............. 27- 26- 25 1 ...... .... ... . . .. 24 '3 ... .. . 350 400 450 500 .. 60, 0 ... .. I.., 550 600 650 700 Wavelength nm] Fig. 9. Wavelength dependence of the power of the h-line projec- tion lens, p1 (X). spectral range of the light (550-650 nm) used for the alignment system is far enough from the h line to produce an approximately linear dependence of lens power, cp,(X,versus wavelength, X. In Eq. (1), 0 3(Xo) is set to 1/55 mm-' sothat the total magnification of the system will be approximately 5/1. By substitut- ing the above parameters into Eq. (1), we obtain the required power for lens 3, p3(A). Figure 10 shows a plot of the required lens power, p 3(A). Note that cp 3(X) is also approximately linear because of the linearity of p,(X)in the wavelength range between 550 and 650 nm. The followingsolution is based on this linearity of optical powers with wavelength. However, it is important to emphasize that this solution is also applicable to projection lenses de- signed for operation with an i-line (X= 365 nm) exposure wavelength or the excimer laser (X= 248 nm) illumination, because these lenses are also opti- mized at the exposure wavelength and their relations between the power and the wavelength are also approximately linear in the range of visible light used for the alignment system. To obtain the best fit to the theoretical curve shown in Fig. 10, we employ a refractive-diffractive hybrid lens. The hybrid lens in Fig. 4 consists of a refrac- tive doublet and a diffractive lens element. Using thin-lens theory, we find that the total power of the hybrid lens is given by 93(X) = PrA(X) + (PrB(X)+ d(X), (5) where PrA is the power of the first part of the refractive doublet, (PrB is the power of the secondpart 18.8x10- E 18. {^ 18. -0- 17. - ...... ..... ................ ........... ..... . ..... ~~~~~~~~~~.....4 ..... ........ ..... ... ...... B ... . - .................. ...... ..... .......... ......................... .......... .. - . -....... ............. z ......... ........ ......... ..... .......- . .- + -, .................. 3 - r-V- 4-~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~ 540 560 580 600 620 640 660 Wavelength [nm] Fig. 10. Required lens power,9p(X), for an achromatic system. of the refractive doublet, and pd is the power of the diffractive lens. The first derivative of Eq. (5) is given by (PrA(Xo) [ VrA + in which (PrB(Xo)1 rBJ] lnrA(XO)- 1 nrA(X2)- nrA(Xl) nrB(XO) - 1 AX (Pd(Xo) X Xo (6) IrB=nrB(X2) - B(Xl) where Xe= 600 nm, X, = 550 nm, X2 = 650 nm, and AX = 100 nm. To obtain the best fitto the theoretical curve shown in Fig. 10, we find that the following condition is required: (PrA(XO) (PrB(XO) ~~+ = 0; VrA VrB (7) this is the condition required if the refractive doublet is to be an achromat. Using Eqs. (6)and (7),we find the required power of the diffractive lens to be d(XO) = 0 A93, and the total power of the doublet is (PrA(XO)+ PrB(XO)= P3() - (Pd(XO)- (8) (9) The required powers for each component of the doublet are obtained through the use of Eqs. (7)and (9) as follows: (PrA - V Lv i3(X 0 ) -(Pd(Xe)], Vr - VrBYO) YAoA VrB -v Vr A O)-Y (10) (11) Alternatively, these powers can be described in terms of surface curvatures: (PrA(Xo) = [rA(XO) - 1](c2 - C) (prB(XO)= [nrB(XO)- 1](c3 -C2), (12) (13) where cl and c2 are the curvatures of the front and the rear surface of the first part of the doublet, respec- tively and c3 is a curvature of the rear surface of the latter part of the doublet. To simplify the fabrica- tion of the diffractive lens on the rear surface of the doublet, we set curvature c3 to zero (i.e., it is required to be a flat surface). Once we calculate pd(AO) by using Eq. (8),we obtain c2 by using Eqs. (11) and (13); we calculate cl by using Eqs. (10) and (12). For this design example, we choose the following glass types for the doublet: Schott BK7 and F2, which are 1 December 1994 / Vol. 33, No. 34 / APPLIED OPTICS 7975 I7
  • 6. inexpensive glass types commonly used in industry. Using the design methodology described above, we obtain the first-order design parameters for the hy- brid lens: YPd(XO) = 0.0075 mm-', cl = 0.0255 mm-', e2 = -0.0241 mm-', and c3 = 0. These parameters and distance Care then optimized through the utiliza- tion of commercial lens-design software. Table 1 shows the lens data obtained after optimization. For optimization with commercial lens-design pro- grams, it is convenient to describe the diffractivelens in the same manner as a refractive lens. Sweatt proposed a convenient method to describe a diffrac- tive lens for use with lens-design software in his paper.' 0 With this method, the power of a diffractive lens, pd(X), can be described as a thin lens that possesses a very large index ofrefraction, i.e., 9pd(A)= [n(X) - 1](CA - CB), (14) Table1. LensDatafor theAchromaticAlignmentSystema Curvature Thickness Surface (mm-') (mm) Glass Object S1 S2 S3 S4 S5 S6 S7 S8 S9 S10 Sl S12 S13 S14 S15 S16 S17 S18 S19 S20 S21 S22 S23 S24 S25 S26 S27 S28 S29 S30 S31 S32 Stop S34 S35 S36 Image 0.00000000 0.00920404 0.01812579 -0.02523014 -0.01903636 -0.00902611 -0.01236653 0.00285564 -0.01021591 0.00531074 -0.00915616 -0.00964527 0.00775857 0.00762794 -0.00574017 0.00872893 -0.00162331 0.01518926 0.01815358 -0.01119420 0.00558275 0.00000000 -0.02072136 -0.01501763 -0.00302574 -0.00817112 0.00079734 -0.00336819 0.00331052 0.00042021 0.01555694 -0.02223210 -0.00554232 0.03318571 -0.04330520 0.00000000 -0.00000063 0.00000000 12.836980 3.810000 30.649824 6.350000 12.037365 13.390880 4.795520 31.750000 2.540000 35.560000 1.893291 8.321446 1.783080 40.640000 2.540000 31.750000 2.540000 7.620000 48.874223 7.620000 3.540000 15.151860 21.414740 3.169920 17.780000 2.540000 15.240000 0.000000 15.240000 622.440000 6.230000 2.500000 100.473524 5.300000 4.000000 0.000100 103.095781 0.000000 Air Schott LF5 Air Fused silica Air Fused silica Air Fused silica Air Fused silica Air Schott LF5 Air Fused silica Air Fused silica Air Fused silica Air Schott LF5 Air Air Fused silicia Air Fused silica Air Fused silica Fused silica Air Schott SK11 Schott SF5 Air Schott BK7 Schott F2 Virtual Air in which X n(X) = N + 1, X0 (15) where CA and CB are the curvatures of a diffractivelens and n(X) is an effectiverefractive index of the diffrac- tive lens. To modelthe behavior of a diffractive lens accurately, N should be a very large number. In practice, N is typically set to N = 10,000. Using this method, one can describe a diffractive lens just like a refractive lens. The curvature, CA, which corre- sponds to the curvature of the rear surface of the doublet in the hybrid lens, is set to zero for ease of fabrication. Figure 11(a)shows a plot of the differencein image plane location, AL, at wavelength X,relative to the location of the image plane at the center wavelength (X 0 = 600 nm), and Fig. 11(b)shows the relationship of the image magnification difference, AM,at differ- ent wavelengths, respectively. Note that in the re- gionfrom 550to 650nm, the spread of ALis less than 50 jim and the spread of AM is less than 0.05%. Originally, without the correction system (see Fig. 5), these numbers were 11.28 mm and 1.18%, respec- tively. 4. Design and Fabrication of the Diffractive Lenses Once a value for pd(AO) is obtained, a blaze profile of a diffractive lens surface, d(r), can be calculated as 20 - 0 -20 540 T ...... .... ... ... ............................................................. g g , T _e,_.. .. .... ... ........ ....... ........... ... ...... ..T ... ... ...... ........ .... ...... .. 1- --I--.- ---- --7:--~~~~~~~-- ----------............ A-'---'---------t- ~~~~~~~~~~~~~~~~~~..... .... ........... ............................- _._._t__. ............... .. .............. ....................... 580 600 620 560 640 660 wavelength [nm] (a) 0.10 0.00 -0.10 F I I I I I I 540 560 580 600 620 640 660 wavelength [nm] (b) Fig. 11. Chromatic image differences with the chromatic aberra- tion correction system. It is found that peak-to-peakvalues of(a) AL and (b)AM in the wavelength range between 550 and 650 nm are 50 plmand 0.05%, respectively. 7976 APPLIED OPTICS / Vol. 33, No. 34 / 1 December 1994 I. .............. ..... ...... .. ....... aThe broadband (500-650 nm) alignment system design has a magnification of 5x, a N.A. of 0.175, and an object height of 10 mm. . ......................... ....................... .............................................. ......... ..................... .............. ...................... ................... -------------- ....................... . ............................................................. ... ....................... ...................... ....................... ........... T....................... ......... .... ... . ................. ....................... .
  • 7. 1. Exposure & Etch 2. Exposure & Etch 3. Silver Deposition 4. Nickel Plating 5. Mold & UV Curing IIH I I I I N- - - I - I I I I I I444 1 X4444444444 Fig. 12. Fabrication process of a four-step diffractive lens. processing steps are discussed in detail in the text. follows: -[ (Pd(X) 2] d(rm) = dnmax 2X rmJ, in which d -______2(m - 1)X 0 1/2 dmax=I ( I ndlif - 1I (Pd(X) i [2mX 0 1/2 • rm < P(e (17) Fig. 13. Scanning electron microscope photographs of (a) the siliconmaster and (b)the nickelstamper. where m is an integer > 0, rmis the coordinate in the radial direction, and ndif is a refractive index of an actual material of the diffractive lens. Equation (16) gives a parabolic profile. We approximated this pro- fileby using four phase steps. Figure 12 illustrates the fabrication process for a four-step diffractive lens. In steps 1 and 2, a four-step silicon master is fabri- cated through the use of a photolithographic litho- graphic process. So that a conductive surface is obtained, silveris deposited in step 3. Then, through the use of electroplating, a nickel (negative) stamper is formed on the silicon master in step 4. Step 5 illustrates the molding process. We used UV curing cement to mold the four-step diffractive lens on the flat surface ofa doublet glass lens. After UV curing, the nickel stamper is separated from the hybrid lens. Figure 13shows scanning electron microscopephoto- graphs of the silicon master and the nickel stamper. In the present design, the maximum depth is 0.8 jim and the minimum zonewidth at the edgeof the lens is approximately 3 jim. 5. Experimental Results Figure 14 illustrates an experimental setup for the evaluation of the paraxial performance of our correc- tion system. We used a triplet lens as a substitute for the projection lens. With the illumination of the center wavelength (600 nm), the first image of Fig. 14. Experimental setup for the evaluation of the paraxial performance of the correction system. 1 December 1994 / Vol. 33, No. 34 / APPLIED OPTICS 7977 (a) The (16) (b) TestTarget TLenset Achromat Hybrid Lens Lens CCDCamera
  • 8. (a) Without Correction (b) With Correction =550nm k = 600nm k= 650nm Fig. 15. Photographs of images of the test targets, showing (a) the first images formed by the triplet lens (i.e., without the correction system), (b)the secondary images of the test targets formed by the correction system. Numbers in the pictures indicate the numbers of lines/1 mm. the test target is formed at the front principal point of the achromat lens. As a way to simulate the longitu- dinal chromatic aberration of the projection lens, the test target and the triplet lens are moved by the amount corresponding to AL at the wavelengths of 550 and 650 nm in Fig. 5(a), respectively. Relative locations of the first images formed by the triplet lens coincide with those of the projection lens. Although any high-order aberrations are different fromthose of the projection lens, paraxial longitudinal chromatic aberration can be corrected in this setup. Figure 15(b) shows secondary images of the test targets formed by the correction system. For comparison, the first images formed by the triplet lens (i.e., without the correction system) are shown in Fig. 15(a). Without the correction system, images at 550 and 650 nm are severely degraded because they are out of focus. However, with the correction system, the differences of the first image points are well corrected at the secondary image plane on the CCD camera. It should be noted that degradation of the image with the correction system is mainly due to the difference of the higher-order aberrations between the experimental setup and the real projection lens. In Fig.15(b),flare light can be seen inthe background. The flare light is associated with undiffracted light light-diffracted higher diffraction orders. One can reduce the flare light significantly by increasing the number of steps in the structure, i.e., by improving the diffraction efficiencyof the diffractive lens. 6. Conclusion We have proposed a broadband alignment scheme for a stepper system that uses a refractive-diffractive hybrid lens. The hybrid lens consists of a refractive achromatic doublet and a diffractive lens. A diffrac- tive lens generates a linear dependence of lens power versus wavelength, which matches a characteristic of the h-line projection lens in the visible light region. A refractive achromatic doublet controls the total power. To correct a lateral chromatic aberration, we set an aperture stop in contact with the hybrid lens. With the proposed system, the spread ofimage planes and magnification difference in the spectral range from 550 to 650 nm can be reduced to 50 m and 0.05%, whereas without the correction system these values are 11.28 mm and 1.18%,respectively. A photolithographic process and electroplating method were used to fabricate a surface-relief master with which diffractive lenses were molded with UV cement. The experimental results show good image correction over the 550-650-nm wavelength band. It is noted that this design methodology is also applicable to i-line and excimer laser stepper systems, or to any other monochromatic lenses that have a linear dependence of lens power versus wavelength. 7978 APPLIED OPTICS / Vol. 33, No. 34 / 1 December 1994
  • 9. The authors are grateful to D. Faklis at Rochester Photonics Corporation for his helpful discussions on fabrication of diffractive lenses, D. Lilienfeld at the Cornell National Nanofabrication Facilityfor fabricat- ing the diffractive lens master, and B. McIntyre and M. Missig at the University of Rochester for their assistance in evaluating the diffractive lens. References 1. K. Ota, N. Magome, and K. Nishi, "New alignment sensors for wafer stepper," in Optical/Laser Microlithography IV, V.Pol, ed., Proc. Soc. Photo-Opt. Instrum. Eng. 1463, 304-314 (1991). 2. K. Nishi, "Alignment system for exposure apparatus," U.S. patent 4,962,318 (9 October 1990). 3. S. Komoriya, T. Kawanabe, S. Nakagawa, T. Oosakaya, and N. Iriki, "Method of making semiconductor integrated circuit, pattern detecting method, and system for semiconductor alignment and reduced stepping exposure for use in same," U.S. patent 5,094,539 (10 March 1992). 4. T. Sone and N. George, "Hybrid diffractive-refractive lenses and achromats," Appl.Opt. 27, 2960-2971 (1988). 5. D. R. Shafer, "Lens usable in the ultraviolet," U.S. patent 4,770,477 (13 September 1988). 6. M. Born and E. Wolf,Principles of Optics (Pergamon, Bristol, 1974), pp. 64-93. 7. A. Offner, "Field lenses and secondary axial aberration," Appl. Opt. 8, 1735-1736 (1969). 8. D. Faklis and G. M. Morris, "Broadband imaging with holo- graphic lenses," Opt. Eng. 28, 592-598 (1989). 9. W.T.Welford,Aberrations of OpticalSystems (Hilger,Bristol, 1989), p. 207. 10. W. C. Sweatt, "Describing holographic optical elements as lenses," J. Opt.Soc.Am.67, 803-808 (1977). 1 December 1994 / Vol. 33, No. 34 / APPLIED OPTICS 7979