This document summarizes the skills and experience of Xuan (Cher) Zhang, a postdoctoral research scholar specializing in reliability and radiation effects on semiconductor devices. Zhang has extensive experience characterizing and modeling semiconductor devices using tools like an LCR meter, parameter analyzers, and TCAD simulation. She has investigated radiation effects on materials such as silicon carbide, germanium, graphene, and molybdenum disulfide. Zhang has published 9 papers on these topics and presented her work at several conferences.

1. Xuan (Cher) Zhang
TEL: 615-975-8864 xuan.zhang@vanderbilt.edu
Skills Summary
Familiar with LCR meter, Keithley® and HP parameter analyzer Agilent 4156, 4140, 1/f noise measurement
system, PNA RF Network analyzer, wire bonder for packaging devices, probe station and Raman spectroscopy.
 Wafer-level/device-level characterization
 Sentaurus TCAD device modeling
 Automated data acquisition by Python
coding
 Low frequency flicker-noise noise
characterization
 High frequency RF testing
 Bias-temperature instabilities
Highlights
 Extensive hands-on project experience involving semiconductor characterization (IV/CV) using Python
coding
 Experience on sentaurus TCAD simulation of semiconductor device
 Experience working with commercial semiconductor companies, ie. Cree Inc., TriQuint Inc.
 Strong background in semiconductor device physics and semiconductor technology
 Outstanding communication skill and strong organizational skills
Research Experience
Postdoctoral Research Scholar 2013/05 – 2015/08
Reliability and Radiation Effects Group, EECS Department, Nashville, TN
• Obtained significant insights into radiation effects and reliability issues on 2-D materials and devices
(graphene non-volatile memory, carbon-nanotube memory devices, IGZO and MoS2 transistors)
• Set up python-coded automatic measurement system with HP parameter analyzer Agilent 4156 and
E5810A gateway
• High frequency RF testing on GaN HEMTs using PNA RF Network analyzer with high-speed packages
• Experience with both wafer-level probing and device wire-bonding package tests
Research Assistant 2009/06 - 2013/05
Reliability and Radiation Effects Group, EECS Department, Nashville, TN
• Set up low frequency 1/f noise system and identified the dominant defects that responsible for
low-frequency noise and interface traps in 4H-SiC MOSFETs
• Demonstrated a model for the interface of SiC/SiO2 through both sentaurus TCAD simulation and 1/f
noise measurements
• Completed an extensive investigation of bias-temperature instabilities on 4H-SiC MOS devices
• Analyzed the effects of halo implant doses and the number of Si monolayers on the reliability of Ge
pMOSFETs
• Investigated junction leakage current in X-ray irradiated Ge pMOSFETs
Education
 Doctor of Philosophy in Electrical Engineering, Vanderbilt University, May 2013
Dissertation Title: Reliability and Irradiation Effects of 4H-SiC MOS Devices
 Master of Science in Electrical Engineering, Vanderbilt University, May 2011
Thesis Title: Total Ionizing Dose Radiation Effects on Germanium pMOS Devices
Awards
 Co-authored paper won “NSREC 2013 Outstanding Conference Paper Award” & “Outstanding
Student Paper Award”
 In recognition of outstanding performance as a graduate student performing research in NPSS

2. 2012 IEEE NPSS Graduate Scholarship Award & 2012 Paul Phelps Continuing Education Grant
Selected Publications
1. C. X. Zhang, E. X. Zhang, S. A. Francis, T. Roy, D. M. Fleetwood, R. D. Schrimpf, S. Dhar, S.-H. Ryu, X. Shen, S. T.
Pantelides, “Temperature dependence and post-irradiation annealing response of the 1/f noise of 4H-SiC MOSFETs,”
IEEE Trans. Electron Dev., vol. 60, no. 7, pp. 2361-2367, July 2013.
2. C. X. Zhang, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, S. Dhar, S.-H. Ryu, X. Shen, S. T. Pantelides, “Origin of
low-frequency noise and interface traps in 4H-SiC MOSFETs,” IEEE Electron Dev. Lett., vol. 34, no. 1, pp. 117-119, Jan.
2013.
3. C. X. Zhang, E. X. Zhang, D. M. Fleetwood, M. L. Alles, R. D. Schrimpf, E. B. Song, S. M. Kim, K. Galatsis, K. L. Wang,
“Electrical stress and total ionizing dose effects on Graphene-based non-volatile memory devices,” IEEE Trans. Nucl. Sci.,
vol. 59, no. 6, pp. 2974-2978, Aug. 2012.
4. C. X. Zhang, S. A. Francis, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, K. F. Galloway, E. Simoen, J. Mitard, and C.
Claeys, “Effects of ionizing radiation on defects and 1/f noise in Ge pMOSFETs,” IEEE Trans. Nucl. Sci., vol. 58, no. 3,
pp. 764-769, June 2011.
5. C. X. Zhang, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, S. Dhar, S. H. Ryu, X. Shen, and S. T. Pantelides, “Effects
of bias on the irradiation and annealing responses of 4H-SiC MOS devices,” IEEE Trans. Nucl. Sci., vol. 58, no. 6, pp.
2925-2929, Dec. 2011.
6. C. X. Zhang, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, K. F. Galloway, E. Simoen, J. Mitard, and C. Claeys,
“Effects of processing and radiation bias on leakage currents in Ge pMOSFETs,” IEEE Trans. Nucl. Sci., vol. 57, no. 6, pp.
3066-3070, Dec. 2010.
7. C. X. Zhang, A.K.M. Newaz, B. Wang, E. X. Zhang, G. X. Duan, D. M. Fleetwood, M. L. Alles, R. D. Schrimpf, K. I.
Bolotin, S. T. Pantelides, “Electrical stress and total ionizing dose effects on MoS2 transistors,” IEEE Trans. Nucl. Sci.,
vol. 61, no. 6, pp. 2862-2867, Dec. 2014.
8. C. X. Zhang, B. Wang, G. X. Duan, E. X. Zhang, D. M. Fleetwood, M. L. Alles, R. D. Schrimpf, K. Khestanova, G.
Auton, R. V. Gorbachev, S. J. Haigh, S. T. Pantelides, “Total ionizing dose effects on encapsulated graphene-hBN
devices,” IEEE Trans. Nucl. Sci., vol. 51, no. 6, pp. 2868-2873, Dec. 2014.
9. C. X. Zhang, E. X. Zhang, D. M. Fleetwood, M. L. Alles, R. D. Schrimpf, C. Rutherglen, K. Galatsis, “Total ionizing dose
effects and reliability of carbon nanotube FET devices,” Microelectronics Reliability, vol. 54, no. 11, Nov. 2014.
Presentations
1. Cher Xuan Zhang, et al., “Effects of processing and radiation bias on leakage currents in Ge pMOSFETs,” poster
presentation, IEEE NSREC, Denver, CO, July 2010.
2. Cher Xuan Zhang, et al., “Effects of ionizing radiation on defects and 1/f noise in Ge pMOSFETs,” oral presentation,
RADECS, Austria, 2010.
3. Cher Xuan Zhang, et al., “Effects of bias on the irradiation and annealing responses of 4H-SiC MOS devices,” oral
presentation, IEEE NSREC, Las Vegas, NV, July 2011.
4. Cher Xuan Zhang, et al., “Total ionizing dose effects on graphene-based non-volatile memory devices,” oral
presentation, IEEE NSREC, Miami, FL, July 2012.
5. Cher Xuan Zhang, et al., “Total ionizing dose effects and reliability on graphene-based non-volatile memory
(NVM),” oral presentation, IEEE Aerospace conference, Big sky, MT, Mar. 2013.