This document summarizes the Pspice modeling and simulation of a thyristor component. It examines the diode model parameters, the forward IG-VT characteristic, the reverse ITM-VTM characteristic, the holding current IH characteristic, and the switching times Ton and Toff. The simulations show good agreement with measurements, with most error values below 2%.

1. Device Modeling Report
COMPONENTS:THYRISTOR
PART NUMBER:BT145-800R
MANUFACTURER: PHILIPS SEMICONDUCTOR
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

2. DIODE MODEL
Pspice model
Model description
Parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

3. IG-VT Characteristic
Evaluation Circuit
Simulation result
Simulation
Comparison Table
Measurement Simulation % Error
IGT (mA) 5 4.9762 -0.47600
VGT (V) 0.6 0.590949 -1.50850
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

4. ITM-VTM Characteristic
Evaluation Circuit
Simulation result
Simulation
Comparison Table
At ITM=30A Measurement Simulation % Error
VTM(V) 1.1 1.1375 3.40909
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

5. Holding Characteristic (IH)
Evaluation Circuit
Simulation result
Simulation
Comparison Table
VD=12V Measurement Simulation % Error
IH(mA) 20 19.692 -1.54000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

6. Switching Time Characteristic
Evaluation Circuit
Simulation result
Simulation
Comparison Table
Measurement Simulation %Error
Ton(us) 2 1.9913 -0.43500
Toff(us) 70 70.745 1.06429
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004