The document provides a detailed device modeling report for a thyristor manufactured by NEC Bee Technologies Inc., outlining key parameters and performance characteristics. It includes simulation results for parameters such as saturation current, reverse breakdown voltage, and holding current, along with comparisons to measured values that indicate low percentage errors. The report emphasizes specific performance metrics and circuit simulation results, confirming the reliability of the model.

1. Device Modeling Report
COMPONENTS:THYRISTOR
PART NUMBER:03P4MG
MANUFACTURER: NEC
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

2. DIODE MODEL
Pspice model
Model description
Parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

3. IG-VT Characteristic
Evaluation Circuit
Simulation result
Simulation
Comparison Table
Measurement Simulation % Error
IGT (uA) 50(max) 48.691 2.6180
VGT (V) 0.8(max) 0.788856 1.3930
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

4. ITM-VTM Characteristic
Evaluation Circuit
Simulation result
Simulation
Comparison Table
At ITM=4A Measurement Simulation % Error
VTM(V) 2.2(max) 2.1172 3.7636
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

5. Holding Characteristic (IH)
Evaluation Circuit
Simulation result
Simulation
Comparison Table
VDM=24V,ITM=4A Measurement Simulation % Error
IH(mA) 5(max) 3.5042 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

6. Switching Time Characteristic
Evaluation Circuit
Simulation result
Simulation
Comparison Table
Measurement Simulation %Error
Toff(us) 60 59.980 0.0333
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005