The document discusses the history and electrical structure of PN junctions and PN junction diodes. It begins with defining a PN junction as the interface between P-type and N-type semiconductor materials. It then discusses Russell Ohl discovering the PN junction and photovoltaic effects in silicon in the 1940s while investigating silicon rectifiers. The document goes on to explain the energy band structure of semiconductors and how doping creates excess electrons or holes that determine the material as N-type or P-type. It concludes by summarizing the band diagram structure and carrier movement in PN junction diodes and solar cells.
2. A p–n junction is a boundary or interface between two
types of semiconductor material, p-type and n-type,
inside a single crystal of semiconductor.
Definition
3. Russell Ohl discovers the p-n
junction and photovoltaic
effects in silicon that lead to
the development of junction
transistors and solar cells.
In the mid-1930s Russell Ohl, an electrochemist at Bell Telephone Labs in Holmdel, NJ,
began investigating the use of silicon rectifiers as radar detectors. He found that
increasing the silicon purity helped improve their detection ability. On 23 February
1940, he tested a small silicon slab that yielded strange, surprising results. When
exposed to bright light, the current flowing through the slab jumped appreciably. He
also noticed that different parts of the crystal yielded opposite electrical effects when
tested with a "cat's whisker" style probe.
History
4. Energy Band of
Semiconductor
Conduction Band
Valance Band
2d Band
1st Band
Si 1S2 2S2 2P6 3S2 3P2
Core electrons
Valance
electrons
Energy Band
Electrical Structure
5. Fermi Level of
Semiconductor
"Fermi level" is the term used to describe the top of the collection of
electron energy levels at absolute zero temperature.
6. N-type Doping
Doping element has one
valance electron more than
Si.
The fifth electron is loosely
bound to Si, the binding
energy is about 0.045ev.
At slightly elevated
temperatures this extra
electron becomes
disassociated from its atom.
7. Donor Level
Donor level and fermi
energy level at 0 k
The distance between the
donor level and the
conduction band represents
the energy that is needed to
transfer the extra electrons
into the conduction band
EF
ED
8. Acceptor Electrons & Level
P-type doping with group
(lll) impurities.
The distance between the
donor level and the
conduction band represents
the energy that is needed to
transfer the extra electrons
into the conduction band
EF
ED
9. PN Junction Solar Cell
Metal Contacts
N-type buffer
P-type absorber
TCO
Substrate
Metal-semiconductor
TCO – n type buffer layer
n type buffer – p type
absorber layer
P type absorber – TCO
TCO
17. CdTe Band Profile
Ag
paste
3.7 ev
2.4 ev
ITO
CdS
CdTe
Graphite
Ag
1.45 ev
Cu, Graphite
CdTe
CdS
Glass
ITO 500nm
100nm
300nm
Back Contact
20nm 40nm
18. Electron Reflector
The use of electron reflector is a
strategy to improve the open-
circuit voltage of CdTe solar cells.
This layer reduces the carrier
recombination at the back contact.
The electrons will be reflected at
the CdTe/ZnTe interface and they
will collected with a higher
probability at the CdS/CdTe hetero-
junction.
"Fermi level" is the term used to describe the top of the collection of electron energy levels at absolute zero temperature.
Band gap, Egap, is the energy difference between the valence band and the conduction band
In order to illustrate the repelling force of an external negative charge, it is customary to curve the electron energy bands upward near the surface.